UNISONIC TECHNOLOGIES CO.

, LTD
5N80 Preliminary Power MOSFET

5 Amps, 800 Volts

N-CHANNEL POWER MOSFET

„ DESCRIPTION 1
TO-220
The UTC 5N80 is a N-channel enhancement mode power
MOSFET. It use UTC advanced technology to provide avalanche
rugged technology and low gate charge.
It can be applied in high current, high speed switching, switch 1
mode power supplies (SMPS), consumer and industrial lighting, TO-220F
DC-AC inverters for welding equipment and uninterruptible power
supply(UPS).
„ FEATURES
* RDS(on):1.8Ω (TYP.)
* Avalanche rugged technology
* Low input capacitance
* Low gate charge
* Application oriented characterization
„ SYMBOL
2.Drain

1.Gate

3.Source

„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
5N80L-TA3-T 5N80G-TA3-T TO-220 G D S Tube
5N80L-TF3-T 5N80G-TF3-T TO-220F G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source

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5N80 Preliminary Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VGS=0 VDS 800 V
Gate-Source Voltage VGS ±30 V
Drain-Gate Voltage RGS=20kΩ VDGR 800 V
Continuous ID 5.5 A
Drain Current (Continuous)
Pulsed (Note 2) IDM 20 A
Avalanche Energy Single Pulsed (Note 3) EAS 320 mJ
TO-220 125 W
Power Dissipation PD
TO-220F 40 W
TO-220 1
Derating Factor W/°C
TO-220F 0.32
Junction Temperature TJ 150 °C
Storage Temperature TSTG -65~150 °C
Notes : Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-220 62.5
Junction to Ambient θJA °C/W
TO-220F 62.5
TO-220 1
Junction to Case θJC °C/W
TO-220F 3.12

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5N80 Preliminary Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 800 V
VDS=Max Rating 250
Drain-Source Leakage Current IDSS VDS= Max Rating×0.8, µA
1000
TC=125°C
Forward VGS=+20V +100 nA
Gate- Source Leakage Current IGSS
Reverse VGS=-20V -100 nA
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3 5 V
VGS=10V, ID=2.5A 1.8 2.6
Static Drain-Source On-State Resistance RDS(ON) Ω
VGS=10V, ID=2.5A, TC=100°C 4
VDS>ID(ON)×RDS(ON)max,
On State Drain Current ID(ON) 5 A
VGS=10V
Forward Transconductance (Note 1) gFS VDS>ID(ON)×RDS(ON)max, ID=2.5A 2 4 S
DYNAMIC PARAMETERS
Input Capacitance CISS 1190 1450 pF
Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz 165 200 pF
Reverse Transfer Capacitance CRSS 70 85 pF
SWITCHING PARAMETERS
Total Gate Charge QG 75 95 nC
Gate to Source Charge QGS VGS=10V, VDD=500V, ID=6A 9 nC
Gate to Drain Charge QGD 33 nC
Turn-ON Delay Time tD(ON) VDD=400V, ID=2.5A, RG=50Ω 50 65 ns
Rise Time tR VGS=10V (See test circuit, Fig. 3) 85 105 ns
Turn-OFF Delay Time tD(OFF) 120 150 ns
VDD=640V, ID=5.5A, RG=50Ω
Fall-Time tF 30 40 ns
VGS=10V (See test circuit, Fig. 5)
Cross-Over Time tC 160 200 ns
VDD=640V, ID=5.5A, RG=50Ω
Turn-On Current Slope (di/dt)on 200 A/µs
VGS=10V (See test circuit, Fig. 5)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD ISD=5.5A, VGS=0V 2 V
(Note 1)
Reverse Recovery Time tRR ISD=5.5A,dI/dt=100A/µs, 700 ns
Reverse Recovery Charge QRR VDD=80V,TJ=150°C 7.7 nC
Reverse Recovery Current IRRM (See test circuit, Fig. 5) 22 A
Source-Drain Current ISD 5.5 A
Source-Drain Current (Pulsed)
ISDM 20 A
(Note 1)
Notes: 1. Pulsed: Pulse duration=300µs, duty cycle 1.5%.
2. Pulse width limited by safe operating area.
3. Starting TJ=25°C, ID=IAR, VDD=50V

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5N80 Preliminary Power MOSFET
„ SWITCHING TIME TEST CIRCUIT

Fig. 1 Unclamped Inductive Load Test Circuits Fig. 2 Unclamped Inductive Waveforms

V(BR)DSS
L
VD
VD
2200µF 3.3µF
VDD IDM
ID
ID
VDD VDD
VI D. U. T.

PW

Fig. 5 Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time

A A A
D
MOS FAST L=100µH
G DIODE DIODE
25Ω B
S B B 3.3µF 1000µF
D VDD
RG G D. U. T.
+ S
85Ω
-

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5N80 Preliminary Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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