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Silicon Pin Diode: Package Style 01

The 1N5719 is a silicon PIN diode designed for general purpose attenuator and switching applications from 100 MHz to 3 GHz. It has a maximum reverse voltage of 150V and can dissipate up to 250mW of power at 25°C. The diode has a typical reverse breakdown voltage of 150V, capacitance of 0.3pF, and reverse recovery time of 1.25μs.

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Sandrine Gallard
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24 views2 pages

Silicon Pin Diode: Package Style 01

The 1N5719 is a silicon PIN diode designed for general purpose attenuator and switching applications from 100 MHz to 3 GHz. It has a maximum reverse voltage of 150V and can dissipate up to 250mW of power at 25°C. The diode has a typical reverse breakdown voltage of 150V, capacitance of 0.3pF, and reverse recovery time of 1.25μs.

Uploaded by

Sandrine Gallard
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

1N5719

SILICON PIN DIODE

PACKAGE STYLE 01

DESCRIPTION:
The1N5719 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz.

MAXIMUM RATINGS
IF VR PDISS TJ TSTG JC
O O

100 mA 150 V 250 mW @ TA = 25 C -65 C to +200 C -65 C to +200 C 0.7 C/mW


O O O O

NONE

CHARACTERISTICS
SYMBOL
VBR CT RS trr IR = 10 A VR = 100 V

TC = 25 C

TEST CONDITIONS
f = 1.0 MHz f = 100 MHz IR = 250 mA f = 20 mA

MINIMUM
150

TYPICAL

MAXIMUM
0.3 1.25

UNITS
V pF S S

IF = 100 mA IF = 50 mA VR = 10 V

100 100

A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
Specifications are subject to change without notice.

REV. A

1/1

This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.

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