Plastic-Encapsulate Mosfets

P-Channel Enhancement Mode Power MOSFET

DESCRIPTION 9435
The 9435 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.

GENERAL FEATURES
● VDS = -30V,ID = -5.1A
RDS(ON) < 105mΩ @ VGS=-4.5V
RDS(ON) < 55mΩ @ VGS=-10V SOP-8 top view

● High Power and current handing capability

● Lead free product is acquired
● Surface Mount Package D

Application G

●PWM applications
●Load switch S
●Power management
pin Assignment Schematic diagram

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID -5.1 A
Drain Current-Pulsed (Note 1) IDM -20 A
Maximum Power Dissipation PD 2 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃

Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 50 ℃/W

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 -33 - V

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9435
Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - - -1 μA
Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 -1.6 -3 V
VGS=-10V, ID=-5.1A - 48 55 mΩ
Drain-Source On-State Resistance RDS(ON)
VGS=-4.5V, ID=-4.2A - 73 105 mΩ
Forward Transconductance gFS VDS=-15V,ID=-4.5A 4 7 - S
Dynamic Characteristics (Note4)
Input Capacitance Clss - 1040 - PF
VDS=-15V,VGS=0V,
Output Capacitance Coss - 420 - PF
F=1.0MHz
Reverse Transfer Capacitance Crss - 150 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) - 15 - nS
Turn-on Rise Time tr VDD=-15V, ID=-1A, - 13 - nS
Turn-Off Delay Time td(off) VGS=-10V,RGEN=6Ω - 58 - nS
Turn-Off Fall Time tf 21 - nS
Total Gate Charge Qg - 12 - nC
Gate-Source Charge Qgs VDS=-15V,ID=-5.1A,VGS=-10V - 2.2 - nC
Gate-Drain Charge Qgd - 3 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1.7A - - -1.2 V

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production

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9435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton toff
tr tf
td(on) td(off)

90% 90%

VOUT INVERTED
10% 10%

90%
VIN 50% 50%

10%
PULSE WIDTH

Figure 1:Switching Test Circuit Figure 2:Switching Waveforms

ID- Drain Current (A）
PD Power(W)

TJ-Junction Temperature(℃) TJ-Junction Temperature(℃)

Figure 3 Power Dissipation Figure 4 Drain Current
Rdson On-Resistance(mΩ)
ID- Drain Current (A)

Vds Drain-Source Voltage (V) ID- Drain Current (A)

Figure 5 Output CHARACTERISTICS Figure 6 Drain-Source On-Resistance

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9435

Normalized On-Resistance
ID- Drain Current (A)

Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃)

Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance
Rdson On-Resistance(mΩ)

C Capacitance (pF)

Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V)

Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)

Qg Gate Charge (nC) Vsd Source-Drain Voltage (V)

Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward

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ID- Drain Current (A)

Vds Drain-Source Voltage (V)

Figure 13 Safe Operation Area
Transient Thermal Impedance
r(t),Normalized Effective

Square Wave Pluse Duration(sec)

Figure 14 Normalized Maximum Transient Thermal Impedance

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