MRF648
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF648 is Designed for
12.5 V UHF large signal amplifier
applications up to 512 MHz. PACKAGE STYLE .500 6L FLG
C A
FEATURES:
2x Ø N
• Internal Input Matching Network D
FU LL R
• PG = 4.4 dB at 60 W/470 MHz
• Omnigold™ Metalization System B E
.725/18,42
G F
MAXIMUM RATINGS H I
K
L
M
IC 11 A D IM M IN IM U M M AXIM U M
inches / m m inches / m m
VCBO 36 V A
B
.150 / 3.43
.045 / 1.14
.160 / 4.06
C .210 / 5.33 .220 / 5.59
VCEO 16 V D .835 / 21.21 .865 / 21.97
E .200 / 5.08 .210 / 5.33
VEBO 4.0 V F .490 / 12.45 .510 / 12.95
G .003 / 0.08 .007 / 0.18
H .125 / 3.18
PDISS 175 W @ TC = 25 °C I .725 / 18.42
J .970 / 24.64 .980 / 24.89
TJ -65 °C to +200 °C K .090 / 2.29 .105 / 2.67
L .150 / 3.81 .170 / 4.32
TSTG -65 °C to +150 °C M
N .120 / 3.05
.285 / 7.24
.135 / 3.43
θJC 1.0 °C/W
Common Emitter
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCES IC = 50 mA 36 V
BVCEO IC = 50 mA 16
BVEBO IE = 5.0 Ma 4.0 V
ICES VCE = 15 V 15 mA
hFE VCE = 5.0 V IC = 6.0 A 20 150 ---
COB VCB = 12.5 V f = 1.0 MHz 130 150 pF
PG 4.4 5.0 dB
VCE = 12.5 V POUT = 60 W f = 470 MHz
ηC 55 65 %
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
