JMnic Product Specification
Silicon NPN Power Transistors 2SC4706
DESCRIPTION
・With TO-3PN package
・High voltage switching transistor
APPLICATIONS
・For switching regulator and general
purpose applications
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 900 V
VCEO Collector-emitter voltage Open base 600 V
VEBO Emitter-base voltage Open collector 7 V
IC Collector current 14 A
ICM Collector current-peak 28 A
IB Base current 7 A
PC Collector power dissipation TC=25℃ 130 W
Tj Junction temperature 150 ℃
Tstg Storage temperature -55~150 ℃
JMnic Product Specification
Silicon NPN Power Transistors 2SC4706
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 600 V
ICBO Collector cut-off current VCB=800V; IE=0 0.1 mA
IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA
hFE DC current gain IC=7A ; VCE=4V 10 25
VCE(sat) Collector-emitter saturation voltage IC=7A ; IB=1.4A 0.5 V
VBE(sat) Base-emitter saturation voltage IC=7A ; IB=1.4A 1.2 V
fT Transition frequency VCE=12V;IE=-1.5A 6 MHz
COB Collector output capacitance VCB=10V;f=1MHz 160 pF
Switching times
ton Turn-on time 1.0 μs
IC=7A;RL=35.7Ω
ts Storage time IB1=1.05A;IB2=-3.5A 5.0 μs
VCC=250V
tf Fall time 0.7 μs
2
JMnic Product Specification
Silicon NPN Power Transistors 2SC4706
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
JMnic Product Specification
Silicon NPN Power Transistors 2SC4706
