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2N3055 NPN Transistor Specifications

This document provides technical specifications for an NPN power silicon transistor. It includes maximum ratings, electrical characteristics, thermal characteristics, and safe operating area test conditions.

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0% found this document useful (0 votes)
63 views2 pages

2N3055 NPN Transistor Specifications

This document provides technical specifications for an NPN power silicon transistor. It includes maximum ratings, electrical characteristics, thermal characteristics, and safe operating area test conditions.

Uploaded by

alemrajabi.safat
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

TECHNICAL DATA

NPN POWER SILICON TRANSISTOR


Qualified per MIL-PRF-19500/407

Devices Qualified Level

JAN
2N3055
JANTX

MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage VCEO 70 Vdc
Collector-Base Voltage VCBO 100 Vdc
Emitter-Base Voltage VEBO 7.0 Vdc
Base Current IB 7.0 Adc
Collector Current IC 15 Adc
Total Power Dissipation @ TA = 250C (1) 6.0 W
PT
@ TC = 250C (2) 117 W
Operating & Storage Temperature Range 0
Top, Tstg -65 to +200 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit TO-3*
Thermal Resistance, Junction-to-Case RθJC 1.5 0
C/W (TO-204AA)
1) Derate linearly @ 34.2 mW/0C for TA > +250C
2) Derate linearly @ 668 mW/0C for TC > +250C
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO 70 Vdc
IC = 200 mAdc
Collector-Emitter Breakdown Voltage
V(BR)CER 80 Vdc
IC = 200 mAdc, RBE = 100Ω
Collector-Emitter Breakdown Voltage
V(BR)CEX 90 Vdc
VBE = -1.5 Vdc, IC = 200 mAdc
Collector-Emitter Cutoff Current
ICEO 1.0 mAdc
VCE = 60 Vdc
Collector-Emitter Cutoff Current
ICEX 1.0 mAdc
VBE = -1.5 Vdc; VCE = 100 Vdc
Emitter-Base Cutoff Current
IEBO 1.0 mAdc
VEB = 7.0 Vdc

6 Lake Street, Lawrence, MA 01841 120101


1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 1 of 2
2N3055 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)


Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 0.5 Adc, VCE = 4.0 Vdc 40
hFE 20 60
IC = 4.0 Adc, VCE = 4.0 Vdc
5.0
IC = 10 Adc, VCE = 4.0 Vdc
Collector-Emitter Saturation Voltage
0.75
IC = 4.0 Adc, IB = 0.4 Adc VCE(sat) Vdc
2.0
IC = 10 Adc, IB = 3.3 Adc
Base-Emitter Saturation Voltage
VBE(sat) 1.4 Vdc
IC = 4.0 Adc, VCE = 4.0 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio hfe 8.0 40
IC = 4.0 Adc, VCE = 4.0 Vdc, f = 100 kHz
Output Capacitance
Cobo 700 pF
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
µs
t
on 6.0
VCC = 30 Vdc; IC = 4.0 Adc; IB1= 0.4 Adc
Turn-Off Time
µs
t
off 12
VCC = 30 Vdc; IC = 4.0 Adc; IB1 = -IB2 = 0.4 Adc
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 7.8 Vdc, IC = 15 Adc
Test 2
VCE = 70 Vdc, IC = 1.67 Adc
Switching Tests
TA = +250C; duty cycle ≤ 10%; RS ≤ 0.1 Ω
Test 1
tP = 5.0 ms; RBB1 = 2.0 Ω; VBB1 ≥ 10 Vdc; RBB2 = 100 Ω; VCC ≥ 10 Vdc; VBB2 = 1.5 Vdc; IC = 15 Adc
Test 2
tP = 20 ms; RBB1 = 30 Ω; VBB1 ≥ 10 Vdc; RBB2 = 100 Ω; VCC ≥ 10 Vdc; VBB2 = 1.5 Vdc; IC = 3.8 Adc

6 Lake Street, Lawrence, MA 01841 120101


1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 2 of 2

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