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Isc BD376/378/380: Isc Silicon PNP Power Transistors

The document provides specifications for isc Silicon PNP Power Transistors BD376, BD378, and BD380, detailing their electrical characteristics, absolute maximum ratings, and applications for medium power linear and switching applications. Key parameters include collector-emitter voltage ratings, current gain, and power dissipation. The document also includes information on switching times and classifications for current gain.

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38 views2 pages

Isc BD376/378/380: Isc Silicon PNP Power Transistors

The document provides specifications for isc Silicon PNP Power Transistors BD376, BD378, and BD380, detailing their electrical characteristics, absolute maximum ratings, and applications for medium power linear and switching applications. Key parameters include collector-emitter voltage ratings, current gain, and power dissipation. The document also includes information on switching times and classifications for current gain.

Uploaded by

tech
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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INCHANGE Semiconductor isc Product Specification

isc Silicon PNP Power Transistors BD376/378/380

DESCRIPTION
·DC Current Gain-
: hFE= 20(Min)@ IC= -1A
·Complement to Type BD375/377/379

APPLICATIONS
·Designed for medium power linear and switching
applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL PARAMETER VALUE UNIT

BD376 -50

VCBO Collector-Base Voltage BD378 -75 V

BD380 -100

BD376 -45

VCEO Collector-Emitter Voltage BD378 -60 V

BD380 -80

VEBO Emitter-Base Voltage -5 V

IC Collector Current-Continuous -2 A

ICM Collector Current-Peak -3 A

IB
B Base Current-Continuous -1 A

Collector Power Dissipation


PC 25 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification

isc Silicon PNP Power Transistors BD376/378/380

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

BD376 -45

Collector-Emitter
VCEO(SUS) BD378 IC= -100mA ; IB= 0 -60 V
Sustaining Voltage

BD380 -80

BD376 -50

VCBO Collector-Base Voltage BD378 IC= -0.1mA ; IE= 0 -75 V

BD380 -100

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A


B -1.0 V

VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -2V -1.5 V

BD376 VCB= -45V; IE= 0 -2

ICBO Collector Cutoff Current BD378 VCB= -60V; IE= 0 -2 μA

BD380 VCB= -80V; IE= 0 -2

IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA

hFE-1 DC Current Gain IC= -0.15A ; VCE= -2V 40 375

hFE-2 DC Current Gain IC= -1A; VCE= -2V 20

Switching Times

ton Turn-On Time 0.05 μs


IC= -0.5A; IB1= -IB2= -50mA;
VCC= -30V
toff Turn-Off Time 0.5 μs

‹ hFE-1 Classifications

6 10 16 25

40-100 63-160 100-250 150-375

isc Website：www.iscsemi.cn 2

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