ESE-2017 : Prelims Exam E&T

UPSC Engineering Services Examination ENGINEERING

Test 3: Part Syllabus Technical
Answer Key & Solutions
Electronics Devices and Circuits

1. (c) 16. (d) 31. (a) 46. (a) 61. (c)

2. (c) 17. (b) 32. (d) 47. (d) 62. (a)

3. (d) 18. (d) 33. (b) 48. (a) 63. (c)

4. (d) 19. (d) 34. (c) 49. (c) 64. (c)

5. (d) 20. (b) 35. (c) 50. (c) 65. (b)

6. (c) 21. (c) 36. (a) 51. (d) 66. (a)

7. (d) 22. (c) 37. (b) 52. (b) 67. (d)

8. (d) 23. (c) 38. (a) 53. (c) 68. (a)

9. (a) 24. (b) 39. (a) 54. (c) 69. (b)

10. (b) 25. (b) 40. (d) 55. (a) 70. (d)

11. (b) 26. (c) 41. (d) 56. (b) 71. (a)

12. (d) 27. (a) 42. (c) 57. (b) 72. (a)

13. (b) 28. (d) 43. (c) 58. (b) 73. (a)

14. (a) 29. (a) 44. (c) 59. (c) 74. (a)

15. (d) 30. (c) 45. (c) 60. (c) 75. (c)
 E&T Engineering | Test 3 : Electronics Devices and Circuits 13

DETAILED EXPLANATIONS

2. (c)
In a metal, all electrons are free electrons. Therefore, electron concentration remains same even if the
temperature is raised. On increasing the temperature, the mobility of electrons decreases due to the more
thermal agitation. Therefore, electrical conductivity of a metal has negative temperature coefficient.

3. (d)
Potential barrier now becomes (V0 +Vr ) increase
where Vr is applied reverse bias voltage
space charge layer width W V0 + Vr
so, increase electric field
E xnoND
or E xpoNA
where, xno - part of depletion width on n - side increases as W increases with Vr .
xpo - part of depletion width on p - side increases as W increases with Vr .
so, electric field E increase.

5. (d)
From the given diagram VGS = 0
since VGS < VT , MOSFET will be in OFF state.
hence VD = 6 V and ID = 0

6. (c)
VCC

VCC
Vi = 3 V
+ Iout
Q

VCC
V
I
R

Iout = IB
since op-amp draws no current, V = Vi = 3 V

V 3
Current I = = A
R 10

3
I = IE = A
10
IE = (1 + 99)IB

3 3
= 100 IB (or) = 100 I out
10 10
3
Iout = = 3 mA
1000

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14 ESE 2017 Prelims Exam Offline Test Series

11. (b)
10 V

1 mA I 1.3 k
V0
I1 I2

Q1 Q2 Q3

10 V

Assume current I flows through the resistor 1.3 k.

Also given Q1, Q2 and Q3 are identical and is large
From the given diagram, Q1Q2 is pair of transistors form current mirror circuit. Therefore the current I1 = 1 mA
Similarly Q1Q3 pair of transistors also form current mirror circuit. Hence the current I2 = 1 mA.
The current I = I1 + I2 = 1 + 1 = 2 mA
output voltage V0 = 10 V 1.3 k (2 mA)
= (10 1.3 2) V
= (10 2.6) V
V0 = 7.4 V

12. (d)
Given IDSS = 10 mA, VP = 4 V
2
VGS
ID = IDSS 1
VP
by KVL in the input loop
2.5 VGS = 0
VGS = 2.5
2
2.5
ID = 10 103 1 A
4
ID = 1.4 mA
15 ID 2 k VDS = 0
VDS = 15 ID 2 k = 15 2.8
VDS = 12.2 V

13. (b)
We know that ICEO = (1 + )ICBO
= (49 + 1)20 106
ICEO = 1 mA
Now, by applying KVL around the loop that includes VCC, RB and ground

VCC VBEQ 10 0.7

IBQ = = = 93 A
RB 100 k

ICQ = I BQ + ICEO
= 49 93 106 + 1 103 A
ICQ = 5.557 mA

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 E&T Engineering | Test 3 : Electronics Devices and Circuits 15

22. (c)
By voltage division rule at inverting terminal of op-amp
V0 R1
Vf =
R1 + R2
R1 10
The feedback factor = =
R1 + R2 11
AOL 104
closed loop gain ACL = =
1 + AOL 10
1 + 104
11
ACL 1.1
25. (b)
Here, Vi = 2 V
D1 OFF and D2, D3, D4 are ON
V0 = 0.6 3 = 1.8 V
10 1.8
I = = 4.1mA
2k
27. (a)
For four-point method
V 0.22
R = 4.53 = 4.53 /square
I 10 10 3
R = 100 /square
29. (a)
As LED is forward bias,

i 60

40 0.7

10V
10 k

10 0.7
i = = 9.2079 10 4 A
(10 k + 100)
V10 k = 10k 9.2079 104 9.21 V
30. (c)
1016 1016 1010
n = 1 = 1 = 1
m3 10 6 cm3 cm3
Jn = 50 A/cm2
E = 15 V/cm
Jn 50
n = =
neE 1 10 1.6 10 19 15
10

n = 2.083 109 cm2/ V-s

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16 ESE 2017 Prelims Exam Offline Test Series

34. (c)
During an electron transition across the energy gap in an indirect energy gap material, both momentum and
energy of electron change.

38. (a)
Vz = VBE + I 1.8 k
6.2 = 0.7 + 1.8 k I

6.2 0.7
I = mA = 3.06 mA
1.8

39. (a)
Given = 100
Let the transistor be in active region
At the input loop
2.7 40 103 IB 0.7 = 0

1
IB = mA
20
IC = IB
= 5 mA
VCE = 10 2.5 103 5 103
VCE = 2.5 V
Transistor is in saturation region

42. (c)
Pinch off voltage in JFET depends on dimensions of device.

43. (c)

tr

ts td

Reverse recovery time tr = ts + td

ts = storage time (to remove stored minority carriers)
td = to bring the diode in reverse biased condition (i.e. VD = VR) and current i = 0.

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 E&T Engineering | Test 3 : Electronics Devices and Circuits 17

44. (c)
2 k
i

2 k

V0
+ 4V +
3mA

4
i = 3 mA + mA = 5 mA
2
V0 = (2 k) (5 mA) = 10 volts

45. (c)
20
V0 = 1 + 6.3 = 18.9 volts
10

46. (a)
Variable capacitance diodes are used under reverse-bias condition.

47. (d)
In a MOSFET operating in the saturation region, the channel length modulation effect causes a decrease in
the output resistance.

48. (a)
Oscillator is a feedback amplifier which satisfies the Barkhausen criterion given below:
(i) Loop gain A must be slightly greater than 1.
(ii) Loop phase shift must be multiple of 360.
Emitter follower is common-collector amplifier which has voltage series feedback.

49. (c)
Vcc = 10V

4 k 200 k

IB

+
0.5 mA IE
6V

530

From KVL, 0.7 + 530 I E = 6

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18 ESE 2017 Prelims Exam Offline Test Series

5.30
IE = = 10 mA
530
10 6
So, I4 k = = 1mA
4 10 3
IB = 0.5 mA
IE 10
Now, 1 + = I = 0.5 = 20
B

= 19

52. (b)
We shall assume that both diodes are conducting. It follows that VB = 0 and V0 = 0. The current through D2
can now be determined from
10 0
ID2 = = 1mA
10 10 3
Writing node equation at B,
0 (10)
I + (1 103) =
5 10 3
I = 1 mA
Thus D1 and D2 are conducting as originally assumed, and the final result is I = 1 mA and V0 = 0 V.

54. (c)
Photodiode is always operated in reverse bias and when light is off current flowing through this diode is
reverse saturation current as working as a normal diode when light is off.

56. (b)

V0 VS R
I0 = where V0 = 1 + L VS
RL RS

57. (b)
An op-amp based non-inverting amplifier is voltage series feedback amplifier. Voltage series feedback is
also known as series-shunt feedback.

59. (c)

n p
Generation rate = =
n p

Excess carrier concentration, n = p

1015
generation rate = = 1020 pair/cm3/sec
10 10 6

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 E&T Engineering | Test 3 : Electronics Devices and Circuits 19

60. (c)
ni2 T3
2 3
ni T1
2 n =
i T2

3
T2 = 4T1
T2 = 1.587 T1

61. (c)
W nCox
ID sat = (VGS VT )2
2L
W
4 103 = 25 106 (4)2
L
W
= 10
L
W = 10 L = 12.5 m

63. (c)
PD (derate) = PD (max) [(derating factor) T ]
= 400 mW (3.2 mW/C) [90C 50C]
= 400 mW 128 mW
= 272 mW
PD (derate) = 272 mW

64. (c)
Common base current gain
IC 0.995 103
= = = 0.995
IE 1.0 103
Common emitter current gain is
0.995
= = = 199
1 1 0.995

65. (b)
Given I = 5 mA, T = 300 k
VT
forward resistance of a PN junction diode rf =
I
T
VT =
11600
T
2
11600 = 2 300
rf = 3
5 10 11600 5 103
rf = 10.34

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20 ESE 2017 Prelims Exam Offline Test Series

73. (a)
A device can be used as oscillator if it exhibits negative resistance property and tunnel diode exhibited
this property so, A and R both are true and R is correct explanation.

75. (c)
For the feedback amplifier to oscillate its loop gain is unity and phase shift is zero.

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