ILD615, ILQ615

Vishay Semiconductors

Optocoupler, Phototransistor Output (Dual, Quad Channel)

FEATURES
• Identical channel to channel footprint
A 1 8 C
Dual Channel • Dual and quad packages feature:
C 2 7 E - Reduced board space
- Lower pin and parts count
A 3 6 C - Better channel to channel CTR match
- Improved common mode rejection
C 4 5 E
• Isolation test voltage from double molded
package, 5300 VRMS
Quad Channel A 1 16 C • Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
C 2 15 E

A 3 14 C AGENCY APPROVALS
C 4 13 E • UL1577, file no. E52744 system code H, double protection
A 5 12 C • CSA 93751
i179012-1

C
• BSI IEC 60950; IEC 60065
6 11 E
• DIN EN 60747-5-2 (VDE0884)/DIN EN 60747-5-5 pending,
A 7 10 C
available with option 1
C 8 9 E
i179052-2
V
D E

DESCRIPTION
The ILD615, ILQ615 are multi-channel phototransistor
optocouplers that use GaAs IRLED emitters and high gain
NPN phototransistors. These devices are constructed using
over/under leadframe optical coupling and double molded
insulation technology resulting a withstand test voltage of
7500 VACPEAK and a working voltage of 1700 VRMS.
The binned min./max. and linear CTR characteristics make
these devices well suited for DC or AC voltage detection.
Eliminating the phototransistor base connection provides
added electrical noise immunity from the transients found in
many industrial control environments.
Because of guaranteed maximum non-saturated and
saturated switching characteristics, the ILD615, ILQ615 can
be used in medium speed data I/O and control systems. The
binned min./max. CTR specification allow easy worst case
interface calculations for both level detection and switching
applications. Interfacing with a CMOS logic is enhanced by
the guaranteed CTR at IF = 1 mA.

Document Number: 83652 For technical questions, contact: [email protected] www.vishay.com

Rev. 1.6, 04-Mar-11 1
ILD615, ILQ615
Vishay Semiconductors Optocoupler, Phototransistor Output
(Dual, Quad Channel)

ORDERING INFORMATION
DIP Option 6
I L x 6 1 5 - # X 0 # # T

PART NUMBER CTR PACKAGE OPTION TAPE 10.16 mm

7.62 mm
BIN AND
x = D (Dual) or Q (Quad) REEL Option 7 Option 9

> 0.7 mm > 0.1 mm

DUAL CHANNEL QUAD CHANNEL

AGENCY
CTR (%)
CERTIFIED/PACKAGE
10 mA
UL, CSA, BSI, VDE 40 to 80 63 to 125 100 to 200 160 to 320 40 to 80 63 to 125 100 to 200 160 to 320
DIP-8 ILD615-1 ILD615-2 ILD615-3 ILD615-4 - - - -
DIP-8, 400 mil, option 6 - - - ILD615-4X006 - - - -
SMD-8, option 7 ILD615-1X007T - - - - - - -
SMD-8, option 9 ILD615-1X009 ILD615-2X009T(1) ILD615-3X009T ILD615-4X009T(1) - - - -
DIP-16 - - - - ILQ615-1 ILQ615-2 ILQ615-3 ILQ615-4
SMD-16, option 7 - - - - - ILQ615-2X007 ILQ615-3X007T(1) ILQ615-4X007
SMD-16, option 9 - - - - ILQ615-1X009 - ILQ615-3X009T(1) ILQ615-4X009T(1)
VDE 40 to 80 63 to 125 100 to 200 160 to 320 40 to 80 63 to 125 100 to 200 160 to 320
DIP-8 - ILD615-2X001 - ILD615-4X001 - - - -
DIP-8, 400 mil, option 6 - ILD615-2X016 ILD615-3X016 ILD615-4X016 - - - -
SMD-8, option 7 - - ILD615-3X017T(1) - - - - -
DIP-16 - - - - - - ILQ615-3X001 ILQ615-4X001
DIP-16, 400 mil, option 6 - - - - - - ILQ615-3X016 -
SMD-16, option 7 - - - - - ILQ615-2X017 - -
Notes
• Also available in tubes; do not add T to end.
• Additional options may be possible, please contact sales office.

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR 6 V
Forward current IF 60 mA
Surge current IFSM 1.5 A
Power dissipation Pdiss 100 mW
Derate linearly from 25 °C 1.33 mW/°C
OUTPUT
Collector emitter breakdown voltage BVCEO 70 V
Emitter collector breakdown voltage BVECO 7 V
IC 50 mA
Collector current
t < 1 ms IC 100 mA
Power dissipation Pdiss 150 mW
Derate linearly from 25 °C 2 mW/°C

www.vishay.com For technical questions, contact: [email protected] Document Number: 83652

2 Rev. 1.6, 04-Mar-11
 ILD615, ILQ615
Optocoupler, Phototransistor Output Vishay Semiconductors
(Dual, Quad Channel)

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
COUPLER
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Junction temperature Tj 100 °C
Soldering temperature (1) 2 mm distance from case bottom Tsld 260 °C
Package power dissipation ILD615 400 mW
Derate linearly from 25 °C 5.33 mW/°C
Package power dissipation ILQ615 500 mW
Derate linearly from 25 °C 6.67 mW/°C
Isolation test voltage t=1s VISO 5300 VRMS
Isolation voltage VIORM 890 VP
Total power dissipation Ptot 250 mW
Creepage distance 7 mm
Clearance distance 7 mm
VIO = 500 V, Tamb = 25 °C RIO  1012 
Isolation resistance
VIO = 500 V, Tamb = 100 °C RIO  1011 
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).

ELECTRICAL CHARACTERISTCS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 10 mA VF 1 1.15 1.3 V
Breakdown voltage IR = 10 μA VBR 6 30 V
Reverse current VR = 6 V IR 0.01 10 μA
Capacitance VR = 0 V, f = 1 MHz CO 25 pF
Thermal resistance, junction to lead RTHJL 750 K/W
OUTPUT
Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 6.8 pF
Collector emitter leakage current, -1, -2 VCE = 10 V ICEO 2 50 nA
Collector emitter leakage current, -3, -4 VCE = 10 V ICEO 5 100 nA
Collector emitter breakdown voltage ICE = 0.5 mA BVCEO 70 V
Emitter collector breakdown voltage IE = 0.1 mA BVECO 7 V
Thermal resistance, junction to lead RTHJL 500 K/W
PACKAGE TRANSFER CHARACTERISTICS
Channel/channel CTR match IF = 10 mA, VCE = 5 V CTRX/CTRY 1 to 1 2 to 1
COUPLER
Capacitance (input to output) VIO = 0 V, f = 1 MHz CIO 0.8 pF
Insulation resistance VIO = 500 V, TA = 25 °C RS 1012 1014 
Channel to channel isolation 500 VAC

Note
• Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.

Document Number: 83652 For technical questions, contact: [email protected] www.vishay.com

Rev. 1.6, 04-Mar-11 3
ILD615, ILQ615
Vishay Semiconductors Optocoupler, Phototransistor Output
(Dual, Quad Channel)

CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
ILD615-1
CTRCEsat 25 %
ILQ615-1
ILD615-2
CTRCEsat 40 %
Current transfer ratio ILQ615-2
IF = 10 mA, VCE = 0.4 V
(collector emitter saturated) ILD615-3
CTRCEsat 60 %
ILQ615-3
ILD615-4
CTRCEsat 100 %
ILQ615-4
ILD615-1
CTRCE 13 30 %
ILQ615-1
ILD615-2
CTRCE 22 45 %
ILQ615-2
IF = 1 mA, VCE = 5 V
ILD615-3
CTRCE 34 70 %
ILQ615-3
ILD615-4
CTRCE 56 90 %
Current transfer ratio ILQ615-4
(collector emitter) ILD615-1
CTRCE 40 60 80 %
ILQ615-1
ILD615-2
CTRCE 63 80 125 %
ILQ615-2
IF = 10 mA, VCE = 5 V
ILD615-3
CTRCE 100 150 200 %
ILQ615-3
ILD615-4
CTRCE 160 200 320 %
ILQ615-4

SAFETY AND INSULATION RATED PARAMETERS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
100 %, ttest = 1 s Vpd 1.669 kV
routine test
Partial discharge test voltage - tTr = 60 s, ttest = 10 s, VIOTM 10 kV
lot test (sample test) (see figure 2) Vpd 1.424 kV
VIO = 500 V RIO 1012 
VIO = 500 V, Tamb = 100 °C RIO 1011 
Insulation resistance
VIO = 500 V, Tamb  175 °C
RIO 109 
(construction test only)
Forward current ISI 275 mA
Power dissipation PSO 400 mW
Rated impulse voltage VIOTM 10 kV
Safety temperature TSI 175 °C
Note
• According to DIN EN 60747-5-2 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

www.vishay.com For technical questions, contact: [email protected] Document Number: 83652

4 Rev. 1.6, 04-Mar-11
 ILD615, ILQ615
Optocoupler, Phototransistor Output Vishay Semiconductors
(Dual, Quad Channel)

VIOTM
450
t1, t2 = 1 to 10 s
400
Phototransistor t3 , t4 =1s
350 PSO (mW) ttest = 10 s
300 tstres = 12 s
VPd
250
200 VIOWM
VIORM
150 IR-Diode
ISI (mA)
100
50
0
0 t3 ttest t4
0 25 50 75 100 125 150 175 t1 tTr = 60 s t2 t stres
13930
Tamb - Ambient Temperature (°C) t

Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-5-2 (VDE0884); IEC60747-5-5

SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
NON-SATURATED
Current VCC = 5 V, RL = 75 , 50 % of VPP IF 10 mA
Turn-on time VCC = 5 V, RL = 75 , 50 % of VPP ton 3 μs
Rise time VCC = 5 V, RL = 75 , 50 % of VPP tr 2 μs
Turn-off time VCC = 5 V, RL = 75 , 50 % of VPP toff 2.3 μs
Fall time VCC = 5 V, RL = 75 , 50 % of VPP tf 2 μs
Propagation H to L VCC = 5 V, RL = 75 , 50 % of VPP tPHL 1.1 μs
Propagation L to H VCC = 5 V, RL = 75 , 50 % of VPP tPLH 2.5 μs
SATURATED
ILD615-1
IF 20 mA
ILQ615-1
ILD615-2
IF 10 mA
VCC = 5 V, RL = 1 k, ILQ615-2
Current
VTH = 1.5 V ILD615-3
IF 10 mA
ILQ615-3
ILD615-4
IF 5 mA
ILQ615-4
ILD615-1
ton 3 μs
ILQ615-1
ILD615-2
ton 4.3 μs
VCC = 5 V, RL = 1 k, ILQ615-2
Turn-on time
VTH = 1.5 V ILD615-3
ton 4.3 μs
ILQ615-3
ILD615-4
ton 6 μs
ILQ615-4

Document Number: 83652 For technical questions, contact: [email protected] www.vishay.com

Rev. 1.6, 04-Mar-11 5
ILD615, ILQ615
Vishay Semiconductors Optocoupler, Phototransistor Output
(Dual, Quad Channel)

SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
SATURATED
ILD615-1
tr 2 μs
ILQ1615-1
ILD615-2
tr 2.8 μs
VCC = 5 V, RL = 1 k, ILQ615-2
Rise time
VTH = 1.5 V ILD615-3
tr 2.8 μs
ILQ615-3
ILD615-4
tr 4.6 μs
ILQ615-4
ILD615-1
toff 18 μs
ILQ615-1
ILD615-2
toff 25 μs
VCC = 5 V, RL = 1 k, ILQ615-2
Turn-off time
VTH = 1.5 V ILD615-3
toff 25 μs
ILQ615-3
ILD615-4
toff 25 μs
ILQ615-4
ILD615-1
tf 11 μs
ILQ615-1
ILD615-2
tf 14 μs
VCC = 5 V, RL = 1 k, ILQ615-2
Fall time
VTH = 1.5 V ILD615-3
tf 14 μs
ILQ615-3
ILD615-4
tf 15 μs
ILQ615-4
ILD615-1
tPHL 1.6 μs
ILQ615-1
ILD615-2
tPHL 2.6 μs
VCC = 5 V, RL = 1 k, ILQ615-2
Propagation H to L
VTH = 1.5 V ILD615-3
tPHL 2.6 μs
ILQ615-3
ILD615-4
tPHL 5.4 μs
ILQ615-4
ILD615-1
tPLH 8.6 μs
ILQ615-1
ILD615-2
tPLH 7.2 μs
VCC = 5 V, RL = 1 k, ILQ615-2
Propagation L to H
VTH = 1.5 V ILD615-3
tPLH 7.2 μs
ILQ615-3
ILD615-4
tPLH 7.4 μs
ILQ615-4

COMMON MODE TRANSIENT IMMUNITY (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Common mode rejection output high VCM = 50 VP-P, RL = 1 k, IF = 0 mA CMH 5000 V/μs
Common mode rejection output low VCM = 50 VP-P, RL = 1 k, IF = 0 mA CML 5000 V/μs
Common mode coupling capacitance CCM 0.01 pF

www.vishay.com For technical questions, contact: [email protected] Document Number: 83652

6 Rev. 1.6, 04-Mar-11
 ILD615, ILQ615
Optocoupler, Phototransistor Output Vishay Semiconductors
(Dual, Quad Channel)

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

IF
VCC = 5 V

I F = 10 mA
tD
VO tR
VO
t PLH
f = 10 kHz, RL = 75 Ω
DF = 50 %
V TH = 1.5 V

t PHL tS tF
iild615_04
iild615_01

Fig. 3 - Non-Saturated Switching Timing Fig. 6 - Saturated Switching Timing

200

f = 10 kHz, VCC = 5 V
DF = 50 % PLED - LED Power (mW) 150

RL
100
VO

50

0
iild615_02
- 60 - 40 - 20 0 20 40 60 80 100
Tamb - Ambient Temperature (°C)

Fig. 4 - Saturated Switching Timing Fig. 7 - Maximum LED Power Dissipation

IF

1.4

1.3
Tamb = - 55 °C
VF - Forward Voltage (V)

1.2
t PLH Tamb = 25 °C
1.1
t PLH
VO
1.0
tS
50 %
0.9 Tamb = 85 °C

0.8
tF
tD tR 0.7
0.1 1 10 100
iild615_03 t on t off IF - Forward Current (mA)
iild615_07

Fig. 5 - Non-Saturated Switching Timing Fig. 8 - Forward Voltage vs. Forward Current

Document Number: 83652 For technical questions, contact: [email protected] www.vishay.com

Rev. 1.6, 04-Mar-11 7
ILD615, ILQ615
Vishay Semiconductors Optocoupler, Phototransistor Output
(Dual, Quad Channel)

10 000 2.0
τ

CTRNF - Normalized CTR Factor

Normalized to:
Duty Factor
Vce = 10 V, IF = 5 mA,
If(pk) - Peak LED Current (mA)

0.005 1.5 CTRce(sat) Vce = 0.4 V

0.01 t
1000
0.02
0.05 NCTRce
0.1 DF =τ /t 1.0
0.2
100 0.5 NCTRce(sat)
0.5

TA = 25 °C
10 0.0
10-6 10-5 10-4 10-3 10-2 10-1 100 101 0.1 1 10 100
iild615_08 t - LED Pulse Duration (s) iild615_11 IF - LED Current (mA)

Fig. 9 - Peak LED Current vs. Pulse Duration,  Fig. 12 - Normalization Factor
for Non-Saturated and Saturated CTR vs. IF

200 2.0
Normalized to:
CTRNF - Normalized CTR Factor
VCE = 10 V, IF = 5 mA
PDET - Detector Power (mW)

150 1.5 CTRce(sat) VCE = 0.4 V

NCTRce
100 1.0

NCTRce(sat)
50 0.5
TA = 50 °C

0 0.0
- 60 - 40 - 20 0 20 40 60 80 100 0.1 1 10 100
Tamb - Ambient Temperature (°C) iild615_12 IF - LED Current (mA)
iild615_09

Fig. 10 - Maximum Detector Power Dissipation Fig. 13 - Normalization Factor

for Non-Saturated and Saturated CTR vs. IF

1000 2.0
Normalized to:
CTRNF - Normalized CTR Factor

VCE = 10 V, IF = 5 mA
I CE - Collector Current (mA)

Rth = 500 °C/W

100 1.5 CTRce(sat) VCE = 0.4 V

NCTRce
10 1.0
25 °C
50 °C
75 °C NCTRce(sat)
1 0.5
90 °C
TA = 70 °C

0.1 0.0
0.1 10 100 0.1 1 10 100
1
iild615_10 VCE - Collector Emitter Voltage (V) iild615_13 IF - LED Current (mA)

Fig. 11 - Maximum Collector Current vs. Collector Voltage Fig. 14 - Normalization Factor
for Non-Saturated and Saturated CTR vs. IF

www.vishay.com For technical questions, contact: [email protected] Document Number: 83652

8 Rev. 1.6, 04-Mar-11
 ILD615, ILQ615
Optocoupler, Phototransistor Output Vishay Semiconductors
(Dual, Quad Channel)

2.0 1000 4.0

Normalized to:

tpLH - Propagation Low-High (µs)

CTRNF - Normalized CTR Factor

tpHL - Propagation High-Low (µs)

IF = 10 mA
VCE = 10 V, IF = 5 mA VCC = 5 V, Vth = 1.5 V 3.5
1.5 CTRce(sat) VCE = 0.4 V
100 3.0

1.0 tpLH
2.5
NCTRce
10 2.0
0.5 tpHL
NCTRce(sat) 1.5
TA = 100 °C
0.0 1 1.0
0.1 1 10 100 0.1 1 10 100
iild615_14 IF - LED Current (mA) iild615_17
RL - Load Resistor (kΩ)

Fig. 15 - Normalization Factor Fig. 18 - -1, Propagation Delay vs. Collector Load Resistor
for Non-Saturated and Saturated CTR vs. IF

1000 2.5
35 IF = 10 mA

tpHL - Propagation High-Low (µs)

t pLH - Propagation Low-High(µs)
30 VCC = 5 V, Vth = 1.5 V
ICE - Collector Current (mA)

25 50 °C 100 2.0
20 tpLH

15 70 °C
25 °C
85 °C
10 10 1.5
tpHL

5
0 1.0
1
0 10 20 30 40 50 60 0.1 1 10 100
iild615_15 IF - LED Current (mA) iild615_18
RL - Collector Load Resistor (kΩ)

Fig. 16 - Collector Emitter Current vs. Fig. 19 - -2, -3, Propagation Delay vs. Collector Load Resistor
Temperature and LED Current

105 1000 2.5

IF = 10 mA
104
tpLH - Propagation Low - High (µs)

tpHL - Propagation Low - High (μs)

VCC = 5 V, Vth = 1.5 V

ICEO - Collector Emittet (nA)

103
100 2.0
102
Vce = 10 V tpLH
101
Typical 10 1.5
100
tpHL
10- 1

10- 2 1 1.0
- 20 0 20 40 60 80 100 0.1 1 10 100
iild615_16 Tamb- Ambient Temperature (°C) iild615_19 RL - Collector Load Resistor (kΩ)

Fig. 17 - Collector Emitter Leakage vs. Temperature Fig. 20 - -4, Propagation Delay vs. Collector Load Resistor

Document Number: 83652 For technical questions, contact: [email protected] www.vishay.com

Rev. 1.6, 04-Mar-11 9
ILD615, ILQ615
Vishay Semiconductors Optocoupler, Phototransistor Output
(Dual, Quad Channel)

PACKAGE DIMENSIONS in millimeters

Pin one ID

4 3 2 1

6.645 ± 0.165

5 6 7 8
ISO method A

9.77 ± 0.14

0.95 ± 0.19
7.62 typ.
0.79
4° typ.

3.555 ± 0.255

6.095 ± 0.255
1.27 10°
0.70 ± 0.19 3.045 ± 0.255
3° to 9°
0.51 ± 0.05

2.54 typ.
i178006
0.25 ± 0.05

Pin one ID

8 7 6 5 4 3 2 1

6.48
6.81

9 10 11 12 13 14 15 16 ISO method A

19.77
20.07

0.76 0.79 7.62 typ.

1.14

3.30
3.81

5.84
10°
4° 2.79 6.35
typ.
0.51 3.30
0.89
0.46
0.56 3° to 9°
2.54 typ. 1.27 0.20
0.30

i178007

www.vishay.com For technical questions, contact: [email protected] Document Number: 83652

10 Rev. 1.6, 04-Mar-11
 ILD615, ILQ615
Optocoupler, Phototransistor Output Vishay Semiconductors
(Dual, Quad Channel)

Option 6 Option 7 Option 9

7.62 typ. 7.62 typ. 10.3 max.

7.62 typ.

3.5 ± 0.3 0.7 min. 0.1 ± 0.1 3.6 ± 0.3

4.3 ± 0.3
0.1 min.
2.55 ± 0.25 8 min. 0.6 min.

10.3 max. 0.6 min. 8 min.

10.16 typ.

0.76 0.76
20802-22
R 0.25 R 0.25
2.54 2.54
1.78 1.78

8 min. 1.52 8 min. 1.52

11.05 11.05

0.76 0.76

R 0.25 R 0.25
2.54 2.54
1.78 1.78

8 min. 1.52 8 min. 1.52

11.05 11.05

PACKAGE MARKING

ILD615

V YWW H 68
21764-88

Notes
• Only options 1 and 7 reflected in the package marking.
• The VDE Logo is only marked on option1 parts.
• Tape and reel suffix (T) is not part of the package marking.

Document Number: 83652 For technical questions, contact: [email protected] www.vishay.com

Rev. 1.6, 04-Mar-11 11
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Revision: 01-Jan-2019 1 Document Number: 91000