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2SC3858 Silicon NPN Power Transistor Specs

This document provides specifications for the 2SC3858 silicon NPN power transistor. It includes maximum ratings, characteristics, package outline, and pinning information. The 2SC3858 has an MT-200 package, is complement to the 2SA1494 transistor, and is intended for audio and general purpose applications with a current gain of 50-180 and breakdown voltage over 200V.

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53 views4 pages

2SC3858 Silicon NPN Power Transistor Specs

This document provides specifications for the 2SC3858 silicon NPN power transistor. It includes maximum ratings, characteristics, package outline, and pinning information. The 2SC3858 has an MT-200 package, is complement to the 2SA1494 transistor, and is intended for audio and general purpose applications with a current gain of 50-180 and breakdown voltage over 200V.

Uploaded by

Rene
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

www.jmnic.

com

Product Specification

2SC3858

Silicon NPN Power Transistors

DESCRIPTION
With MT-200 package
Complement to type 2SA1494
APPLICATIONS
Audio and general purpose
PINNING(see Fig.2)
PIN

DESCRIPTION

Base

Collector;connected to
mounting base

Emitter

Fig.1 simplified outline (MT-200) and symbol

Absolute maximum ratings (Ta=25C)


SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

200

VCEO

Collector-emitter voltage

Open base

200

VEBO

Emitter-base voltage

Open collector

IC

Collector current

17

IB

Base current

PC

Collector power dissipation

200

Tj

Junction temperature

150

Tstg

Storage temperature

-55~150

TC=25

Product Specification

www.jmnic.com

2SC3858

Silicon NPN Power Transistors


CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

V(BR)CEO

Collector-emitter breakdown voltage

IC=50mA; IB=0

VCEsat

Collector-emitter saturation voltage

IC=10 A;IB=1 A

2.5

ICBO

Collector cut-off current

VCB=200V; IE=0

100

IEBO

Emitter cut-off current

VEB=6V; IC=0

100

hFE

DC current gain

IC=8A ; VCE=4V

fT

Transition frequency

IC=1A ; VCE=12V

20

MHz

COB

Output capacitance

IE=0; VCB=10V;f=1MHz

300

pF

0.50

1.80

0.60

200

UNIT
V

50

180

Switching times
ton

Turn-on time

ts

Storage time

tf

Fall time

IC=10A;RL=4
IB1=- IB2=1A
VCC=40V

hFE classifications
Y

50-100

70-140

90-180

Product Specification

www.jmnic.com

2SC3858

Silicon NPN Power Transistors


PACKAGE OUTLINE

Fig.2 Outline dimensions

Product Specification

www.jmnic.com

2SC3858

Silicon NPN Power Transistors

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