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2SA1262 PNP Power Transistor Specs

This document provides the product specification for the 2SA1262 silicon PNP power transistor from SavantIC Semiconductor. It includes descriptions of the TO-220 package and audio/general purpose applications. Tables list the transistor's maximum ratings and characteristics such as collector-emitter breakdown voltage, saturation voltage, current gain, and switching times. Dimension drawings show the TO-220 package outline.

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63 views4 pages

2SA1262 PNP Power Transistor Specs

This document provides the product specification for the 2SA1262 silicon PNP power transistor from SavantIC Semiconductor. It includes descriptions of the TO-220 package and audio/general purpose applications. Tables list the transistor's maximum ratings and characteristics such as collector-emitter breakdown voltage, saturation voltage, current gain, and switching times. Dimension drawings show the TO-220 package outline.

Uploaded by

el_george0079491
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1262

DESCRIPTION With TO-220 package Complement to type 2SC3179 APPLICATIONS Audio and general purpose
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol

Absolute maximum ratings(Ta=25 )


SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -6 -4 -1 30 150 -55~150 UNIT V V V A A W

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors


CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-25mA ,IB=0 IC=-2A; IB=-0.2A VCB=-60V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-4V IE=0.2A ; VCE=-12V IE=0 ; VCB=-10V ;f=1MHz 40 MIN -60

2SA1262

SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT Cob

TYP.

MAX

UNIT V

-0.6 -100 -100

V A A

15 90

MHz pF

Switching times ton ts tf Turn-on time Storage time Fall time IC=-2A ;IB1=- IB2=-0.2A RL=10A;VCC=-20V 0.25 0.75 0.25 s s s

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors


PACKAGE OUTLINE

2SA1262

Fig.2 Outline dimensions(unindicated tolerance:0.10 mm)

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1262

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