RU75N08S

N-Channel Advanced Power MOSFET

Features Pin Description

75V/80A,
RDS (ON) =8m (typ.) @VGS=10V

Ultra Low On-Resistance

Exceptional dv/dt capability

Fast Switching and Fully Avalanche Rated

100% avalanche tested TO-263

175C Operating Temperature

Lead Free and Green Available

Applications
Switching Application Systems

N-Channel MOSFET

Absolute Maximum Ratings

Symbol Parameter Rating Unit
Common Ratings (TA=25C Unless Otherwise Noted)
VDSS Drain-Source Voltage 75
V
VGSS Gate-Source Voltage 25
TJ Maximum Junction Temperature 175 C
TSTG Storage Temperature Range -55 to 175 C
IS Diode Continuous Forward Current TC=25C A
80
Mounted on Large Heat Sink
IDP 300s Pulse Drain Current Tested TC=25C A
320
TC=25C
ID Continuous Drain Current(VGS=10V) 80 A
TC=100C 76
TC=25C 176
PD Maximum Power Dissipation W
TC=100C 88
RJC Thermal Resistance-Junction to Case 0.85 C/W
Drain-Source Avalanche Ratings

EAS Avalanche Energy, Single Pulsed 841 mJ

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Rev. E MAR., 2014
 RU75N08S

Electrical Characteristics (TA=25C Unless Otherwise Noted)

RU75N08S
Symbol Parameter Test Condition Unit
Min. Typ. Max.

Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A 75 V
VDS= 75V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current A
TJ=85C 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250A 2 3 4 V
IGSS Gate Leakage Current VGS=25V, VDS=0V 100 nA

RDS(ON) Drain-Source On-state Resistance VGS= 10V, IDS=40A 8 11 m

Diode Characteristics

VSD Diode Forward Voltage ISD=20 A, VGS=0V 1.2 V

trr Reverse Recovery Time 50 ns

ISD=40A, dlSD/dt=100A/s
qrr Reverse Recovery Charge 110 nC

Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.4
Ciss Input Capacitance 3400
VGS=0V,
Coss Output Capacitance VDS= 30V, 450 pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance 170
td(ON) Turn-on Delay Time 22
tr Turn-on Rise Time VDD=35V, RL=35, 11
IDS= 1A, VGEN= 10V, ns
td(OFF) Turn-off Delay Time RG=7 70
tf Turn-off Fall Time 62

Gate Charge Characteristics
Qg Total Gate Charge 75
VDS=60V, VGS= 10V,
Qgs Gate-Source Charge 18 nC
IDS=80A
Qgd Gate-Drain Charge 25

Notes: Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
Pulse width limited by safe operating area.
Limited by TJmax, IAS =58A, VDD = 48V, RG = 50 , Starting TJ = 25C.
Pulse test ; Pulse width300s, duty cycle2%.
Guaranteed by design, not subject to production testing.

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 RU75N08S

Typical Characteristics

Power Dissipation Drain Current

ID - Drain Current (A)

Ptot - Power (W)

Tj - Junction Temperature (C) Tj - Junction Temperature (C)

Safe Operation Area Thermal Transient Impedance

Normalized Effective Transient
ID - Drain Current (A)

VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec)

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 RU75N08S

Typical Characteristics

Output Characteristics Drain-Source On Resistance

RDS(ON) - On Resistance (m)

ID - Drain Current (A)

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Drain-Source On Resistance Gate Threshold Voltage

Normalized Threshold Voltage
RDS(ON) - On - Resistance (m)

VGS - Gate-Source Voltage (V) Tj - Junction Temperature (C)

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 RU75N08S

Typical Characteristics

Drain-Source On Resistance Source-Drain Diode Forward

Normalized On Resistance

IS - Source Current (A)

Tj - Junction Temperature (C) VSD - Source-Drain Voltage (V)

Capacitance Gate Charge

VGS - Gate-Source Voltage (V)
C - Capacitance (pF)

VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)

Copyright Ruichips Semiconductor Co., Ltd 5

Rev.E MAR., 2014 www.ruichips.com
 RU75N08S

Avalanche Test Circuit and Waveforms

Switching Time Test Circuit and Waveforms

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Rev.E MAR., 2014 www.ruichips.com
 RU75N08S

Ordering and Marking Information

Device Marking Package Packaging Quantity Reel Size Tape width

RU75N08S RU75N08S TO-263 Tube 50 - -

RU75N08S-R RU75N08S TO-263 Tape&Reel 800 13 24mm

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 RU75N08S

Package Information

TO-263-2L

MM INCH MM INCH
SYMBOL SYMBOL
MIN NOM MAX MIN NOM MAX MIN NOM MAX MIN NOM MAX
A 4.40 4.57 4.70 0.173 0.180 0.185 L 2.00 2.30 2.60 0.079 0.090 0.102
A1 0 0.10 0.25 0 0.004 0.010 L3 1.17 1.27 1.40 0.046 0.050 0.055
A2 2.59 2.69 2.79 0.102 0.106 0.110 L1 - - 1.70 - - 0.067
b 0.77 - 0.90 0.030 - 0.035 L4 0.25BSC 0.01BSC
b1 1.23 - 1.36 0.048 - 0.052 L2 2.50REF. 0.098REF.
c 0.34 - 0.47 0.013 - 0.019 0 - 8 0 - 8
C1 1.22 - 1.32 0.048 - 0.052 1 5 7 9 5 7 9
D 8.60 8.70 8.80 0.338 0.343 0.346 2 1 3 5 1 3 5
E 10.00 10.16 10.26 0.394 0.4 0.404 DEP 0.05 0.10 0.20 0.002 0.004 0.008
e 2.54BSC 0.1BSC p1 1.40 1.50 1.60 0.055 0.059 0.063
H 14.70 15.10 15.50 0.579 0.594 0.610

ALL DIMENSIONS REFER TO JEDEC STANDARD

DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS

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