TZS4678 to TZS4717

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Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Zener voltage specified at 50 μA
• Maximum delta VZ given from 10 μA to 100 μA
• Very high stability
• Low noise
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912

APPLICATIONS
• Voltage stabilization
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models

PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
VZ range nom. 1.8 to 43 V
Test current IZT 0.05 mA
VZ specification Pulse current
Circuit configuration Single

ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
TZS4678 to TZS4717 TZS4678-GS08 to TZS4717-GS08 2500 (per 7" reel) 12 500/box

PACKAGE
MOLDING COMPOUND MOISTURE SENSITIVITY
PACKAGE NAME WEIGHT SOLDERING CONDITIONS
FLAMMABILITY RATING LEVEL
MSL level 1
QuadroMELF (SOD-80) 34 mg UL 94 V-0 260 °C/10 s at terminals
(according J-STD-020)

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation RthJA ≤ 300 K/W Ptot 500 mW
Zener current IZ Ptot/VZ mA
Junction to ambient air On PC board 50 mm x 50 mm x 1.6 mm RthJA 500 K/W
Junction temperature Tj 175 °C
Storage temperature range Tstg -65 to +175 °C
Forward voltage (max.) IF = 100 mA VF 1.5 V

Rev. 1.9, 25-Nov-2021 1 Document Number: 85613

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

ZENER VOLTAGE RANGE TEST CURRENT REVERSE CURRENT (3) VOLTAGE CHANGE (4)
PART VZ at IZT1 IZT1 IZT2 (2) IR at VR ΔVZ
NUMBER V mA μA V V
MIN. NOM. (1) MAX. MAX. MAX.
TZS4678 1.71 1.8 1.89 0.05 120 7.5 1 0.7
TZS4679 1.9 2 2.1 0.05 110 5 1 0.7
TZS4680 2.09 2.2 2.31 0.05 100 4 1 0.75
TZS4681 2.28 2.4 2.52 0.05 95 2 1 0.8
TZS4682 2.565 2.7 2.835 0.05 90 1 1 0.85
TZS4683 2.85 3 3.15 0.05 85 0.8 1 0.9
TZS4684 3.135 3.3 3.465 0.05 80 7.5 1.5 0.95
TZS4685 3.42 3.6 3.78 0.05 75 7.5 2 0.95
TZS4686 3.705 3.9 4.095 0.05 70 5 2 0.97
TZS4687 4.085 4.3 4.515 0.05 65 4 2 0.99
TZS4688 4.465 4.7 4.935 0.05 60 10 3 0.99
TZS4689 4.845 5.1 5.355 0.05 55 10 3 0.97
TZS4690 5.32 5.6 5.88 0.05 50 10 4 0.96
TZS4691 5.89 6.2 6.51 0.05 45 10 5 0.95
TZS4692 6.46 6.8 7.14 0.05 35 10 5.1 0.9
TZS4693 7.125 7.5 7.875 0.05 31.8 10 5.7 0.75
TZS4694 7.79 8.2 8.61 0.05 29 1 6.2 0.5
TZS4695 8.265 8.7 9.135 0.05 27.4 1 6.6 0.1
TZS4696 8.645 9.1 9.555 0.05 26.2 1 6.9 0.08
TZS4697 9.5 10 10.5 0.05 24.8 1 7.6 0.1
TZS4698 10.45 11 11.55 0.05 21.6 0.05 8.4 0.11
TZS4699 11.4 12 12.6 0.05 20.4 0.05 9.1 0.12
TZS4700 12.35 13 13.65 0.05 19 0.05 9.8 0.13
TZS4701 13.3 14 14.7 0.05 17.5 0.05 10.6 0.14
TZS4702 14.25 15 15.75 0.05 16.3 0.05 11.4 0.15
TZS4703 15.2 16 16.8 0.05 15.4 0.05 12.1 0.16
TZS4704 16.15 17 17.85 0.05 14.5 0.05 12.9 0.17
TZS4705 17.1 18 18.9 0.05 13.2 0.05 13.6 0.18
TZS4706 18.05 19 19.95 0.05 12.5 0.05 14.4 0.19
TZS4707 19 20 21 0.05 11.9 0.01 15.2 0.2
TZS4708 20.9 22 23.1 0.05 10.8 0.01 16.7 0.22
TZS4709 22.8 24 25.2 0.05 9.9 0.01 18.2 0.24
TZS4710 23.75 25 26.25 0.05 9.5 0.01 19 0.25
TZS4711 25.65 27 28.35 0.05 8.8 0.01 20.4 0.27
TZS4712 26.6 28 29.4 0.05 8.5 0.01 21.2 0.28
TZS4713 28.5 30 31.5 0.05 7.9 0.01 22.8 0.3
TZS4714 31.35 33 34.65 0.05 7.2 0.01 25 0.33
TZS4715 34.2 36 37.8 0.05 6.6 0.01 27.3 0.36
TZS4716 37.05 39 40.95 0.05 6.1 0.01 29.6 0.39
TZS4717 40.85 43 45.15 0.05 5.5 0.01 32.6 0.43
Notes
(1) Tolerancing and voltage designation (V ). The type numbers shown have a standard tolerance of ± 5 % on the nominal zener voltage.
Z
(2) Maximum Zener current ratings (I ). Maximum Zener current ratings are based on maximum Zener voltage of the individual units
ZM
(3) Reverse leakage current (I ). Reverse leakage currents are guaranteed and measured at V as shown on the table.
R R
(4) Maximum voltage change (ΔV ). Voltage change is equal to the difference between V at 100 μA and V at 10 μA.
Z Z Z

Rev. 1.9, 25-Nov-2021 2 Document Number: 85613

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

600 15
Ptot - Total Power Dissipation (mW)

TKVZ - Temperature Coefficient

500
10
400

of VZ (10-4/K)
300 5

IZ = 5 mA
200
0
100

0 -5
0 40 80 120 160 200 0 10 20 30 40 50
95 9602 Tamb - Ambient Temperature (°C) 95 9600 VZ - Z-Voltage (V)

Fig. 1 - Total Power Dissipation vs. Ambient Temperature Fig. 4 - Temperature Coefficient of VZ vs. Z-Voltage

1000 200
CD - Diode Capacitance (pF)
VZ - Voltage Change (mV)

150
100 VR = 2 V
Tj = 25 °C
100
IZ = 5 mA
10
50

1 0
0 5 10 15 20 25 0 5 10 15 20 25
95 9598 VZ - Z-Voltage (V) 95 9601 VZ - Z-Voltage (V)

Fig. 2 - Typical Change of Working Voltage under Operating Fig. 5 - Diode Capacitance vs. Z-Voltage
Conditions at Tamb = 25 °C

1.3 100
VZtn = VZt/VZ (25 °C)
VZtn - Relative Voltage Change

IF - Forward Current (mA)

1.2 10
TKVZ = 10 x 10-4/K
-4
8 x 10 /K
Tj = 25 °C
6 x 10-4/K
1.1 1
4 x 10-4/K
2 x 10-4/K
1.0 0 0.1
- 2 x 10-4/K
- 4 x 10-4/K 0.01
0.9

0.8 0.001
- 60 0 60 120 180 240 0 0.2 0.4 0.6 0.8 1.0
95 9599 Tj - Junction Temperature (°C) 959605 VF - Forward Voltage (V)

Fig. 3 - Typical Change of Working Voltage vs. Fig. 6 - Forward Current vs. Forward Voltage
Junction Temperature

Rev. 1.9, 25-Nov-2021 3 Document Number: 85613

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors

100 50

Ptot = 500 mW
80 40
Tamb = 25 °C
Ptot = 500 mW

IZ - Z-Current (mA)
IZ - Z-Current (mA)

Tamb = 25 °C
60 30

40 20

20 10

0 0
0 4 6 8 12 20 15 20 25 30 35
95 9604 VZ - Z-Voltage (V) 95 9607 VZ - Z-Voltage (V)

Fig. 7 - Z-Current vs. Z-Voltage Fig. 8 - Z-Current vs. Z-Voltage

1000
rZ - Differential Z-Resistance (Ω)

IZ = 1 mA
100

5 mA

10 10 mA

Tj = 25 °C
1
0 5 10 15 20 25
95 9606 VZ - Z-Voltage (V)

Fig. 9 - Differential Z-Resistance vs. Z-Voltage

Zthp - Thermal Resistance for Pulse Cond. (K/W)

1000

tp/T = 0.5
100
tp/T = 0.2

Single Pulse RthJA = 300 K/W

T = Tj max. - Tamb
10 tp/T = 0.01
tp/T = 0.1 tp/T = 0.02

tp/T = 0.05
iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj)
1
10-1 100 101 102
tp - Pulse Length (ms) 95 9603

Fig. 10 - Thermal Response

Rev. 1.9, 25-Nov-2021 4 Document Number: 85613

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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PACKAGE DIMENSIONS in millimeters (inches): QuadroMELF SOD-80

Cathode identification

as 67)
.0
(0

s
7
1.

gl
1.6 (0.063)
1.4 (0.055)
> R3 (R0.118)
glass
0.47 (0.019) max.

3.7 (0.146)
3.3 (0.130)

The gap between plug and glass can

be either on cathode or anode side

Foot print recommendation: 2.5 (0.098) max.

1.25 (0.049) min.

2 (0.079) min.
5 (0.197) ref.

96 12071

Rev. 1.9, 25-Nov-2021 5 Document Number: 85613

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023 1 Document Number: 91000