QUESTION BANK

UNIT II:BJT

Subject:-Basic Electronics Engineering Class: - (FE)

Name of Unit: - BJT circuits (Unit-II)

Q1. The three terminals of a bipolar junction transistor are called (mark1)

Ans:- A) p ,n ,p

B) n, p, n

C) input, output, ground

D) base, emitter, collector

Q2. In a PNP transistor, the P regions are (mark1)

Ans:- A) base and emitter

B) base and collector

C) emitter and collector

D) all of the above

Q3. For operation as an amplifier, the base of an NPN transistor must be (mark1)

Ans:- A) positive with respect to the emitter

B) negative with respect to the emitter

C) positive with respect to the collector

D) 0 V

Q4. The emitter current is always (mark1)

Ans:- A) greater than the base current

B) less than the collector current

C) greater than the collector current

D) greater than the base current and greater than the collector
current
Q5. The βdc of a transistor is its (mark1)

Ans:- A) current gain

B) voltage gain

C) power gain

D) internal resistance
Q6. If Ic is 50 times larger than IB, then βDC (mark1)

Ans:- A) 0.02

B) 100

C) 50

D) 500

Q7. The approximate voltage across the forward-biased base-emitter junction (mark1)
of a silicon BJT is
Ans:- A) 0 V

B) 0.7 V

C) 0.3 V

D) VBB

Q8. The bias condition for a transistor to be used as a linear amplifier is called (mark1)

Ans:- A) forward-reverse

B) forward-forward

C) reverse-reverse

D) collector bias

Q9. If the output of a transistor amplifier is 5 V rms and the input is 100 mV (mark1)
rms, the voltage gain is
Ans:- A) 5

B) 500

C) 50

D) 100

Q10. When operated in cut-off and saturation, the transistor acts like a (mark1)

Ans:- A) linear amplifier

B) switch

C) variable capacitor

D) variable resistor

Q11. In cut-off, VCE is (mark1)

Ans:- A) minimum
 B) maximum

C) equal to Vcc

D) maximum and equal to Vcc

Q12. In saturation , VCE is (mark1)

Ans:- A) 0.7 V

B) equal to VCC

C) minimum

D) maximum

Q13. To saturate a BJT, (mark1)

Ans:- A) IB=IC(sat)

B) I B >IC(sat)/ βDC

C) VCC must be at least 10 V

D) the emitter must be grounded

Q14. Once in saturation, a further increase in base current will (mark1)

Ans:- A) cause the collector current to increase

B) not affect the collector current

C) cause the collector current to decease

D) turn the transistor off

Q15. If the base emitter junction is open, the collector voltage is (mark1)

Ans:- A) VCC

B) 0 V

C) Floating

D) 0.2 V

Q16. A small-signal amplifier (mark1)

Ans:- A) uses only a small portion of its load line

B) always has an output signal in the mV range

C) goes into saturation once on each input cycle

D) is always a common-emitter amplifier

Q17. The parameter hfe corresponds to (mark1)

Ans:- A) βDC

B) βac

C) re’

D) rc’

Q18. The circuit that provides the best stabilization of operating point is.......... (mark1)

Ans:- A) base resistor bias

B) collector feedback bias

C) potential divider bias

D) none of the above

Q19. A certain common emitter amplifier has a voltage gain of 100. If the emitter (mark1)
bypass capacitor is removed
Ans:- A) the circuit will become unstable

B) the voltage gain will decrease

C) the voltage gain will increase

D) the Q-point will shift

Q21. A heat sink is generally used with a transistor to......... (mark1)

Ans:- A) increase the forward current

B) decrease the forward current

C) compensate for excessive doping

D) prevent excessive temperature rise

Q22. For a common emitter amplifier, Rc=1.0KΩ, RE=390Ω, βac=75, re’=15. (mark2)
Assuming that RE is completely bypassed at the operating frequency, the
voltage gain is
Ans:- A) 66.7

B) 2.56

C) 2.47

D) 75

Q23. Which is the higher gain provided by a C-E configuration? (mark1)

Ans:- A) Voltage

B) Current

C) Resistance

D) Power

Q24. In a transistor, signal is transferred from a ........circuit. (mark1)

Ans:- A) high resistance to low resistance

B) high resistance to high resistance

C) low resistance to high resistance

D) low resistance to low resistance

Q25. The input resistance of a common-base amplifier is (mark1)

Ans:- A) very low

B) very high

C) the same as CE

D) the same as CC

Q26. In a common-emitter amplifier with voltage divider bias, Rin(base)=68 kΩ, (mark2)
R1=33kΩ and R2=15kΩ. The total input resistance is
Ans:- A) 68 kΩ

B) 8.95 kΩ

C) 22.2 kΩ

D) 12.3 kΩ

Q27. A CE amplifier is driving a 10kΩ load. If Rc=2.2 kΩ and re’=10 Ω, the voltage (mark1)
gain is approximately
Ans:- A) 220

B) 1000

C) 10

D) 180

Q28. Each stage of a four-stage amplifier has a voltage gain of 15. The overall (mark1)
voltage gain is
Ans:- A) 60

B) 15

C) 50,625
 D) 3078

Q29. In the common-emitter configuration, if the transistor is in the active (mark1)

region, then
Ans:- A) Ic = β IE

B) IE = α IB

C) IB = β Ic

D) Ic= β IB

Q30. In the common-emitter configuration, if the transistor is in the saturation (mark1)

region, then
Ans:- A) IC>IE

B) IC< β IB

C) IE< IB

D) IB> β IC

Q31. The emitter of a transistor is..........doped. (mark1)

Ans:- A) Moderately

B) Heavily

C) Lightly

D) none of the above

Q32. A transistor is a ...........operated device. (mark1)

Ans:- A) current and voltage

B) current

C) voltage

D) resistor

Q33. The input impedance of a transistor is..... (mark1)

Ans:- A) low

B) high

C) very high

D) medium
Q34. The output impedance of a transistor is (mark1)

Ans:- A) low

B) high

C) very low

D) none of the above

Q35. The relation between β and α is........ (mark1)

Ans:- A) β = α/1+α

B) β = α/1-α

C) β = α -1/α

D) β = α+1/α

Q36. The value of β of a transistor is ............ (mark1)

Ans:- A) between 20 and 500

B) 1

C) less than 1

D) 0

Q37. Transistor biasing represents .........condition (mark1)

Ans:- A) a.c

B) d.c

C) both a.c. and d.c.

D) none of above

Q38. Transistor biasing is generally provided by a......... (mark1)

Ans:- A) biasing circuit

B) bias battery

C) Diode

D) a.c. input

Q49. The point of intersection of d.c and a.c load lines represents....... (mark1)

Ans:- A) current point

B) operating point

C) voltage gain
 D) power point

Q40. The phase difference between the input and output voltage in common (mark1)
base arrangements is....
Ans:- A) 900

B) 1800

C) 00

D) 3600

Q41. The phase difference between the input and output voltage in common (mark1)
emitter arrangements is.....
Ans:- A) 00

B) 900

C) 1800

D) 2700

Q42. In the zero signal conditions, a transistor sees ...... (mark1)

Ans:- A) a.c

B) a.c and d.c

C) d.c

D) operating point

Q43. The input capacitor in an amplifier is the ....... capacitor. (mark1)

Ans:- A) bypass

B) coupling

C) leakage

D) emitter

Q44. The point of intersection of d.c and a.c load lines called. (mark1)

Ans:- A) cut off point

B) operating point

C) saturation point

D) none of above

Q45. In the d.c equivalent circuit of a transistor amplifier, the capacitor is (mark1)
considered.....
Ans:- A) short

B) open

C) open and short

D) switch

Q46. In practice, the voltage gain of an amplifier is expressed....... (mark1)

Ans:- A) in db

B) in volts

C) in numbers

D) in watts

Q47. The purpose of d.c conditions, in a transistor is to... (mark1)

Ans:- A) reverse bias the emmiter

B) set up operating point

C) reverse bias the collector

D) forward bias base

Q48. A transistor amplifier has high output impedence because..... (mark1)

Ans:- A) high efficiency

B) emitter is heavily doped

C) collector has reverse bias

D) base-emitter junction forward biased

Q49. The noise factor of an ideal amplifier expressed in db is----- (mark1)

Ans:- A) 1

B) 0

C) 0.1

D) 10

Q50. The gain of an amplifier is expressed in db because.......... (mark1)

Ans:- A) human ear response is logarithmic

B) it is simple unit

C) calculation easy
 D) easy to understand

Q51. In a BJT with β= 100, ‘α’ equals (mark1)

Ans:- A) 99

B) 0.99

C) 1.0

D) 1.01

Q52. Pinch-off voltage VP for an FET is the drain voltage at which (mark1)

Ans:- A) significant drain current starts flowing

B) drain current becomes zero

C) all free charges get removed from the channel

D) avalanche break down takes place

Q53. A transistor in common emitter mode has (mark1)

Ans:- A) a high input resistance and low output resistance

B) a medium input resistance and high output resistance

C) a very low input resistance and a low output resistance

D) a high input resistance and a high output resistance

Q54. Compared to bipolar transistor, a JFET has (mark1)

Ans:- A) lower input impedance

B) higher voltage gain

C) higher input impedance and high voltage gain

D) higher input impedance and low voltage gain

Q55. JFET is a (mark1)

Ans:- A) Current controlled device with high input resistance

B) Voltage controlled device with high input resistance

C) Current Controlled Current Source (CCCS)

D) Voltage Controlled Voltage Source (VCVS)

Q56. Which of the following is an active device (mark1)

Ans:- A) an electric bulb

 B) a diode

C) a BJT

D) a transformer

Q57. Which configuration has unity voltage gain (ideal) (mark1)

Ans:- A) a Common Collector (CC)

B) a Common Emitter (CE)

C) a Common Base (CB)

D) CE followed by CB

Q58. Removing bypass capacitor across the emitter-leg resistor in a CE amplifier (mark1)
causes
Ans:- A) increase in current gain

B) decrease in current gain.

C) increase in voltage gain.

D) decrease in voltage gain.

Q59. The important characteristic of emitter-follower is (mark1)

Ans:- A) high input impedance and high output impedance

B) high input impedance and low output impedance

C) low input impedance and low output impedance

D) low input impedance and high output impedance

Q60. In a JFET, at pinch-off voltage applied on the gate (mark1)

Ans:- A) the drain current becomes almost zero

B) the drain current begins to decrease

C) the drain current is almost at saturation value.

D) the drain-to-source voltage is close to zero volts.

Q61. The common collector amplifier is also known as (mark1)

Ans:- A) collector follower

B) Base follower

C) Emitter follower

D) Source follower
Q62. Transistor is a (mark1)

Ans:- A) Current controlled current device

B) Current controlled voltage device

C) Voltage controlled current device

D) Voltage controlled voltage device

Q63. For a JFET, when VDS is increased beyond the pinch off voltage, the drain (mark1)
current

Ans:- A) Increases

B) Decreases

C) remains constant.

D) First decreases and then increases.

Q64. Two stages of BJT amplifiers are cascaded by RC coupling. The voltage gain (mark1)
of the first stage is 10 and that of the second stage is 20. The overall gain of
the coupled amplifier is
Ans:- A) 10x20

B) 10+20

C) (10+20)2

D) (10x20)/2

Q65. The trans-conductance, gm, of a JFET is computed at constant VDS, by the (mark1)
following:
Ans:- ∆
A) ∆

∆
B)
∆

C) ∆ ×∆

∆
D)
∆ ∆

Q66. The current amplification factor in CE configuration is (mark1)

Ans:- A) Β

B) Α

C) β+1
 D) 1/ β

Q67. The arrowhead on the transistor symbol points in the direction of (mark1)

Ans:- A) The arrowhead on the transistor symbol points in the direction of

B) minority carrier flow in the emitter region.

C) majority carrier flow in the remitter region.

D) Conventional current flow in the emitter region.

Q68. The silicon transistor are more widely used than germanium transistors (mark1)
because
Ans:- A) they have smaller leakage current

B) they have better ability to dissipate heat

C) they have smaller depletion layer

D) they have larger current carrying capacity

Q69. For an NPN transistor in normal bias (mark1)

Ans:- A) only holes cross the collector junction

B) only majority carriers cross the collector junction

C) the emitter junction has high resistance

D) emitter junction is forward biased and collector junction is

reverse biased
Q70. The most commonly used transistor circuit arrangement is (mark1)

Ans:- A) common base

B) common emitter

C) common collector

D) none of these

Q71. For transistor action (mark1)

Ans:- A) The base region must be very thin and lightly doped.

B) the emitter junction must be forward biased and collector junction

should be reverse biased.
C) the emitter should be heavily doped to supply the required amount
of majority carriers.
D) all of these
Q72. The ICBO is the current that flows when some dc voltage is applied (mark1)

Ans:- A) in the forward direction to the emitter junction with collector open

B) in the reverse direction to the emitter junction with collector open

C) in the reverse direction to the collector junction with emitter

open
D) in the forward direction to the collector junction with emitter open

Q73. The magnitude of current ICBO (mark1)

Ans:- A) depends largely upon the emitter doping

B) depends largely upon emitter-base junction base potential

C) Increases with the increase in temperature

D) is generally greater in silicon than in germanium transistor

Q74. The current ICBO flows in the (mark1)

Ans:- A) emitter and base leads

B) collector and base leads

C) emitter and collector leads

D) none of these

Q75. In CE mode of transistor, the most noticeable effect of a small increase in (mark1)
temperature is
Ans:- A) the increase in output resistance

B) the increase in leakage current ICEO

C) the decrease in current gain

D) the increase in ac current gain

Q76. In CE configuration, the output V-I characteristics are drawn by taking (mark1)

Ans:- A) VCE versus IC for constant value of IE

B) VBE versus IE for constant value of VCE

C) VBE versus IB for constant value of IC

D) VBE versus IB for constant value of VCE

Q77. The emitter current in a junction with normal bias (mark1)

Ans:- A) is almost equal to the base current

 B) is equal to the sum of IB and IC

C) is equal to the sum of IB and IC

D) is equal to ICBO

Q77. The β of a transistor may be determined directly from the curve plotted (mark1)
between
Ans:- A) VCE and IC for constant IB

B) VCE and IC for constant IE

C) VCE and IE for constant IB

D) VBE and IE for constant VCE

Q78. In CB configuration, the output V-I characteristics of a transistor are drawn (mark1)
by taking
Ans:- A) VCB versus IC for constant IE

B) VCB versus IB for constant IE

C) VCE versus IC for constant IE

D) VCB versus IB for constant IE

Q79. In which mode of BJT operation are both junction reverse biased (mark1)

Ans:- A) Active

B) Saturation

C) cut off

D) reverse active

Q80. In which mode of BJT operation are both junction forward biased (mark1)

Ans:- A) active

B) saturation

C) cut off

D) reverse active

Q81. In a bipolar junction transistor the base region is made very thin so that (mark1)

Ans:- A) recombination in base region is minimum

B) electric field gradient in base is high

C) electric field gradient in base is high

 D) base can be easily biased

Q82. MOSFET uses the electric field of (mark1)

Ans:- A) gate capacitance to control the channel current

B) barrier potential of p-n junction to control the channel current

C) gate capacitance to control the channel current and barrier

potential of p-n junction to control the channel current
D) none of these

Q83. In MOSFET devices the N-channel type is better the P-channel type in the (mark1)
following respects
Ans:- A) it has better noise immunity

B) it is faster

C) it is TTL compatible

D) it has better drive capability

Q84. IC   I E  _______ (mark1)

Ans:- A) more than 1

B) less than 1

C) 1

D) None of these

Q85. A depletion MOSFET differs from a JFET in the sense that it has no (mark1)

Ans:- A) Channel

B) P-N junction

C) Gate

D) Substrate

Q86. The extremely high input impedance of a MOSFET is primarily due to the (mark1)

Ans:- A) absence of its channel

B) negative gate-source voltage

C) depletion of current carriers

D) extremely small leakage current of its gate capacitor

Q87. Most small-signal E-MOSFETs are found in (mark1)

Ans:- A) Heavy-current applications

B) Discrete circuits

C) Disk drives

D) Integrated circuit

Q88. The main advantage of CMOS is its (mark1)

Ans:- A) High power rating

B) Small-signal operation

C) Switching capability

D) Low power consumption

Q89. In an Enhancement MOSFET, drain current starts only when VGS (th) is (mark1)

Ans:- A) Positive

B) Negative

C) Zero

D) greater than Vgs (th)

Q90. CMOS stands for (mark1)

Ans:- A) Common MOS

B) Active-load switching

C) p-channel and n-channel devices

D) complementary MOS

Q91. Ideally, a load line is a straight line drawn on the collector characteristic (mark1)
curves between
Ans:- A) the Q-point and cut-off

B) the Q-point and saturation

C) VCE(cutoff) and IC(sat)

D) IB = 0 and IB = Ic/βDC

Q92. Determine whether the transistor in Figure below is biased in cutoff, (mark2)
saturation, or the linear region. Keep in mind that Ic = β DC .lB is valid only in
the linear region.
Ans:- A) Cutoff

B) saturation

C) linear

D) none of these

Q93. The primary function of the bias circuit is to (mark1)

Ans:- A) hold the circuit stable at VCC

B) hold the circuit stable at Vin

C) ensure proper gain is achieved

D) hold the circuit stable at the designed Q-point

Q94. A certain common-emitter amplifier has a voltage gain of 100. If the (mark1)
emitter bypass capacitor is removed,
Ans:- A) the circuit will become unstable

B) the voltage gain will decrease

C) the voltage gain will increase

D) the Q-point will shift

Q95. What is the effect on channel current, on application of a more positive voltage to (mark2)
the GATE of the depletion mode n-channel MOSFET (true/false)
Ans:- A) Reduces

B) Rises

C) Remains same

D) Can not predict

Q96. The input resistance of a common-base amplifier is (mark1)

Ans:- A) very low

B) very high
 C) the same as CE

D) the same as CC

Q97. When transistors are used in digital circuits they usually operate in the: (mark1)

Ans:- A) active region

B) breakdown region

C) saturation and cutoff regions

D) linear region

Q98. Three different Q points are shown on a dc load line. The upper Q point (mark1)
represents the:

Ans:- A) minimum current gain

B) intermediate current gain

C) maximum current gain

D) cut-off point

Q99. In a bipolar junction transistor the base region is made very thin so that (mark1)

Ans:- A) recombination in base region is minimum

B) electric field gradient in base is high

C) base can be easily fabricated

D) base can be easily biased

Q100. A current ratio of IC/IE is usually less than one and is called: (mark1)

Ans:- A) Beta

B) Theta

C) Alpha

D) Omega

Q101. In a C-E configuration, an emitter resistor is used for (mark1)

Ans:- A) Stabilization

B) ac signal bypass

C) collector bias
 D) higher gain

Q102. The ends of a load line drawn on a family of curves determine: (mark1)

Ans:- A) saturation and cutoff

B) the operating point

C) the power curve

D) the amplification factor

Q103. Often a common-collector will be the last stage before the load; the main (mark1)
function(s) of this stage is to:

Ans:- A) provide voltage gain

B) provide phase inversion

C) provide a high-frequency path to improve the frequency response

D) buffer the voltage amplifier from the low-resistance load and

provide impedance matching for maximum power transfer

Q104. The arrowhead on the transistor symbol points in the direction of (mark1)

Ans:- A) electron flow in the emitter region.

B) minority carrier flow in the emitter region.

C) majority carrier flow in the remitter region.

D) Conventional current flow in the emitter region.

Q105. If a transistor operates at the middle of the dc load line, a decrease in the (mark1)
current gain will move the Q point:

Ans:- A) off the load line

B) nowhere

C) up

D) down