BSP 315

SIPMOS ® Small-Signal Transistor

• P channel
• Enhancement mode
• Logic Level
• VGS(th) = -0.8...-2.0 V

Pin 1 Pin 2 Pin 3 Pin 4

G D S D

Type VDS ID RDS(on) Package Marking

BSP 315 -50 V -1.1 A 0.8 Ω SOT-223 BSP 315
Type Ordering Code Tape and Reel Information
BSP 315 Q67000-S75 E6327
BSP 315 Q67000-S249 E6433

Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage VDS -50 V
Drain-gate voltage VDGR
RGS = 20 kΩ -50
Gate source voltage VGS ± 20
Continuous drain current ID A
TA = 39 °C -1.1
DC drain current, pulsed IDpuls
TA = 25 °C -4.4
Power dissipation Ptot W
TA = 25 °C 1.8

Semiconductor Group 1 Sep-12-1996

 BSP 315

Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air RthJA ≤ 70 K/W
Therminal resistance, junction-soldering point 1) RthJS ≤ 10
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = -0.25 mA, Tj = 25 °C -50 - -
Gate threshold voltage VGS(th)
VGS=VDS, ID = -1 mA -0.8 -1.1 -2
Zero gate voltage drain current IDSS
VDS = -50 V, VGS = 0 V, Tj = 25 °C - -0.1 -1 µA
VDS = -50 V, VGS = 0 V, Tj = 125 °C - -10 -100
VDS = -30 V, VGS = 0 V, Tj = 25 °C - - -100 nA
Gate-source leakage current IGSS nA
VGS = -20 V, VDS = 0 V - -10 -100
Drain-Source on-state resistance RDS(on) Ω
VGS = -10 V, ID = -1.1 A - 0.65 0.8

Semiconductor Group 2 Sep-12-1996

 BSP 315

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = -1.1 A 0.25 0.7 -
Input capacitance Ciss pF
VGS = 0 V, VDS = 25 V, f = 1 MHz - 300 400
Output capacitance Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 150 230
Reverse transfer capacitance Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 85 130
Turn-on delay time td(on) ns
VDD = -30 V, VGS = -10 V, ID = -0.29 A
RGS = 50 Ω - 8 12
Rise time tr
VDD = -30 V, VGS = -10 V, ID = -0.29 A
RGS = 50 Ω - 35 55
Turn-off delay time td(off)
VDD = -30 V, VGS = -10 V, ID = -0.29 A
RGS = 50 Ω - 80 110
Fall time tf
VDD = -30 V, VGS = -10 V, ID = -0.29 A
RGS = 50 Ω - 140 190

Semiconductor Group 3 Sep-12-1996

 BSP 315

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TA = 25 °C - - -1.1
Inverse diode direct current,pulsed ISM
TA = 25 °C - - -4.4
Inverse diode forward voltage VSD V
VGS = 0 V, IF = -2.2 A, Tj = 25 °C - -1.2 -1.5

Semiconductor Group 4 Sep-12-1996

 BSP 315

Power dissipation Drain current

Ptot = ƒ(TA) ID = ƒ(TA)
parameter: VGS ≥ -10 V

2.0 -1.2

W A

-1.0
Ptot 1.6 ID
-0.9
1.4
-0.8
1.2
-0.7

1.0 -0.6

0.8 -0.5

-0.4
0.6
-0.3
0.4
-0.2
0.2
-0.1
0.0 0.0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TA TA

Safe operating area ID=f(VDS) Transient thermal impedance

parameter : D = 0, TC=25°C Zth JA = ƒ(tp)
parameter: D = tp / T

10 2

K/W

10 1
ZthJC

10 0

10 -1
D = 0.50
0.20
10 -2 0.10
0.05
0.02
10 -3 single pulse
0.01

10 -4
-8 -7 -6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 10 10 s 10
tp

Semiconductor Group 5 Sep-12-1996

 BSP 315

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs parameter: tp = 80 µs, Tj = 25 °C

-2.6 2.6
Ptot = 2W
A Ω a b c d e f
lk j i h
-2.2 g VGS [V] 2.2
ID a -2.0 RDS (on)
-2.0 2.0
b -2.5

-1.8 c -3.0 1.8

f d -3.5
-1.6 e -4.0
1.6
f -4.5
-1.4 1.4
g -5.0
e
-1.2 h -6.0 1.2
g
i -7.0
-1.0 1.0
j -8.0 h
-0.8 d k -9.0 0.8 i
l -10.0 k j
-0.6 c 0.6

-0.4 b 0.4
VGS [V] =
a a b c d e f g h i j k
-0.2 0.2 -2.0 -3.0 -3.5 -4.0 -4.5 -5.0
-2.5 -6.0 -7.0 -8.0 -9.0 -10.0
0.0 0.0
0.0 -1.0 -2.0 -3.0 -4.0 V -6.0 0.0 -0.4 -0.8 -1.2 -1.6 A -2.4
VDS ID

Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs parameter: tp = 80 µs,

-6.0 1.1

A S

-5.0 0.9
ID gfs
-4.5
0.8
-4.0
0.7
-3.5
0.6
-3.0
0.5
-2.5
0.4
-2.0
0.3
-1.5

-1.0 0.2

-0.5 0.1
0.0 0.0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0.0 -1.0 -2.0 -3.0 -4.0 A -5.5
VGS ID

Semiconductor Group 6 Sep-12-1996

 BSP 315

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj ) VGS (th) = ƒ(Tj)
parameter: ID = -1.1 A, VGS = -10 V parameter: VGS = VDS, ID = -1 mA

2.4 -4.6
Ω V
-4.0
2.0
RDS (on) VGS(th)
-3.6
1.8
-3.2
1.6
-2.8
1.4

1.2 -2.4
98%
98%
1.0 -2.0
typ
0.8 -1.6
typ
0.6 -1.2
2%
0.4 -0.8

0.2 -0.4
0.0 0.0
-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS=0V, f = 1 MHz parameter: Tj , tp = 80 µs

10 4 -10 1

pF A
C IF

10 3 -10 0

Ciss

Coss
10 2 -10 -1
Crss Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)

10 1 -10 -2
0 -5 -10 -15 -20 -25 -30 V -40 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0
VDS VSD

Semiconductor Group 7 Sep-12-1996

 BSP 315

Drain-source breakdown voltage Safe operating area ID=f(VDS)

V(BR)DSS = ƒ(Tj ) parameter : D = 0.01, TC=25°C

-60
V
-58
V(BR)DSS-57
-56
-55
-54
-53
-52
-51
-50
-49
-48
-47
-46
-45
-60 -20 20 60 100 °C 160
Tj

Semiconductor Group 8 Sep-12-1996

 BSP 315

Package outlines
SOT-223
Dimensions in mm

Semiconductor Group 9 Sep-12-1996