LIGHT SOURCES

Light emitters are a key element in any fiber optic system. This component

converts the electrical signal into a corresponding light signal that can be injected into the

fiber. The light emitter is an important element because it is often the most costly element

in the system, and its characteristics often strongly influence the final performance limits

of a given link. There are two devices commonly used to generate light for optical fiber

communications systems: light-emitting diodes (LEDs) and laser diodes (LDs).

LEDs and LDs are complex semiconductors that convert an electrical current into

light. The conversion process is fairly efficient in that it generates little heat compared to

incandescent lights. LEDs and LDs are of interest for fiber optics because of five inherent

characteristics:

1. They are small.

2. They possess high radiance (i.e., They emit lots of light in a small area).

3. The emitting area is small, comparable to the dimensions of optical fibers.

4. They have a very long life, offering high reliability.

5. They can be modulated (turned off and on) at high speeds.

Light-Emitting Diodes (LEDs)

LEDs are p-n junction diode, usually made from a semiconductor material such as

aluminum-gallium-arsenide (AlGaAs) or gallium-arsenide-phosphide (GaAsP). LEDs

emit light by spontaneous emission; light is emitted as a result of recombination of

electrons and holes. Once across the junction, these minority carriers recombine with
majority carriers and give up energy in the form of light. The process is the same as

conventional semiconductor diode except that in LEDs certain semiconductor materials

and dopants are chosen such that the process is radiative; that is, a photon is produced.

Photons are particles that travel at the speed of light but at rest have no mass.

There are several types of LED structures, the homojunction LEDs, the

heterojunction LEDs, the Burros etched-well surface-emitting LED, and the edge-

emitting LED.

Homojunction LEDs. A p-n junction made from two different mixtures of the

same types of atoms is called a homojunction structure. The simplest LED structures are

homojunction and epitaxially grown, or single-diffused semiconductor devices such as

the two shown.

Epitaxially grown LEDs are generally constructed of silicon-doped gallium-

arsenide as shown in first figure. A typical wavelength of light emitted from this

construction is 940 nm, and a typical output power is approximately 2 mW (3 dBm) at

100 mA of forward current. Light is emitted in all direction equally; therefore, only a

small amount of the total light produced is coupled into the fiber.

Planar diffused homojunction LEDs as shown in second figure has an output

approximately 500 uW at a wavelength of 900 nm. Its primary disadvantage is the

in optical fiber.

Heterojunction LEDs. These are made from a p-type semiconductor material of

one set of atoms and an n-type semiconductor material from another set. Heterojunction

devices are layered such that the concentration effect is enhanced. This produces a device

that confines the electron and hole carriers and the light to a much smaller area. The

junction is generally manufactured on a substrate backing material and then sandwiched

between metal contacts, which are used to connect the device to a source of electricity.

With this device, lights are emitted from the edge of the material and are therefore

often called edge emitters. The figure shown below is a heterojunction LED.

Burrus etched-well surface-emitting LED. For the more practical applications,

such as telecommunications, data rates in excess of 100 Mbps are required. That is why

etched-well LED was developed. The etched well helps concentrate the emitted light to a

very small area. These devices are more efficient than the standard surface emitters and

they allow more power to be coupled into the optical fibers, but they are also more

difficult and expensive to manufacture.

Edge-emitting LED. These LEDs emit a more directional light pattern than do

the surface-emitting LEDs. The construction is similar to the planar and Burrus diodes

except that the emitting surface is a stripe and forms an elliptical beam.
 Burrus etched-well surface-emitting LED

Edge-emitting LED

Laser Diodes (LDs)

Laser diodes and light-emitting diodes have quite similar constructions. In fact,

below a certain threshold current, an LD acts similarly to an LED. Above the threshold

current, an LD oscillates; lasing occurs. As current passes through a forward-biased p-n

junction diode, light is emitted by spontaneous emission at a frequency determined by the

energy gap of the semiconductor material. When a particular current level is reached, the

number of minority carriers and photons produced on either side of the p-n junction

reaches a level where they begin to collide with already excited minority carriers. This

causes an increase in the ionization energy level and makes the carriers unstable. In the

process, two photons are created; one is stimulated by another. For this to happen, a large

forward current that can provide many carriers (holes and electrons) is required.
 The construction of an LD is similar to that of an LD (as shown in the figure

above) except that the ends are highly polished. The mirrorlike ends trap the photons in

the active region and, as they reflect back and forth, stimulate free electrons to recombine

with holes at a higher-than-normal energy level. This process is called lasing.

Typical Characteristics of Diode Light Sources

Property LED LD
Spectral width (nm) 20-100 1-5
Rise time (ns) 2-250 0.1-1
Modulation bandwidth (MHz) <300 2000
Coupling efficiency Very low Moderate
Temperature sensitivity Low High
Circuit complexity Simple Complex
Lifetime (hours) 105 104-105
Costs Low High
Primary use Moderate paths Long paths
Moderate data rates High data rates