2N/SST5484 Series

Vishay Siliconix

N-Channel JFETs
2N5484 2N5485 2N5486
PRODUCT SUMMARY
Part Number
2N/SST5484 2N/SST5485 2N/SST5486

SST5484 SST5485 SST5486

VGS(off) (V)
0.3 to 3 0.5 to 4 2 to 6

V(BR)GSS Min (V)

25 25 25

gfs Min (mS)

3 3.5 4

IDSS Min (mA)

1 4 8

FEATURES
D Excellent High-Frequency Gain: Gps 13 dB (typ) @ 400 MHz 5485/6 D Very Low Noise: 2.5 dB (typ) @ 400 MHz 5485/6 D Very Low Distortion D High AC/DC Switch Off-Isolation

BENEFITS
D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification

APPLICATIONS
D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches

DESCRIPTION
The 2N/SST5484 series consists of n-channel JFETs designed to provide high-performance amplification, especially at high frequencies up to and beyond 400 MHz. The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), packages provide low-cost options and are available with tape-and-reel to support automated assembly (see Packaging Information).

TO-226AA (TO-92)
D 1 D 1

TO-236 (SOT-23 )

3 S 2 S 2

3 Top View 2N5484 2N5485 2N5486

Top View SST5484 (H4)* SST5485 (H5)* SST5486 (H6)* *Marking Code for TO-236

For applications information see AN102 and AN105. Document Number: 70246 S-04028Rev. E, 04-Jun-01 www.vishay.com

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2N/SST5484 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C

SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED)

Limits
2N5484 2N5485 2N5486

Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc

Symbol

Test Conditions

Typa

Min

Max

Min

Max

Min Max Unit

V(BR)GSS VGS(off) IDSS IGSS IG VGS(F)

IG = 1 mA , VDS = 0 V VDS = 15 V, ID = 10 nA VDS = 15 V, VGS = 0 V VGS = 20 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA IG = 10 mA , VDS = 0 V

35

25 0.3 1 3 5 1 200

25 0.5 4 4 10 1 200

25 V 2 8 6 20 1 200 nA pA V mA

0.002 0.2 20 0.8

Gate-Source Forward Voltagec

Dynamic
Common-Source Forward Transconductanceb Common-Source Output Conductanceb Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltagec gfs gos Ciss Crss Coss en VDS = 15 V, VGS = 0 V f = 100 Hz VDS = 15 V, VGS = 0 V f = 1 MHz 3 VDS = 15 V, VGS = 0 V f = 1 kHz 6 50 2.2 0.7 1 10 5 1 2 3.5 7 60 5 1 2 4 8 75 5 1 2 nV Hz pF mS mS

High-Frequency
Common-Source Transconductance Common-Source Output Conductance Common-Source Input Conductance f = 100 MHz Yfs(RE) Yos(RE) Yis(RE) VDS = 15 V VGS = 0 V f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz VDS = 15 V, ID = 1 mA f = 100 MHz Common-Source Power Gain Gps VDS = 15 V ID = 4 mA f = 100 MHz f = 400 MHz 5.5 5.5 45 65 0.05 0.8 20 21 13 0.3 2 1 2.5 2.5 3 2 4 2 4 16 25 18 10 30 20 2.5 18 10 30 20 2.5 dB 0.1 1 1 mS 75 100 100 2.5 3 3.5 mS mS

VDS = 15 V, VGS = 0 V RG = 1 MW , f = 1 kHz Noise Figure NF VDS = 15 V, ID = 1 mA RG = 1 kW , f = 100 MHz VDS = 15 V ID = 4 mA RG = 1 kW www.vishay.com f = 100 MHz f = 400 MHz

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Document Number: 70246 S-04028Rev. E, 04-Jun-01

2N/SST5484 Series
Vishay Siliconix
SPECIFICATIONS FOR SST SERIES (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
SST5484 SST5485 SST5486

Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Gate-Source Forward Voltagec

Symbol

Test Conditions

Typb

Min

Max

Min

Max

Min

Max

Unit

V(BR)GSS VGS(off) IDSS IGSS IG VGS(F)

IG = 1 mA , VDS = 0 V VDS = 15 V, ID = 10 nA VDS = 15 V, VGS = 0 V VGS = 20 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA IG = 10 mA , VDS = 0 V

35

25 0.3 1 3 5 1 200

25 0.5 4 10 1 200

25 V 2 8 6 20 1 200 nA pA V mA

0.002 0.2 20 0.8

Dynamic
Common-Source Forward Transconductanceb Common-Source Output Conductanceb Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltagec gfs gos Ciss Crss Coss en VDS = 15 V, VGS = 0 V f = 100 Hz VDS = 15 V, VGS = 0 V f = 1 MHz 3 VDS = 15 V, VGS = 0 V f = 1 kHz 6 50 2.2 3.5 7 60 4 8 75 mS mS

0.7

pF

1 10 nV Hz

High-Frequency
Common-Source Transconductance Common-Source Output Conductance Common-Source Input Conductance f = 100 MHz Yfs Yos Yis VDS = 15 V VGS = 0 V f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz VDS = 15 V, ID = 1 mA f = 100 MHz Gps VDS = 15 V ID = 4 mA f = 100 MHz f = 400 MHz 5.5 5.5 45 65 0.05 0.8 20 21 13 0.3 2 1 2.5 NH dB mS mS mS

Common-Source Power Gain

VDS = 15 V, VGS = 0 V RG = 1 MW , f = 1 kHz Noise Figure NF VDS = 15 V, ID = 1 mA RG = 1 kW , f = 100 MHz VDS = 15 V ID = 4 mA RG = 1 kW f = 100 MHz f = 400 MHz

Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC.

Document Number: 70246 S-04028Rev. E, 04-Jun-01

www.vishay.com

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2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
20 IDSS Saturation Drain Current (mA) 10 rDS(on) Drain-Source On-Resistance ( ) gfs Forward Transconductance (mS) 500

On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage

100

rDS @ ID = 1 mA, VGS = 0 V

400 gos @ VDS = 10 V, VGS = 0 V f = 1 kHz gos Output Conductance (S) 80

16

IDSS

12

gfs

300

rDS gos

60

200

40

IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz

100

20

0 0 2 4 6 8 VGS(off) Gate-Source Cutoff Voltage (V) 10

0 0 2 4 6 8 VGS(off) Gate-Source Cutoff Voltage (V) 10

Gate Leakage Current

100 nA 10 ID = 5 mA 1 mA 0.1 mA IG Gate Leakage 1 nA TA = 125_C gfs Forward Transconductance (mS) 8

Common-Source Forward Transconductance vs. Drain Current

VGS(off) = 3 V VDS = 10 V f = 1 kHz

10 nA

6 25_C 4

TA = 55_C

100 pA

ID = 5 mA 1 mA TA = 25_C 0.1 mA

IGSS @ 125_C

10 pA

125_C 2

1 pA

IGSS @ 25_C

0.1 pA 0 4 8 12 16 VDG Drain-Gate Voltage (V) 20

0 0.1 1 ID Drain Current (mA) 10

Output Characteristics
10 VGS(off) = 2 V 8 ID Drain Current (mA) ID Drain Current (mA) VGS = 0 V 6 0.2 V 0.4 V 4 0.6 V 0.8 V 2 1.0 V 1.2 V 1.4 V 8 12 15

Output Characteristics
VGS(off) = 3 V

VGS = 0 V 9 0.3 V 0.6 V 6 0.9 V 1.2 V 1.5 V 3 1.8 V

10

10

VDS Drain-Source Voltage (V)

VDS Drain-Source Voltage (V) Document Number: 70246 S-04028Rev. E, 04-Jun-01

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2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
10 VGS(off) = 2 V 8 ID Drain Current (mA) ID Drain Current (mA) TA = 55_C 6 25_C VDS = 10 V 8 10 VGS(off) = 3 V TA = 55_C 25_C 6 125_C VDS = 10 V

Transfer Characteristics

125_C

0 0 0.4 0.8 1.2 1.6 VGS Gate-Source Voltage (V) 2

0 0 0.6 1.2 1.8 2.4 VGS Gate-Source Voltage (V) 3

Transconductance vs. Gate-Source Voltage

10 VGS(off) = 2 V gfs Forward Transconductance (mS) 8 TA = 55_C 6 25_C VDS = 10 V f = 1 kHz gfs Forward Transconductance (mS) 8 10

Transconductance vs. Gate-Source Voltage

VGS(off) = 3 V VDS = 10 V f = 1 kHz

TA = 55_C 6 25_C

125_C

125_C

0 0 0.4 0.8 1.2 1.6 2 VGS Gate-Source Voltage (V)

0 0 0.6 1.2 1.8 2.4 3 VGS Gate-Source Voltage (V)

On-Resistance vs. Drain Current

300 rDS(on) Drain-Source On-Resistance ( ) TA = 25_C 240 AV Voltage Gain VGS(off) = 2 V 180 3 V 120 80 100

Circuit Voltage Gain vs. Drain Current

g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 60 10 V ID

40

VGS(off) = 2 V

60

20 3 V

0 0.1

0 1 ID Drain Current (mA) 10 0.1 1 ID Drain Current (mA) 10

Document Number: 70246 S-04028Rev. E, 04-Jun-01

www.vishay.com

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2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance vs. Gate-Source Voltage
5 Crss Reverse Feedback Capacitance (pF) f = 1 MHz Ciss Input Capacitance (pF) 4 3 f = 1 MHz 2.4

Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage

VDS = 0 V

1.8

VDS = 0 V

2 10 V 1

1.2

10 V 0.6

0 0 4 8 12 16 VGS Gate-Source Voltage (V) 20

0 0 4 8 12 16 VGS Gate-Source Voltage (V) 20

Input Admittance
100 TA = 25_C VDS = 15 V VGS = 0 V Common Source 100

Forward Admittance
TA = 25_C VDS = 15 V VGS = 0 V Common Source

bis 10 gis

10 (mS) (mS)

gfs bfs 1

0.1 100

200

500

1000

0.1 100

200

500

1000

f Frequency (MHz)

f Frequency (MHz)

Reverse Admittance
10 TA = 25_C VDS = 15 V VGS = 0 V Common Source 10

Output Admittance
TA = 25_C VDS = 15 V VGS = 0 V Common Source

brs

bos

1 (mS) (mS)

grs 0.1 0.1 gos

0.01 100 200 500 f Frequency (MHz) 1000

0.01 100 200 500 f Frequency (MHz) 1000

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Document Number: 70246 S-04028Rev. E, 04-Jun-01

2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
20

Equivalent Input Noise Voltage vs. Frequency

VGS(off) = 3 V VDS = 10 V

20

Output Conductance vs. Drain Current

VGS(off) = 3 V VDS = 10 V f = 1 kHz

Hz

gos Output Conductance (S)

16

16 TA = 55_C 12

en Noise Voltage nV /

12

8 125_C 4

25_C

4 ID = IDSS 0 10 100 1k

ID = 5 mA

0 10 k 100 k 0.1 1 ID Drain Current (mA) 10

f Frequency (Hz)

Document Number: 70246 S-04028Rev. E, 04-Jun-01

www.vishay.com

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