Preliminary – Subject to change without notice

MDD1903 – Single N-Channel Trench MOSFET 100V

MDD1903
Single N-channel Trench MOSFET 100V, 11A, 120mΩ

General Description Features

The MDD1903 uses advanced MagnaChip’s MOSFET  VDS = 100V
Technology, which provides high performance in on-state  ID = 11A @VGS = 10V
resistance, fast switching performance and excellent  RDS(ON)
quality. MDD1903 is suitable device for DC/DC < 120mΩ @VGS = 10V
Converters and general purpose applications. < 135mΩ @VGS = 6.0V

Absolute Maximum Ratings (Tc = 25oC)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 100 V
Gate-Source Voltage VGSS ±20 V
o
TC=25 C 11 A
Continuous Drain Current (1) o
ID
TC=100 C 7.3 A
Pulsed Drain Current IDM 30 A
o
TC=25 C 39
Power Dissipation o
PD W
TC=100 C 15
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics

Characteristics Symbol Rating Unit

Thermal Resistance, Junction-to-Ambient RθJA 52 o
(1)
C/W
Thermal Resistance, Junction-to-Case RθJC 3.2

Jan. 2011. Version 2.0 1 MagnaChip Semiconductor Ltd.

 Preliminary – Subject to change without notice

MDD1903 – Single N-Channel Trench MOSFET 100V

Ordering Information

Part Number Temp. Range Package Packing Rohs Status

MDD1903RH -55~150oC D-PAK Tape & Reel Halogen Free

Electrical Characteristics (Tc =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 100 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 2.0 3.0
Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1
μA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
VGS = 10V, ID = 10A - 120
Drain-Source ON Resistance RDS(ON) mΩ
VGS = 6.0V, ID = 10A - 135
Forward Transconductance gfs VDS = 10V, ID = 10A - 18 - S
Dynamic Characteristics
Total Gate Charge Qg - 11.7 20
VDS = 80V, ID = 10A,
Gate-Source Charge Qgs - 1.6 - nC
VGS = 10V
Gate-Drain Charge Qgd - 5.3 -
Input Capacitance Ciss - 525 830
VDS = 25V, VGS = 0V,
Reverse Transfer Capacitance Crss - 27 - pF
f = 1.0MHz
Output Capacitance Coss - 63 -
Turn-On Delay Time td(on) - 8.4
Rise Time tr VDS=50V, VGS=10V, - 11.6
ns
Turn-Off Delay Time td(off) RL=5Ω, RGEN=3.3Ω - 42.6
Fall Time tf - 16.6
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 10A, VGS = 0V - 0.7 1.2 V
Body Diode Reverse Recovery Time trr - 50 ns
IF = 10A, dl/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr - 77 nC

Note :

1. Surface mounted RF4 board with 2oz. Copper.

Jan. 2011. Version 2.0 2 MagnaChip Semiconductor Ltd.

 Preliminary – Subject to change without notice

MDD1903 – Single N-Channel Trench MOSFET 100V

Package Dimension

D-PAK (TO-252)
Dimensions are in millimeters, unless otherwise specified

Jan. 2011. Version 2.0 3 MagnaChip Semiconductor Ltd.

 Preliminary – Subject to change without notice

MDD1903 – Single N-Channel Trench MOSFET 100V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Jan. 2011. Version 2.0 4 MagnaChip Semiconductor Ltd.