Semiconductor IRF220, IRF221,

IRF222, IRF223
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm,
October 1997 N-Channel Power MOSFETs

Features Description
• 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
• rDS(ON) = 0.8Ω and 1.2Ω
MOSFETs designed, tested, and guaranteed to withstand a
• SOA is Power Dissipation Limited specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
• Nanosecond Switching Speeds applications such as switching regulators, switching conver-
• Linear Transfer Characteristics tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
• High Input Impedance gate drive power. These types can be operated directly from
• Majority Carrier Device integrated circuits.

• Related Literature Formerly developmental type TA09600.

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Ordering Information D

PART NUMBER PACKAGE BRAND

IRF220 TO-204AA IRF220 G

IRF221 TO-204AA IRF221

S
IRF222 TO-204AA IRF222

IRF223 TO-204AA IRF223

NOTE: When ordering, use the entire part number.

Packaging
JEDEC TO-204AA

DRAIN
(FLANGE)

SOURCE (PIN 2)
GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. File Number 1567.2
Copyright © Harris Corporation 199&
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 IRF220, IRF221, IRF222, IRF223

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

IRF220 IRF221 IRF222 IRF223 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .VDS 200 150 200 150 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR 200 150 200 150 V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID 5.0 5.0 4.0 4.0 A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 3.0 3.0 2.5 2.5 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM 20 20 16 16 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD 40 40 40 40 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 0.32 0.32 0.32 W/oC
Single Pulse Avalanche Rating. . . . . . . . . . . . . . . . . . . . . EAS 85 85 85 85 mJ
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL 300 300 300 300 oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg 260 260 260 260 oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, (Figure 10)
IRF220, IRF222 200 - - V

IRF221, IRF223 150 - - V

Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA 2.0 - 4.0 V

Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 µA

On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
IRF220, IRF221 5.0 - - A

IRF222, IRF223 4.0 - - A

Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA

Drain to Source On Resistance (Note 2) rDS(ON) ID = 2.5A, VGS = 10V, (Figure 8)

IRF220, IRF221 - 0.5 0.8 Ω

IRF222, IRF223 - 0.8 1.2 Ω

Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON)MAX, ID = 2.5A 1.3 2.5 - S

Turn-On Delay Time td(ON) VDD = 0.5 x Rated BVDSS, ID ≈ 2.5A, RG = 50Ω - 20 40 ns
For IRF220, 222 RL = 80Ω
Rise Time tr For IRF221, 223 RL = 60Ω - 30 60 ns
(Figures 17, 18) MOSFET Switching Times are
Turn-Off Delay Time td(OFF) - 50 100 ns
Essentially Independent of Operating
Temperature
Fall Time tf - 30 60 ns

Total Gate Charge Qg(TOT) VGS = 10V, ID = 6.0A, VDS = 0.8 x Rated BVDSS - 11 15 nC
(Gate to Source + Gate to Drain) Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate
Charge is Essentially Independent of Operating
Gate to Source Charge Qgs Temperature - 5.0 - nC

Gate to Drain “Miller” Charge Qgd - 6.0 - nC

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 IRF220, IRF221, IRF222, IRF223

Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz - 450 - pF

(Figure 11)
Output Capacitance COSS - 150 - pF

Reverse Transfer Capacitance CRSS - 40 - pF

Internal Drain Inductance LD Measured Between the Modified MOSFET - 5.0 - nH

Contact Screw on the Symbol Showing the
Flange that is Closer to Internal Device
Source and Gate Pins and Inductances
the Center of Die D

Internal Source Inductance LS Measured From the LD - 12.5 - nH

Source Lead, 6mm
(0.25in) From the Flange G
and the Source Bonding LS
Pad
S

Thermal Resistance Junction to Case RθJC - - 3.12 oC/W

Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 30 oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current ISD Modified MOSFET

Symbol Showing the D
IRF220, IRF221 - - 5.0 A
Integral Reverse
IRF222, IRF223 P-N Junction Rectifier - - 4.0 A

Pulse Source to Drain Current (Note 3) ISDM G

IRF220, IRF221 - - 20 A
S
IRF222, IRF223 - - 16 A

Source to Drain Diode Voltage (Note 2) VSD

IRF220, IRF221 TC = 25oC, ISD = 5.0A, VGS = 0V, (Figure 13) - - 2.0 V

IRF222, IRF223 TC = 25oC, ISD = 4.0A, VGS = 0V, (Figure 13) - - 1.8 V

Reverse Recovery Time trr TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/µs - 350 - ns

Reverse Recovery Charge QRR TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/µs - 2.3 - µC

NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 10V, starting TJ = 25oC, L = 6.18mH, RG = 50Ω, peak IAS = 5A. See Figures 15, 16.

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 IRF220, IRF221, IRF222, IRF223

Typical Performance Curves Unless Otherwise Specified

1.2 5
POWER DISSIPATION MULTIPLIER

1.0
4

ID, DRAIN CURRENT (A)

IRF220, IRF221
0.8
3 IRF222, IRF223

0.6
2
0.4

1
0.2

0 0
0 50 100 150 25 50 75 100 125 150
TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE CASE TEMPERATURE

1.0
ZθJC, NORMALIZED TRANSIENT
THERMAL IMPEDANCE

0.5

0.2

0.1 PDM
0.1
0.05
0.02 t1
0.01
t2
NOTES:
SINGLE PULSE DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
0.01
10-5 10-4 10-3 10-2 10-1 1 10
t1 , RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

100 10
OPERATION IN THIS AREA 10V
IS LIMITED BY rDS(ON) VGS = 7V
IRF220, IRF221 8
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)

80µs PULSE TEST

IRF222, IRF223
10 VGS = 6V
IRF220, IRF221 100µs 6
10µs
IRF222, IRF223
4
DC 1ms VGS = 5V
1.0

10ms 2
TC = 25oC
100ms VGS = 4V
TJ = MAX RATED
IRF221 IRF220
SINGLE PULSE IRF223 IRF222 0
0.1
1.0 10 100 1000 0 20 40 60 80 100
VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

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 IRF220, IRF221, IRF222, IRF223

Typical Performance Curves Unless Otherwise Specified (Continued)

5 10
10V 80µs PULSE TEST 80µs PULSE TEST
VDS >ID(ON) x rDS(ON) MAX
8V
4 6V 8

ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

VGS = 5V
3 6

2 4

TJ = 125oC
1 4V 2 TJ = 25oC
TJ = -55oC

0 0
0 2 4 6 8 10 0 2 4 6 8 10
VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

1.5 2.2
VGS = 10V
NORMALIZED DRAIN TO SOURCE ID = 2A
rDS(ON), DRAIN TO SOURCE

1.8
ON RESISTANCE (Ω)

ON RESISTANCE

1.0
VGS = 10V 1.4

VGS = 20V 1.0

0.5

0.6

0 0.2
0 5 10 15 20 -40 0 40 80 120
ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (oC)
NOTE: Heating effect of 2µs is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
VOLTAGE AND DRAIN CURRENT RESISTANCE vs JUNCTION TEMPERATURE

1.25 1000
ID = 250µA
VGS = 0V, f = 1MHz
NORMALIZED DRAIN TO SOURCE

CISS = CGS + CGD

1.15 800 CRSS = CGD
BREAKDOWN VOLTAGE

COSS ≈ CDS + CGD

C, CAPACITANCE (pF)

1.05 600

0.95 400 CISS

COSS
0.85 200
CRSS

0.75 0
-40 0 40 80 120 160 0 10 20 30 40 50
TJ, JUNCTION TEMPERATURE (oC) VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VOLTAGE vs JUNCTION TEMPERATURE

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 IRF220, IRF221, IRF222, IRF223

Typical Performance Curves Unless Otherwise Specified (Continued)

5 2
VDS > ID(ON) x rDS(ON)MAX

ISD, SOURCE TO DRAIN CURRENT (A)

80µs PULSE TEST TJ = -55oC 100
gfs, TRANSCONDUCTANCE (S)

4 TJ = 25oC

3 TJ = 25oC TJ = 150oC

TJ = 125oC 10
2

TJ = 150oC
1
TJ = 25oC

0 1.0
0 2 4 6 8 10 0 1 2 3 4
ID, DRAIN CURRENT (A) VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20
ID = 6.0A
VGS, GATE TO SOURCE VOLTAGE (V)

15 VDS = 40V
VDS = 100V

VDS = 160V
10
IRF220, IRF222

0
0 4 8 12 16 20
Qg(TOT), TOTAL GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

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 IRF220, IRF221, IRF222, IRF223

Test Circuits and Waveforms

VDS
BVDSS

L tP
VDS

VARY tP TO OBTAIN IAS

+ VDD
REQUIRED PEAK IAS RG
VDD
VGS -
DUT

tP
0V IAS
0
0.01Ω
tAV

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED INDUCTIVE WAVEFORMS

tON tOFF

td(ON) td(OFF)

tr tf
RL VDS
90% 90%

+
VDD 10% 10%
RG
- 0

DUT 90%

VGS 50% 50%

PULSE WIDTH
VGS 10%
0

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

VDS
CURRENT (ISOLATED
REGULATOR SUPPLY)
VDD

Qg(TOT)
SAME TYPE VGS
12V AS DUT Qgd
0.2µF 50kΩ
BATTERY
0.3µF Qgs

D
VDS

G DUT
0

Ig(REF) S
0 IG(REF)
VDS
IG CURRENT ID CURRENT
SAMPLING SAMPLING
RESISTOR RESISTOR 0

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS