Transistor

1. Why biasing is required?List different methods of biasing a Transistor

2.What do you mean by the quiescent point of a transistor amplifier? what are the factors
determining the choice of the Q-point?What are the variables for the stability factor?

3.How does a transistor work as an amplifier and switch?

4.What is cut off frequency? What is lower 3dB and upper 3dB cut off frequency?

5. Why CE is preferred over CB and CC?What are the application of CB configuration?

6. Explain the performance of transistor as an amplifier with an expression of voltage gain

and current gain .

7. Calculate the stability factors S,S’,S’’ of CE mode of a transistor

8.Explain Load line and the operating points with suitable characteristic curve

9.What is operating point? Why is it necessary to stabilize operating point of a transistor

amplifier?Explain its physical significance

10.Define stability factors .What is the significance of stability factors in transistor operation?

13.for the common base circuit shown in Fig. below, determine IC and VCB . Assume
the transistor to be of silicon.

14 . What is the current amplification factor of a transistor circuit in CB, CE & CC

configuration?

15.Derive the relation between three amplification factors?

16.Why the width of the base region of a transistor is kept very small compared to other
regions?

17. In a common base connection, current amplification factor is 0.9. If the emitter current is
1mA, determine the value of base current.

18.a. Explain why ICEO >> ICBO?

 b.What is the working principle of n-p-n transistor?

19.Draw the circuit diagram for self-biased configuration considering an n-p-n transistor in
CE configuration

b.Derive the expression for its stability factors.

20 a.Draw the circuit diagram of common-emitter transistor

21.a.Define the stability factor and thermal run-away.

b.(ii) Draw and explain the operation of transistor connected in CB mode.

22.a. Find the α rating of the transistor shown in Fig. Hence determine the value of IC using
both α and β rating of the transistor.

23.a. Explain the performance of transistor as an amplifier with an expression of voltage gain
and current gain .

24. a.Determine VCB in the transistor circuit shown in Fig. The transistor is of silicon and has
β = 150.
b. What are the different regions of operation of transistor?
 FET( JFET/MOSFET)

1.Sketch the ohmic region in drain characteristics of JFET?Compare between JFET and BJT.
2. Define Drain resistance and trans-conductance

3.Explain constructional features of a MOSFET.

4.Compare between JFET and MOSFET.

5.What do you understand by pinch off voltage?

6.Draw the transfer characteristic for n-channel depletion type JFET.

7. write down advantages of MOSFET.

8. What are the main constructional differences between a MOSFET and a BJT?

9. What are the disadvantages of JFET?

10. Explain the drain characteristics of JFET with suitable diagram

11.Describe the construction of N-channel MOSFET with proper diagram.

12. What are the different types of MOSFET. Draw the circuit symbol.

13. Explain working principle of Enhancement type MOSFET

14. Why FET is called voltage controlled device?

15.Draw the transfer characteristics and derive the expression of trans-conductance.

16.Define JFET parameters.

17.a.Compare between JFET and BJT.

b.Why FET is called voltage controlled device?

18.a. What is IGFET?

b.Compare between n-channel and p-channel MOSFETs

19.)In a JFET for Vgs= 0v and Vds= 2.5v the drain current appears to be 13.5 mA. What is the
value of IDSS. If Vdsis increased to 3 volt and and pinch off voltage is -2v, What is value of Id?

20 i)For a certain D-MOSFET, IDSS = 10 mA and VGS (off) = – 8V.

(i) Is this an n-channel or a p-channel ?
(ii) Calculate ID at VGS = – 3V.
(iii) Calculate ID at VGS = + 3V.
21.)Determine the values of ID and VDS for the circuit shown in Fig. The data sheet for this
particular MOSFET gives ID (on) = 10 mA when VGS = VDS.
(ii) What are the advantages of MOSFET.

22.(i) What are the different types of MOSFET

ii) Explain working principle of Enhancement and Depletion type MOSFET.

23. (i)Determine the drain-to-source voltage (VDS) in the circuit shown in Fig. if VDD = +18V
and RD = 620Ω. The MOSFET data sheet gives VGS (off) = – 8V and IDSS = 12 mA.

(ii) What is the main difference between depletion type and enhancement type MOSFET?
(iii) Draw the symbol of JFET and MOSFET.
24. (i) What do you mean by pinch off voltage?
(ii) Draw the transfer and drain characteristics of FET.
25. (i) Why FET is called unipolar device.
(ii) Explain the different regions of the output characteristics of a JFET.
(iii) Discuss the merit and demerits of FETs.
25. (i) Describe the construction of N-channel MOSFET with proper diagram.

27. (i) Describe the working principle of JFET with proper diagram.
(ii) What is meant by drain characteristics of FET? Draw it.
29. (i) A JFET has following parameters:
IDSS=9mA, Vp =-3v, Vgs= -1v

Calculate the value of Id and transconductance (gm).

(ii) What is the main difference between depletion type and enhancement
type MOSFET?
30. (i) Compare between n-channel and p-channel MOSFETs.
(ii) What is pinch off point of MOSFET?
 31. (i)Explain the 4 distinct regions of the output characteristics of a JFET.
(ii) Define Transconductance, AC drain resistance, Amplification factor of JFET.
(iii) Explain why FET is called unipolar device.
32. (i) Explain the operation of
nchannelenhancementtypeMOSFETwithtransferanddraincharacteristics.

(ii) Explain the significance of the term “field effect” in the name of FET.
33. (i) Explain the significance of the terms gate, drain, source, channel in context of
JFET.
(ii)Describe the construction of N-channel MOSFET with proper diagram.
34. (i) Explain how the wedge shaped depletion layer controls the drain current of FET.
(ii) In a JFET for Vgs= 0v and Vds= 2.5v the drain current appears to be 13.5 mA.
What is the value of IDSS. If Vdsis increased to 3 volt and and pinch off voltage is -2v, What
is value of Id?
35. (i)Derive the transfer characteristics of FET from it’s drain characteristics. What is
the significance of transfer characteristics?
(ii) Discuss the merit and demerits of FETs.
36. (i) Draw the circuit diagrams of three different configurations of FET.
(ii) An n-channel JFET has to IDSS= 4 milliamps and VP = -4 V. Find the drain current
for Vgs = -2V. If the transconductance of a JFET with the same IDSS at VGS= 0 is 4
milimho,find the pinch off voltage.

OP-AMP
1.What is slew rate and CMRR.State the characteristics of ideal opamp.

2. Define the following electrical parameters: input offset voltage, input offset current, input
bias current, CMRR .

3.Explain op-amp as an integrator circuit with proper circuit diagram.

4.Write a short note on op-amp as a comparator

5.Explain about the virtual ground concept

6.Draw the pin configuration of the IC 741 and explain each pin?

7.Draw a neat circuit of an integrator circuit. Explain the functioning with the input-output
Waveforms?

8.Derive the expression of differentiator with suitable circuit diagram.

9.Calculate the voltage gain of an inverting amplifier with necessary diagram.

10.How an opamp works as an summing amplifier Why voltage follower circuit is called
unity gain buffer?
11. Explain the non-inverting amplifier configuration and find its gain.

12.Draw the internal block diagram of an op-amp

13. (i) What is buffer?

(ii) What is the difference between open & close loop Op-Amp.
14. (i) Define the following parameters in connection to op-amp:
a) CMRR
b) Slew rate.

(ii) Draw the pin configuration of the IC 741 and mention each pin.
15. Calculate the output voltage of the circuit, shown below where V 1 = 40 mV and V2 =20mV.

16. An OPAMP inverting amplifier has an input resistor of 10kΩ and a feedback resistor of 50kΩ. If
the input voltage is 0.5V, find the output voltage and the input current.
17. (i) Explain op-amp as an comparator circuit with proper circuit diagram.
 27. (i) Explain the concept of virtual ground in an Op-Amp.
(ii)Explain the operation of an Op-Amp as a non-inverting amplifier.
(iii) An input of 3V is fed to a non-inverting terminal of an Op-Amp. The amplifier has Ri=10kΩ and
Rf =10kΩ. Find the output voltage.
28. (i)Explain differentiator circuit using OPAMP with circuit diagram and derivation for output
voltage expression. Also give its application.
29. (i) What is an op-amp?
(ii) Write the characteristics of an ideal op-amp and draw the equivalent circuit of an op- amp.
(iii) List and explain the open-loop op-amp configurations.
30. (i) Explain voltage follower circuit in detail with circuit diagram and derivations.
(ii) Compare the characteristics of ideal and practical OPAMPs.
31. (i)Explain the operation of an Op-Amp as an adder circuit.
(ii)Determine the output voltage of the circuit shown in the figure below.

32. (i) Explain the operation of OPAMP as a subtractor circuit.

(ii) Define common-mode rejection ratio (CMRR) and explain the significance of a relatively large
value of CMRR.
(iii) Why is it necessary to use an external offset voltage-compensating network with practical op-amp
circuits?

(iii) State the characteristics of an ideal OP AMP.

33. Write a note on the use of an OP AMP as a differentiator and an integrator.
34. (i) Explain voltage follower circuit with circuit diagram and derivations.
(ii) Explain the operation of an op-amp as subtractor.
18. Write a note with related mathematical derivation of Op-Amp as an inverting and non-inverting amplifier
19. (i) Define virtual ground.
(ii)
20. What are the different properties of an OPAMP?

21. (i) What is an operational amplifier?

(ii) Mention a few application of OP AMP.
22. (i)Define the following parameters of op-amp:
a) CMRR
b) Slew rate.
(ii)What are the desirable properties of an ideal OPAMP.
23. (i)Explain inverting averaging amplifier circuit in detail with circuit diagram and derivations.
24. (i)Mention an IC number of OPAMP.
(ii) Draw the PIN diagram and explain the significance of each PIN.
25. (i)Explain the operation of OPAMP as an integrator.
26. (i)Explain the operation of OPAMP as a comparator.

Electrical DC networks part)

2. (i) Using the method of superposition theorem, determine the current through the 6Ω resistors
for the circuit shown in Fig. Prove that the theorem is not applicable to measure the power from
the same circuit.

3. (i) Write down the statement of Thevenin’s theorem.

(ii)Find "the current through resistance ( R ) for the network shown in the figure using the superposition

theorem.
3. (i) Find the current through 5 Ω Resistor using Thevenin’s Theorem
in the figure below.
4.
 ii.

7. (i)Using Thevenin’s equivalent circuit find out the current in 6Ω resistance.

(ii)Find current through 5Ω resistor in the circuit using Norton’s theorem.

8. (i) Show how the matrix form of Ohm’s law can be achieved using mesh analysis. Use a suitable
example network.
(ii)Solve the circuit shown in fig using the mesh method of analysis and determine the mesh
currents I1,I2 and I3. Evalute the power developed in the 10V voltage source.

9. (i) For the circuit shown below, find the potential difference between a and d:

(ii) Find the value of E and I for the circuit shown in figure.

(iii) Write down the statement of Superposition theorem.

10. (i)Find the Thevenin’s equivalent circuit of the following figure between the terminals X-Y. Calculate
the value of current through R, if R=2Ω.
 (ii)For the circuit shown in Figure determine equivalent source current and source resistance across
A-B.

11. (i)Write the statement of Norton’s theorem.

(ii) Explain why Thevenin’s theorem and Norton’s theorem are called dual theorem.
iii)Find the currents through RBC, RCD, RBD in the following circuit: