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Oxidation

The document discusses the thermal oxidation of silicon, emphasizing the properties and applications of SiO2, as well as the Deal-Grove model of oxidation. It outlines the formation process, including dry and wet oxidation methods, and factors influencing oxidation such as temperature and substrate orientation. Additionally, it highlights the importance of minimizing interface charges and provides insights into the kinetics of SiO2 growth.

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lipikanil666
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32 views24 pages

Oxidation

The document discusses the thermal oxidation of silicon, emphasizing the properties and applications of SiO2, as well as the Deal-Grove model of oxidation. It outlines the formation process, including dry and wet oxidation methods, and factors influencing oxidation such as temperature and substrate orientation. Additionally, it highlights the importance of minimizing interface charges and provides insights into the kinetics of SiO2 growth.

Uploaded by

lipikanil666
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Thermal Oxidation of Silicon

SiO2 and the Si/SiO2 interface are the principal reasons for
silicon’s dominance in the IC industry.

• General Properties of SiO2


• Applications of thermal SiO2
• Deal-Grove Model of Oxidation

Thermal SiO2 is amorphous.


Weight Density = 2.20 gm/cm3
Molecular Density = 2.3E22 molecules/cm3
Thermal SiO2 Properties
(1) Excellent Electrical Insulator
Resistivity > 1E20 ohm-cm Energy Gap ~ 9 eV
(2) High Breakdown Electric Field> 10MV/cm
(3) Stable and Reproducible Si/SiO2 Interface
(4) Conformal oxide growth on exposed Si surface

SiO2
Thermal SiO2 Properties (contd.)
(5) SiO2 is a good diffusion mask for common dopants like B,
P, As, Sb

(6) Very good etching selectivity between Si and SiO2.


Formation Process
Achieved by heating the Si wafer to a high temperature
(~900-1200C) in an atmosphere containing pure O2 or water
vapor (H2O).
Dry Oxidation: Si + O2  SiO2
• Higher quality, for Gate oxide

Wet Oxidation: Si + 2H2O  SiO2 + 2H2

• Lower quality, for field oxide or barrier oxide


Oxidation Furnace
Oxidation Furnace
Thickness of Si Consumed (Planer Oxidation)
One-dimensional planar oxide growth
Kinetics of SiO2 Growth

Temperature: 900-1100 C
Si + O2  SiO2 (Dry Oxidation)
Si + 2H2O  SiO2 + 2H2 ( Wet Oxidation)
Derivation of Oxidation Growth Rate
(Deal-Grove Model )
Deal-Grove Model Parameters
B = Parabolic Constant
B/A = Linear Constant
Effect of Xi on Wafer Topography
Factors Influencing Thermal Oxidation

– Oxidation Temperature
– Ambient Type (Dry O2, Steam, HCl)
– Ambient Pressure
– Substrate Crystallographic Orientation
– Substrate Doping
High Pressure Oxidation

1) The oxidation temperature can be reduced if the pressure


is increased, to achieve a given oxidation rate

2) To grow a given oxide thickness at same temperature, time


can be reduced
High Doping Concentration Effect
Substrate Orientation Effect
Transmission Electron Micrograph of
Si/SiO2 Interface
Oxide Charges
To Minimize Interface Charges

•Use inert gas ambient (Ar or N2) when cooling down


at end of oxidation step

•A final annealing step at 400-450C is performed with


10%H2+90%N2 ambient (“forming gas”) after the IC
metallization step
Summary of Deal-Grove Model

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