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2SB595 PNP Power Transistor Specs

This document provides product specifications for the SavantIC Semiconductor 2SB595 silicon PNP power transistor. It has a TO-220C package, is intended for power amplifier applications up to 30W, and has a high breakdown voltage of -100V and low collector saturation voltage of -2.0V max. Key electrical characteristics include collector-emitter breakdown voltage of -100V min, collector-emitter saturation voltage of -2.0V max, and DC current gain ranges from 40 to 240.

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292 views5 pages

2SB595 PNP Power Transistor Specs

This document provides product specifications for the SavantIC Semiconductor 2SB595 silicon PNP power transistor. It has a TO-220C package, is intended for power amplifier applications up to 30W, and has a high breakdown voltage of -100V and low collector saturation voltage of -2.0V max. Key electrical characteristics include collector-emitter breakdown voltage of -100V min, collector-emitter saturation voltage of -2.0V max, and DC current gain ranges from 40 to 240.

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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB595

DESCRIPTION
·With TO-220C package
·Complement to type 2SD525
·High breakdown voltage :VCEO=-100V
·Low collector saturation volage
: VCE(sat)=-2.0V(Max)

APPLICATIONS
·Power amplifier applications
·Recommend for 30W high fidelity
audio frequency amplifier output stage

PINNING

PIN DESCRIPTION

1 Emitter

Collector;connected to
2
mounting base

3 Base

Absolute maximum ratings(Tc=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -100 V

VCEO Collector-emitter voltage Open base -100 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -5 A

IE Emitter current -5 A

IB Base current -4 A

PC Collectorl power dissipation TC=25 40 W

Tj Junction temperature 150

Tstg Storage temperature -55~150

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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB595

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -100 V

V(BR)EBO Emitter-base breakdown votage IE=-10mA; IC=0 -5 V

VCEsat Collector-emitter saturation voltage IC=-4A;IB=-0.4 A -2.0 V

VBE Base-emitter on voltage IC=-4A ; VCE=-5V -1.5 V

ICBO Collector cut-off current VCB=-100V; IE=0 -100 µA

IEBO Emitter cut-off current VEB=-5V; IC=0 -1 mA

hFE-1 DC current gain IC=-1A ; VCE=-5V 40 240

hFE-2 DC current gain IC=-4A ; VCE=-5V 20

fT Transition frequency IC=-1A ; VCE=-5V 5 MHz

COB Output capacitance IE=0; VCB=-10V;f=1MHz 270 pF

hFE-1 classifications
R O Y

40-80 70-140 120-240

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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB595

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB595

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This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.

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