APT10M11JVRU2

VDSS = 100V
ISOTOP® Boost chopper
RDSon = 11m max @ Tj = 25°C
MOSFET Power Module ID = 142A @ Tc = 25°C

K
Application
 AC and DC motor control
 Switched Mode Power Supplies
D  Power Factor Correction
 Brake switch

Features
 Power MOS V® MOSFETs
G - Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
S
- Very rugged
 ISOTOP® Package (SOT-227)
 Very low stray inductance
K  High level of integration
S
Benefits
 Outstanding performance at high frequency operation
G D  Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Very rugged
 Low profile
 RoHS Compliant

ISOTOP

Absolute maximum ratings

Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 100 V
Tc = 25°C 142
ID Continuous Drain Current
Tc = 80°C 106 A
IDM Pulsed Drain current 576
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 11 m
APT10M11JVRU2 – Rev 2 October, 2012

PD Maximum Power Dissipation Tc = 25°C 450 W

IAR Avalanche current (repetitive and non repetitive) 144 A
EAR Repetitive Avalanche Energy 50
mJ
EAS Single Pulse Avalanche Energy 2500
IFAV Maximum Average Forward Current Duty cycle=0.5 Tc = 90°C 30
A
IFRMS RMS Forward Current (Square wave, 50% duty) 47

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

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 APT10M11JVRU2
All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 100V Tj = 25°C 250
IDSS Zero Gate Voltage Drain Current µA
VGS = 0V,VDS = 80V Tj = 125°C 1000
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 71A 11 m
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 2 4 V
IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V ±100 nA

Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance VGS = 0V 8600
Coss Output Capacitance VDS = 25V 3200 pF
Crss Reverse Transfer Capacitance f = 1MHz 1180
Qg Total gate Charge VGS = 10V 300
Qgs Gate – Source Charge VBus = 50V 95 nC
ID = 50A @ TJ=25°C
Qgd Gate – Drain Charge 110
Td(on) Turn-on Delay Time 16
VGS = 15V
Tr Rise Time VBus = 50V 48
ns
Td(off) Turn-off Delay Time ID = 142A @ TJ=25°C 51
RG = 0.6
Tf Fall Time 9

Chopper diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit
IF = 30A 1.1 1.15
VF Diode Forward Voltage IF = 60A 1.4 V
IF = 30A Tj = 125°C 0.9
VR = 200V Tj = 25°C 250
IRM Maximum Reverse Leakage Current µA
VR = 200V Tj = 125°C 500
CT Junction Capacitance VR = 200V 94 pF
IF=1A,VR=30V
Reverse Recovery Time Tj = 25°C 21
di/dt =200A/µs
trr ns
Tj = 25°C 24
Reverse Recovery Time
Tj = 125°C 48
IF = 30A Tj = 25°C 3
IRRM Maximum Reverse Recovery Current VR = 133V A
Tj = 125°C 6
di/dt =200A/µs
Tj = 25°C 33
Qrr Reverse Recovery Charge nC
Tj = 125°C 150
APT10M11JVRU2 – Rev 2 October, 2012

trr Reverse Recovery Time IF = 30A 31 ns

Qrr Reverse Recovery Charge VR = 133V Tj = 125°C 335 nC
IRRM Maximum Reverse Recovery Current di/dt =1000A/µs 19 A

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 APT10M11JVRU2

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit
MOSFET 0.28
RthJC Junction to Case Thermal Resistance
Diode 1.21 °C/W
RthJA Junction to Ambient (IGBT & Diode) 20
VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 2500 V
TJ,TSTG Storage Temperature Range -55 150
°C
TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2 g

Typical MOSFET Performance Curve

APT10M11JVRU2 – Rev 2 October, 2012

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APT10M11JVRU2

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APT10M11JVRU2 – Rev 2 October, 2012
 APT10M11JVRU2

Typical Diode Performance Curve

APT10M11JVRU2 – Rev 2 October, 2012

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APT10M11JVRU2

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APT10M11JVRU2 – Rev 2 October, 2012
 APT10M11JVRU2

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)
31.5 (1.240) 12.2 (.480)
31.7 (1.248) 8.9 (.350)
7.8 (.307) W=4.1 (.161) 9.6 (.378)
8.2 (.322) W=4.3 (.169) Hex Nut M4
H=4.8 (.187) (4 places)
H=4.9 (.193)
(4 places)

r = 4.0 (.157) 25.2 (0.992)

(2 places) 4.0 (.157) 0.75 (.030) 12.6 (.496) 25.4 (1.000)
4.2 (.165) 0.85 (.033) 12.8 (.504)
(2 places)

3.3 (.129) 1.95 (.077)

3.6 (.143) 2.14 (.084)
14.9 (.587) Cathode Drain
15.1 (.594)
30.1 (1.185) * Emitter terminals are shorted
30.3 (1.193) internally. Current handling
38.0 (1.496) capability is equal for either
38.2 (1.504) Emitter terminal.

Source
APT10M11JVRU2 – Rev 2 October, 2012

Gate
Dimensions in Millimeters and (Inches)

ISOTOP® is a registered trademark of ST Microelectronics NV

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 APT10M11JVRU2
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Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
APT10M11JVRU2 – Rev 2 October, 2012

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