TC74HC257AP/AF/AFN
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74HC257AP,TC74HC257AF,TC74HC257AFN
Quad 2-Channel Multiplexer (3-state)
Note: xxxFN (JEDEC SOP) is not available in
Japan.
The TC74HC257A is high speed CMOS MULTIPLEXER
fabricated with silicon gate C2MOS technology. TC74HC257AP
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
It is composed of four independent 2-channel multiplexers with
common SELECT and OUTPUT ENABLE ( OE ).
If OE is set low, the outputs are held in a high-impedance
state. When SELECT is set low, “A” data inputs are enabled.
Conversely, when SELECT is high, “B” data inputs are
enabled.
All inputs are equipped with protection circuits against static
TC74HC257AF
discharge or transient excess voltage.
Features
• High speed: tpd = 10 ns (typ.) at VCC = 5 V
• Low power dissipation: ICC = 4 μA (max) at Ta = 25°C
• High noise immunity: VNIH = VNIL = 28% VCC (min)
• Output drive capability: 15 LSTTL loads
• Symmetrical output impedance: |IOH| = IOL = 6 mA (min)
TC74HC257AFN
• ∼ tpHL
Balanced propagation delays: tpLH −
• Wide operating voltage range: VCC (opr) = 2~6 V
• Pin and function compatible with 74LS257
Pin Assignment
Weight
DIP16-P-300-2.54A : 1.00 g (typ.)
SOP16-P-300-1.27A : 0.18 g (typ.)
SOL20-P-150-1.27 : 0.13 g (typ.)
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IEC Logic Symbol
Truth Table
Inputs Output
OE SELECT A B Y
H X X X Z
L L L X L
L L H X H
L H X L L
L H X H H
X: Don’t care
Z: High impedance
Absolute Maximum Ratings (Note 1)
Characteristics Symbol Rating Unit
Supply voltage range VCC −0.5~7 V
DC input voltage VIN −0.5~VCC + 0.5 V
DC output voltage VOUT −0.5~VCC + 0.5 V
Input diode current IIK ±20 mA
Output diode current IOK ±20 mA
DC output current IOUT ±35 mA
DC VCC/ground current ICC ±75 mA
Power dissipation PD 500 (DIP) (Note 2)/180 (SOP) mW
Storage temperature Tstg −65~150 °C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40~65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be
applied until 300 mW.
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Operating Ranges (Note)
Characteristics Symbol Rating Unit
Supply voltage VCC 2~6 V
Input voltage VIN 0~VCC V
Output voltage VOUT 0~VCC V
Operating temperature Topr −40~85 °C
0~1000 (VCC = 2.0 V)
Input rise and fall time tr, tf 0~500 (VCC = 4.5 V) ns
0~400 (VCC = 6.0 V)
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Electrical Characteristics
DC Characteristics
Test Condition Ta = 25°C Ta = −40~85°C
Characteristics Symbol VCC Unit
Min Typ. Max Min Max
(V)
2.0 1.50 ⎯ ⎯ 1.50 ⎯
High-level input
VIH ⎯ 4.5 3.15 ⎯ ⎯ 3.15 ⎯ V
voltage
6.0 4.20 ⎯ ⎯ 4.20 ⎯
2.0 ⎯ ⎯ 0.50 ⎯ 0.50
Low-level input
VIL ⎯ 4.5 ⎯ ⎯ 1.35 ⎯ 1.35 V
voltage
6.0 ⎯ ⎯ 1.80 ⎯ 1.80
2.0 1.9 2.0 ⎯ 1.9 ⎯
IOH = −20 μA 4.5 4.4 4.5 ⎯ 4.4 ⎯
VIN
High-level output
VOH = VIH or 6.0 5.9 6.0 ⎯ 5.9 ⎯ V
voltage
VIL
IOH = −6 mA 4.5 4.18 4.31 ⎯ 4.13 ⎯
IOH = −7.8 mA 6.0 5.68 5.80 ⎯ 5.63 ⎯
2.0 ⎯ 0.0 0.1 ⎯ 0.1
IOL = 20 μA 4.5 ⎯ 0.0 0.1 ⎯ 0.1
VIN
Low-level output
VOL = VIH or 6.0 ⎯ 0.0 0.1 ⎯ 0.1 V
voltage
VIL
IOL = 6 mA 4.5 ⎯ 0.17 0.26 ⎯ 0.33
IOL = 7.8 mA 6.0 ⎯ 0.18 0.26 ⎯ 0.33
3-state off leak VIN = VIH or VIL
IOZ 6.0 ⎯ ⎯ ±0.5 ⎯ ±5.0 μA
current VOUT = VCC or GND
Input leakage
IIN VIN = VCC or GND 6.0 ⎯ ⎯ ±0.1 ⎯ ±1.0 μA
current
Quiescent supply
ICC VIN = VCC or GND 6.0 ⎯ ⎯ 4.0 ⎯ 40.0 μA
current
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AC Characteristics (input: tr = tf = 6 ns)
Test Condition Ta = 25°C Ta = −40~85°C
Characteristics Symbol CL VCC Unit
Min Typ. Max Min Max
(pF) (V)
2.0 ⎯ 20 60 ⎯ 75
tTLH
Output transition time ⎯ 50 4.5 ⎯ 6 12 ⎯ 15 ns
tTHL
6.0 ⎯ 5 10 ⎯ 13
2.0 ⎯ 45 100 ⎯ 125
50 4.5 ⎯ 13 20 ⎯ 25
Propagation delay
tpLH 6.0 ⎯ 11 17 ⎯ 21
time ⎯ ns
(A, B-Y, Y )
tpHL 2.0 ⎯ 62 140 ⎯ 175
150 4.5 ⎯ 18 28 ⎯ 35
6.0 ⎯ 15 24 ⎯ 30
2.0 ⎯ 45 100 ⎯ 125
50 4.5 ⎯ 13 20 ⎯ 25
Propagation delay
tpLH 6.0 ⎯ 11 17 ⎯ 21
time ⎯ ns
(SELECT-Y, Y )
tpHL 2.0 ⎯ 62 140 ⎯ 175
150 4.5 ⎯ 18 28 ⎯ 35
6.0 ⎯ 15 24 ⎯ 30
2.0 ⎯ 40 110 ⎯ 140
50 4.5 ⎯ 12 22 ⎯ 28
3-state output enable tpZL 6.0 ⎯ 10 19 ⎯ 24
RL = 1kΩ ns
time tpZH 2.0 ⎯ 57 150 ⎯ 190
150 4.5 ⎯ 17 30 ⎯ 38
6.0 ⎯ 14 26 ⎯ 33
2.0 ⎯ 28 140 ⎯ 175
3-state output disable tpLZ
RL = 1kΩ 50 4.5 ⎯ 14 28 ⎯ 35 ns
time tpHZ
6.0 ⎯ 13 24 ⎯ 30
Input capacitance CIN ⎯ ⎯ 5 10 ⎯ 10 pF
Output capacitance COUT ⎯ ⎯ 10 ⎯ ⎯ ⎯ pF
Power dissipation CPD
⎯ ⎯ 47 ⎯ ⎯ ⎯ pF
capacitance (Note)
Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD･VCC･fIN + ICC/4 (per bit)
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Package Dimensions
Weight: 1.00 g (typ.)
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Package Dimensions
Weight: 0.18 g (typ.)
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Package Dimensions (Note)
Note: This package is not available in Japan.
Weight: 0.13 g (typ.)
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RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
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document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
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• Please contact your sales representative for product-by-product details in this document regarding RoHS
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that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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