1.
A p- type semiconductor is
a) An example for intrinsic semiconductor
b) Obtained when arsenic is added to pure Ge
c) Having electrons as majority charge carriers
d) Insulator at 0 K
2. In an extrinsic semiconductor the electrical conductivity arises due to
a) Breaking of covalent bonds only
b) Addition of impurities only
c) Both a) and b)
d) Neither a) nor b)
3. The energy gap of a semiconductor is the difference between Energy correspond
a) to top of the CB and bottom of VB
b) to bottom of CB and top of VB
c) to top of CB and top of VB
d) to bottom of CB and bottom of VB
4. The energy gap of a semiconductor is 0.7 eV. Given hc = 12400A0 eV, the maximum
wavelength of a radiation that will generate the electron-hole pair is nearly
a) 17714 A0 b) 177.14 A0c) 1771.4 A0 d) 17.714 A0
5. The energy gap of which of the following is less than 3eV but more than 0eV?
a) Iron b) copper d) germanium d) diamond
6. Which statement is correct
(b) Both N-type and P-type are neutral
(c) N-type is positively charged and P-type is negatively charged
(d) Both N-type and P-type are negatively charged
(a) N-type is negatively charged and P-type g is positively charged
7. Even though electrons are majority charge carriers in n-type semiconductor, it is
electrically neutral. This is because
a) The mobility of electrons is less b) atoms are electrically neutral
c) Electrons are stationary d) electrons neutralize with holes
8. Copper and germanium are cooled from room temperature to 70K. If Rc and RGe
are the resistances
a) Rc decreases while RGe increases
b) Rc increases while RGe decrease
c) Rc and RGe increases
d) Rc and RGe decreases
9. When a p-n junction is formed, when there is no biasing, under equilibrium the net
current across the junction is zero. This is due to
a) No flow of charges across the junction
b) Diffusion current is equal to drift current
c) High resistance across the junction
d) There is no p.d across the junction
(hint: The diffusion of electrons from n-side and holes from p-side (major carriers) constitutes
diffusion current (Idif). Meanwhile the minority charge carriers also move across the junction due
to development of contact potential. This gives drift current (Id). They both are opposite to each
other. Under equilibrium, diffusion current is equal to drift current and the net current becomes
zero.)
10. The dominant mechanisms for motion of charge carriers in forward and reverse
biased p-n junctions are
a) Diffusion in FB and drift in RB b) drift in FB and diffusion in RB
b) Diffusion both FB and RB d) drift in FB and RB
(hint: in FB electrons from n side and holes from p side move across the junction. Thi s is diffusion.
In RB electrons (minority) from p-side, holes (minority) from n side move. This is known as drift)
11. The reverse biasing in a PN junction diode
(a)Decreases the potential barrier (b) Increases the potential barrier
(c)Increases the number of minority charge carriers (d) Increases the number of majority
charge carriers
12. The potential difference developed across the junction due to diffusion of charges is
known as
a) Breakdown potential b) stopping potential c)contact potential d) ionizing
potential
13. In the circuit given below, the value of the current is
PN 300 + 1V
+ 4V
(a) 0 A (b) 10 mA (c) 100A (d) 1mA
(hint: diode is in FB, there is no too much resistance from it. Hence I = V/R = 4-1/300 = 0.01
A)
14. Which one is reverse-biased ?
10V – 5V
15V – 5V
– 10V – 10V
10V
(hint: in c p- type is connected to -10V whereas n is at 0V. hence it is RB)
15. The electrical circuit used to get smooth Dc from a rectifier circuit is called
a) Gate b) amplifier c) filter d) oscillator
16. The process of converting pulsating Ac into pulsating DC is known as
a) Amplification b) rectification c) filtering d) modulation
17. The number of diodes used in full wave rectifier is
a)1 b) 4 c)3 d) 2
18. Which of the following graph correctly represents the V-I characteristics of a diode in
RB mode?
(ans: (c))
18. The width of the depletion layer in p-n junction diode is
a) Increased in RB b) increased in FB c) decreased in RB d) independent
of bias voltage
