Project Report
on
PN Junction diode characteristics
Name of the student: xxxxxx
RollNumber:23261A0465
Branch: ECE-2
B. TECH SEM-I
Academic year:2023-2024
Guided
By
Dr. Ch. Srinivasu
Asst. Professor, Department of Physics and Chemistry
MAHATMA GANDHI INSTITUTE OF TECHNOLOGY
(Autonomous)
Chaitanya Bharathi(P.O.),Gandipet,Hyderabad–500075.
CERTIFICATE
This is to certify that project entitled “PN Junction diode characteristics ”
has been submitted to Department of Physics and Chemistry, Mahatma
Gandhi Institute of Technology for the partial fulfilment of the
requirement of B. Tech I- Sem (2023-2024) Applied Physics laboratory
course done by “xxxxx” bearing the Roll Number 23261A0465.
(ProjectGuide)
Dr. Ch. Srinivasu
Department of Physics and Chemistry.
List of Contents: Page No.
1. Aim of the Project 01
2. Components 01
3. Background theory 01
4.Circuit diagram 03
5. Procedure 04
6. observations 04
7. Calculations and result 05
VI CHARACTERISTICS OF PN JUNCTION DIODE
Aim: To study the V-I characteristics of PN junction diode
Apparatus: A p-n junction diode, 30V battery, High resistance rheostat, 0-30V
voltmeter, 0−100mA ammeter, 0-100µAammeter, and connecting wires
Theory: PN junction diode is a two terminal electronic device (Di-electrode −→
Diode.) that allows current in only one direction. The diode is formed by doping a
semiconductor (like silicon or germanium) with trivalent impurity (e.g. Boron or
Aluminum) from one end to form p-type region and with pentavalent impurity like
Phosphorous from the other end to form n-type region on the other end. The
metal contacts taken out from p-region and n-region are called anode and cathode
respectively. There are three possible biasing conditions and two operating regions
for the typical PN-Junction Diode, they are: zero bias, forward bias and reverse
bias. When no voltage is applied across the PN junction diode then the electrons
will diffuse to P-side and holes will diffuse to N-side through the junction and they
combine with each other. Therefore, the acceptor atom close to the P-type and
donor atom near to the N-side are left unutilized. An electronic field is generated
by these charge carriers. This opposes further diffusion of charge carriers. Thus, no
movement of the region is known as depletion region or space charge.
Zero Biased PN Junction Diode :
When a diode is connected in a Zero Bias condition, no external potential energy is
applied to the PN junction. The potential barrier that now exists discourages the
diffusion of any more majority carriers across the junction. However, the potential
barrier helps minority carriers (few free electrons in the P-region and few holes in
the N-region) to drift across the junction. Then an Equilibrium or balance will be
established when the majority carriers are equal and both moving in opposite
directions, so that the net result is zero current flowing in the circuit. When this
occurs, the junction is said to be in a state of Dynamic Equilibrium. The minority
carriers are constantly generated due to thermal energy so this state of equilibrium
can be broken by raising the temperature of the PN junction causing an increase in
the generation of minority carriers, thereby resulting in an increase in leakage
current but an electric current cannot flow since no circuit has been connected to
the PN junction
Forward Biased PN Junction Diode :
When a diode is connected in a Forward Bias condition, a negative voltage is
applied to the Ntype material and a positive voltage is applied to the P-type
material. If this external voltage becomes greater than the value of the potential
barrier, approx. 0.7 volts for silicon and 0.3 volts for germanium, the potential
barriers opposition will be overcome and current will start to flow. This is because
the negative voltage pushes or repels electrons towards the junction giving them
the energy to cross over and combine with the holes being pushed in the opposite
direction towards the junction by the positive voltage. This results in a
characteristics curve of zero current flowing up to this voltage point, called the
knee on the static curves and then a high current flow through the diode with little
increase in the external voltage as shown below.
Since the diode can conduct infinite current above this knee point as it effectively
becomes a short circuit, therefore resistors are used in series with the diode to
limit its current flow. Exceeding its maximum forward current specification causes
the device to dissipate more power in the form of heat than it was designed for
resulting in a very quick failure of the device.
Reverse Biased PN Junction Diode
When a diode is connected in a Reverse Bias condition, a positive voltage is
applied to the N-type mate-rial and a negative voltage is applied to the P-type
material. The positive voltage applied to the N-type material attracts electrons
towards the positive electrode and away from the junction, while the holes in the
P-type end are also attracted away from the junction towards the negative
electrode. The net result is that the depletion layer grows wider due to a lack of
electrons and forms a potential barrier which prevent the current from flowing
through the semiconductor material. This condition represents a high resistance
value to the PN junction and practically zero current flows through the junction
diode with an increase in bias voltage. However, a very small leakage current does
flow through the junction which can be measured in micro-amperes.
Circuit diagram:
Model graph:
Breadbroad connections:
Procedure:
Forward Bias Condition:
1. Connect the circuit as shown in Fig.1(PN Junction diode with
ammeter in series with the diode).
2. Initially vary Regulated Power Supply (RPS) voltage Vs in steps of 3 V.
3. Tabulate different forward currents obtained for different forward
voltages.
4. Plot the V-I characteristics
Reverse Bias Condition:
1. Connect the circuit as shown in Fig.2.
2. Vary Vs in the Regulated Power Supply (RPS) gradually in steps of 3V.
3. Tabulate different reverse currents obtained for different reverse
voltages
4. Plot the V-I characteristics
Observation Table:
Si.No Vs Vf(v) If(mA)
1 0.2 0.2 0
2 0.4 0.395 0
3 0.6 0.48 0.12
4 0.8 0.503 0.297
5 1 0.516 0.484
6 1.5 0.534 0.966
7 2 0.544 1.46
8 3 0.558 2.44
9 4 0.566 3.43
10 5 0.573 4.43
Graph:
If(mA)
5
4.5
4
3.5
CURRENT IN mA
3
2.5
2
1.5
1
0.5
0
0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6
VOLTAGE IN V
Result: Thus, the VI characteristics of both PN junction diode and Zener
diode are verified
References :-
1) Thinker Cad
2) Virtual Labs
3) Applied Physics Lab manual
Rubrics for Evaluation (10 Marks)
VI CHARACTERISTICS OF PN JUNCTION DIODE
Particulars Marks Marks
allotted obtained
Principle & Procedure write up 2
Conduct of experiment & Result 6
Viva voce 2
Total 10
Signature of the student Signature of the Examiner
