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NTE2365 Silicon NPN Transistor High Voltage Horizontal Deflection Output

This document provides information on the NTE2365 silicon NPN transistor, which is intended for use in high voltage horizontal deflection output applications. It lists the transistor's key features as having a typical fall time of 100ns, high reliability, and a maximum collector-base breakdown voltage of 1500V. The document also provides the transistor's maximum ratings and electrical characteristics, including allowable voltage and current levels, as well as timing specifications such as storage and fall times. Dimensions of the transistor package are also included.

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Abel Rodriguez
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103 views2 pages

NTE2365 Silicon NPN Transistor High Voltage Horizontal Deflection Output

This document provides information on the NTE2365 silicon NPN transistor, which is intended for use in high voltage horizontal deflection output applications. It lists the transistor's key features as having a typical fall time of 100ns, high reliability, and a maximum collector-base breakdown voltage of 1500V. The document also provides the transistor's maximum ratings and electrical characteristics, including allowable voltage and current levels, as well as timing specifications such as storage and fall times. Dimensions of the transistor package are also included.

Uploaded by

Abel Rodriguez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

NTE2365

Silicon NPN Transistor


High Voltage Horizontal Deflection Output

Features:
D High Speed: tf = 100ns typ
D High Reliability
D High Breakdown Voltage: VCBO = 1500V

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)


Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 800V, IE = 0 – – 10 µA
ICES VCE = 1500V, RBE = 0 – – 1.0 mA
Collector Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0 800 – – V
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 1.0 mA
Collector–Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 2.5A – – 5 V
Base–Emitter Saturation Voltage VBE(sat) IC = 10A, IB = 2.5A – – 1.5 V
DC Current Gain hFE(1) VCE = 5V, IC = 1A 8 – 30
hFE(2) VCE = 5V, IC = 10A 4 – 8
Storage Time tstg IC = 8A, IB1 = 1.6A, IB2 = –3.2A – – 3.0 µs
Fall Time tf – – 0.2 µs
.810 (20.57) .204 (5.2)
Max

.236
(6.0)

1.030
(26.16)
.137 (3.5)
Dia Max

.098
(2.5) .787
(20.0)

.215 (5.45) .040 (1.0) .023


(0.6)

B C E

Note: Pin2 connected to metal part of


mounting surface.

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