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2sa1306 - 2sa1306a - 2sa1306b

This document specifies silicon PNP power transistors with TO-220Fa packaging for use in power and driver stage amplifier applications. It provides maximum ratings for voltage, current, power, and temperature. Characteristics include breakdown voltage, saturation voltage, gain, capacitance, and transition frequency. The transistors come in three variants with increasing maximum voltage ratings and are classified by their current gain range.

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380 views3 pages

2sa1306 - 2sa1306a - 2sa1306b

This document specifies silicon PNP power transistors with TO-220Fa packaging for use in power and driver stage amplifier applications. It provides maximum ratings for voltage, current, power, and temperature. Characteristics include breakdown voltage, saturation voltage, gain, capacitance, and transition frequency. The transistors come in three variants with increasing maximum voltage ratings and are classified by their current gain range.

Uploaded by

isaiasva
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Product Specification www.jmnic.

com

Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B

DESCRIPTION ・
・With TO-220Fa package
・Complement to type
2SC3298,2SC3298A,2SC3298B

APPLICATIONS
・Power amplifier applications
・Driver stage amplifier applications

PINNING

PIN DESCRIPTION

1 Emitter

2 Collector

3 Base

Absolute maximum ratings(Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SA1306 -160

VCBO Collector-base voltage 2SA1306A Open emitter -180 V

2SA1306B -200

2SA1306 -160

VCEO Collector-emitter voltage 2SA1306A Open base -180 V

2SA1306B -200

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -1.5 A

IB Base current -0.15 A

PC Collector power dissipation TC=25℃ 20 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃

JMnic
Product Specification www.jmnic.com

Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

2SA1306 -160

Collector-emitter
V(BR)CEO 2SA1306A IC=10mA , IB=0 -180 V
breakdown voltage

2SA1306B -200

VCEsat Collector-emitter saturation voltage IC=-0.5A, IB=-50mA -1.5 V

VBE Base-emitter voltage IC=-0.5A ,VCE=-5V -1.0 V

ICBO Collector cut-off current VCB=-160V, IE=0 -1.0 μA

IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 μA

hFE DC current gain IC=-0.1A ; VCE=-5V 70 240

Cob Output capacitance IE=0 ; VCB=-10V,f=1MHz 30 pF

fT Transition frequency IC=-0.1A ; VCE=-10V 100 MHz

hFE Classifications
O Y

70-140 120-240

JMnic
Product Specification www.jmnic.com

Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

JMnic

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