VOLUME 18

ISSUE 1-2
of Achievements in Materials September–October
and Manufacturing Engineering 2006

Comparison of electrical characteristics

of silicon solar cells
L.A. Dobrzański*, L. Wosińska, B. Dołżańska, A. Drygała
Division of Materials Processing Technology and Computer Techniques
in Materials Science, Institute of Engineering Materials and Biomaterials,
Silesian University of Technology, ul. Konarskiego 18a, 44-100 Gliwice, Poland
* Corresponding author: E-mail address: [email protected]
Received 15.03.2006; accepted in revised form 30.04.2006

Properties

Abstract
Purpose: The aim of this work is comparison of the operational characteristics of photovoltaic silicon cells:
monocrystalline silicon, polycrystalline silicon and amorphous silicon.
Design/methodology/approach: The notion of fill factor (FF), which is characteristic for Photovoltaic quality,
has been introduced to compare properties of different silicon solar cells. Basing on the indicated characteristic
the analysis of cell power efficiency has been carried out and the maximum power points PMM have been
determined.
Findings: It has been pointed out that crystal structure and surface texture affect utility properties of the
investigated Photovoltaic Silicon Cells. Moreover, it has been stated that along with the radiation intensity growth
the maximum cell power increases accompanied by its efficiency deterioration and simultaneous change of the
maximum power point position, what causes and short-circuit current increase.
Research limitations/implications: It has been found that the cell surface texture has an important influence
on utility properties of the photovoltaic cells, which is connected with the high refractivity of silicon. Therefore,
development of the cell surface forming methods is of a significant influence on improvement of the photovoltaic
cells properties.
Practical implications: Currently the photovoltaic industry is based mostly on the crystalline and polycrystalline
silicon. Limitations of the utility properties resulting from the relationships presented in this paper accompany
the advantages of cells fabricated from the amorphous and polycrystalline silicon, like the low manufacturing
costs and no geometrical limitations. Analysis of the discussed relationships makes optimization of the cell
parameters possible, depending on the service requirements.
Originality/value: Known cells were compared as regards their conversion efficiency in various lighting
conditions, depending on their design and material properties.
Keywords: Electrical properties; Solar cells; Crystalline silicon; Amorphous

1. Introduction
1. Introduction The solar power belongs to the sources of renewable energies
which raises the greatest hope. This technology of power generation
has features of commercial energetics. The energy can be delivered to
Alternative energetics has all technical basis to become the the existing power distribution network in a small or large scale. The
supplement of classic methods of power generation and to be range of scale refers to some watt or kilowatt domestic power
competitive for them. At present the ecological reasons seem to generator as well as the commercial photovoltaic power station.
be decisive in the strategy of development of world power The conversion of solar radiation energy into electrical energy
generation industry [1-3]. in photovoltaic cells is direct without any additional equipment and

© Copyright by International OCSCO World Press. All rights reserved. 2006 Short paper 215
 Journal of Achievements in Materials and Manufacturing Engineering Volume 18 Issue 1-2 September–October 2006

without natural environment pollution. Photovoltaic cells are where:

manufactured of various materials of monocrystalline, UM– maximum voltage [V],
polycrystalline or amorphous structure. Which structure and IM – maximum current [A],
material are to be chosen depends on compromise between costs E – intensity of radiation [W/m2],
and efficiency of photoelectric transformation [4- 11]. S – area of the cell [m2].
Generally, it can be stated that the greater the energy efficiency Fill factor of current – voltage characteristic of solar cells can
of cell is, the higher production costs are. To decrease production be calculated from:
costs and improve efficiency of solar cells new semiconductive
materials are searched. F = UM·IM/UOC·ISC (2)
The basic parameter of solar cell quality having direct influence
on its lifetime is its efficiency. The main factors determining the where:
conversion efficiency are the following: the kind of semi- UOC– open circuit voltage [V],
conductive material (the width of band gap Eg), the incompatibility ISC – short circuit current [A].
of solar radiation with the cell absorption, spectrum sensitivity of
photoelement and the construction of a cell [3-8].
Efficiency improvement is possible mainly by means of the
increase of fill factor coefficient FF of photoelement by more
advanced technology, a decrease of reflection by the application of
antireflection layers, choice of more suitable semiconductor,
decrease in temperature of absorbing surface, the use of
concentrated solar radiation [14].
The aim of this work is the comparison of operating
characteristics of monocrystalline, polycrystalline and amorphous
silicon solar cells [13].

2. Methodology
2. 
Methodology
Three kinds of photovoltaic cells (monocrystalline,
polycrystalline, amorphous) were investigated (Table 1). The cells
came from production line.
Fig. 1. Test stand
Table 1
Characteristics of investigated photovoltaic cells
Antireflection Total area of
Type of cell
layer the cell, cm2 3. Discussion
3. 
Discussion
Monocrystalline transparent 65
Monocrystalline mirror 52 To compare the obtained results of measurements of the
Polycrystalline transparent 156 investigated cells for different values of the radiation intensity, the
Amorphous transparent 146 current – voltage characteristic, the power characteristic and the
point of maximum power were presented (Fig. 2).
For the monocrystalline cell with transparent layer the
Characteristics were determined with the use of the test stand
increase of radiation intensity causes the increase of voltage.
presented in Figure 1. The test stand consisted of the following
The highest voltage U = 0.55 V for I = 0.07 A/m2 is obtained for
elements:
the radiation intensity E = 130000 lx (sunlight). However if the
x Lighting – halogen lamp (150W and 500W) of adjustable
cell is illuminated by the halogen lamp of 500 W power and the
intensity of light,
radiation intensity E = 50000 lx then the voltage of the cell
x Luxmeter, type LX – 103, drops to U = 0.524 V for I = 0.06 A/m2 (Fig.2a).
x Decade resistor R in the range from 0.5 to 1000 ȍ, For the monocrystalline cell with antireflective mirror layer
x Ammeter (A), type DT890G, the highest voltage U = 0.53 V for I = 0.09 A/m2 is obtained for
x Voltmeter (V), type VM 30 D. the radiation intensity E = 130000 lx. However if the cell is
illuminated by the halogen lamp of 500 W power and the
Measurements were carried out for specific intensity of radiation intensity E = 50000 lx then the voltage of the cell
radiation E = 50000 lx (73.21 W/m2) for halogen lamp and decreases to U = 0.5 V for I = 0.09 A/m2 (Fig.2b).
E = 130000 lx (190.33 W/m2) for the natural solar lighting. For the polycrystalline cell the highest voltage U = 0.541 V for
Efficiency of the tested cells was calculated on the basis of the I = 0.032 A/m2 is obtained for the radiation intensity E = 130000 lx.
following relation: However if the cell is illuminated by the halogen lamp of 500 W
power and the radiation intensity E = 50000 lx then the voltage of the
Ș = (UM·IM/E·S)·100% (1) cell decreases to U = 0.497 V for I = 0.03 A/m2 (Fig. 2c).

216 Short paper L.A. Dobrzański, L. Wosińska, B. Dołżańska, A. Drygała

 Properties

U-I, 130000 lx b) U-I, 130000 lx

a) 0.25 0.25
U-P, 130000 lx U-P, 130000 lx
PPM, 130000 lx PPM, 130000 lx
PMM PMM PMM PMM
0.2 U-I, 50000 lx U-I, 50000 lx
0.2
U-P, 50000 lx U-P, 50000 lx
PPM, 50000 lx PPM, 50000 lx
0.15 0.15
I[A] I[A]
P[W] P[W]
0.1 0.1

0.05 0.05

0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6
U[V] U[V]

c) 0.25 U-I, 130000 lx d) 0.04

U-I, 130000 lx
U-P, 130000 lx U-P, 130000 lx
PPM, 130000 lx 0.035 PPM, 130000 lx
PMM PMM
U-I, 50000 lx U-I, 50000 lx
0.2 PMM
U-P, 50000 lx 0.03 PMM U-P, 50000 lx
PPM, 50000 lx PPM, 50000 lx
0.025
0.15
I[A]
I[A] 0.02
P[W]
P[W]
0.1 0.015

0.01
0.05
0.005

0
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0 0.1 0.2 0.3 0.4 0.5 0.6
U[V]
U[V]

Fig. 2. The comparison of I(U) characteristics, P(U) characteristics and delimitation the points of the maximum power of studied
photovoltaic cells: a) monocrystalline silicon solar cell with transparent layer, b) monocrystalline silicon solar cell with mirror layer,
c) polycrystalline, d) amorphous

In order to present I(U) characteristics for the studied construction of the cells, type of antireflection layer and applied
amorphous module it was necessary to calculate voltage and technology [8, 9].
current for the individual cell. Also for this cell, the decrease of The obtained current – voltage characteristics and the point of
voltage is caused by the decrease of radiation intensity. The highest maximum power allowed to calculate the efficiency Ș and fill factor
voltage U = 0.666 V for I = 8.51 A/m2 is obtained for the radiation FF of the investigated cells (Table 2). On the basis of the obtained
intensity E = 130000 lx. However if the cell is illuminated by the operational characteristics it can be stated that the decrease of
halogen lamp of 500 W power and the radiation intensity illumination causes the increase of the efficiency (for
E = 50000 lx then the voltage of the cell decreases to U = 0.576 V for monocrystalline and polycrystalline cells). For the amorphous cell
I = 6.629 A/m2 (Fig. 2d). the decrease of illumination causes the decrease of the efficiency.
For all the investigated cells it can be observed that the increase Efficiencies of the investigated cells for the following parameters
of the radiation intensity causes the increase of the short-circuit E = 130000 lx and E = 50000 lx are presented in Figure 3.
current that conditions the increase of the power and changes of the
point of maximum power in the current – voltage characteristic.
The conducted investigations of operational characteristics of the
photovoltaic cells allowed to compare their conversion efficiency in
4. Summary
4. Summary
different conditions of lighting according to the construction and the On the basis of the performed investigations it can be stated
cells material. The results of investigations showed that in natural that the studied photovoltaic cells allow to convert light radiation
conditions the maximum values of current and voltage were higher into electrical energy in the efficiency range 9 - 22% according to
than for artificial lighting. the construction of the cell and light intensity. Increase of the
The results of monocrystalline and polycrystalline cells are radiation intensity causes the increase of the cell power from the
comparable. The maximum voltage in both cases is equal to 0.53 V, one hand and decrease of the efficiency and change of the point of
however for the amorphous module the voltage is higher and is maximum power accompanied by the increase of the cell voltage
equal to 0.6 V. Differences in these results are caused by the and short-circuit current from the other hand.

Comparison of electrical characteristics of silicon solar cells 217

 Journal of Achievements in Materials and Manufacturing Engineering Volume 18 Issue 1-2 September–October 2006

Table 2.
The account of calculations: efficiency, fill factor, power maximum of photovoltaic cells
Solar Cell Intensity of radiation [lx] Efficiency [%] Maximum Power [W/m2] Fill Factor (FF)
monocrystalline silicon solar cell 130000 8 15.32 0.86
with transparent layer 50000 18 13.57 0.80
monocrystalline silicon solar cell 130000 9 17.90 0.84
with mirror layer 50000 22 16.74 0.83
130000 3 6.29 0.89
polycrystalline silicon solar cell
50000 9 5.84 0.87
130000 14.5 14.12 0.66
amorphous silicon solar cell
50000 8 10.68 0.63

Acknowledgements
Acknowledgements
This work has been supported by Polish Ministry of
Science and Information Technology in frame of the Project
No. 3 T08C 048 29.

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