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2SA1306 - Silicon PNP Power Transistor

This document provides product specifications for INCHANGE Semiconductor's isc Silicon PNP Power Transistors models 2SA1306/A/B. The transistors have good hFE linearity, high collector-emitter breakdown voltages ranging from -160V to -200V depending on the model, and are intended for use in power amplifier and driver stage amplifier applications. The document lists maximum ratings and typical electrical characteristics including collector-emitter breakdown voltage, saturation voltage, gain, cutoff currents, and more.

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105 views2 pages

2SA1306 - Silicon PNP Power Transistor

This document provides product specifications for INCHANGE Semiconductor's isc Silicon PNP Power Transistors models 2SA1306/A/B. The transistors have good hFE linearity, high collector-emitter breakdown voltages ranging from -160V to -200V depending on the model, and are intended for use in power amplifier and driver stage amplifier applications. The document lists maximum ratings and typical electrical characteristics including collector-emitter breakdown voltage, saturation voltage, gain, cutoff currents, and more.

Uploaded by

hekebat319
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

INCHANGE Semiconductor isc Product Specification

isc Silicon PNP Power Transistors 2SA1306/A/B

DESCRIPTION
·Good Linearity of hFE
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -160V(Min)-2SA1306
= -180V(Min)-2SA1306A
= -200V(Min)-2SA1306B
·Complement to Type 2SC3298/A/B

APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

2SA1306 -160

Collector-Base
VCBO 2SA1306A -180 V
Voltage

2SA1306B -200

2SA1306 -160

Collector-Emitter
VCEO 2SA1306A -180 V
Voltage

2SA1306B -200

VEBO Emitter-Base Voltage -5 V

IC Collector Current-Continuous -1.5 A

IBB Base Current-Continuous -0.15 A

Collector Power Dissipation


PC 20 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification

isc Silicon PNP Power Transistors 2SA1306/A/B

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

2SA1306 -160

Collector-Emitter
V(BR)CEO 2SA1306A IC= -10mA; IB= 0 -180 V
Breakdown Voltage

2SA1306B -200

VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.5 V

VBE(on) Base-Emitter On Voltage IC= -500mA; VCE= -5V -1.0 V

ICBO Collector Cutoff Current VCB= -160V; IE= 0 -1.0 μA

IEBO Emitter Cutoff Current VEB= -5V; IC=0 -1.0 μA

hFE DC Current Gain IC= -100mA ; VCE= -5V 70 240

fT Current-Gain—Bandwidth Product IC= -100mA ; VCE= -10V 100 MHz

COB Output Capacitance IE= 0 ; VCB= -10V;ftest= 1.0MHz 30 pF

‹ hFE Classifications

O Y

70-140 120-240

isc Website：www.iscsemi.cn 2

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