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Silicon PNP Power Transistors Specs

The document provides specifications for SavantIC Semiconductor's silicon PNP power transistors models 2SA968, 2SA968A, and 2SA968B. The transistors come in a TO-220 package and are intended for power amplifier and driver stage applications. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and current. Electrical characteristics include breakdown voltage, saturation voltage, gain, and transition frequency.

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362 views3 pages

Silicon PNP Power Transistors Specs

The document provides specifications for SavantIC Semiconductor's silicon PNP power transistors models 2SA968, 2SA968A, and 2SA968B. The transistors come in a TO-220 package and are intended for power amplifier and driver stage applications. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and current. Electrical characteristics include breakdown voltage, saturation voltage, gain, and transition frequency.

Uploaded by

Khánh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors


www.DataSheet4U.com
2SA968 2SA968A 2SA968B

DESCRIPTION
·With TO-220 package
·Complement to type 2SC2238
·High breakdown votage

APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications

PINNING

PIN DESCRIPTION

1 Emitter

Collector;connected to
2
mounting base

3 Base Fig.1 simplified outline (TO-220) and symbol

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SA968 -160

VCBO 2SA968A Open emitter -180 V


Collector-base voltage
2SA968B -200

2SA968 -160

VCEO 2SA968A Open base -180 V


Collector-emitter voltage
2SA968B -200

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -1.5 A

IE Emitter current 1.5 A

PT Total power dissipation TC=25 25 W

Tj Junction temperature 150

Tstg Storage temperature -55~150

www.DataSheet.in
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors


www.DataSheet4U.com
2SA968 2SA968A 2SA968B

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

2SA968 -160

Collector-emitter
V(BR)CEO 2SA968A IC=-10mA; IB=0 -180 V
breakdown voltage

2SA968B -200

V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V

VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -1.5 V

VBE Base-emitter on voltage IC=-500mA ; VCE=-5V -1.0 V

ICBO Collector cut-off current VCB=-160V ;IE=0 -1.0 µA

IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 µA

hFE DC current gain IC=-100mA ; VCE=-5V 70 240

Cob Output capacitance IE=0 ; VCB=-10V,f=1MHz 30 pF

fT Transition frequency IC=-100mA ; VCE=10V 100 MHz

hFE Classifications

O Y

70-140 120-240

www.DataSheet.in
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors


www.DataSheet4U.com
2SA968 2SA968A 2SA968B

PACKAGE OUTLINE

Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

www.DataSheet.in

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