EXPERIMENT NO.

2
AIM: To obtain V-I characteristics of PN junction diode
Diode familiarisation
Introduction:

The The semiconductordiode

semiconductor diode is
is formed
formedbybydoping P-type
doping impurity
P-type in one side
impurity and side
in one N-type of
and N-type of impurity in another side of the semiconductor crystal formingin the
impurity in another side of the semiconductor crystal forming a p-n junction as shown
following figure.
a p-n junction as shown in the following figure.
Acceptor ions Junction Donor ions

Holes Electrons

x
p type -W p 0 Wn n type

Depletion region

At the junction initially free charge carriers from both side recombine
forming
At thenegatively charged
junction initially ions in
free charge P side
carriers fromofboth
junction(an atomforming
side recombine in P-side
negatively
accept electron
charged and
ions in becomes
P side negatively
of junction(an atom incharged ion) electron
P-side accept and positively charged
and becomes negatively
charged
ion on ion) and positively
n side(an atom incharged
n-sideionaccepts
on n side(an
holeatom
i.e.indonates
n-side accepts hole i.e.
electron donates
and
electron
becomes and becomes
positively positively
charged charged This
ion)region. ion)region.
region This region deplete
deplete of any of anyoftype
type of free
free
charge carrier is called as depletion region. Further recombination of free side
charge carrier is called as depletion region. Further recombination of free carrier on both
is prevented
carrier on both because of the depletion
side is prevented voltage
because generated
of the depletiondue to chargegenerated
voltage carriers kept at
distance by depletion (acts as a sort of insulation) layer as shown dotted in the above figure.
due to charge carriers kept at distance by depletion (acts as a sort of
insulation) layer as shown dotted in the above figure.
Working principle:
Working principle:
When voltage is not applied across the diode, depletion region forms as shown in the above
Whenfigure. Whenisthe
voltage voltage
not appliedis applied
acrossbetween the twodepletion
the diode, terminals of the diode
region (anode
forms as and
cathode) two possibilities arises depending on polarity of DC supply.
shown in the above figure. When the voltage is applied between the two
terminals of the diode (anode and cathode) two possibilities arises depending
[1] Forward-Bias Condition: When the +Ve terminal of the battery is connected to P-type
on polarity of DC supply.
material & -Ve terminal to N-type terminal as shown in the circuit diagram, the diode is said
to be forward biased.
[1] Forward-Bias The application
Condition: Whenofthe forward
+Vebias voltage will
terminal of force
the electrons
batteryin is
N-type
and holes in P-type material to recombine with the ions near boundary and to flow crossing
connected to P-type material & -Ve terminal to N-type terminal as shown in
junction. This reduces width of depletion region. This further will result in increase in majority
the circuit diagram, the diode is said to be forward biased. The application of
carriers flow across the junction. If forward bias is
forward bias voltage will force electrons in N-type and holes in P-type
material to recombine with the ions near boundary and to flow crossing
junction. This reduces width of depletion region. This further will result in
increase in majority carriers flow across the junction. If forward bias is

E.C. DEPARTMENT, GOVERNMENT ENGINEERING COLLEGE, RAJKOT

 EXPERIMENT NO. 3
AIM: To obtain V-I characteristics of Zener diode
further increased in magnitude the depletion region width will continue to decrease, resulting
Introduction:
in exponential rise in current as shown in ideal diode characteristic curve.
The Zener diode is designed to operate in reverse breakdown region.
Zener diode is used for voltage regulation purpose. Zener diodes are
[2]Reverse-biased:
designed for specific If the negative terminal
reverse of battery voltage
breakdown (DC powercalled
supply)Zener
is connected with P-
breakdown
type terminal of diode and +Ve terminal of battery connected to N type then diode is said to
voltage (VZ). The value of VZ depends on amount of doping. Breakdown
be reverse biased. In this condition the free charge carriers (i.e. electrons in N-type and holes
incurrent
P-type) iswilllimited
move away by power dissipation
from junction capacity
widening of the
depletion zener
region diode.
width. The If power
minority
capacity
carriers (i.e. of
–vethe Zener
electrons is 1 W
in p-type andand Zener
+ve holes voltagecaniscross
in n-type) 10V,thehighest
depletionreverse
region
currentinisminority
resulting 0.1A or 100 current
carrier mA. If flow
current
calledincreases
as reverse more than
saturation this limit,
current(Is). diode
As no of
will becarrier
minority damaged.is very Forward
small so thecharacteristics
magnitude of Is isoffew
the Zener diode
microamperes. is similar
Ideally to
current in
reverse
normal bias
PNis junction
zero. diode.

InExperiment
short, currentProcedure:
flows through diode in forward bias and does not flow through diode in
reverse bias. Diodethe
Connect can pass current
power only voltmeter,
supply, in one direction.
current meter with the diode as
shown in the figure for reverse bias. You can use two multimeter (one
Schottkytodiodes
measure current through diode and other to measure voltage
across diode)
Schottky diodes are constructed from a metal to semiconductor contact. They have a lower
Increase voltage from the power supply from 0V to 20V in step as
forward voltage drop than a standard diode. Their forward voltage drop at forward currents
of aboutshown inthe
1 mA is in therange
observation table
0.15 V to 0.45 V, which makes them useful in voltage clamping
Measure voltage across diode and current through diode. Note down
applications and prevention of transistor saturation.
readings in the observation table.
The Zener diode isDC
Reverse designed
powerto supply
operate in reverse for
polarity breakdown
forwardregion.
bias Zener diode is used for
voltage regulation purpose. Zener diodes are designed for
Repeat the above procedure for the different values specific reverse
of breakdown voltage
supply voltage
called Zener breakdown voltage (VZ). The value of VZ depends on amount of doping.
for reverse bias
Breakdown current is limited by power dissipation capacity of the zener diode. If power
Draw VI characteristics for reverse bias and forward bias in one graph
capacity of the Zener is 1 W and Zener voltage is 10V, highest reverse current is 0.1A or 100
mA. If current increases more than this limit, diode will be damaged. Forward characteristics
Circuit diagram (reverse bias)
of the Zener diode is similar to normal PN junction diode.

+ -
1K
A

+
DC POW ER Zener
SUPPY Diode V
0-30V
-

The semiconductor photodiode is a light detector device which detects presence of light. It
is used to convert optical power into electrical current. PN junction Photo diode have P type
and N type semiconductor forms junction. Thin P type layer is deposited on N type substrate.
P-N
E.C.junction has a GOVERNMENT
DEPARTMENT, space charge ENGINEERING
region at theCOLLEGE,
interfaceRAJKOT
of the P and N type material. Light
 presence of light. It is used to convert optical power into electrical current.
PN junction Photo diode have P type and N type semiconductor forms
junction. Thin P type layer is deposited on N type substrate. P-N junction
has a space charge region at the interface of the P and N type material. Light
enters through P-layer as shown in the following figure. This diode has
relatively
enters through thinP-layer
depletion region
as shown around
in the the figure.
following junction.
This It is reverse
diode biased
has relatively to
thin
depletion
increaseregion
width around
of thethedepletion
junction. It region.
is reversePhotons
biased to of
increase
light width of theindepletion
entering P-layer
region.
ionize Photons of light entering
electron-hole in P-layer generates
pair. Photon ionize electron-hole pair. Photon
electron-hole pairgenerates
in the
electron-hole pair in the depletion region that moves rapidly with
depletion region that moves rapidly with the drift velocity by the electric the drift velocity by the
electric field.
field.

PHOTODIODE

Responsivity is important technical term related to the photodiode. It

is ratio of photocurrent to incident optical power. Responsivity of the
Responsivity is important technical term related to the photodiode. It is ratio of photocurrent
tophotodiode is proportional
incident optical to width
power. Responsivity of photodiode
of the the junction. Photo diode
is proportional is used
to width of thein
fiber optic
junction. Photocommunication
diode is used inatfiberreceiver
optic side. It detectsatincoming
communication light Itfrom
receiver side. the
detects
fiber end
incoming and
light fromconvert
the fiberit end
intoand
electrical
convert itsignal. It cansignal.
into electrical be also used
It can in used
be also remotein
control
remote receiver.
control receiver.

Experiment
Varicap Procedure:
or varactor diodes
Connect the power supply, voltmeter, current meter with the
These are used as voltage-controlled
photodiode as shown in capacitors.
the figureThese are important in PLL (phase-locked
loop) andApply
FLL (frequency-locked
10V from the DC loop)power
circuits,supply
allowing tuning circuits, such as those in
television receivers,AC
Increase to lock quickly,
power givenreplacing
to lamp older
to designs
increasethatintensity
took a long time to warm up
and lock.
Measure reverse leakage current (photo current) of photodiode for
Esaki ordifferent light intensity
tunnel diodes
Draw graph of light intensity versus photocurrent.
These have a region of operation showing negative resistance caused by quantum tunneling,
thus allowing amplification of signals and very simple bistable circuits. These diodes are also
BASIC ELECTRONICS LABORATORY MANUAL 25
the type most resistant to nuclear radiation.

Gunn diodes

These are similar to tunnel diodes in that they are made of materials such as GaAs or InP that
exhibit a region of negative differential resistance. With appropriate biasing, dipole domains
form and travel across the diode, allowing high frequency microwave oscillators to be built.

Peltier diodes

These are used as sensors and heat engines for thermoelectric cooling.