4/1/2008

EE105Fall2007 1
Lecture17
OUTLINE
NMOSFETinONstate(contd)
Bodyeffect
Channellengthmodulation
Velocitysaturation
EE105Spring2008 Lecture17,Slide1 Prof.Wu,UCBerkeley
y
NMOSFETinOFFstate
MOSFETmodels
PMOSFET
Reading:FinishChap.6
BodyEffectExample
EE105Spring2008 Lecture17,Slide2 Prof.Wu,UCBerkeley
( ) 0
2 2
2
where
TH TH B SB B
A Si
ox
V V V
qN
C

= + +
=
18 3
Example:
Typical values
~0.5
0.48V for 10 cm
(substratedoping)
A substratebias of 1V
producea shift of 0.2V
B A
SB
TH
N
V
V

= =
=
ChannelLengthModulation
ThepinchoffpointmovestowardthesourceasV
DS
increases.
ThelengthoftheinversionlayerchannelbecomesshorterwithincreasingV
DS
.
I
D
increases(slightly)withincreasingV
DS
inthesaturationregionofoperation.
1 1 L
EE105Spring2008 Lecture17,Slide3 Prof.Wu,UCBerkeley
( )
( ) ( )
( ) [ ]
2
, ,
2
,
1 1
1
1
1
2
: channel length modulation coefficient
1
* Note: in Razavi: 1
2
Dsat
DS DSsat
D sat n ox GS TH DS D sat
D sat n ox GS TH DS
L
I
L L L L
L V V
W
I C V V V V
L
W
I C V V V
L

+



= +

= +
andL
Theeffectofchannellengthmodulationislessforalong
channelMOSFETthanforashortchannelMOSFET.
1
short channel MOSFET has larger
L

EE105Spring2008 Lecture17,Slide4 Prof.Wu,UCBerkeley
4/1/2008
EE105Fall2007 2
VelocitySaturation
InstateoftheartMOSFETs,thechannelisveryshort(<0.1m);
hencethelateralelectricfieldisveryhighandcarrierdrift
velocitiescanreachtheirsaturationlevels.
TheelectricfieldmagnitudeatwhichthecarriervelocitysaturatesisE
sat
.
v
6
8 10 cm/s for electrons in Si
v

=

Saturation
EE105Spring2008 Lecture17,Slide5 Prof.Wu,UCBerkeley
v
E
6
2
2
,
,
6 10 cm/s for holes in Si
NMOS: 250 cm/V-s 30,000 V/cm
PMOS: 80 cm/V-s 80,000 V/cm
For 0.1 m
0.3V for NMOS
0.8 V for PM
sat
n sat
n sat
D sat
D sat
v
E
E
L
V
V

=
=
= OS

Drift velocity:
Slope=
v E

=
Saturation
Velocity:
sat
v
ImpactofVelocitySaturation
Recallthat
IfV
DS
>E
sat
L,thecarriervelocitywillsaturateandhencethe
draincurrentwillsaturate:
) ( ) ( y v y WQ I
inv D
=
( )v V V WC v WQ I = =
EE105Spring2008 Lecture17,Slide6 Prof.Wu,UCBerkeley
I
D,sat
isproportionalto V
GS
V
TH
ratherthan (V
GS
V
TH
)
2
I
D,sat
isnotdependentonL
I
D,sat
isdependentonW
( )
sat TH GS ox sat inv sat D
v V V WC v WQ I = =
,
ShortChannelMOSFETI
D
V
DS
EE105Spring2008 Lecture17,Slide7 Prof.Wu,UCBerkeley
I
D,sat
isproportionaltoV
GS
V
TH
ratherthan(V
GS
V
TH
)
2
V
D,sat
issmallerthanV
GS
V
TH
Channellengthmodulationisapparent(?)
P. Bai et al. (Intel Corp.),
Intl Electron Devices Meeting, 2004.
InashortchannelMOSFET,thesource&drainregionseachsupport
asignificantfractionofthetotalchanneldepletionchargeQ
dep
WL
V
TH
islowerthanforalongchannelMOSFET
DrainInducedBarrierLowering(DIBL)
Source
Injection
Barrier
DIBL
Short-
Channel
Long-
Channel
EE105Spring2008 Lecture17,Slide8 Prof.Wu,UCBerkeley
Asthedrainvoltageincreases,thereversebiasonthebodydrainPN
junctionincreases,andhencethedraindepletionregionwidens.
V
TH
decreaseswithincreasingdrainbias.
(Thebarriertocarrierdiffusionfromthesourceintothechannelisreduced.)
I
D
increaseswithincreasingdrainbias.
Source
Drain Drain
-qV
DS
4/1/2008
EE105Fall2007 3
NMOSFETinOFFState
Wehadpreviouslyassumedthatthereisnochannelcurrent
whenV
GS
<V
TH
.Thisisincorrect!
AsV
GS
isreducedbelowV
TH
(towards0V),thepotentialbarrierto
carrierdiffusionfromthesourceintothechannelisincreased.
I
D
becomeslimitedbycarrierdiffusionintothechannel,rather
than by carrier drift through the channel
EE105Spring2008 Lecture17,Slide9 Prof.Wu,UCBerkeley
thanbycarrierdriftthroughthechannel.
(ThisissimilartothecaseofaPNjunctiondiode!)
I
D
variesexponentiallywiththepotentialbarrierheightatthe
source,whichvariesdirectlywiththechannelpotential.
SubThresholdLeakageCurrent
Recallthat,inthedepletion(subthreshold)regionofoperation,
thechannelpotentialiscapacitivelycoupledtothegatepotential.
Achangeingatevoltage(V
GS
)resultsinachangeinchannel
voltage(V
CS
):
/ ; 1 1
dep ox
CS GS GS
d
C C
V V V m m
C C C

= = + >

+

EE105Spring2008 Lecture17,Slide10 Prof.Wu,UCBerkeley
Therefore,thesubthresholdcurrent(I
D,subth
)decreases
exponentiallywithlinearlydecreasingV
GS
/m
ox dep ox
C C C +

log (I
D
)
V
GS
I
D
V
GS
1
10
(log )
Sub-t
ln(10) 60mV/de
hres
c
hold swing:
DS
GS
T
d I
S
dV
S mV

= >
V
TH
V
TH
ShortChannelMOSFETI
D
V
GS
EE105Spring2008 Lecture17,Slide11 Prof.Wu,UCBerkeley
P. Bai et al. (Intel Corp.),
Intl Electron Devices Meeting, 2004.
V
TH
DesignTradeOff
LowV
TH
isdesirableforhighONstatecurrent:
I
D,sat
(V
DD
V
TH
)

1< <2
ButhighV
TH
isneededforlowOFFstatecurrent:
EE105Spring2008 Lecture17,Slide12 Prof.Wu,UCBerkeley
V
TH
cannot be
reduced aggressively.
Low V
TH
High V
TH
I
OFF,highVTH
I
OFF,lowVTH
V
GS
log I
D
0
4/1/2008
EE105Fall2007 4
MOSFETLargeSignalModels(V
GS
>V
TH
)
DependingonthevalueofV
DS
,theMOSFETcanberepresented
withdifferentlargesignalmodels.
V
DS
<< 2(V
GS
-V
TH
) V
DS
< V
D,sat
V
DS
> V
D,sat
Triode Region Saturation Region
EE105Spring2008 Lecture17,Slide13 Prof.Wu,UCBerkeley
( ) ( ) [ ]
( ) [ ]
sat D DS TH GS ox sat sat D
sat D DS TH GS ox n sat D
V V V V WC v I
or
V V V V
L
W
C I
, ,
,
2
,
1 ) (
1
2
1
+ =
+ =

) (
1
TH GS ox n
ON
V V
L
W
C
R

DS
DS
TH GS ox n tri D
V
V
V V
L
W
C I

=
2
) (
,

MOSFETTransconductance,g
m
Transconductance(g
m
)isameasureofhowmuchthedrain
currentchangeswhenthegatevoltagechanges.
For amplifier applications, the MOSFET is usually operating in
GS
D
m
V
I
g

EE105Spring2008 Lecture17,Slide14 Prof.Wu,UCBerkeley

( ) { } ,
1
D
m sat ox DS D sat
GS TH
I
g v WC V V
V V
= + =

MOSFETSmallSignalModel
(SaturationRegionofOperation)
TheeffectofchannellengthmodulationorDIBL(whichcause
I
D
toincreaselinearlywithV
DS
)ismodeledbythetransistor
outputresistance,r
o
.
EE105Spring2008 Lecture17,Slide15 Prof.Wu,UCBerkeley
D D
DS
o
I I
V
r

DerivationofSmallSignalModel
(LongChannelMOSFET,SaturationRegion)
( ) ( )
2
,
1
1
2
1
D n ox GS TH DS D sat
D D D
d gs bs ds m gs mb bs ds
GS BS DS o
W
I C V V V V
L
I I I
i v v v g v g v v
V V V r
= +


= + + + +

EE105Spring2008 Lecture17,Slide16 Prof.Wu,UCBerkeley
gs
v
m gs
g v
mb bs
g v
d
i
4/1/2008
EE105Fall2007 5
PMOSTransistor
ApchannelMOSFETbehavessimilarlytoannchannel
MOSFET,exceptthepolaritiesforI
D
andV
GS
arereversed.
Circuit symbol Schematic cross-section
EE105Spring2008 Lecture17,Slide17 Prof.Wu,UCBerkeley
ThesmallsignalmodelforaPMOSFETisthesameasthatfor
anNMOSFET.
Thevaluesofg
m
andr
o
willbedifferentforaPMOSFETvs. anNMOSFET,
sincemobility&saturationvelocityaredifferentforholesvs.electrons.
PMOSIV Equations
( )
( )
( ) ( )
2
,
2
2
, ,
1
2
2
1
2
2
Long Channel:
1
1
2
D tri p ox SG TH DS DS DS SD GS SG
p ox GS TH DS DS
D sat p ox SG TH SD SD sat
W
I C V V V V
L
W
C V V V V
L
W
I C V V V V
L

=

=

= +

EE105Spring2008 Lecture17,Slide18 Prof.Wu,UCBerkeley
( ) ( )
2
,
,
2
1
1
2
Short Channel:
p ox GS TH DS D sat
D sat sat
L
W
C V V V V
L
I v W


= +

= ( )
( )
,
,
,
( ) 1
( ) 1
Note: 0, 0, 0, 0 in PMOS
ox SG TH SD SD sat
sat ox SG TH DS D sat
GS DS D sat TH
C V V V V
v WC V V V V
V V V V

+


= +

< < < <
CMOSTechnology
Itpossibletoformdeepntyperegions(well)withinaptype
substratetoallowPMOSFETsandNMOSFETstobecofabricated
onasinglesubstrate.
ThisisreferredtoasCMOS(ComplementaryMOS)technology.
Schematic cross-section of CMOS devices
EE105Spring2008 Lecture17,Slide19 Prof.Wu,UCBerkeley
ComparisonofBJTandMOSFET
TheBJTcanachievemuchhigherg
m
thanaMOSFET,fora
givenbiascurrent,duetoitsexponentialIV characteristic.
Linear
(Long-Channel) (Short-Channel)
MOSFET
EE105Spring2008 Lecture17,Slide20 Prof.Wu,UCBerkeley
;
GS Dsat Dsat sat
GS Dsat
V V V E L
V V
> =
<