Scilab Textbook Companion for

Solid State Electronic Devices

by B. G. Streetman And S. K. Banerjee1

Created by
Priyanka Jain
B.Tech + M.Tech Dual Degree
Electrical Engineering
IIT Bombay
College Teacher
Nil
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July 31, 2019

1 Funded by a grant from the National Mission on Education through ICT,

http://spoken-tutorial.org/NMEICT-Intro. This Textbook Companion and Scilab
codes written in it can be downloaded from the ”Textbook Companion Project”
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Book Description

Title: Solid State Electronic Devices

Author: B. G. Streetman And S. K. Banerjee

Publisher: PHI Learning Pvt. Ltd., New Delhi

Edition: 6

Year: 2006

ISBN: 978-81-203-3020-7

1
 Scilab numbering policy used in this document and the relation to the
above book.

Exa Example (Solved example)

Eqn Equation (Particular equation of the above book)

AP Appendix to Example(Scilab Code that is an Appednix to a particular

Example of the above book)

For example, Exa 3.51 means solved example 3.51 of this book. Sec 2.3 means
a scilab code whose theory is explained in Section 2.3 of the book.

2
Contents

List of Scilab Codes 4

1 Crystal Properties and Growth of Semiconductors 5

2 Atoms and Electrons 8

3 Energy Bands and Charge Carriers in Semiconductors 9

4 Excess Carriers in Semiconductors 15

5 Junctions 20

6 Field Effect Transistors 24

7 Bipolar Junction Transistor 27

8 Optoelectronic Devices 29

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List of Scilab Codes

Exa 1.1 Maximum packing fraction . . . . . . . . . . 5

Exa 1.2 planes and directions . . . . . . . . . . . . . 5
Exa 1.3 Volume density of Silicon in lattice . . . . . 6
Exa 1.4 Czochralski method for Silicon crystal growth 6
Exa 2.1 expectation of momentum . . . . . . . . . . 8
Exa 3.1 free electron momentum . . . . . . . . . . . 9
Exa 3.2 E k Rleationship . . . . . . . . . . . . . . . 9
Exa 3.3 radius of electron orbit . . . . . . . . . . . . 11
Exa 3.4 density of states effective mass . . . . . . . . 11
Exa 3.5 equilibrium hole concentration . . . . . . . . 12
Exa 3.6 conductivity effective mass . . . . . . . . . . 12
Exa 3.7 current and resistance in a Si bar . . . . . . 13
Exa 3.8 concentration and mobility of majority carrier 13
Exa 4.1 Excitation and band to band recombination
leading to photoluminescence . . . . . . . . 15
Exa 4.2 decay of excess population for a carrier re-
combination . . . . . . . . . . . . . . . . . . 16
Exa 4.3 steady state carrier generation . . . . . . . . 17
Exa 4.4 electron quasi fermi level position and carrier
concentration . . . . . . . . . . . . . . . . . 17
Exa 4.5 diffusion length and hole current . . . . . . 18
Exa 4.6 Haynes Shockley experiment . . . . . . . . . 19
Exa 5.1 contact potential and fermi level position . . 20
Exa 5.2 electric field and charge density in junction . 20
Exa 5.4 Current in forward and reverse biased pn junc-
tion . . . . . . . . . . . . . . . . . . . . . . 21
Exa 5.6 depletion capacitance . . . . . . . . . . . . . 22
Exa 5.7 Heterojunctions . . . . . . . . . . . . . . . . 23

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Exa 6.1 mos transistor . . . . . . . . . . . . . . . . . 24
Exa 6.2 drain current in mosfet . . . . . . . . . . . . 25
Exa 6.3 ion implantation . . . . . . . . . . . . . . . 26
Exa 7.1 steady state charge in transistor . . . . . . . 27
Exa 7.4 bjt saturation current . . . . . . . . . . . . 27
Exa 8.2 solar cells . . . . . . . . . . . . . . . . . . . 29
Exa 8.3 fibre optic communication . . . . . . . . . . 29

5
 Chapter 1

Crystal Properties and Growth

of Semiconductors

Scilab code Exa 1.1 Maximum packing fraction

1 a = 5; // l a t t i c e c o n s t a n t
2 b = 0.5* sqrt ( a ^2 + a ^2 + a ^2) ; // s e p a r a t i o n b e t w e e n
n e a r e s t atoms
3 r = 0.5* b ; // r a d i u s o f e a c h atom
4 V = 4/3* %pi * r * r * r ; // Volume o f e a c h atom
5 n = 1+8*0.125; // number o f atoms p e r c u b e
6 pf = V * n /( a * a * a ) ; // p a c k i n g f r a c t i o n
7 disp ( ” 1 ) ” )
8 disp (a , ” l a t t i c e c o n s t a n t ( i n a r m s t r o n g )=” )
9 disp (r , ” r a d i u s o f atoms ( i n a r m s t r o n g ) =” )
10 disp ( pf , ”maximum p a c k i n g f r a c t i o n =” )

Scilab code Exa 1.2 planes and directions

1 disp ( ” The p l a n e i l l u s t r a t e d i n F i g . 1−5 h a s

i n t e r c e p t s a t 2 a , 4 b and l c a l o n g t h e t h r e e

6
 c r y s t a l a x e s . Taking t h e r e c i p r o c a l s o f t h e s e
i n t e r c e p t s , we g e t 1 / 4 , 1 / 2 , and 1 . These t h r e e
f r a c t i o n s have t h e same r e l a t i o n s h i p t o e a c h
o t h e r a s t h e i n t e g e r s 2 , 1 , and 4 ( o b t a i n e d by
m u l t i p l y i n g e a c h f r a c t i o n by 4 ) . Thus t h e p l a n e
can be r e f e r r e d t o a s a ( 2 1 4 ) p l a n e . The o n l y
exception i s i f the i n t e r c e p t i s a f r a c t i o n of
t h e l a t t i c e c o n s t a n t a . I n t h a t c a s e , we do n o t
reduce i t to the lowest s e t of i n t e g e r s . ”)
2 x = 0:0.05:2;
3 y = 0:0.1:4;
4 a =2;
5 b =4;
6 c =1;
7 deff ( ’ [ z ]= f s ( x , y ) ’ , ’ z = ( 1 − ( 0 . 5 ∗ x ) − ( 0 . 2 5 ∗ y ) ) ’ ) ;
8 // z = ( 1 − ( 0 . 5 ∗ x ) − ( 0 . 2 5 ∗ y ) ) ;
9 fplot3d (x ,y , fs ) ;

Scilab code Exa 1.3 Volume density of Silicon in lattice

1 a = 5.43*10^ -8; // l a t t i c e c o n s t a n t
2 d = (1+4*0.25) /( a * a ) ; // a r e a l d e n s i t y on ( 1 0 0 ) p l a n e
3 n = 2*(6*0.5+8*0.125) ; // number o f atoms p e r c u b e
4 V = n /( a * a * a ) ; // volume d e n s i t y
5 disp ( ” 3 ) ” )
6 disp (a , ” l a t t i c e c o n s t a n t ( i n cm )=” )
7 disp (d , ” a r e a l d e n s i t y on ( 1 0 0 ) p l a n e ( i n p e r cm
s q u a r e ) =” )
8 disp (V , ” volume d e n s i t y ( i n p e r cm c u b e ) =” )

Scilab code Exa 1.4 Czochralski method for Silicon crystal growth

1 n = 10^16; // d e s i r e d d e n s i t y o f P atoms

7
2 k = 0.35;
3 l = 5000; // i n i t i a l l o a d o f S i i n grams
4 w =31; // a t o m i c w e i g h t o f P
5 d = 2.33; // d e n s i t y o f S i
6 i = n / k ; // i n i t i a l c o n c e n t r a t i o n o f P i n melt ,
a s s u m i n g C( S )=kC ( L )
7 V = l / d ; // volume o f S i
8 N = i * V ; // number o f P atoms
9 W = N * w /(6.02*10^23)
10 disp ( ” 4 . a ) ” )
11 disp (n , ” d e s i r e d d e n s i t y o f P atoms ( p e r c u b i c
c e n t i m e t e r )=” )
12 disp (i , ” i n i t i a l c o n c e n t r a t i o n o f P i n m e l t ( i n p e r
c u b i c cm )=” )
13 disp ( ” 4 . b ) ” )
14 disp (V , ” Volume o f S i ( i n c u b i c cm ) =” )
15 disp (N , ” number o f P atoms =” )
16 disp (W , ” w e i g h t o f p h o s p h o r u s t o be added ( i n grams ) =
”)

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 Chapter 2

Atoms and Electrons

Scilab code Exa 2.1 expectation of momentum

1 // j=c o m p l e x ( 0 , 1 ) ;
2 // p s i = A∗ exp ( j ∗ k ∗ x ) ;
3 disp ( ” px = h c r o s s ∗ k ( x ) ” ) ;
4 disp ( ” I f we t r y t o e v a l u a t e t h e s e i n t e g r a l s d i r e c t l y
, we run i n t o t h e p r o b l e m t h a t b o t h n u m e r a t o r and
d e n o m i n a t o r t e n d t o i n f i n i t y , b e c a u s e an i d e a l
p l a n e wave i s s t r i c t l y n o t a n o r m a l i z a b l e wave
f u n c t i o n . The t r i c k t o u s e i s t o c h o o s e t h e
l i m i t s o f i n t e g r a t i o n from , say , −L/2 t o +L/2 i n
a r e g i o n o f l e n g t h L . The f a c t o r L c a n c e l s o u t i n
t h e n u m e r a t o r and d e n o m i n a t o r . Then we can
c o n s i d e r L a p p r o a c h e s i n f i n i t y . For wave
f u n c t i o n s that are normalizable , such a
m a t h e m a t i c a l t r i c k d o e s n o t have t o be u s e d . ” )

9
 Chapter 3

Energy Bands and Charge

Carriers in Semiconductors

Scilab code Exa 3.1 free electron momentum

1 // j=c o m p l e x ( 0 , 1 ) ;
2 // p s i = U∗ exp ( j ∗ k ∗ x ) ;
3 disp ( ” px = h c r o s s ∗ k ( x ) ” ) ;
4 disp ( ” With i n f i n i t e l i m i t s o f i n t e g r a t i o n , b o t h t h e
n u m e r a t o r and d e n o m i n a t o r a r e i n f i n i t e . For
p r o b l e m s o f t h i s type , one i n t e g r a t e s b e t w e e n t h e
f i n i t e l i m i t s −LI2 and +L/2 and , i n t h e f i n a l
r e s u l t , then assumes that L approaches i n f i n i t y .
T h i s r e s u l t i m p l i e s t h a t ( E , k ) d i a g r a m s can be
c o n s i d e r e d p l o t s o f e l e c t r o n e n e r g y v s . momentum ,
with a s c a l i n g f a c t o r h c r o s s . ”)

Scilab code Exa 3.2 E k Rleationship

10
Figure 3.1: E k Rleationship

11
 1 // p= m∗ v
2 // p= h∗ k ; // e l e c t r o n momentum , where h i s c o n s t a n t
3 //E = 0 . 5 ∗ p∗p /m
4 //E = 0 . 5 ∗ h∗ k ∗ k /m; // e l e c t r o n e n e r g y
5 k = -10:0.01:10; // l i m i t s on wave v e c t o r k
6 E = k ^2; // E i s p r o p o r t i o n a l t o s q u a r e o f wave
vector
7 plot (k , E )

Scilab code Exa 3.3 radius of electron orbit

1 n = 1;
2 epsilonr = 11.8; // r e l a t i v e d i e l e c t r i c constant for
silicon
3 epsilon = 8.85*10^ -12; // d i e l e c t r i c c o n s t a n t
4 m = 9.11*10^ -31; // mass o f e l e c t r o n
5 mn = 0.26* m ; // f o r s i l i c o n
6 h = 6.63*10^ -34;
7 q = 1.6*10^ -19; // e l e c t r o n i c c h a r g e
8 r = 10^10*( epsilonr * epsilon * h * h ) /( mn * q * q * %pi ) ; //
ra di us in armstrong
9 disp (r , ” r a d i u s o f e l e c t r o n o r b i t a r o u n d d o n o r ( i n
a r m s t r o n g ) =” )
10 disp ( ” T h i s i s more t h a n 4 l a t t i c e s p a c i n g s a = 5 . 4 3
armstrong . ”)

Scilab code Exa 3.4 density of states effective mass

1 m = 9.11*10^ -31; // mass o f e l e c t r o n

2 ml = 0.98* m ;
3 ms = 0.19* m ;
4 mn = 6^(2/3) *( ml * ms * ms ) ^(1/3) ; // d e n s i t y o f s t a t e s
e f f e c t i v e mass c a l c u l a t i o n

12
5 mn0 = mn / m ;
6 disp ( mn , ” d e n s i t y o f s t a t e s e f f e c t i v e mass ( i n
k i l o g r a m )=” )
7 disp ( mn0 , ” d e n s i t y o f s t a t e s e f f e c t i v e mass i n
p r o p o r t i o n t o mass o f e l e c t r o n = ” )

Scilab code Exa 3.5 equilibrium hole concentration

1 n0 = 10^17; // c o n c e n t r a t i o n o f e l e c t r o n s
2 ni = 1.5*10^10; // i n t r i n s i c c o n c e n t r a t i o n
3 T = 300; // ( t e m p e r a t u r e i n K e l v i n )
4 p0 = ni * ni / n0 ; // c o n c e n t r a t i o n o f h o l e s
5 k = 0.0259; // Boltzmann ’ s c o n s t a n t m u l t i p l i e d w i t h T
= 300
6 E = k * log ( n0 / ni ) ;
7 disp ( p0 , ” c o n c e n t r a t i o n o f h o l e s ( i n p e r c u b i c
c e n t i m e t e r )=” )
8 disp (E , ” Fermi l e v e l e n e r g y w i t h r e s p e c t t o i n t r i n s i c
l e v e l e n e r g y ( i n e l e c t r o n v o l t )=” )

Scilab code Exa 3.6 conductivity effective mass

1 m = 9.11*10^ -31; // mass o f e l e c t r o n

2 ml = 0.98* m ;
3 mt = 0.19* m ;
4 mninverse = (1/3) * ((1/ ml ) +(2/ mt ) ) ;
5 mn = 1/ mninverse ;
6 mn0 = mn / m ;
7 disp ( mn0 , ” C o n d u c t i v i t y e f f e c t i v e mass i n p r o p o r t i o n
t o mass o f an e l e c t r o n =” )

13
 Scilab code Exa 3.7 current and resistance in a Si bar

1 un = 700;
2 q = 1.6*10^ -19;
3 n0 = 10^17;
4 L = 0.1;
5 A = 10^ -6;
6 V = 10;
7 sigma = q * un * n0 ;
8 rho = 1/ sigma ;
9 R = rho * L / A ;
10 I = V/R;
11 disp ( sigma , ” C o n d u c t i v i t y ( i n p e r ohm−cm )=” )
12 disp ( rho , ” r e s i s t i v i t y ( i n ohm−cm )=” )
13 disp (R , ” r e s i s t a n c e ( i n ohm )=” )
14 disp (I , ” c u r r e n t ( i n ampere )=” )

Scilab code Exa 3.8 concentration and mobility of majority carrier

1 w = 0.01;
2 w1 = w *10^ -3
3 t = 10^ -3;
4 L = 0.5;
5 B = 10*10^ -5;
6 I = 10^ -3;
7 Vab = -2 *10^ -3;
8 Vcd = 0.1;
9 q = 1.6*10^ -19;
10 q1 = q *10^ -3
11 n0 = I * B /( q1 * - Vab ) ;
12 rho = ( Vcd / I ) /( L / w1 ) ;
13 u = 1/( rho * q * n0 ) ;
14 disp ( n0 , ” e l e c t r o n c o n c e n t r a t i o n ( i n p e r c u b i c
c e n t i m e t e r )=” )
15 disp ( rho , ” r e s i s i t i v i t y ( i n ohm−cm )=” )

14
16 disp (u , ” m o b i l i t y ( i n s q u a r e cm p e r v o l t −s e c )=” )

15
 Chapter 4

Excess Carriers in
Semiconductors

Scilab code Exa 4.1 Excitation and band to band recombination leading to photolumi

1 t = 0.46 *10^ -4;

2 hv = 2;
3 alpha = 5*10^4;
4 I0 = 10^ -2;
5 It = I0 * exp ( - alpha * t ) ;
6 Pabs = I0 - It ;
7 f = (2 -1.43) /2;
8 P = f * Pabs ;
9 n = Pabs /(1.6*10^ -19* hv ) ;
10 disp ( Pabs , ” t o t a l e n e r g y a b s o r b e d p e r s e c o n d ( i n w a t t
)=” )
11 disp (P , ” amount o f e n e r g y c o n v e r t e d t o h e a t p e r
s e c o n d ( i n w a t t )=” )
12 disp (n , ” number o f p h o t o n s p e r s e c o n d g i v e n o f f form
r e c o m b i n a t i o n e v e n t s =” )

16
 Figure 4.1: decay of excess population for a carrier recombination

Scilab code Exa 4.2 decay of excess population for a carrier recombination

1 p0 = 10^15;
2 ni = 10^6;
3 n0 = ni ^2/ p0 ;
4 disp ( n0 , ” M i n o r i t y e l e c t r o n concentration ( in per
c u b i c c e n t i m e t e r )=” )
5 dn = 10^14;
6 dp = 10^14;
7 tn = 10; // i n n a n o s e c o n d s
8 tp = tn ;
9 t = 0:10:50;
10 del_n = dn * exp ( - t / tn ) ;
11 del_p = dp * exp ( - t / tp ) ;
12 p = p0 + del_p ;
13 n = del_n ; // s i n c e n0 i s n e g l i g i b l e
14 subplot (121) ;
15 plot (t , log ( p ) ) ;
16 plot (t , log ( n ) ) ;
17 subplot (122) ;

17
 Figure 4.2: decay of excess population for a carrier recombination

18 plot (t , p ) ;
19 plot (t , n ) ;

Scilab code Exa 4.3 steady state carrier generation

1 n0 = 10^14;
2 ni = 1.5*10^10;
3 Tn = 2 *10^ -6;
4 Tp = 2 *10^ -6;
5 p = 2*10^13;
6 p0 = ni ^2/ n0 ;
7 disp ( p0 , ” h o l e c o n c e n t r a t i o n ( p e r c u b i c c e n t i m e t e r )=”
)

Scilab code Exa 4.4 electron quasi fermi level position and carrier concentration

18
 1 n0 = 10^14;
2 dn = 2*10^13;
3 n = n0 + dn ;
4 kT = 0.0259;
5 ni = 1.5*10^10;
6 Ei = kT * log ( n0 / ni ) ;
7 Fn = Ei + kT * log ( n / ni ) ;
8 E = Fn - Ei ;
9 disp (n , ” s t e a d y s t a t e e l e c t r o n c o n c e n t r a t i o n=” )
10 disp ( Ei , ” e q u i l i b r i u m Fermi l e v e l ( i n eV )=” )
11 disp (E , ” e l e c t r o n q u a s i Fermi l e v e l p o s i t i o n ( i n eV )=”
)

Scilab code Exa 4.5 diffusion length and hole current

1 A = 0.5;
2 Na = 10^17;
3 p0 = Na ;
4 ni = 1.5*10^10;
5 dp = 5*10^16;
6 x = 10^ -5;
7 up = 500;
8 Tp = 10^ -10;
9 kT = 0.0259;
10 q0 = 1;
11 q = 1.6*10^ -19;
12 Dp = kT * up / q0 ;
13 Lp = sqrt ( Dp * Tp ) ;
14 p = p0 + dp * exp ( - x / Lp ) ;
15 E = kT * log ( p / ni ) ;
16 E0 = 1.1/2 + E ;
17 Ip = q * A * Dp * dp * exp ( - x / Lp ) / Lp ;
18 Qp = q * A * dp * Lp ;
19 Qp0 = Qp *10^6;
20 disp ( E0 , ” s t e a d y s t a t e s e p a r a t i o n b e t w e e n Fp and Ec (

19
 i n eV )=” )
21 disp ( Ip , ” h o l e c u r r e n t ( i n ampere )=” )
22 disp ( Qp , ” e x c e s s s t o r e d h o l e c h a r g e ( i n coulomb )=” )
23 disp ( Qp0 , ” e x c e s s s t o r e d h o l e c h a r g e ( i n micro −
coulomb )=” )

Scilab code Exa 4.6 Haynes Shockley experiment

1 l = 1;
2 d = 0.95;
3 E0 = 2;
4 t = 0.25*10^ -3;
5 dt = 117*10^ -6;
6 up = ( d / t ) /( E0 / l ) ;
7 Dp = dt ^2* d ^2/(16* t ^3) ;
8 C = Dp / up ;
9 kT = 0.0259;
10 disp ( up , ” h o l e m o b i l i t y ( i n s q u a r e cm p e r Volt −s e c o n d
)=” )
11 disp ( Dp , ” d i f f u s i o n c o e f f i c i e n t ( i n s q u a r e cm p e r
s e c o n d )=” )
12 disp (C , ” D i f f i s u i o n c o e f f i c i e n t / H o l e m o b i l i t y ( i n
v o l t s ) = ”)
13 disp ( ” V e r i f i e d a c c o r d i n g t o E i n s t e i n R e l a t i o n ” )

20
 Chapter 5

Junctions

Scilab code Exa 5.1 contact potential and fermi level position

1 Na = 10^18;
2 Nd = 5*10^15;
3 ni = 1.5*10^10;
4 kT = 0.0259;
5 E1 = kT * log ( Na / ni ) ;
6 E2 = kT * log ( Nd / ni ) ;
7 qV1 = E1 + E2 ;
8 qV2 = kT * log ( Na * Nd / ni ^2) ;
9 disp ( E1 , ” Fermi l e v e l p o s i t i o n i n p r e g i o n ( i n eV )=” )
10 disp ( E2 , ” Fermi l e v e l p o s i t i o n i n n r e g i o n ( i n eV )=” )
11 disp ( qV1 , ” C o n t a c t p o t e n t i a l ( i n eV )=” )
12 disp ( qV2 , ” C o n t a c t p o t e n t i a l ( i n eV )=” )
13 disp ( ” C o n t a c t p o t e n t i a l v a l u e v e r i f i e d ” )

Scilab code Exa 5.2 electric field and charge density in junction

1 Na = 10^18;
2 Nd = 5*10^15;

21
 3 ni = 1.5*10^10;
4 kT = 0.0259;
5 epsilon0 = 8.85*10^ -14;
6 epsilon = 11.8;
7 q = 1.6*10^ -19;
8 E1 = kT * log ( Na / ni ) ;
9 E2 = kT * log ( Nd / ni ) ;
10 qV1 = E1 + E2 ;
11 qV2 = kT * log ( Na * Nd / ni ^2) ;
12 d = 10*10^ -4; // i n c e n t i m e t r e
13 A = %pi * d ^2/4;
14 W = sqrt (2* epsilon * epsilon0 * qV1 / q *( Na ^ -1 + Nd ^ -1) ) ;
15 xn0 = W /(1+( Nd / Na ) ) ;
16 xp0 = W /(1+( Na / Nd ) ) ;
17 Q = q * A * xn0 * Nd ;
18 E0 = -q * xn0 * Nd /( epsilon * epsilon0 ) ;
19 disp ( W *10^4 , ” w i d t h o f t h e t r a n s i t i o n r e g i o n ( i n
m i c r o n )=” )
20 disp ( xn0 *10^4 , ” p e n e t r a t i o n o f t h e s p a c e c h a r g e
r e g i o n i n t o t h e n m a t e r i a l ( i n m i c r o n )=” )
21 disp ( xp0 *10^4 , ” p e n e t r a t i o n o f t h e s p a c e c h a r g e
r e g i o n i n t o t h e p m a t e r i a l ( i n m i c r o n )=” )
22 disp (Q , ” t o t a l u n c o m p e n s a t e d c h a r g e ( i n coulomb )=” )
23 disp ( E0 , ”maximum e l e c t r i c f i e l d ( i n V p e r cm )=” )

Scilab code Exa 5.4 Current in forward and reverse biased pn junction

1 A = 10^ -4;
2 kT = 0.0259;
3 ni = 1.5*10^10;
4 q = 1.6*10^ -19;
5 q0 = 1;
6 Na = 10^17;
7 Nd = 10^15;
8 Tn = 10^ -7;

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 9 Tp = 10^ -5;
10 upp = 200;
11 unn = 1300;
12 unp = 700;
13 upn = 450;
14 V1 = 0.5;
15 V2 = -0.5;
16 pn = ni ^2/ Nd ;
17 np = ni ^2/ Na ;
18 Dp = kT * upn / q0 ;
19 Dn = kT * unp / q0 ;
20 Lp = sqrt ( Dp * Tp ) ;
21 Ln = sqrt ( Dn * Tn ) ;
22 I1 = q * A *(( Dp * pn / Lp ) +( Dn * np / Ln ) ) *( exp ( q0 * V1 / kT ) -1) ;
23 I2 = -q * A *(( Dp * pn / Lp ) +( Dn * np / Ln ) ) ;
24 disp ( pn , ” h o l e c o n c e n t r a t i o n ( p e r c u b i c c e n t m e t e r )=” )
25 disp ( np , ” e l e c t r o n c o n c e n t r a t i o n ( p e r c u b i c c e n t m e t e r
)=” )
26 disp ( Dp , ” d i f f u s i o n c o e f f i c i e n t on n s i d e ( i n s q u a r e
c e n t i m t e r p e r s e c o n d )=” )
27 disp ( Dn , ” d i f f u s i o n c o e f f i c i e n t on p s i d e ( i n s q u a r e
c e n t i m t e r p e r s e c o n d )=” )
28 disp ( I1 *10^6 , ” c u r r e n t a t f o r w a r d b i a s ( i n
m i c r o a m p e r e )=” )
29 disp ( I2 *10^6 , ” c u r r e n t a t r e v e r s e b i a s ( i n
m i c r o a m p e r e )=” )

Scilab code Exa 5.6 depletion capacitance

1 A = 10^ -4;
2 kT = 0.0259;
3 ni = 1.5*10^10;
4 q = 1.6*10^ -19;
5 Na = 10^17;
6 Nd = 10^15;

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 7 epsilon0 = 8.85*10^ -14;
8 epsilon = 11.8;
9 E1 = kT * log ( Na / ni ) ;
10 E2 = kT * log ( Nd / ni ) ;
11 V0 = E1 + E2 ;
12 V = -4;
13 Cj = sqrt ( epsilon * epsilon0 ) * A * sqrt ( q * Nd * Na /(2*( V0 - V )
*( Na + Nd ) ) ) ;
14 disp ( V0 , ”V0 ( i n v o l t )=” )
15 disp ( Cj , ” t o t a l d e p l e t i o n c o n s t a n t ( i n f a r a d )=” )

Scilab code Exa 5.7 Heterojunctions

1 dEtg = 1.85;
2 band_gap = 1.43; // f o r GaAs−AlGaAs s y s t e m
3 dEg = dEtg - band_gap ;
4 dEc = dEg *2/3;
5 dEv = dEg /3;
6 disp ( dEc , ” C o n d u c t i o n band o f f s e t ( i n eV ) =” )
7 disp ( dEv , ” V a l e n c e band o f f s e t ( i n eV ) =” )

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 Chapter 6

Field Effect Transistors

Scilab code Exa 6.1 mos transistor

1 kT = 0.0259;
2 ni = 1.5*10^10;
3 q = 1.6*10^ -19;
4 q0 = 1;
5 epsilon0 = 8.85*10^ -14;
6 epsilon = 11.8;
7 epsiloni = 3.9;
8 Na = 5*10^15;
9 d = 10^ -6;
10 Qi = 4*10^10* q ;
11 Vf = kT * log ( Na / ni ) / q0 ;
12 Wm = 2* sqrt ( epsilon * epsilon0 * Vf /( q * Na ) ) ;
13 Vms = -0.95;
14 Ci = epsiloni * epsilon0 / d ;
15 Vfb = Vms -( Qi / Ci ) ;
16 Qd = -q * Na * Wm ;
17 Vt = Vfb - Qd / Ci +2* Vf ;
18 Cd = epsilon * epsilon0 / Wm ;
19 Cmin = Ci * Cd /( Ci + Cd ) ;
20 disp ( Vf , ” Phi ( F ) ( i n eV )=” )
21 disp ( Wm *10^4 , ”W(m) ( i n m i c r o n )=” )

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22 disp ( Qi , ” e f f e c t i v e i n t e r f a c e c h a r g e ( i n coulomb p e r
s q u a r e cm )=” )
23 disp ( Ci *10^6 , ”C( i ) ( i n m i c r o f a r a d p e r s q u a r e cm )=” )
24 disp ( Vfb , ”V( f b ) ( i n V)=” )
25 disp ( Qd , ”Q( d ) ( i n coulomb p e r s q u a r e cm )=” )
26 disp ( Vt , ”V(T) ( i n V)=” )
27 disp ( Cd *10^6 , ”C( d ) ( i n m i c r o f a r a d p e r s q u a r e cm )=” )
28 disp ( Cmin , ”C( min ) ( i n f a r a d p e r s q u a r e cm )=” )

Scilab code Exa 6.2 drain current in mosfet

1 kT = 0.0259;
2 ni = 1.5*10^10;
3 q = 1.6*10^ -19;
4 q0 = 1;
5 epsilon0 = 8.85*10^ -14;
6 epsilon = 11.8;
7 epsiloni = 3.9;
8 Na = 5*10^15;
9 d = 10^ -6;
10 Vt = 0.6;
11 Z = 25*10^ -4;
12 L = 10^ -4;
13 Vg1 = 5;
14 Vd1 = 0.1;
15 Vg2 =3;
16 Vd2 =5;
17 Vdsat = Vg2 - Vt ;
18 Vd3 =7;
19 un = 200;
20 Ci = epsiloni * epsilon0 / d ;
21 Id1 = ( Z * un * Ci / L ) *(( Vg1 - Vt ) * Vd1 -0.5* Vd1 ^2) ; // l i n e a r
region
22 Id2 = ( Z * un * Ci / L ) *(( Vg2 - Vt ) * Vdsat -0.5* Vdsat ^2) ; //
saturation region

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23 disp ( Ci *10^6 , ”C( i ) ( i n m i c r o f a r a d p e r s q u a r e cm )=” )
24 disp ( Id1 *10^3 , ” For V(G) =5V and V(D) =0.1V, we a r e i n
t h e l i n e a r r e g i o n and d r a i n c u r r e n t ( i n
m i l i a m p e r e )=” )
25 disp ( Id2 *10^3 , ” For V(G) =3V and V(D) =5V, we a r e i n
t h e s a t u r a t i o n r e g i o n and d r a i n c u r r e n t ( i n
m i l i a m p e r e )=” )
26 disp ( ” For VD = 7 V, ID w i l l n o t i n c r e a s e , b e c a u s e we
are in the s a t u r a t i o n r e g i o n . ”)

Scilab code Exa 6.3 ion implantation

1 q = 1.6*10^ -19;
2 q0 = 1;
3 epsilon0 = 8.85*10^ -14;
4 epsilon = 11.8;
5 epsiloni = 3.9;
6 d = 10^ -6;
7 Vt1 = -1.1;
8 Vt2 = -0.5;
9 I = 10^ -5;
10 A = 650;
11 Ci = epsiloni * epsilon0 / d ;
12 Fb = ( Vt2 - Vt1 ) * Ci / q ;
13 t = Fb * q * A / I ;
14 disp ( Ci *10^6 , ”C( i ) ( i n m i c r o f a r a d p e r s q u a r e cm )=” )
15 disp ( Fb , ” b o r o n i o n d o s e r e q u i r e d ( i n p e r s q u a r e cm )=
”)
16 disp (t , ” i m p l a n t t i m e ( i n s e c o n d )=” )

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 Chapter 7

Bipolar Junction Transistor

Scilab code Exa 7.1 steady state charge in transistor

1 tp = 10^ -5;
2 ts = 10^ -7;
3 ib = 10^ -4;
4 ic = 10^ -2;
5 Qn = ic * ts ;
6 Qp = ib * tp ;
7 disp ( Qp , ” s t e a d y s t a t e c h a r g e due t o e x c e s s h o l e s ( i n
coulomb )=” )
8 disp ( Qn , ” s t e a d y s t a t e c h a r g e due t o e x c e s s e l e c t r o n s
( i n coulomb )=” )

Scilab code Exa 7.4 bjt saturation current

1 A =10^ -4;
2 q = 1.6*10^ -19;
3 kT = 0.0259;
4 Wb = 10^ -4;
5 ni = 1.5*10^10;

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 6 Na = 10^17;
7 Tn = 10^ -7;
8 upe =200;
9 une =700;
10 Nd = 10^15;
11 Tp =10^ -5;
12 unb =1300;
13 upb =450;
14 Veb = 0.3;
15 Vcb = -40;
16 pn = ni ^2/ Nd ;
17 Dp = upb * kT ;
18 Lp = sqrt ( Dp * Tp ) ;
19 Ies = q * A * Dp * pn / Lp *( csch ( Wb / Lp ) + tanh ( Wb / Lp ) ) ;
20 dpe = pn * exp ( Veb / kT ) ;
21 Ib = q * A * Dp * dpe / Lp * tanh ( Wb /2* Lp ) ;
22 Ib1 = q * A * Wb * dpe /(2* Tp ) ;
23 Dn = kT * une ;
24 Ln = sqrt ( Dn * Tn ) ;
25 gamma1 = (1+(( Dn * Lp * Nd ) /( Dp * Ln * Na ) ) * tanh ( Wb / Lp ) ) ^ -1;
26 B = sech ( Wb / Lp ) ;
27 alpha = B * gamma1 ;
28 beta1 = alpha /(1 - alpha ) ;
29 disp ( pn , ” h o l e c o n c e n t r a t i o n ( i n p e r c u b i c c e n t i m e t e r
)=” )
30 disp ( Dp , ”Dp ( i n s q a u r e c e n t i m e t e r p e r s e c o n d )=” )
31 disp ( Lp *10 , ”Lp ( i n m i c r o m e t e r ) =” )
32 disp ( dpe , ” dp (E) ( i n p e r c u b i c c e n t i m e t e r ) =” )
33 disp ( Ies , ” I ( ES ) ( i n ampere )=” )
34 disp ( Ib1 , ” I (B) ( i n ampere )=” )
35 disp ( Dn , ”Dn ( i n s q a u r e c e n t i m e t e r p e r s e c o n d )=” )
36 disp ( Ln *10 , ”Ln ( i n m i c r o m e t e r )=” )
37 disp ( gamma1 , ”gamma =” )
38 disp (B , ”B =” )
39 disp ( alpha , ” a l p h a =” )
40 disp ( beta1 , ” b e t a =” )

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 Chapter 8

Optoelectronic Devices

Scilab code Exa 8.2 solar cells

1 Isc =100;
2 Voc =0.8;
3 ff = 0.7;
4 Pmax = ff * Isc * Voc ;
5 disp ( Pmax , ”maximum power d e l i v e r e d ( i n m i l i w a t t )=” )

Scilab code Exa 8.3 fibre optic communication

1 wavelength = 0.68;
2 Eg = 1.24/ wavelength ;
3 disp ( Eg , ” band gap ( i n eV )=” )
4 disp ( ”From Fig , 3 −6 , we g e t Al ( 0 . 3 2 ) Ga ( 0 . 6 8 ) As . From
F i g . 8 −11 , we g e t GaAs ( 0 . 6 8 ) P ( 0 . 3 2 ) ” )

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