2SK3868
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (p -MOSVI)
2SK3868
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: R DS (ON) = 1.3 (typ.)
High forward transfer admittance: |Yfs| = 3S (typ.)
Low leakage current: IDSS = 100 A (V DS = 500 V)
Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V DSS
500
Drain-gate voltage (RGS = 20 k)
V DGR
500
Gate-source voltage
V GSS
30
ID
IDP
20
Drain power dissipation (Tc = 25C)
PD
35
Single pulse avalanche energy
(Note 2)
EA S
180
mJ
Avalanche current
IAR
Repetitive avalanche energy (Note 3)
EAR
3.5
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
-55~150
DC
Drain current
(Note 1)
Pulse (t = 1 ms)
(Note 1)
A
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
3.57
C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
C/W
Note 1: Please use devices on conditions that the channel temperature is below 150C.
Note 2: VDD = 90 V, Tch = 25C(initial), L = 12.2 mH, IAR = 5 A, R G = 25
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
2004-07-01
2SK3868
Electrical Characteristics (Ta = 25C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
V GS = 25 V, V DS = 0 V
10
V (BR) GSS
IG = 10 A, V DS = 0 V
30
IDSS
V DS = 500 V, V GS = 0 V
100
V (BR) DSS
ID = 10 mA, V GS = 0 V
500
V th
V DS = 10 V, ID = 1 mA
2.0
4.0
Drain-source ON resistance
RDS (ON)
V GS = 10 V, ID = 2.5 A
1.3
1.7
Forward transfer admittance
Yf s
V DS = 10 V, ID = 2.5 A
1.5
3.0
Input capacitance
Ciss
550
Reverse transfer capacitance
Crss
Output capacitance
Coss
70
ID = 2.5 A V OUT
10
RL =
90
20
10
50
16
10
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdow n voltage
Gate threshold voltage
Rise time
V DS = 25 V, V GS = 0 V, f = 1 MHz
tr
10 V
V GS
0V
Turn-on time
ton
Fall time
tf
15
Switching time
Turn-off time
V DD
225 V
Duty <
1%,
t
=
10
s
=
w
toff
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
V DD
400 V, V GS = 10 V, ID = 5 A
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDR
IDRP
20
V DSF
IDR = 5 A, V GS = 0 V
1.7
Reverse recovery time
trr
IDR = 5 A, V GS = 0 V,
150
ns
Reverse recovery charge
Qrr
dIDR /dt = 100 A/s
0.3
Forward voltage (diode)
Marking
K3868
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2004-07-01
2SK3868
ID V DS
ID V DS
10
10
COMMON SOURCE
Tc = 25C
PULSE TEST
5.25
4.75
4.5
10
COMMON SOURCE
Tc = 25C
PULSE TEST
5.5
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
6
5.5
4
5.25
4.75
4.5
VGS = 4 V
VGS = 4 V
0
0
10
DRAIN-SOURCE VOLTAGE VDS
0
0
12
(V)
ID V GS
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
VDS = 20 V
25
6
Tc = 55C
4
100
0
0
GATE-SOURCE VOLTAGE VGS
10
Tc = 25
PULSE TEST
16
12
ID = 5 A
2.5
1.2
0
0
12
16
GATE-SOURCE VOLTAGE VGS
20
(V)
RDS (ON) ID
10
COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE
RDS (ON) (m)
FORWARD TRANSFER ADMITTANCE
Yfs (S)
(V)
COMMON SOURCE
Yf s ID
VDS = 20 V
PULSE TEST
Tc = 55C
0.1
0.1
24
20
(V)
10
20
V DS V GS
COMMON SOURCE
PULSE TEST
16
DRAIN-SOURCE VOLTAGE VDS
10
12
100
25
10
COMMON SOURCE
Tc = 25C
PULSE TEST
VGS = 10 V 15V
1
0.1
0.01
0.1
10
DRAIN CURRENT DI (A)
DRAIN CURRENT DI (A)
2004-07-01
2SK3868
RDS (ON) Tc
IDR V DS
10
COMMON SOURCE
DRAIN REVERSE CURRENT ID R
(A)
DRAIN-SOURCE ON RESISTANCE
RDS (ON) (m )
5
VGS = 10 V
PULSE TEST
ID = 5A
2.5
2
1.2
1
0
0
40
80
120
COMMON SOURCE
Tc = 25C
PULSE TEST
3
0.5
10
0.3
3
VGS = 0, 1,1 V
0.1
0
160
CASE TEMPERATURE Tc (C)
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE V DS
V th Tc
10000
Ciss
100
Coss
10 COMMON SOURCE
VGS = 0 V
Crss
f = 1 MHz
Tc = 25C
1
0.1
10
30 50
PULSE TEST
3
40
40
80
120
DRAIN-SOURCE VOLTAGE VDS (V)
CASE TEMPERATURE Tc (C)
PD Tc
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN POWER DISSIPATION
PD (W)
ID = 1 mA
0
80
100
50
40
30
20
10
0
0
VDS = 10 V
4
40
80
120
160
200
500
16
VDD = 100 V
300
400
12
200
200
8
COMMON SOURCE
VGS
100
ID = 5 A
Tc = 25C
PULSE TEST
0
0
CASE TEMPERATURE Tc (C)
20
VDS
400
160
10
15
20
GATE-SOURCE VOLTAGE VGS (V)
1000
GATE THRESHOLD VOLTAGE
Vth (V)
CAPACITANCE C (pF)
COMMON SOURCE
0
25
TOTAL GATE CHARGE Qg (nC)
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2SK3868
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
r th tw
10
Duty=0.5
0.2
0.1
0.1
0.05
0.02
PDM
t
SINGLE PULSE
0.01
0.01
Duty = t/T
Rth (ch-c) = 3.57C/W
0.001
10
100
10
100
10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
EA S Tch
100
200
AVALANCHE ENERGY
EAS (mJ)
DRAIN CURRENT ID (A)
ID max ( PULSED) *
100 s *
10
ID max ( CONTINUOUS) *
1 ms *
DC OPERATION
Tc = 25C
160
120
80
40
SINGLE NONREPETITIVE
0.1
PULSE
0
25
Tc=25
50
75
100
125
150
CURVES MUST BE DERATED
CHANNEL TEMPERATURE (INITIAL)
Tch (C)
LINEARLY WITH INCREASE IN
0.01
1
VDSS max
TEMPERATURE.
10
100
1000
DRAIN-SOURCE VOLTAGE VDS (V)
BVDSS
15 V
IAR
15 V
V DD
TEST CIRCUIT
RG = 25
V DD = 90 V, L = 12.2mH
V DS
WAVE FORM
? AS =
1
2
BVDSS
L I2
B
VDSS VDD
2004-07-01
2SK3868
RESTRICTIONS ON PRODUCT USE
030619EAA
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, indus trial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
2004-07-01
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