JMnic Product Specification
Silicon PNP Power Transistors 2SA940
DESCRIPTION
With TO-220 package
Complement to type 2SC2073
APPLICATIONS
Power amplifier applications
Vertical output applications
PINNING
PIN DESCRIPTION
1 Emitter
Collector;connected to
2
mounting base
3 Base
Absolute maximum ratings (Ta=25 )
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter -150 V
VCEO Collector-emitter voltage Open base -150 V
VEBO Emitter-base voltage Open collector -5 V
IC Collector current (DC) -1.5 A
IB Base current -0.5 A
Ta=25 1.5
PC Collector power dissipation W
TC=25 25
Tj Junction temperature 150
Tstg Storage temperature -55~150
JMnic Product Specification
Silicon PNP Power Transistors 2SA940
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50m A -1.5 V
VBE Base-emitter on voltage IC=-0.5A ; VCE=-10V -0.75 -0.85 V
V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -150 V
V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; IB=0 -150 V
V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V
ICBO Collector cut-off current VCB=-120V;IE=0 -10 A
IEBO Emitter cut-off current VEB=-5V; IC=0 -10 A
hFE DC current gain IC=-0.5A ; VCE=-10V 40 140
COB Output capacitance IE=0; VCB=-10V;f=1MHz 55 pF
fT Transition frequency IC=-0.5A ; VCE=-10V 4 MHz
2
JMnic Product Specification
Silicon PNP Power Transistors 2SA940
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance: 0.10 mm)
3
JMnic Product Specification
Silicon PNP Power Transistors 2SA940
