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Week 8 Quiz 4: Schottky Diode II ECE 606: Solid State Devices

This document contains a quiz about Schottky diodes with 5 multiple choice questions. The quiz covers topics like the small signal model of a Schottky diode, the characteristic time response of majority carriers, how to make an ohmic contact to a semiconductor, the consequences of Fermi level pinning, and includes a section for the student to ask questions about the lecture.

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381 views2 pages

Week 8 Quiz 4: Schottky Diode II ECE 606: Solid State Devices

This document contains a quiz about Schottky diodes with 5 multiple choice questions. The quiz covers topics like the small signal model of a Schottky diode, the characteristic time response of majority carriers, how to make an ohmic contact to a semiconductor, the consequences of Fermi level pinning, and includes a section for the student to ask questions about the lecture.

Uploaded by

Ayush Anand
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Week

 8  Quiz  4:    Schottky  Diode  II  


ECE  606:  Solid  State  Devices  
Mark  Lundstrom  
Purdue  University,  Spring  2013  
 
Answer  the  four  multiple  choice  questions  below  by  choosing  the  one,  best  answer.  
Then  ask  a  question  about  the  lecture.  
 
 
1) The  small  signal  model  for  a  Schottky  barrier  diode  contact  contains  what  
parameters?    
 
a)    The  dynamic  resistance  and  the  junction  capacitance.    
b)    The  dynamic  resistance  and  the  diffusion  capacitance.    
b)    The  junction  capacitance  and  diffusion  capacitance.    
b)    The  dynamic  resistance.    
b)    The  junction  capacitance.    
 
2) Majority  carriers  respond  in  what  characteristic  time?  
 
a)    The  carrier  lifetime.  
b)    The  carrier  diffusion  time,  
c)    The  scattering  time.  
d)    The  dielectric  relaxation  time.  
e)    The  drift  time.
 
 
3) To  make  a  good  ohmic  contact  to  a  semiconductor,  what  should  be  done?  
 
a)    Choose  a  metal  with  a  high  Schottky  barrier  height.  
b)    Use  a  lightly  doped  semiconductor.  
c)    Introduce  defects  into  the  semiconductor  to  lower  its  lifetime.  
d)    Dope  the  semiconductor  very  heavily.  
e)    Reduce  the  contact  area.  
 
4) What  are  the  consequences  of  Fermi  level  pinning?  
 
a)     The  Schottky  barrier  height  will  be  insensitive  to  the  type  of  metal.  
b)     The  SB  will  behave  like  a  PN  junction.  
c)     The  SB  will  be  ohmic  –  not  rectifying.  
d)   The  thermionic  emission  theory  will  have  to  be  replaced  by  drift-­‐diffusion  
theory.  
e)   The  ideality  factor  of  the  SB  will  decrease.  
 
 
Continued  on  next  page  

  1  
 
5)  What  question(s)  do  you  have  about  this  lecture?  
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Turn  in  to  Ms.  Wanda  Dallinger,  EE-­‐326  before  4:30  PM  Friday,  March  1      

  2  

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