Hawassa University
Institute of Technology
Faculty of Electrical Engineering
Department of Electrical and Computer Engineering
2024/2025 Academic Year, Semester II
Applied Electronics I (ECEg2131)
Course outline/plan
Instructor: Tamirat Yenealem, Reta Jibat 207, [email protected], [email protected]
ECTS: 5(3/2/0)
Course description- Basic Semiconductor Theory; Semiconductor diodes and their applications; BJT; FET;
Amplifier Frequency Response; Multistage Amplifiers
Course objective: Students completing this subject should:
Be able to discuss basic concepts of electronic circuits with the aid of characteristic curves
Be able to design and test real world applicable electronic circuits
Schedule
Week Topics to be covered Major teaching-learning
activities & Assessment of
learning
I and Chapter 1: Basic semiconductor theory
II Introduction 6 hrs lecture
Semiconductor Materials: Ge, Si, and GaAs 4 hrs Tutorial
Covalent Bonding and Intrinsic Materials
Energy Levels Reading assignment (Home take)
N-Type and P-type Materials
Semiconductor Diode
Ideal Versus Practical
Resistance Levels
Diode Equivalent Circuits
III- V Chapter 2: Semiconductor Diodes and Their 9 hrs lecture
Application 6 hrs tutorial
Introduction
Series Diode Configurations Reading assignment (Home take)
Parallel and Series - parallel Configurations
Half-Wave Rectification
Full-Wave Rectification
Clippers
Clampers
Zener Diodes
Special Diodes Types
DC Power Supply
Chapter 3: Bipolar Junction Transistors (BJTs) 9 hrs lecture
VI- VIII Introduction 6 hrs tutorial
Device structure and physical operation
o Transistor Construction Reading assignment (Home take)
o Transistor Operation
Current voltage characteristics
1
o Common-Base Configuration
o Common-Emitter Configuration
o Common-collector Configuration
BJT circuits at DC
o Operating Point
o Biasing in BJT circuit amplifiers
Fixed-Bias Configuration
Emitter-Bias Configuration
Voltage-Divider Bias
Configuration
o Collector Feedback Configuration
o Emitter-Follower Configuration
o Common-Base Configuration
Test (30%)
IX - XI Chapter 4: BJT Small Signal Amplifiers (BJT AC 9 hrs lecture
Analysis 6 hrs tutorial
Introduction
Amplification in the AC Domain Reading assignment (Home take)
BJT Transistor Modeling
The re - Transistor Model
CE Fixed-Bias Configuration
CE Emitter-Bias Configuration
CE Voltage-Divider Bias Configuration
Common-Base Configuration
Collector Feedback Configuration
Introduction to Multistage BJT Amplifier
Gain Relations in Multistage Amplifiers
RC-Coupled BJT Amplifiers
Direct-Coupled BJT Amplifiers
XII - IV Chapter 5: Field effect transistors (FETs) 9 hrs lecture
Introduction 6 hrs tutorial
Junction field effect transistor
Static characteristics of FETs Reading assignment (Home take)
Biasing of FET circuits
Common source JFET amplifier
Depletion MOSFET or IGFET
Enhancement only MOSFET
Dual stage MOSFET
P-channel and n-channel MOSFFET
-identify terminals 9 hrs practical
- FET dc circuits
2
XV Chapter 6: Power Amplifiers 3 hrs lecture
Introduction 2 hrs tutorial
The class A power amplifier
The class B power amplifier and Reading assignment (Home take)
class AB Push Pull amplifiers
The class C power amplifier
Tuned amplifiers
-XVI Revision on practical activities 3 hrs practical
PRACTICAL EXAMINATION 3hrs
Note: In Electrical Engineering Faculty, we have a lab manual for this course.
Therefore, all lab activities will be performed based on that lab manual
procedurally.
References
1. Robert Boylestad, Louis Nashelsky: Electronic Devices and Circuit Theory
2. Theodore F. Bogart, Electronic Devices and Circuits
3. Malvino, Electronic Principles
4. S. Sedra & C. Smith, Microelectronic Circuits
5. jacob millman microelectronics digital and analog circuit system
6. sanjeev gupta, electronic circuit and device
Methods of assessment
Quiz1……………...(5%)
Quiz2………………(5%)
Test ……………...(30%)
Assignment……….(10%)
Final …………….... (50%
