DISCRETESEMICONDUCTORS

DATASHEET

book,halfpage

BZX84series
Voltageregulatordiodes
Productspecification 2003Apr1
Supersedesdataof1999May18 0
PhilipsSemiconductors Productspecification

Voltageregulatordiodes BZX84series

FEATURES PINNING
·Totalpowerdissipation:max.250mW PIN DESCRIPTION
·Threetoleranceseries:±1%,±2%andapprox.±5%
1 anode
·Workingvoltagerange:nom.2.4to75V(E24range)
2 notconnected
·Non-repetitivepeakreversepowerdissipation:
max.40W. 3 cathode

APPLICATIONS
·Generalregulationfunction
s. handbook,halfpage2 1

DESCRIPTION
Low- 2
1
n
powervoltageregulatordiodesinsmallSOT23
.
plasticSMDpackages. c
ThediodesareavailableinthenormalizedE24±1% 3
.
(BZX84-A),±2%(BZX84-B)andapprox.±5%(BZX84-C) 3
tolerancerange.Theseriesconsistsof37typeswit Topvi MAM
h ew 243

nominalworkingvoltagesfrom2.4to75V.

Fig.1Simplifiedoutline(SOT23)andsymb
ol.

2003Apr10 2
PhilipsSemiconductors Productspecification

Voltageregulatordiodes BZX84series

MARKIN
G

MARKING TYPE MARKING MARKING MARKING

TYPE TYPE
TYPE
CODE(1) NUMBER CODE(1) CODE(1) NUMBER CODE(1)
NUMBER NUMBER

MarkingcodesforBZX84-A2V4toBZX84-A75

BZX84-A2V4 Y50or∗50 BZX84-A6V2 Y60or∗60 BZX84-A16 BZX84-A43 Y80or∗C5

Y70

BZX84-A2V7 Y51or∗51 BZX84-A6V8 Y61or∗61 BZX84-A18 BZX84-A47

Y71 Y81
BZX84-A3V0 Y52or∗52 BZX84-A7V5 Y62or∗62 BZX84-A20 Y72or∗C2 BZX84-A51 Y82or∗C6

BZX84-A3V3 BZX84-A8V2 Y63or∗63 BZX84-A22 BZX84-A56

Y53 Y73 Y83

BZX84-A3V6 Y54or∗C1 BZX84-A9V1 Y64or∗64 BZX84-A24 BZX84-A62

Y74 Y84

BZX84-A3V9 Y55or∗55 BZX84-A10 Y65or∗65 BZX84-A27 Y75or∗75 BZX84-A68

Y85

BZX84-A4V3 Y56or∗56 BZX84-A11 Y66or∗04 BZX84-A30 BZX84-A75 Y86or∗86

Y76

BZX84-A4V7 Y57or∗57 BZX84-A12 Y67or∗67 BZX84-A33 − −

Y77
BZX84-A5V1 Y58or∗58 BZX84-A13 Y68or∗C0 BZX84-A36 Y78or∗C3 − −
BZX84-A5V6 Y59or∗59 BZX84-A15 Y69or∗69 BZX84-A39 Y79or∗C4 − −

MarkingcodesforBZX84-B2V4toBZX84-B75
BZX84-B2V4 Z50or∗Z0 BZX84-B6V2 Z60or∗R5 BZX84-B16 Z70or∗70 BZX84-B43 Z80or∗S5
BZX84-B2V7 Z51or∗Z1 BZX84-B6V8 Z61or∗R6 BZX84-B18 Z71or∗71 BZX84-B47 Z81or∗S6
BZX84-B3V0 Z52or∗S1 BZX84-B7V5 Z62or∗R8 BZX84-B20 Z72or∗72 BZX84-B51 Z82or∗S9
BZX84-B3V3 Z53or∗S2 BZX84-B8V2 Z63or∗R9 BZX84-B22 Z73or∗73 BZX84-B56 Z83or∗R0
BZX84-B3V6 Z54or∗S3 BZX84-B9V1 Z64or∗T1 BZX84-B24 Z74or∗74 BZX84-B62 Z84or∗R3
BZX84-B3V9 Z55or∗S4 BZX84-B10 Z65or∗66 BZX84-B27 Z75or∗Z5 BZX84-B68 Z85or∗R4
BZX84-B4V3 Z56or∗S7 BZX84-B11 Z66or∗Z6 BZX84-B30 Z76or∗Z4 BZX84-B75 Z86or∗R7
BZX84-B4V7 Z57or∗S8 BZX84-B12 Z67or∗Z7 BZX84-B33 Z77or∗Y1 − −
BZX84-B5V1 Z58or∗R1 BZX84-B13 Z68or∗Z8 BZX84-B36 Z78or∗Y2 − −
BZX84-B5V6 Z59or∗R2 BZX84-B15 Z69or∗Z9 BZX84-B39 Z79or∗S0 − −

MarkingcodesforBZX84-C2V4toBZX84-C75
Note
BZX84-C2V4 Z11or∗T3 BZX84-C6V2 BZX84-C16 BZX84-C43 Y15or∗B4
1.∗=p:MadeinHongKong. Z4∗ Y5∗

BZX84-C2V7 Z12or∗T4
∗=t:MadeinMalaysia. BZX84-C6V8 BZX84-C18 BZX84-C47 Y16or∗B5
Z5∗ Y6∗

∗=W:MadeinChina.
BZX84-C3V0 Z13or∗T9 BZX84-C7V5 BZX84-C20 BZX84-C51 Y17or∗B7
Z6∗ Y7∗

2003Apr10
BZX84-C3V3 3
Z14or∗B1 BZX84-C8V2 BZX84-C22 BZX84-C56 Y18or∗B8
Z7∗ Y8∗

BZX84-C3V6 Z15or∗B2 BZX84-C9V1 BZX84-C24 BZX84-C62 Y19or∗B9

Z8∗ Y9∗

BZX84-C3V9 Z16or∗B3 BZX84-C10 BZX84-C27 Y10or∗T2 BZX84-C68 Y20or∗B0

PhilipsSemiconductors Productspecification

Voltageregulatordiodes BZX84series

LIMITINGVALUES
InaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134
).
SYMBOL PARAMETER CONDITIONS MAX.
MIN. UNIT

IF continuousforwardcurrent − 200 mA

non- tp=100µs;squarewave; seeTables

IZSM
repetitivepeakreversecurrent Tj=25°Cpriortosurge 1and2
Ptot totalpowerdissipation Tamb=25°C;note1 − 250 mW

PZSM non-repetitivepeakreversepower tp=100µs;squarewave;

Tj=25°Cpriortosurge;seeFig.2 − 40 W
dissipation

TNote
stg storagetemperature −65 +150 °C
1.DevicemountedonanFR4printedcircuit-
Tboard.
j junctiontemperature −65 +150 °C

ELECTRICALCHARACTERISTICS
TotalBZX84-AandBandCseries
Tj=25°Cunlessotherwisespecified.

SYMBOL PARAMETER CONDITIONS

MAX. UNIT
VF forwardvoltage IF=10mA;seeFig.3 0.9 V

reversecurrent VR=1V 50 µA
BZX84-A/B/C2V4 VR=1V 20 µA
BZX84-A/B/C2V7 VR=1V 10 µA
BZX84-A/B/C3V0 VR=1V 5 µA
BZX84-A/B/C3V3 VR=1V 5 µA
BZX84-A/B/C3V6 VR=1V 3 µA
BZX84-A/B/C3V9 VR=1V 3 µA
BZX84-A/B/C4V3
VR=2V 3 µA
BZX84-A/B/C4V7
VR=2V 2 µA
BZX84-A/B/C5V1
VR=2V 1 µA
IR BZX84-A/B/C5V6
VR=4V 3 µA
BZX84-A/B/C6V2
VR=4V 2 µA
BZX84-A/B/C6V8
BZX84-A/B/C7V5 VR=5V 1 µA
BZX84-A/B/C8V2 VR=5V 700 nA
BZX84-A/B/C9V1 VR=6V 500 nA
BZX84-A/B/C10 VR=7V 200 nA
BZX84-A/B/C11
VR=8V 100 nA
BZX84-A/B/C12
VR=8V 100 nA
BZX84-A/B/C13
VR=8V 100 nA
BZX84-A/B/C15to75
VR=0.7VZnom 50 nA

2003Apr10 4
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Table1 PertypeBZX84-A/B/C2V4toA/B/C24
0j=25°Cunlessotherwisespecified.
T t i
3
A
a ps
WORKINGVOLTAGE DIFFERENTIAL
p VZ(V) RESISTANCE
gS
r
1
atIZtest=5mA rdif(Ω) NON- e em
REPETITIVE
0
TEMP.COEFF.
DIODECAP.
PEAKREVERSE r i
SZ(mV/K) Cd(pF) CURRENT ec
IZSM(A) o
Tol.approx. atIZtest=5mA
atf=1MHz; gn
at at
BZX84-
Tol.±1%(A) Tol.±2%(B)
(C)
±5% IZtest=1mA IZtest=5mA (seeFigs4and5) VR=0V attp=100µs; ud
u
Tamb=25°C l c
Axxx at
o
Bxxx t r
os
Cxxx
r
MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP.
MAX
MAX. d
. MAX.
i
5
o
d
2V4 2.37 2.43 2.35 2.45 2.2 2.6 275 600 70 100 −3.5 −1.6 0 450 6.0 e
2V7 2.67 2.73 2.65 2.75 2.5 2.9 300 600 75 100 −3.5 −2.0 0 450 6.0 s
3V0 2.97 3.03 2.94 3.06 2.8 3.2 325 600 80 95 −3.5 −2.1 0 450 6.0
3V3 3.26 3.34 3.23 3.37 3.1 3.5 350 600 85 95 −3.5 −2.4 0 450 6.0
3V6 3.56 3.64 3.53 3.67 3.4 3.8 375 600 85 90 −3.5 −2.4 0 450 6.0
3V9 3.86 3.94 3.82 3.98 3.7 4.1 400 600 85 90 −3.5 −2.5 0 450 6.0
B P
4V3 4.25 4.35 4.21 4.39 4.0 4.6 410 600 80 90 −3.5 −2.5 0 450 6.0 r
Z o
4V7 4.65 4.75 4.61 4.79 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0
X d
5V1 5.04 5.16 5.00 5.20 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0
8 u
c
5V6 5.54 5.66 5.49 5.71 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0 4 t
6V2 6.13 6.27 6.08 6.32 5.8 6.6 40 150 6 10 0.4 2.3 3.7 200 6.0 s s
p
6V8 6.73 6.87 6.66 6.94 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200 6.0 e e
7V5 7.42 7.58 7.35 7.65 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150 4.0 r c
i
8V2 8.11 8.29 8.04 8.36 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150 4.0 i f
9V1 9.00 9.20 8.92 9.28 8.5 9.6 40 100 6 15 3.8 5.5 7.0 150 3.0 e i
c
10 9.90 10.10 9.80 10.20 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90 3.0 s a
t
11 10.80 11.11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5
i
12 11.88 12.12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5 o
n
13 12.87 13.13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5
15 14.85 15.15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0
16 15.84 16.16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5
18 17.82 18.18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5
20 19.80 20.20 19.60 20.40 18.8 21.2 60 225 15 55 14.4 16.4 18.0 60 1.5
22 21.78 22.22 21.60 22.40 20.8 23.3 60 250 20 55 16.4 18.4 20.0 60 1.25
24 23.76 24.24 23.50 24.50 22.8 25.6 60 250 25 70 18.4 20.4 22.0 55 1.25
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Table2 PertypeBZX84-A/B/C27toA/B/C75
T0j=25°Cunlessotherwisespecified. t i
3
A
a ps
WORKINGVOLTAGE DIFFERENTIAL
p VZ(V) RESISTANCE
gS
r
1
atIZtest=2mA rdif(Ω) NON- e em
REPETITIVE
0
TEMP.COEFF.
DIODECAP.
PEAKREVERSE r i
SZ(mV/K) Cd(pF) CURRENT ec
IZSM(A) o
Tol.approx. at atIZtest=2mA
atf=1MHz; gn
at
BZX84-
Tol.±1%(A) Tol.±2%(B)
(C)
±5% IZtest=0.5m
A IZtest=2mA (seeFigs4and5) VR=0V attp=100µs; ud
u
Tamb=25°C l c
Axxx at
o
Bxxx t r
os
Cxxx
r
MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP.
MAX
MAX. d
. MAX.
i
6
o
d
27 26.73 27.27 26.50 27.50 25.1 28.9 65 300 25 80 21.4 23.4 25.3 50 1.0 e
30 29.70 30.30 29.40 30.60 28.0 32.0 70 300 30 80 24.4 26.6 29.4 50 1.0 s
33 32.67 33.33 32.30 33.70 31.0 35.0 75 325 35 80 27.4 29.7 33.4 45 0.9
36 35.64 36.36 35.30 36.70 34.0 38.0 80 350 35 90 30.4 33.0 37.4 45 0.8
39 38.61 39.39 38.20 39.80 37.0 41.0 80 350 40 130 33.4 36.4 41.2 45 0.7
43 42.57 43.43 42.10 43.90 40.0 46.0 85 375 45 150 37.6 41.2 46.6 40 0.6
B P
47 46.53 47.47 46.10 47.90 44.0 50.0 85 375 50 170 42.0 46.1 51.8 40 0.5 r
Z o
51 50.49 51.51 50.00 52.00 48.0 54.0 90 400 60 180 46.6 51.0 57.2 40 0.4
X d
56 55.44 56.56 54.90 57.10 52.0 60.0 100 425 70 200 52.2 57.0 63.8 40 0.3
8 u
c
62 61.38 62.62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3 4 t
68 67.32 68.68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25 s s
p
75 74.25 75.75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2 e e
r c
i
i f
e i
c
s a
t
i
o
n
PhilipsSemiconductors Productspecification

Voltageregulatordiodes BZX84series

THERMALCHARACTERISTIC
S
SYMBOL PARAMETER CONDITIONS
VALUE UNIT

Rthj-tp thermalresistancefromjunctiontotie-point
330 K/W
Note
R1.DevicemountedonanFR4printedcircuit-
thj-a thermalresistancefromjunctiontoambient note1
500 K/W
board.

2003Apr10 7
PhilipsSemiconductors Productspecification

Voltageregulatordiodes BZX84series

GRAPHICALDAT
A

MBG MBG
801 781
103 300
handbook,half handbook,half
page page

IF
PZSM
(mA)
(W)

200
102

10 100
(2)

1
10−1 1 0 0 VF( 1
duration(ms) . V)
0.6 8
(1)Tj=25°C(priortosurge).
(2)Tj=150°C(priortosurge
).
Tj=25°
C.
Fig.2 Maximumpermissiblenon- Fig.3
repetitivepeak Forwardcurrentasafunctionofforward
voltage;typicalvalues.
reversepowerdissipationversusduration.

MBG MBG
0 783 10 782
handbook,half handbook,half
page page
SZ SZ
(mV 4 (mV
/K) V /K)
3
9
− 5 V
1 3
V 1
7
9 3 V
8
V 5
V 6
6 6
2 V
V 2
5
− 0 8 5
V
2 3V V
1
3
3 V 6
0 4
V
7
− 2V −
30 4 50 4 8 16
IZ(m
2V
A)
7 20

IZ(mA)
BZX84-A/B/C2V4toA/B/C4V3. BZX84-A/B/C4V7toA/B/C12.
Tj=25to150°C. Tj=25to150°C.

Fig.4 Fig.5
Temperaturecoefficientasafunctionof Temperaturecoefficientasafunctionof
workingcurrent;typicalvalues. workingcurrent;typicalvalues.

2003Apr10 8
PhilipsSemiconductors Productspecification

Voltageregulatordiodes BZX84series

PACKAGEOUTLIN
E
Plasticsurfacemountedpackage;3leads SOT23

D B E A X

HE vMA

A
1
1 2 c

e1 bp wMB Lp

e detailX

0 1 2mm

sc
al
e

DIMENSIONS(mmaretheoriginaldimen
sions) A
U A 1 c D E e e1 HE Lp v w
NI Q
m
T 1 a0 0 0 3 1 2 0 0
m 1 0 0 0
. x.. . . . . . . .
m . . . .
1 4 1 0 4 5 4 5
1 9 9 2 1
0 8 5 2 1 2 5 5
5
. 0 0 . . . 0 0
9 . . 8 2 1 . .
OUTLI 3 0 1 4 EUROPEA
8 9 REFERENCES 5 5 ISSUEDA
NE I EI N
TE
VERSI E JEDEC AJ PROJECTI
ON C ON
TO-236AB 97-02-28
SOT23
99-09-13
2003Apr10 9
PhilipsSemiconductors Productspecification

Voltageregulatordiodes BZX84series

DATASHEETSTATU
S
DATASHEET
LEVEL PRODUCT DEFINITION
STATUS(1) STATUS(2)(3)
Thisdatasheetcontainsdatafromtheobjectivespecificationforproduct
I Objectivedata Development development.PhilipsSemiconductorsreservestherighttochangethe
specificationinanymannerwithoutnotice.
Thisdatasheetcontainsdatafromthepreliminaryspecification.
Supplementarydatawillbepublishedatalaterdate.Philips
Preliminarydat
II Qualification Semiconductorsreservestherighttochangethespecificationwithout
a
notice,inordertoimprovethedesignandsupplythebestpossible
product.
Thisdatasheetcontainsdatafromtheproductspecification.Philips
Semiconductorsreservestherighttomakechangesatanytimeinorder
III Productdata Production toimprovethedesign,manufacturingandsupply.Relevantchangeswill
becommunicatedviaaCustomerProduct/ProcessChangeNotification
(CPCN).
Notes
1.Pleaseconsultthemostrecentlyissueddatasheetbeforeinitiatingorcompletingadesign.
2.Theproductstatusofthedevice(s)describedinthisdatasheetmayhavechangedsincethisdatasheetwas
published.ThelatestinformationisavailableontheInternetatURLhttp://
www.semiconductors.philips.com.
3.Fordatasheetsdescribingmultipletypenumbers,thehighest-
levelproductstatusdeterminesthedatasheetstatus.
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ee reasonablybeexpectedtoresultinpersonalinjury.Phil
therelevantdatasheetordatahandbook. ips
Semiconductorscustomersusingorsellingtheseprod
LimitingvaluesdefinitionLimitingvaluesgivenar
ucts
ein
foruseinsuchapplicationsdosoattheirownriskand
accordancewiththeAbsoluteMaximumRatingSyste
agreetofullyindemnifyPhilipsSemiconductorsforany
m
damagesresultingfromsuchapplication.
(IEC60134).Stressaboveoneormoreofthelimiting
valuesmaycausepermanentdamagetothedevice. RighttomakechangesPhilipsSemiconductors
Thesearestressratingsonlyandoperationofthedevic reservestherighttomakechangesintheproducts-
e includingcircuits,standardcells,and/orsoftware-
attheseoratanyotherconditionsabovethosegivenint describedorcontainedhereininordertoimprovedesig
he n
Characteristicssectionsofthespecificationisnotimpli and/
ed. orperformance.Whentheproductisinfullproduction
Exposuretolimitingvaluesforextendedperiodsmay (status‘Production’),relevantchangeswillbe
affectdevicereliability. communicatedviaaCustomerProduct/
ApplicationinformationApplicationsthatare ProcessChange
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describedhereinforanyoftheseproductsarefor
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illustrativepurposesonly.PhilipsSemiconductorsma
responsibilityorliabilityfortheuseofanyofthese
ke
products,conveysnolicenceortitleunderanypatent,
norepresentationorwarrantythatsuchapplicationsw
illbe copyright,ormaskworkrighttotheseproducts,and
suitableforthespecifiedusewithoutfurthertestingor makesnorepresentationsorwarrantiesthatthese
modification. productsarefreefrompatent,copyright,ormaskwork
2003Apr10 10 rightinfringement,unlessotherwisespecified.
PhilipsSemiconductors Productspecification

Voltageregulatordiodes BZX84series

NOT
ES

2003Apr10 11
PhilipsSemiconductors–
aworldwidecompany

Contactinformation

Foradditionalinformationpleasevisithttp://www.semiconductors.philips.com. Fax:
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