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Silicon Transistor Specs

The document provides specifications for the NTE2649 and NTE2650 silicon complementary transistors. These are Darlington transistors with an NPN and PNP configuration. Absolute maximum ratings include collector-base voltage up to 200V, collector current up to 15A, and operating junction temperature up to 150°C. Electrical characteristics include a typical DC current gain of 5000, collector-emitter saturation voltage below 2.5V, and transition frequency of 70MHz. Dimensional drawings of the transistor packages are also provided.

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143 views2 pages

Silicon Transistor Specs

The document provides specifications for the NTE2649 and NTE2650 silicon complementary transistors. These are Darlington transistors with an NPN and PNP configuration. Absolute maximum ratings include collector-base voltage up to 200V, collector current up to 15A, and operating junction temperature up to 150°C. Electrical characteristics include a typical DC current gain of 5000, collector-emitter saturation voltage below 2.5V, and transition frequency of 70MHz. Dimensional drawings of the transistor packages are also provided.

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secom07
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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NTE2649 (NPN) & NTE2650 (PNP)

Silicon Complementary Transistors


Darlington

Absolute Maximum Ratings: (TA = +255C unless otherwise specified)


Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Power Dissipation (TA = +255C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C

Electrical Characteristics: (TA = +255C unless otherwise specified)


Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 200V, IE = 0 − − 100 5A
Emitter Cutoff Current IEBO VEB = 5V, IC = 0 − − 100 5A
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 30mA 180 − − V
DC Current Gain hFE VCE = 4V, IC = 10A 5000 − −
Collector−Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 10mA − − 2.5 V
Base−Emitter Saturation Voltage VBE(sat) IC = 10A, IB = 10mA − − 3.0 V
Transition Frequency fT VCE = 12V, IE = 2A − 70 − MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz − 120 − pF
Rev. 5−14
Schematic Diagram

NTE2649 C NTE2650 C

B B

E E

.190 (4.82) .615 (15.62)

.787
(20.0)
.591
(15.02) .126
(3.22)
Dia

.787
(20.0)

B C E

.215 (5.47)

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