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1N4001-1N4007 Silicon Rectifier Specs

The document provides technical specifications for silicon rectifier diodes rated from 50-1000V and 1.0A made by Chongqing Pingyang Electronics Co., Ltd. Key specifications include maximum voltage and current ratings, forward voltage drop, mechanical dimensions, and thermal and electrical characteristics. The diodes feature high reliability, low leakage and forward voltage, and high current capability in a molded plastic case.

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Sergio Chuquimia Valdez
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94 views1 page

1N4001-1N4007 Silicon Rectifier Specs

The document provides technical specifications for silicon rectifier diodes rated from 50-1000V and 1.0A made by Chongqing Pingyang Electronics Co., Ltd. Key specifications include maximum voltage and current ratings, forward voltage drop, mechanical dimensions, and thermal and electrical characteristics. The diodes feature high reliability, low leakage and forward voltage, and high current capability in a molded plastic case.

Uploaded by

Sergio Chuquimia Valdez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

CHONGQING PINGYANG ELECTRONICS CO.,LTD.

1N4001 THRU 1N4007


TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE：50-1000V CURRENT：1.0A

FEATURES DO-41
·High reliability
·Low leakage
·Low forward voltage drop
·High current capability 1.0(25.4) .034(0.9)
MIN. .028(0.7)
DIA.

.205(5.2)
.166(4.2) .107(2.7)
.080(2.0)
DIA.
MECHANICAL DATA
·Case: Molded plastic 1.0(25.4)
·Epoxy: UL94V-0 rate flame retardant MIN.
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color band denotes cathode end
·Mounting position: Any Dimensions in inches and (millimeters)
·Weight: 0.33 grams

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS


Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 units
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward rectified Current
Io 1.0 A
at TA=75°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC IFSM 30 A
method)
Maximum Instantaneous forward Voltage at 1.0A VF 1.1 V
DC
Maximum DC Reverse Current @ TA=25°C 5.0
at Rated DC Blocking Voltage @ TA=100°C 500
IR µA
Maximum Full Load Reverse Current Average
30
Full Cycle .375”(9.5mm) lead length at TL=75°C
Typical Junction Capacitance (Note) CJ 15 pF
Typical Thermal Resistance RθJA 50 °C/W
Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts

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