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Nte 31

This document provides specifications for the NTE31 and NTE32 silicon complementary transistors. These transistors are designed for high voltage and current applications such as vertical deflection output and sound output in line-operated TVs. The document lists maximum ratings and electrical characteristics including breakdown voltage, current gain, saturation voltage, and transition frequency.

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120 views2 pages

Nte 31

This document provides specifications for the NTE31 and NTE32 silicon complementary transistors. These transistors are designed for high voltage and current applications such as vertical deflection output and sound output in line-operated TVs. The document lists maximum ratings and electrical characteristics including breakdown voltage, current gain, saturation voltage, and transition frequency.

Uploaded by

Perez Compra
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

NTE31 (NPN) & NTE32 (PNP)

Silicon Complementary Transistors


TV Sound Output, TV Vertical Output,
AF Driver Output
Features:
D High Voltage: VCEO = 160V
D High Continuous Collector Current Capability

Applications:
D Vertical Deflection Output & Sound Output Applications for Line Operated TV

Absolute Maximum Ratings: (TA = +25C unless otherwise specified)


CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Min Typ Max Unit
CollectorEmitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0 160 V
Collector Cutoff Current ICBO VCB = 150V, IE = 0 1.0 A
Emitter Cutoff Current IEBO VEB = 6V, IC = 0 1.0 A
DC Current Gain hFE VCE = 5V, IC = 200mA 100 200
CollectorEmitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA 1.5 V
BaseEmitter Voltage VBE VCE = 5V, IC = 5mA 0.45 0.75 V
Transition Frequency
NTE31 fT VCE = 5V, IC = 200mA 20 100 MHz
NTE32 15 50 MHz
Collector Output Capacitance
NTE31 Cob VCB = 10V, IE = 0, f = 1MHz 20 pF
NTE32 35 pF
.339
(8.62)
Max
Seating Plane

.026 (.66)
.512 Dia Max
(13.0)
Min

E C B

.100 (2.54)

.200
(5.08)
Max

.240 (6.09) Max

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