MCSV-100 • Nikon

Step-and-Repeat System

Process Program Explanation

Software Version 1.6

NSR/MCSV Series

Nikon Corporation MCSV-100

Document Version 3.0
July 11, 1997
Version 3.0 i
MCSV-100 • Nikon

ATTENTION: IMPORTANT NOTICE

Nikon has prepared this manual for use by Nikon personnel and customers as a guide for the
proper operation or maintenance of Nikon equipment and software. The drawings, specifications
and information contained herein are the exclusive property of Nikon. They shall not be used in
whole or part as the basis for manufacture or sale of any equipment or computer programs. Any
copying, use or disclosure of any drawings, specifications or information in this manual must
conform strictly to the licensing agreement between customer and Nikon.

Copyright© 1994, 1995, 1997 an unpublished work by Nikon Precision Inc.

All rights reserved.

The information in this manual is subject to change without notice. Nikon assumes no
responsibility for any errors that may appear in this manual. Nikon reserves the right to publish
updated versions of this manual or portions hereof, without notice and without obligation to
update, nor to keep current the information contained in this manual.

NIKON MAKES NO REPRESENTATIONS OR WARRANTIES WITH RESPECT TO THE

CONTENTS HEREOF AND SPECIFICALLY DISCLAIMS ANY IMPLIED WARRANTIES OF
MERCHANTABILITY OR FITNESS FOR ANY PARTICULAR PURPOSE.

Nikon® is a registered trademark of Nikon Corporation.

o
4/93
5198
NSR-7139
NMCSVPP-116J97c(H)

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MCSV-100 • Nikon

DOCUMENT REVISION STATUS

PRODUCT: Nikon Step-and-Repeat System, NSR/MCSV Series

DOCUMENT: Process Program Explanation, Software Version 1.6 (MCSV-100)

The following describes the revised pages that should be in this document. All documents are
originally issued as Version 1.0. Revisions to selected pages within a document are issued as
Version 1.1, 1.2, and so on. Revisions to an entire document are issued as new Versions
(Version 2.0, 3.0, etc.). As an example, the third revision (0.3) to the second version (2.0) of a
document would be Version 2.3.

Nikon uses the Document Revision Status page to keep track of, and to provide you with, the
most recent or updated version of this document.

REVISION DESCRIPTION
DATE

12/01/94 Version 1.0

10/25/95 Version 2.0

07/11/97 Version 3.0

Version 3.0 iii

MCSV-100 • Nikon

SAFETY INFORMATION

In an effort to protect users from personal harm and to protect the system from damage, Nikon
has adopted the use of warnings, CAUTIONS, and NOTES in all training manuals.

• WARNINGS indicate that personal harm is possible if the warning is not heeded.
• CAUTIONS indicate that the system may be damaged if the caution is not heeded.
• NOTES contain additional support information.

The following is a listing of WARNINGS, CAUTIONS, and NOTES that should be observed
throughout NSR system operation. Additional WARNINGS, CAUTIONS, and NOTES appear in
the text of this manual.

Warning – Mercury arc lamps operate under high pressure and emit
ultraviolet (UV)radiation that is dangerous to the eyes and skin. Always follow
rigid safety precautions when working around mercury arc lamps. Ensure the
lamp housings are in place before the lamp is turned ON. Wear suitable eye and
skin protection to protect yourself from ultraviolet radiation and high intensity light.

Warning – Use EXTREME CAUTION when working around any power supply
areas. High voltage exists throughout the system. Observe standard electrical
safety precautions to avoid personal injury or damage to the equipment.

Warning – DO NOT remove any covers or touch any lead wires to avoid
electrical shock.

Warning – Use of controls or adjustments, or performance of procedures other

than those specified herein may result in hazardous radiation exposure.

Warning – Lasers used in Nikon alignment systems emit radiation that can cause
eye damage. DO NOT stare into the laser beams. All NSRs with Class 3b or
higher laser subsystems must have its work area (i.e., chamber) secured from
any stray laser light emissions at all times. This requirement is in adherence to
nationally recognized standards for the safe use of lasers. To eliminate the
possibility of anyone coming in contact with any laser emission, ensure that the
appropriate laser light covers are properly secured in place whenever a system is
left unattended. When working on any system which is illuminated with a laser,
the proper use of safety eyewear is a requirement.

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MCSV-100 • Nikon

Warning – Keep hands, hair, tools, and loose clothing away from any moving
parts to avoid personal injury or damage to the equipment.

Warning – Prolonged operation of the keyboard and monitor may cause fatigue.
Frequent short breaks and appropriate seating should be used to reduce fatigue.

CAUTIONS
DO NOT operate the system when temperature specifications have been
exceeded to avoid damage to the system and unreliable performance.

Observe standard clean room procedures at all times to prevent

component damage due to contamination.

Mercury arc lamps may explode or fail if skin oils or contaminants are
deposited on the lamps. Always wear clean room gloves when handling
mercury arc lamps.

Ensure a high level of cleanliness is maintained at all times for all wafer
handling subassemblies to avoid wafer handling failures. Errors may
occur if there is contamination on the wafer handling subassemblies.

NOTE
There are no operator-serviceable parts on Nikon systems. Please refer any
servicing requirements to qualified service personnel.

It is the customer’s responsibility to maintain back-up systems and user/data

disks. This is extremely important in restoring system integrity in a minimum
amount of time should a catastrophic disk error occur.

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 MCSV-100 • Nikon

EMERGENCY MACHINE OFF

The Nikon NSR systems are equipped with an Emergency Machine Off (EMO) circuit. This circuit
uses four EMO buttons:

1. EMO1 on the rear of the system

2. EMO2 on the front of the system
3. EMO3 on the front of the Control Console
4. EMO4 on optional/auxiliary equipment

Applying power to the main input power circuit breaker also applies power to the Transformer.
The 24 VAC secondary from the transformer goes to terminal block and out through the EMO
buttons. Power flows through the EMO buttons to the ON/OFF buttons on the NEMA box on the
rear of the system. Pushing the ON button closes relay MC, allowing the Emergency Power
Dropout Contactor to close, applying power to the NSR.

Pressing any of the EMO buttons or the OFF button on the NEMA box opens the 24 VAC circuit,

BREAKER
Emergency Power
Main Input
Dropout Contactor
Power Circuit

U1
From AC 200 V
Facility V1 3ø
To System
W1

Circuit MC
Protection Terminal
Block
Main Body
200/24 V Emergency OFF
Transformer
EMO1

This diagram represents the EMO2

operational components of
the EMO circuit.
EMO3
Actual components vary
depending on specific features
of the system ordered. EMO4
(Optional/
Accessory)
MC

ON OFF

which opens MC and the Emergency Power Dropout Contactor, shutting off power to the NSR.
Figure 1 shows the typical EMO circuit.

Figure 1
EMO Circuit

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MCSV-100 • Nikon

PREFACE

This Nikon® Step-and-Repeat Process Program Explanation guides Nikon customers and Nikon
personnel in the use and operation of NSR/MCSV series machines.

ORGANIZATION

This manual is organized as follows.

• Introduction – Introduction describes the notations used in this manual.

• Section 1 – Process Program describes the purpose of the Process Program, and explains
edit operations.

• Section 2 - Wafer Basic Data describes the content of the parameters for reticle basic data
and their specification method.

• Section 3 - Reticle Data describes the details and corrective actions for error processing.

• Section 4 - Wafer Alignment Data describes the content of parameters for wafer alignment
data and their specification method.

• Section 5 - Wafer Shot Map Data describes the content of the parameters for wafer shot data
and their specification method.

• Section 6 - Wafer Exposure Condition Data describes the content of the parameters for wafer
exposure condition data and their specification method.

• Section 7 - User Option Data describes the content of parameters for user option data and
their specification method.

NOTE
CRT displays are illustrated in this manual by gray boxes. All screen text is
indicated by a typeface that differs from the main text but resembles what you
see on the CRT display. CRT text shown without a gray box indicates information
that must be typed.

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MCSV-100 • Nikon

TABLE OF CONTENTS

INTRODUCTION

MANUAL CONFIGURATION

NOTATION IN THIS MANUAL

Basic Notations .............................................................................................................. 1-3

Notation of Process Program ......................................................................................... 1-3

COORDINATE SYSTEM OF MCSV

Relationship of Coordinate System ................................................................................ 1-4

SECTION 1 - PROCESS PROGRAM

1.1 EXPOSURE PROCESS AND PROCESS PROGRAM ................................................. 1-6

1.2 PP DATA AND PP ENTRY ............................................................................................ 1-6
1.2.1 PP Data Format ............................................................................................................. 1-7
1.2.2 PP Entry Format ............................................................................................................. 1-7
1.3 CONFIGURATION OF PROCESS PROGRAM SECTIONS ....................................... 1-10
1.3.1 Window Configuration .................................................................................................. 1-11
1.4 EDIT METHOD ............................................................................................................ 1-13
1.4.1 Edit Operation as PP Data ........................................................................................... 1-14
1.4.2 Edit Operation as PP Entry .......................................................................................... 1-27
1.5 INFORMATION CHECK AT-SECTION SELECT WINDOW ....................................... 1-41
1.5.1 Checking Layout Information of Shots ......................................................................... 1-42
1.5.2 Checking Major Data Items .......................................................................................... 1-43
1.5.3 Checking Exposure Conditions of Each Shot .............................................................. 1-44
1.5.4 Switching Scale Display ............................................................................................... 1-44
1.5.5 Enlarged Display of Shot Map ...................................................................................... 1-45

SECTION 2- WAFER BASIC DATA

2.1 DESCRIPTION OF PARAMETERS .............................................................................. 2-1

2.1.1 Wafer Shape (Basic Data) ............................................................................................. 2-2
2.1.2 Wafer Size (Basic Data) ................................................................................................. 2-3
2.1.3 Diameter (Basic Data) .................................................................................................... 2-4
2.1.4 Orientation Flat Direction (Basic Data) ........................................................................... 2-5
2.1.5 Orientation Flat Length (Basic Data) .............................................................................. 2-5
2.1.6 Step Pitch (Basic Data) .................................................................................................. 2-6

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2.1.7 Map Layout (Basic Data) ................................................................................................ 2-7

2.1.8 Map Offset (Basic Data) ................................................................................................. 2-9
2.1.9 Shot Offset (Shot Offset) .............................................................................................. 2-10
2.2 PARAMETER SPECIFICATION .................................................................................. 2-11
2.2.1 Precautions on Editing ................................................................................................. 2-13

SECTION 3 - RETICLE DATA

3.1 DESCRIPTION OF PARAMETERS .............................................................................. 3-1

3.1.1 Reticle Name (Reticle List) ............................................................................................. 3-2
3.1.2 Reticle Type (Reticle Parameter) ................................................................................... 3-3
3.1.3 Way of Check Area Specification (Reticle Parameter) ................................................... 3-3
3.1.4 Reticle Check Area (Reticle Parameter) ........................................................................ 3-4
3.1.5 Pellicle Check Area (Reticle Parameter) ........................................................................ 3-5
3.1.6 Alignment Adjustment (Reticle Parameter) .................................................................... 3-7
3.1.7 Particle Detecting Sensitivity (Pattern) (Reticle Parameter) ........................................... 3-8
3.1.8 Reticle Blind (Blind Data) ............................................................................................... 3-8
3.1.9 Blind Center Shift (Blind Data) ..................................................................................... 3-11
3.2 PARAMETER SPECIFICATION .................................................................................. 3-12

SECTION 4 - WAFER ALIGNMENT DATA

4 .1 DESCRIPTION OF PARAMETERS .............................................................................. 4-1

4.2 WAFER ALIGNMENT SENSOR ................................................................................... 4-2
4.2.1 Search Sensor (Sensor for Sequence) .......................................................................... 4-2
4.2.2 g-EGA Sensor (Sensor for Sequence) ........................................................................... 4-3
4.2.3 t-EGA Sensor (Sensor for Sequence) ............................................................................ 4-3
4.2.4 D/D Sensor (Sensor for Sequence) ............................................................................... 4-4
4.3 SEARCH ALIGNMENT DATA ....................................................................................... 4-5
4.3.1 Mark Position (Search Mark Data-ISA, FIA) .................................................................. 4-6
4.3.2 FIA Mark Center Shift (Search Mark Data-FIA) ............................................................. 4-8
4.3.3 FIA Signal Form (Search Mark Data-FIA) ...................................................................... 4-9
4.3.4 Mark Type (Search Mark Data-ISA, FIA) ....................................................................... 4-9
4.3.5 Mark Pitch (Search Mark Data-ISA, FIA) ..................................................................... 4-10
4.3.6 Mark Pitch Allowance (Search Mark Data-ISA, FIA) .................................................... 4-10
4.3.7 Mark Width (Search Mark Data-ISA, FIA) .................................................................... 4-10
4.3.8 Mark Width Allowance (Search Mark Data-LSA, FIA) .................................................. 4-11
4.3.9 Y-Theta Search Sequence (Search Parameter-LSA, FIA) ........................................... 4-11
4.3.10 Theta Mark Fixation (Search Parameter-ISA, FIA) ...................................................... 4-12
4.3.11 Search Mark Choice (Search Parameter-ISA, FIA) ..................................................... 4-12
4.3.12 Search Processing Algorithm (Search Parameter-ISA, FIA) ........................................ 4-13
4.3.13 Search Margin (Search Parameter-ISA, FIA) ............................................................... 4-15
4.4 FINE ALIGNMENT DATA (LSA) ................................................................................. 4-16
4.4.1 Number of EGA Marks (LSA Mark Data) ..................................................................... 4-17

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4.4.2 Mark Position (LSA Mark Data) .................................................................................... 4-17

4.4.3 Mark Type (LSA Mark Data) ........................................................................................ 4-18
4.4.4 Mark Pitch (LSA Mark Data) ........................................................................................ 4-19
4.4.5 Scanning Times (LSA Mark Data) ................................................................................ 4-19
4.4.6 Scanning Steps (LSA Mark Data) ................................................................................ 4-20
4.4.7 Result Allowance (LSA Mark Data) .............................................................................. 4-20
4.4.8 Processing Algorithm (LSA Parameter) ....................................................................... 4-21
4.4.9 Algorithm Slice Level (LSA Parameter) ........................................................................ 4-23
4.4.10 Processing Gate Width A, B (LSA Parameter) ............................................................. 4-24
4.4.11 Multimark Error Mode (LSA Parameter) ....................................................................... 4-25
4.4.12 Both Ends of Multimark (LSA Parameter) .................................................................... 4-25
4.4.13 EGA Reject (LSA Parameter) ...................................................................................... 4-26
4.4.14 EGA Reject Limit (LSA Parameter) .............................................................................. 4-26
4.4.15 EGA Requisite Shots (LSA Parameter) ....................................................................... 4-27
4.5 FINE ALIGNMENT DATA (FIA) .................................................................................. 4-28
4.5.1 Number of EGA Marks (FIA Mark Data) ...................................................................... 4-29
4.5.2 Mark Position (FIA Mark Data) ..................................................................................... 4-29
4.5.3 Mark Type (FIA Mark Data) .......................................................................................... 4-30
4.5.4 Mark Pitch (FIA Mark Data) .......................................................................................... 4-31
4.5.5 Mark Center Shift (FIA Mark Data) ............................................................................... 4-31
4.5.6 Signal Profile (FIA Mark Data) ..................................................................................... 4-31
4.5.7 Result Allowance (FIA Mark Data) ............................................................................... 4-32
4.5.8 Processing Algorithm (FIA Parameter) ........................................................................ 4-33
4.5.9 Algorithm Slice Level (FIA Parameter) ......................................................................... 4-33
4.5.10 Processing Gate Width B (FIA Parameter) .................................................................. 4-33
4.5.11 Edge Mode (FIA Parameter) ........................................................................................ 4-34
4.5.12 Contrast Limit (FIA Parameter) .................................................................................... 4-35
4.5.13 Number of Line Averaging (FIA Parameter) ................................................................. 4-35
4.5.14 EGA Reject (FIA Parameter) ........................................................................................ 4-36
4.5.15 EGA Reject Limit (FIA Parameter) ............................................................................... 4-36
4.5.16 EGA Requisite Shots (FIA Parameter) ......................................................................... 4-37
4.6 FINE ALIGNMENT DATA (LIA) .................................................................................. 4-38
4.6.1 Number of EGA Marks (LIA Mark Data) ....................................................................... 4-39
4.6.2 Mark Position (LIA Mark Data) ..................................................................................... 4-40
4.6.3 Result Allowance (LIA Mark Data) ............................................................................... 4-40
4.6.4 Processing Algorithm (LIA Parameter) ......................................................................... 4-40
4.6.5 Averaging Times (LIA Parameter) ................................................................................ 4-41
4.6.6 Measurement Time Interval (LIA Parameter) ............................................................... 4-41
4.6.7 EGA Reject (LIA Parameter) ........................................................................................ 4-41
4.6.8 EGA Reject Limit (LIA Parameter) ............................................................................... 4-42
4.6.9 EGA Requisite Shots (LIA Parameter) ......................................................................... 4-42
4.7 FINE ALIGNMENT DATA (TTR-LIA) .......................................................................... 4-43

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4.7.1 Mark Position (TTR-LIA Mark Data) ............................................................................. 4-44

4.7.2 Result Allowance (TTR-LIA Mark Data) ....................................................................... 4-44
4.7.3 Processing Algorithm (TTR-LIA Parameter) ................................................................ 4-44
4.7.4 EGA Reject (TTR-LIA Parameter) ................................................................................ 4-44
4.7.5 EGA Reject Limit (TTR-LIA Parameter) ....................................................................... 4-45
4.7.6 EGA Requisite Shots (TTR-LIA Parameter) ................................................................. 4-45
4.8 PARAMETER SPECIFICATION .................................................................................. 4-46
4.8.1 Operation Procedure .................................................................................................... 4-46

SECTION 5 - WAFER SHOT MAP DATA

5.1 DESCRIPTION OF PARAMETERS .............................................................................. 5-1

5.2 EXPOSURE ID ............................................................................................................... 5-3
5.2.1 Exposure ID ................................................................................................................... 5-4
5.3 ALIGNMENT ID ............................................................................................................. 5-5
5.3.1 Alignment ID ................................................................................................................... 5-5
5.4 OFFSET ID .................................................................................................................... 5-8
5.4.1 Offset ID ......................................................................................................................... 5-8
5.5 BLIND ID ........................................................................................................................ 5-9
5.5.1 Blind ID ........................................................................................................................... 5-9
5.6 PARAMETER SPECIFICATION .................................................................................. 5-10
5.6.1 Viewing Shot Map ........................................................................................................ 5-11
5.6.2 Wafer Shot Map Data Editing ....................................................................................... 5-11
5.6.3 Setting Alignment Shot Automatically .......................................................................... 5-15
5.6.4 Moving the Edit Area .................................................................................................... 5-20
5.6.5 Checking Shot Offset Specification .............................................................................. 5-21

SECTION 6 - WAFER EXPOSURE CONDITION DATA

6.1 DESCRIPTION OF PARAMETERS .............................................................................. 6-1

6.1.1 Exposure Method (Exposure Condition) ........................................................................ 6-5
6.1.2 Exposure Time (Exposure Condition) .......................................................................... 6-10
6.1.3 Focus Offset in Exposure (Exposure Condition) .......................................................... 6-11
6.1.4 Alignment Method (Exposure Condition) ..................................................................... 6-13
6.1.5 EGA Path (Exposure Condition) .................................................................................. 6-14
6.1.6 Focus Offset in Alignment (Exposure Condition) ......................................................... 6-14
6.1.7 Wafer Offset (Wafer Correction) .................................................................................. 6-15
6.1.8 Wafer Scaling (Wafer Correction) ................................................................................ 6-16
6.1.9 Wafer Orthogonality (Wafer Correction) ....................................................................... 6-17
6.1.10 Wafer Rotation (Wafer Correction) ............................................................................... 6-18
6.1.11 EGA Result Usage (Wafer)-Wafer Correction .............................................................. 6-19
6.1.12 Correction Fix (Wafer)—Wafer Correction) .................................................................. 6-20
6.1.13 Shot Scaling (Shot Correction) ..................................................................................... 6-21

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6.1.14 Shot Rotation (Shot Correction) ................................................................................... 6-22

6.1.15 EGA Result Usage (Shot)-Shot Correction .................................................................. 6-22
6.1.16 Correction Fix (Shot)-Shot Correction .......................................................................... 6-23
6.1.17 Estimated Wafer Scaling (Exposure Condition) ........................................................... 6-24
6.1.18 Leveling Mode (Leveling Correction) ........................................................................... 6-24
6.1.19 Leveling Offset (On)-leveling Correction ...................................................................... 6-24
6.1.20 Leveling Offset (Off) (Leveling Correction) ................................................................... 6-25
6.1.21 Leveling Coefficient Offset (Leveling Correction) ......................................................... 6-26
6.2 PARAMETER SPECIFICATION .................................................................................. 6-27

SECTION 7 - USER OPTION DATA

7.1 DESCRIPTION OF PARAMETERS .............................................................................. 7-1

7.2 EXTENDED EXPOSURE CONDITION DATA .............................................................. 7-3
7.2.1 Extended Exposure ........................................................................................................ 7-6
7.2.2 Exposure Time (Extended) ............................................................................................ 7-7
7.2.3 Focus Offset (Extended) ................................................................................................ 7-7
7.3 MULTIPOINT FOCUS DATA ....................................................................................... 7-10
7.3.1 Multipoint Focus ........................................................................................................... 7-10
7.3.2 ID Number .................................................................................................................... 7-10
7.4 EXTENDED EGA DATA .............................................................................................. 7-11
7.4.1 Multipoint EGA ............................................................................................................. 7-11
7.4.2 Shot Magnification Control ........................................................................................... 7-12
7.5 IMAGING SYSTEM CONTROL DATA ........................................................................ 7-13
7.5.1 Illumination ID .............................................................................................................. 7-13
7.6 EXTENDED SEQUENCE PARAMETER ..................................................................... 7-14
7.6.1 Extended Sequence Condition Name .......................................................................... 7-14
7.7 WAFER EDGE EXPOSURE DATA ............................................................................. 7-15
7.7.1 Wafer Edge Exposure .................................................................................................. 7-15
7.7.2 Edge Exposure Condition Name .................................................................................. 7-16
7.7.3 Exposure Time (Edge) ................................................................................................. 7-17
7.8 PARAMETER SPECIFICATION .................................................................................. 7-18

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FIGURES

SECTION 1 - PROCESS PROGRAM

1-1 Exposure Process and Process Program ...................................................................... 1-6

1-2 PP Data and PP Entry .................................................................................................... 1-9
1-3 Relationship of Windows to Edit Process Program ...................................................... 1-11
1-3 Relationship of Windows to Edit Process Program (continued) ................................... 1-12
1-4 Process Program (PP Data) Edit Flow ......................................................................... 1-15
1-5 PP Data Specification Window (Edit Process Program Function) ............................... 1-16
1-6 Section Select Window ................................................................................................ 1-21
1-7 Data Specification Window (for basic wafer data) ........................................................ 1-22
1-8 Process Program (PP Entry) Edit Flow ........................................................................ 1-28
1-9 PP Entry Specification Window (Load Function) .......................................................... 1-29
1-10 PP Entry Specification Window (Modify Function) ....................................................... 1-30
1-11 Section Select Window ................................................................................................ 1-33
1-12 Data Specification Window (Wafer Basic Data) ........................................................... 1-35
1-13 Section Select Window ................................................................................................ 1-41

SECTION 2 - WAFER BASIC DATA

2-1 Wafer Basic Data (When Wafer Shape (1) is Specified as “Circle”) .............................. 2-1
2-2 Wafer Basic Data (When Wafer Shape is Specified as “Square”) ................................. 2-2
2-3 Wafer Shape .................................................................................................................. 2-4
2-4 Map Layout (Even/ Odd Specification) ........................................................................... 2-8
2-5 Map Layout (Number of Shots Specification) ................................................................. 2-8
2-6 Example of Shot Offset ................................................................................................ 2-10
2-7 Wafer Basic Data Specification Window ...................................................................... 2-11

SECTION 3 - RETICLE DATA

3-1 Reticle Data (When Reticle Particle Inspection Area Independence Specification 2 is
“Common”) ........................................................................................................... 3-1
3-2 Reticle Data (When Reticle Particle Inspection Area Independence Specification is
“Separate”) ........................................................................................................... 3-2
3-3 Reticle Particle Inspection Area ..................................................................................... 3-5
3-4 Names of Inspection Faces ............................................................................................ 3-6
3-5 Reticle Data (Reticle Blind Specification) ....................................................................... 3-9
3-6 Exposure Area for Each Blind ID ................................................................................... 3-9
3-7 Wafer Shot Map Data Screen (Blind ID) ...................................................................... 3-10
3-8 Exposure Shot .............................................................................................................. 3-10
3-9 Example of Blind Center Shift ...................................................................................... 3-11
3-10 Reticle Data Specification Window .............................................................................. 3-12

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SECTION 4 - WAFER ALIGNMENT DATA

4-1 Wafer Alignment Sensor ................................................................................................ 4-2

4-2 Search Alignment Data (When Search Alignment Sensor Is Specified as LSA) ........... 4-5
4-3 Search Alignment Data (When Search Alignment Sensor is Specified as FIA) ............. 4-6
4-4 Search Alignment Mark Shape ...................................................................................... 4-7
4-5 Signal Waveform Example (Single Mark) .................................................................... 4-13
4-6 Signal Processing Margin (Triple Mark) ....................................................................... 4-15
4-7 Fine Alignment Data (When Fine Alignment Sensors Are Specified as LSA) .............. 4-16
4-8 Mark Position (Single Mark) ......................................................................................... 4-18
4-9 Mark Center ................................................................................................................. 4-18
4-10 Example of Fine Alignment Scanning .......................................................................... 4-20
4-11 LSA Signal Processing Algorithms ............................................................................... 4-22
4-12 Signal Data Types and Appropriate Signal Processing Algorithms ............................. 4-23
4-13 Fine Alignment Data (For FIA) ..................................................................................... 4-28
4-14 Mark Position ............................................................................................................... 4-30
4-15 Mark Center ................................................................................................................. 4-30
4-16 Fine Alignment Data (For LIA) ..................................................................................... 4-38
4-17 Fine Alignment Data (For TTR-LIA) ............................................................................. 4-43
4-18 Wafer Alignment Data Specification Window ............................................................... 4-46

SECTION 5 - WAFER SHOT MAP DATA

5-1 Wafer Shot Map Data ..................................................................................................... 5-2

5-2 Wafer Shot Map Data (During Exposure ID Editing) ...................................................... 5-3
5-3 Wafer Shot Map Data (During Alignment ID Editing) ..................................................... 5-5
5-4 s-shot Specification Area (Search Alignment Sensor = LSA, FIA) ................................. 5-6
5-5 Wafer Shot Map Data (During Offset ID Editing) ........................................................... 5-8
5-6 Wafer Shot Map Data (During Blind ID Editing) ............................................................. 5-9
5-7 Wafer Shot Map Data Specification Window ............................................................... 5-10
5-8 EGA Shot Number Specification Window .................................................................... 5-18

SECTION 6 - WAFER EXPOSURE CONDITION DATA

6-1 Wafer Exposure Condition Data (Page 1 of 3) (When Exposure Method Specification 1 is
Normal and Test-5) .............................................................................................. 6-1
6-2 Wafer Exposure Condition Data (Page 1 of 3) (When Exposure Method Specification . 6-2
6-3 Wafer Exposure Condition Data (Page 1 of 3) (When Exposure Method Specification 1 is
Test-2 and Test-4) ................................................................................................ 6-2
6-4 Wafer Exposure Condition Data (Page 1 of 3) (When Exposure Method Specification 1 is
Test-3) .................................................................................................................. 6-3
6-5 Wafer Exposure Condition Data (Page 2 of 3) ............................................................... 6-3
6-6 Wafer Exposure Condition Data (Page 3 of 3) (When Exposure Method Specification 1 is
Other Than “Test-5”) ............................................................................................ 6-4
6-7 Wafer Exposure Condition Data (Page 3 of 3) (When Exposure Method Specification 1 is
“Test-5”) ................................................................................................................ 6-4

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6-8 Example of “Normal” Exposure Method (Winding Stepping) ......................................... 6-7

6-9 Example of “Test-1” Exposure Method (Winding Stepping) ........................................... 6-8
6-10 Example of “Test-2” Exposure Method (Winding Stepping) ........................................... 6-8
6-11 Example of “Test-3” Exposure Method (Winding Stepping) ........................................... 6-9
6-12 Example of “Test-4” Exposure Method (Winding Stepping) ........................................... 6-9
6-13 Example of “Test-V Exposure Method (Winding Stepping) .......................................... 6-10
6-14 Wafer Exposure Condition Data Specification Window ............................................... 6-27

SECTION 7 - USER OPTION DATA

7-1 User Option Data Menu Window .................................................................................... 7-1

7-2 Extended Exposure Condition Data (When Exposure Method Specification is “Normal”
and “Test-5”) ......................................................................................................... 7-3
7-3 Extended Exposure Condition Data (When Exposure Method Specification is “Test-1”) 7-4
7-4 Extended Exposure Condition Data (When Exposure Method Specification is “Test-2”
and “Test-4”) ......................................................................................................... 7-5
7-5 Extended Exposure Condition Data (When Exposure Method Specification is “Test-3”) 7-6
7-6 Example of Extended Exposure Condition Data (Exposure Method = “Normal”) .......... 7-8
7-7 Example of Blind ID Specification .................................................................................. 7-9
7-8 Example of Extended Exposure (Exposure Method = “Normal”) ................................... 7-9
7-9 Multipoint Focus Data Window ..................................................................................... 7-10
7-10 Extended EGA Data Window ....................................................................................... 7-11
7-11 Imaging System Control Data Screen .......................................................................... 7-13
7-12 Extended Sequence Parameter Window ..................................................................... 7-14
7-13 Wafer Edge Exposure Data Window ............................................................................ 7-15
7-14 Wafer Edge Exposure .................................................................................................. 7-17
7-15 User Option Data Menu Window .................................................................................. 7-18

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TABLES

SECTION 1 - PROCESS PROGRAM

1-1 PP Data and PP Entry .................................................................................................... 1-8

SECTION 2 - WAFER BASIC DATA

2-1 Wafer Size ...................................................................................................................... 2-3

2-2 Standard Values for Wafer Size and OF Length ............................................................ 2-6

SECTION 3 - RETICLE DATA

3-1 Maximum Reticle Inspection Area (When PD or PPD is Used) ..................................... 3-6
3-2 Maximum Reticle Inspection Area (when PD5 is used) ................................................. 3-7

SECTION 4 - WAFER ALIGNMENT DATA

4-1 Available Sensors .......................................................................................................... 4-4

4-2 Example of Search Mark Choice Specification and Selection ..................................... 4-12
4-3 Signal Status and Signal Processing Algorithms (LSA) ............................................... 4-14
4-4 Signal Status and Signal Processing Algorithms (FIA) ................................................ 4-14
4-5 Definition of Algorithm Slice Level ................................................................................ 4-23
4-6 Definition and Standard Specification of Processing Gates A .............................................
and B .................................................................................................................. 4-24
4-7 Multimark Error Allowance Upon Measurement ........................................................... 4-25

SECTION 5 - WAFER SHOT MAP DATA

5-1 Correspondence Between Edit Mode and Shot ID ...................................................... 5-13

5-2 Automatic Setting Standard of s-shots ......................................................................... 5-15

SECTION 6 - WAFER EXPOSURE CONDITION DATA

6-1 Wafer Exposure Methods ............................................................................................... 6-7

6-2 Exposure Time Specification Details and Display ........................................................ 6-11
6-3 Focus Offset Specification Details and Display ............................................................ 6-12
6-4 Wafer Alignment Method and EGA Path ...................................................................... 6-14

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MCSV-100 • Nikon Process Program

INTRODUCTION

The NSR/ MCSV Process Program Explanation describes the Process Programs
used to determine the conditions of exposure in each process.

• Overview of Process Program

This section first describes the relationship between the Process Program
and exposure process, and the difference between Process Program data
and Process Program entry. An overview of the Process Program (Process
Program data and Process Program entry) edit operation is given.

• Description of Parameters
The meaning, usage, and limitations of each parameter of the Process
Program is described.

This manual is based on the NSR-2205i11 series.

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MANUAL CONFIGURATION

This NSR/ MCSV manual set has the following configuration:

• Description of System: Overview of machine configuration and functions of

the NSR.
Hardware System Explanation, Operation Explanation
These manuals describe the NSR hardware configuration and function. They
also include usage and basic maintenance.

• Description of Operation Method: The NSR operation method is described.

NSR/ MCSV Operation Explanation (Basic Operations) Describes the
configuration of MCSV, the main NSR software, as well as basic operation
methods.
NSR/ MCSV Operation Explanation (Command Operations) Describes the
function of each command.
NSR/ MCSV Operation Explanation (Assist Operations) Describes the assist
procedure for manual assist or error handling.

• Explanation of Functions: Explains the sequence of wafer exposure and the

details of this process.
NSR/ MCSV Function Explanation

• Description of Parameters: Describes each parameter to which MCSV refers.

NSR/ MCSV Process Program Explanation (This Manual)
The Process Program is information that determines the exposure process
conditions in each process. This manual describes the meaning, usage, and
limitation of individual parameters of the Process Program.
NSR/ MCSV System Parameter Explanation
System parameters determine the operation conditions of MCSV. This
manual explains the meaning, usage, and limitations of individual system
parameters.
NSR/ MCSV Machine Adjustment Parameter Explanation
Machine adjustment parameters adjust hardware settings for each machine.
This manual describes the meaning, usage, and limitations of individual
machine adjustment parameters.

• Error Code Explanation: Explains the meaning of the NSR/ MCSV error
codes and explains error handling.
NSR/ MCSV Error Code Handbook

• Option: Operation procedures for each option are described in a separate

volume.

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MCSV-100 • Nikon Process Program

NOTATION IN THIS MANUAL

To simplify descriptions, this manual uses the notations shown in the table below.

Basic Notations

Notation Description
Used to indicate a key on the keyboard, a button in a window, or a button o
the operation panel.
[ ]
Example: [F6] key, [EXECUTE exposure], and [EXEC] button.
↵ key Indicates the [Return] or [Enter] key on the keyboard.

x key Indicates the [Delete] key ’ ( ) on the keyboard.

Lists specification range or selections of a parameter. When there is a defa

value, the value is underlined.
◆
Example: ◆ -99.99 - 99.99
◆ 0.1, 2, 3 2

Describes a critical matter concerning an operation or term discussed in the

Caution
text.

Note Further explains an operation or term discussed in the text.

Parameter ID Parameter name Group name

1 Diameter Basic Data

◆ Parameter value Specifies a parameter value from either the

selections or the specification range. The
underlined value is the default value.

Notation of Process Program

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COORDINATE SYSTEM OF MCSV

MCSV uses the following coordinate system.

The positional relationship of each coordinate system is shown below. (Figure:

Relationship of Coordinate Systems.)

Reticle Coordinate System (Xr,Yr)

Orthogonal coordinate system with the

reticle center as the origin and the
Wafer Shot Coordinate System (Xw" Yw") coordinate system rotated 180º.
When this is projected onto the wafer
Orthogonal coordinate system with the center of surface, it agrees directionally with each
each shot as the origin. coordinate system on the wafer.
The wafer shot coordinate system is the image of
the reticle coordinate system reduced and
projected in reversed form onto the wafer. Thus,
Xr
positive and negative for X and Y directions in
the wafer shot coordinate system are reversed
in the reticle coordinate system. Yr
The shot center, furthermore, corresponds to the Wafer Coordinate System (Xw', Yw')
reticle center projected onto the water surface.
Orthogonal coordinate system with the
wafer center as the origin.
Yw"

Xw" Yw
Yw'

Xw'
Xw

Wafer Stage Coordinate System (Xw, Yw)

Orthogonal coordinate system with the wafer

stage coordinates as the origin when the wafer
center is roughly under the lens center.

Relationship of Coordinate System

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SECTION 1
PROCESS PROGRAM

This section presents an overview of the Process Program before providing a

detailed description of the individual parameters for the Process Program.

• How the Process Program Relates to the Exposure Process Flow

• Two Types of Process Program Edit Format (PP Data, PP Entry)
• Data Sections of Process Program
• Operation to Edit Process Program and Window Configuration

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1.1 EXPOSURE PROCESS AND PROCESS PROGRAM

The NSR unit is used to expose several different layers on a given product. Each
exposure process requires different conditions, such as reticle type and wafer
exposure conditions.

The Process Program (PP) is a set of parameters that specifies the exposure
conditions of each level of a product. These parameters specify such information
as the patterns of a reticle to be used, wafers to be exposed, the arrangement of
shots, and exposure conditions.

The Process Program is referred to during the exposure process flow as shown
in Figure 1-1.

Exposure Process Flow Process Program Information

Reticle Loading Information on reticle name and

reticle particle inspection

Information on reticle type and

Reticle Alignment
reticle alignment marks

Information on wafer size, OF, and

Wafer Loading
wafer edge exposure

Wafer Alignment Information on alignment method

alignment sensors, signal
processing, and alignment errors

Wafer Exposure Information on exposure shot

arrangement, D/D alignment,
exposure time, and reticle blinds.
Information on extended exposure

Figure 1-1 Exposure Process and Process Program

1.2 PP DATA AND PP ENTRY

A Process Program (PP) is stored to a file in one of the following formats

according to usage, and is used as exposure process conditions.

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1.2.1 PP Data Format

This format saves the process program in manageable units with the objective of
using it again.

One file (PDF: Process Data File) is created for each management unit (such as
product type), and related Process Programs are registered there. Up to a
maximum of 128 items can be registered in one file.

Process Programs registered in a PDF are called “Process Program data” (PP
data).

The EDIT command creates and manages the PP data.

1.2.2 PP Entry Format

The purpose of this format is to use a Process Program as temporarily

executable data.

NOTE
A PP entry has either temporary or permanent attributes depending on what is
specified at the time of registration. PP entries with temporary attributes are
erased from the PPL after they are used by the exposure command.

Of PP data created by the EDIT command, only the data required for the actual
exposure process is registered to a library and then used (PPL: Process Program
Library). Process Programs registered in the PPL are called “Process Program
entries” (PP entries). Up to 128 PP entries may be registered in a PPL.

After registering PP data as PP entries to the library, some of the PP data

parameters can be changed to rebuild Process Programs appropriate for the
current exposure process conditions.

The ENTER command performs this operation.

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MCSV-100 • Nikon Process Program

Table 1-1 PP Data and PP Entry

PP Data PP Entry
Edit Command EDIT Command ENTER Command
Saves Process Programs in Uses Process Program as
manageable units for future temporarily executable
Objective use. data.
Compiles PP data in
manageable units and Registers PP entry required
Data Configuration registers to a single PDF. for process to PPL.
Identification Name Process Program name PPL name: entry name

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MCSV-100 • Nikon Process Program

Process Program

PP Entry
PP Data

Modify some
parameters after
registering

Process Data File (PDF) Process Program Library (PPL)

Refer to
either one

Execute Exposure Processing

EXECUTE Command

CONTINUE Command

READY Command

RESERVE Command

Figure 1-2 PP Data and PP Entry

NOTE
A PP entry can also be saved in the PDF as PP data.

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1.3 CONFIGURATION OF PROCESS PROGRAM SECTIONS

A Process Program (PP data, PP entry) consists of the following six data
sections:

• Wafer Basic Data

Wafer related information such as wafer size, shot arrangement, and
stepping pitch.
• Reticle Data
Reticle related information such as reticle name, reticle type, and reticle blind
settings.
• Wafer Alignment Data
Wafer alignment related information, such as wafer alignment sensors, and
alignment algorithms.
• Wafer Shot Map Data
Wafer shot related information such as per-shot blind ID or offset ID, and
alignment shot arrangement.
• Wafer Exposure Condition Data
Exposure condition related information, such as exposure time and focus
offset.
• User Option Data
Option function related information, such as WEES, and extended exposure.

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1.3.1 Window Configuration

The relationship of windows to edit a Process Program is as follows:

-Edit Command- -Enter Command-

Edit Process Program Function Modify Function

PP Data Specification Window

PP Entry Specification Window

[Start] [Exit]
[Ok] [Exit]

[Basic]

[Ok]

Wafer Basic Data Specification Window Section Selection Window

[Reticle] [Alignment] [Ok]

[Ok]

Reticle Data Specification Window

Wafer Alignment Data Specification Window

Figure 1-3 Relationship of Windows to Edit Process Program

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MCSV-100 • Nikon Process Program

Selects user
[Option] option data to
be edited
[OK]

User Option Data

Menu Window
User Option Data
Specification Window

[Exp. Cond.]
[OK]

[Shot Map]

[OK]

Wafer Exposure Condition Data

Wafer Shot Map Data Specification Window
Specification Window

Figure 1-3 Relationship of Windows to Edit Process Program

(continued)

NOTE 1
It is also possible to open multiple data section specification windows at once.
Wafer basic data and wafer shot map data specification windows may not,
however, be opened simultaneously,

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1.4 EDIT METHOD

There are two types of Process Program edit methods:

• Edit as PP data
• Edit as PP entry
These Process Program edit methods are explained in the following sections.

NOTE
The flow of editing described here refers to a case where data sections are
edited one at a time.

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1.4.1 Edit Operation as PP Data

The sequence for editing process programs (PP data) using the EDIT command
is shown below.

NOTE
The flow of editing described here refers to a case where data sections are
edited one at a time.

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MCSV-100 • Nikon Process Program

Start EDIT command 1

(PP data specification window is displayed)

Select Edit Process function 2

Specify process name and program 3

name of PP data to be edited

Start edit 4

(Section select window is displayed)

Select data section to be edited 5

(Data edit window is displayed at each data section)

Specify parameters 6

End edit at data section 7

Yes
Edit another data section?

No

End edit 8

End EDIT command 9

Figure 1-4 Process Program (PP Data) Edit Flow

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The editing procedure is as follows:

1. Starting EDIT Command

a. Set the pointer to [DATA] of the command group buttons, and click.

Command
Group Buttons

Command buttons of the DATA group are displayed.

b. Set the pointer to [EDIT process data file] of the command buttons, and
click.

Command
Buttons

The EDIT command starts and the PP data specification window is displayed
(Figure 1-5).

Displays PP data list or Displays log Ends EDIT Executes

PDF data list command function

Figure 1-5 PP Data Specification Window (Edit Process Program

Function)

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MCSV-100 • Nikon Process Program

2. Selecting Edit Process Program Function

a. Set the pointer to [Edit Process Program] of the function buttons, and click.
The display of the process target specification area changes to the display of
the Edit Process Program functions.
Fuction
Buttons

Proccessing
Specification
Area

3. Specifying Process Name and Program Name of PP Data for Edit To edit
existing PP data, specify the Process Name and the Program Name of the
PP data to be edited. To create new PDF or PP data, specify new Process
Names and the Program Names.

Default directory

PP data name entry

These names are specified either by direct input or by selecting from a list.

NOTE
When editing PP data not in the default directory, it is necessary to specify a
directory. For details on specifying a directory, see Operation Description (Basic
Operation), Specifying the Process Program.

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MCSV-100 • Nikon Process Program

a. Direct Input
1. Set the pointer to the PP data name area, and click. The Process Name
and the Program Name of the PP data to be edited can now be specified.

1 to 12 alphanumeric Period 1 to 12 alphanumeric

and special characters and special characters
(Note 1) (Note 2)

NOTE
1. There are two special characters that may be specified in the process name:
“_” and “_”. However, “_” may not be used as the first character of the name.

2. There are in total five special characters that can be used; two of these can be
used without any problems whatsoever,-the remaining three should not be used
(as they are reserved for functions that will be added later).

• Special characters usable without any problems: “_” and “-”.

• Special characters that should not be used: “+”, “<”, and “>”.

b. Selecting From a List

1. Set the pointer to [List], and click. The PP data list window is displayed.
2. Specify the Process Name and Program Name.

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MCSV-100 • Nikon Process Program

For details on each specification method, see Process Program Specification of

the Operation Description (Basic Operation).

4. Edit Start Command

After the PP data name of PP data edit target is specified, start the edit
program using the following procedure:
a. Click [Start].

Executes function

The Section Select window is displayed (Figure 1-6). It is now possible to edit
parameters of specified PP data. If the Process Name and Program Name
specified do not exist, however, the PDF and PP data must be newly
created. This newly created data can then be edited. In this case, a window
will appear asking the operator if it is okay to create new PP data.

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MCSV-100 • Nikon Process Program

Name of newly created PP data

Creates new PP Returns operator to PP

data data specification
window without creating
new PP data

Check the message, then click [OK] or [Cancel].

5. Select Data Section

a. In the Section Select window, click the button of the data section to be
edited (Figure 1-6).
In the Section Select window, it is also possible to perform the following
operations for verification of information about the PP data edited:

• Shot layout information checks.

• Verification of main data.
• Verification of shot exposure conditions.
• Scale display selection.
• Enlarged shot map display.

See 1.5, “Information Check at Section Select Window,” for the procedure for
editing data sections and for the information displayed in Section Select
windows as well as a detailed procedure for checking this information.

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MCSV-100 • Nikon Process Program

Created/Copied
Process Target PP Entry Name Date and Time Updated Date and Time

Comment

Clears enlarged display

Wafer Range Displayed

on Shot Map

Maindata

Edits user option data Ends edit without

Edits wafer saving edited data
alignment data

Edits reticle data Edits wafer exposure Ends edit after saving edited
condition data data to PDF

Edits wafer basic data Edits wafer shot map data

Figure 1-6 Section Select Window

In the Section Select window, click the button corresponding to the data section
to be edited.

The specification window for the data section selected will be displayed (Figure
1-7).

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MCSV-100 • Nikon Process Program

6. Specifying Parameters
Specify parameters as displayed here.

Renders data edited in the data section valid

and checks its validity. (Note)
Continues data section edit.

Figure 1-7 Data Specification Window (for basic wafer data)

NOTE
Data displayed in the Section Selection window is updated according to the data
specified.

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MCSV-100 • Nikon Process Program

For details on the specification method at each data section, see the following
sections:

• Wafer Basic Data 2.2 “Parameter Specification”

• Reticle Data 3.2 “Parameter Specification”
• Wafer Alignment Data 4.8 “Parameter Specification”
• Wafer Shot Map Data 5.6 “Parameter Specification”
• Wafer Exposure Condition Data 6.2 “Parameter Specification”
• User Option Data 7.8 “Parameter Specification”

Clicking [Apply] during the data section editing procedure will put into effect
editing changes made up to that point.

7. Ending Edit at Data Section

Edit at each data section is ended using the following procedure:
a. Click one of the following buttons in the edit window at each data section.

Ignores data edited in the data Registers data edited in the data section,
secton and ends data section checks its validity, and ends data section
edition. (Note 1) editing. (Note 2)
Returns operator to the Returns the operator to the Section Select
Section Select window. window.

NOTE 1
When [Apply] was clicked during data section editing, this will only cancelediting
changes made since [Apply] was clicked.

NOTE 2
Data displayed in the Section Selection window is updated according to the data
specified.

Repeat operations 5 to 7 to edit data at the desired data sections.

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MCSV-100 • Nikon Process Program

8. Ending Edit
When editing of all desired data sections is complete, end PP data editing by
the following procedure:
a. Click [Exit] in the Section Select window.

NOTE
Click [Quit] in the Section Select window to quit editing without saving the edited
data. The following window is displayed. Click [OK].

Ends editing without Cancels quit operation,

saving changes returning the operator to
the Section Select
window

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MCSV-100 • Nikon Process Program

Changes are saved in the process data file, and the Select Section window
closes, returning the operator to the PP data specification window.

NOTE
The following window is displayed if there is an error in the edited data. Check
the message displayed, then Click either [OK] or [Cancel].

Message
about error

Saves changes then Cancels quit operation,

ends edit returning the operator to
the Section Select window

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MCSV-100 • Nikon Process Program

9. Ending EDIT Command

The EDIT command is ended using the following procedure:

Ends command
(Note 1)

NOTE 1
Changes made by the Edit Process Program function are saved.

NOTE 2
The editing flow described here applies to a case where data sections are edited
one by one.

a. Click [Cancel] in the PP data specification window. The Edit command

ends and the PP data specification window closes.

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MCSV-100 • Nikon Process Program

1.4.2 Edit Operation as PP Entry

The flow of Process Program (PP entry) editing via the ENTER command is
shown below.

NOTE
The flow of editing described here refers to a case where data sections are
edited one at a time.

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MCSV-100 • Nikon Process Program

Start EDIT command 1

(PP entry specification window is displayed)

Select Modify function 2

Specify entry name

3
of PP entry to be edited

Start edit 4

(Section select window is displayed)

Select section to be edited 5

(Data specification window is displayed at each data section)

Specify parameters 6

End edit at data section 7

Yes
Edit another data section?

No

End edit 8

End ENTER command 9

Figure 1-8 Process Program (PP Entry) Edit Flow

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MCSV-100 • Nikon Process Program

The ENTER operation procedure is as follows:

1. Starting ENTER Command

a. Click the command group [DATA] button (Note 1).

Command
Group Buttons

Command buttons of the DATA group are displayed.

b. Click the [ENTER Process Program] command button.

Command
Buttons

The ENTER command starts and the PP entry specification window is displayed
(Figure 1-9).

Displays PP entry list Displays log Ends ENTER Executes

or PP data list command function

Figure 1-9 PP Entry Specification Window (Load Function)

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MCSV-100 • Nikon Process Program

2. Selecting Modify Function

a. Set the pointer to [Modify] of the function buttons, and click. The display of
the process target specification area changes to that for Modify (Figure 1-10).
Function
Buttons

Processing
Specification
Area

Figure 1-10 PP Entry Specification Window (Modify Function)

3. Specifying Entry Name

Specify the entry name of the PP entry to be edited.

Entry name area

Displays PP entry list

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MCSV-100 • Nikon Process Program

Specify the PP entry name using either of the following methods:

a. Direct Entry
1. Specify the entry name of the target PP entry in the entry name area.
◆ 1 to 16 alphanumeric characters, spaces, and special

character (s)

b Select from List

1. Click [LIST].
The PP entry list window is displayed.
2. In the PP entry list window, select the name of entry to be edited.

See Operation Description (Basic Operation), Process Program Specification

Method for more information on specifying PP entry names.

4. Edit Start Command

After the entry name of the edit target PP entry is specified, start editing
according to the following procedure.

a. Click [OK].

Executes function

The Section Select window is displayed (Figure 1-9) and the specified PP entry
can now be edited (Figure 1-11).

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MCSV-100 • Nikon Process Program

NOTE
If the PP entry specified is currently in use, the following confirmation request
window will appear:

5. Selecting Data Section

From Section Select window, select the data section to be edited, then edit
the PP entry

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Created/Copied
Process Target PP Entry Name Date and Time Updated Date and Time

Comment

Clears enlarged display

Wafer Range Displayed

on Shot Map

Maindata

Edits user option data Ends edit without

Edits wafer saving edited data
alignment data
Edits wafer exposure Ends edit after saving edited
Edits reticle data
condition data data to PPL

Edits wafer basic data Edits wafer shot map data

Figure 1-11 Section Select Window

In the Section Select window, it is also possible to perform the following

operations for the PP entry to be edited:

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MCSV-100 • Nikon Process Program

• Shot layout information checks.

• Verification of main data.
• Verification of shot exposure conditions.
• Scale display selection.
• Enlarged shot map display.

See 1.5, “Information Check at Section Select Window,” for the operation
procedure for editing data sections and for the information displayed in Section
Select windows as well as a detailed procedure for checking this information.

a. In the Section Select window, click the button corresponding to the data
section to be edited.

The window for the data section selected will be displayed (Figure 1-12).

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6. Specifying Parameters
Specify the parameters of the data section displayed.

Applies edited data to the PP and checks its

validity. (Note)
Continues data section edit.

Figure 1-12 Data Specification Window (Wafer Basic Data)

NOTE
Data displayed in the Section Selection window is updated with the new data that
was entered.

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For details on the specification method at each data section, see the following
sections:

• Wafer Basic Data 2.2 “Parameter Specification”

• Reticle Data 3.2 “Parameter Specification”
• Wafer Alignment Data 4.8 “Parameter Specification”
• Wafer Shot Map Data 5.6 “Parameter Specification”
• Wafer Exposure Condition Data 6.2 “Parameter Specification”
• User Option Data 7.8 “Parameter Specification”

Clicking [Apply] during the data section editing procedure will put into effect
editing changes made up to that point.

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7. Ending Data Section Editing

Editing of each data section is ended using the following procedure:
a. Click one of the following buttons in the edit window at each data section
(Figure 1-10).

Ignores data edited in the data

section and ends data section Registers data edited in the data section,
editing. (Note 1) checks the validity of it, and ends data
Returns operator to the section editing. (Note 2)
Section Select window. Returns the operator to the Section Select
window.

NOTE 1
When [Apply] was clicked during data section editing, this will only cancel editing
changes made since [Apply] was clicked.

NOTE 2
Data displayed in the Section Selection window is updated according to the data
specified.

Repeat operations 5 to 7 to edit data at the desired data section.

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8. Ending Editing
When editing of all desired data sections is complete, end PP data editing by
the following procedure:
a. Click [Exit] in the Section Select window.

NOTE
Click [Quit] in the Section Select window to quit editing without saving the edited
data. The following window is displayed. Click [OK].

Ends editing without Cancels quit operation,

saving changes returning the operator to
the Section Select
window

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Changes are saved in the process data file, and the Select Section window
closes, returning the operator to the PP data specification window.

NOTE
The following window is displayed if there is an error in the edited data. Check
the message displayed, then Click either [OK] or [Cancel].

Message
about error

Saves changes then Cancels quit operation,

ends edit returning the operator to
the Section Select window

9. Ending ENTER Command

The ENTER command is ended using the following procedure:

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MCSV-100 • Nikon Process Program

Ends command
(Note 1)

NOTE 1
Changes made by the Modify function are saved.

a. Click [Cancel] in the PP entry specification window. The ENTER command

ends and the PP entry specification window closes.

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MCSV-100 • Nikon Process Program

1.5 INFORMATION CHECK AT-SECTION SELECT WINDOW

The following operations concerning the checking of processing target process

programs are possible from the Section Select window (Figure 1-11):

• Layout Information of Shots

• Major Data
• Exposure Conditions of Shots
• Scale Display Switching
• Enlarged Display of Shot Map
Process Target PP Data Name Created/Copied Wafer Range Displayed on Shot Map.
or PP Entry Name Date and Time See "Enlarged Display of Shot Map"

Comment

Date and Time of Update

Maindata

Major Data
See "Checking Major Data"

Figure 1-13 Section Select Window

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MCSV-100 • Nikon Process Program

1.5.1 Checking Layout Information of Shots

Scale
Can select either [mm] or [column/row]
See Switch Scale Display

Alignment Mark
Separately change Search, g-EGA,
t-EGA, and D/D to different colors
See Checking Major Data

Exposure Area

Step Pitch Wafer Exterior

Display lattice on Shot Map by OF length, OF direction, and
step pitch width wafer shape are displayed

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MCSV-100 • Nikon Process Program

1.5.2 Checking Major Data Items

The major data items of the Process Program are displayed. For data content,
see the description of each parameter.

1. See Wafer Size/ Wafer Size (Basic Data) later in this manual
2. See Step Pitch/ Step Pitch (Basic Data) later in this manual.
3. See Exposure Method/ Exposure Method (Exposure Condition) later in this
manual
4. See Exposure Time/ Exposure Time (Exposure Condition) later in this
manual
5. See Focus Offset in Exposure/ Focus Offset (During Exposure) (Exposure
Condition) later in this manual
6. See Alignment Method/ Wafer Alignment Method (Exposure Condition) later
in this manual
7. See Search Sensor/ Search Alignment Sensor (Sensor for Sequence) later in
this manual
8. See g-EGA Sensor/ g-EGA Sensor (Sensor for Sequence) later in this
manual.
9. See t-EGA Sensor/ t-EGA Sensor (Sensor for Sequence) later in this
manual.
10. See D/ D Sensor/ D/ D Sensor (Sensor for Sequence) later in this manual.
1
2

3
4
5
6
7
8
9
10

Color of Alignment Mark Display

Display color of alignment mark
displayed on shot map.

See “Checking Layout Information of Shots”.

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1.5.3 Checking Exposure Conditions of Each Shot

Shot Position
Blind ID
Offset ID
Alignment ID
Exposure Time

Focus Offset

Detailed Information Display Window

The operation is as follows:

1. In the Section Select window, double-click the target shot on the shot map,
whose exposure is to be checked. The detailed information display window is
displayed.
2. After the exposure conditions are checked, click [OK] in the detailed
information display window. The window disappears.

1.5.4 Switching Scale Display

There are two scale displays for the shot map in the Section Select window: [mm]
and [column/ row]. Click either one of the scales to toggle between these two
displays.

Scales

[mm] Display [column/row] Display

The operation is as follows:

1. Position the pointer over the scale and click the mouse button. The scale
display switches each time the mouse button is clicked.

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1.5.5 Enlarged Display of Shot Map

An enlarged part of the shot map can be displayed on the screen.

The operation is as follows.

1. Drag the mouse (cursor) over the shot map in the section select window, and
surround the target enlarged display area with a rectangle. The selected
rectangle (area) expands filling the shot map display area.

NOTE
Magnification is automatically selected so that the long side of the selected
rectangle (area) fills the shot map.

The map above and to the right of the shot map shows which part of the shot
map is currently being displayed.

Zoom Display

Area selected by dragging the

mouse

Operating the scroll bar can also be used to move the range of the enlarged
display area.

2. To return to the original display (clear enlarged display), click [Map View] in
the section select window.

Click to clear enlarged display

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MCSV-100 • Nikon Wafer Basic Data

SECTION 2
WAFER BASIC DATA

Wafer basic data consists of information such as wafer size and shot
arrangement.

This section describes parameters for wafer basic data and their specification.

2.1 DESCRIPTION OF PARAMETERS

1
2
3
4
5

7 9

Figure 2-1 Wafer Basic Data (When Wafer Shape (1) is Specified as
“Circle”)

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1
2
3

Figure 2-2 Wafer Basic Data (When Wafer Shape is Specified as

“Square”)

NOTE
Items 4, 5, 7, 8, and 9 do not appear in Figure 2-2.

Wafer basic data has the following information.

2.1.1 Wafer Shape (Basic Data)

1 Wafer Shape Basic Data

Item 1 of Figures 2-1 and 2-2; specify one of the following settings for the wafer
shape (Figure 2-3):

◆ Circle circular wafer

◆ Square square wafer

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2.1.2 Wafer Size (Basic Data)

2 Wafer Size Basic Data

Item 2 of Figures 2-1 and 2-2; specifies the wafer size.

◆ 50.8/2”
◆ 76.2/3”
◆ 100.0/4”
◆ 125.0/5”
◆ 150.0/ 6"
◆ 200.0/ 8”
◆ direct . .. 0. 01 -1000.0 [mm]

When the wafer shape specification is “Circle”, the wafer size is specified by
diameter. (See “Wafer Shape/ Wafer Shape (Basic Data)” later in this section.)
When the wafer shape specification is “Square”, the wafer size is specified by the
length of one side (Figure 2-3). Specification is in mm or inch units, but the
display is always in mm. Table 2-1 shows the standard wafer sizes.

Table 2-1 Wafer Size

Wafer Size (inch) Wafer Size (mm)

2 50.8
3 76.2
4 100
5 124
6 150
8 200

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MCSV-100 • Nikon Wafer Basic Data

(Circular Wafer) (Square Wafer)

Wafer Shape 1 = "Circle" Wafer Shape 1 = "Square"

Figure 2-3 Wafer Shape

2.1.3 Diameter (Basic Data)

3 Diameter Basic Data

Item 3 of Figures 2-1 and 2-2 (exposure control area); specifies the size of the
exposure area when initializing the wafer shot map. This specifies the outer
border of the shot array.

NOTE
The exposure control area is only referred to for determining the wafer shot map.
This parameter performs no control function during wafer shot map editing.

◆ 0-1000.000 [mm]

When the wafer shape setting is “Circle”, the exposure area is specified by the
diameter of the area; and when the wafer shape setting is “Square”, the exposure
area is specified by the length of one side of the area (Figure 2-3). (See “Wafer
Shape/ Wafer Shape (Basic Data)” later in this section.)

If "0" is specified, however, the entire wafer becomes the exposure area.

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MCSV-100 • Nikon Wafer Basic Data

2.1.4 Orientation Flat Direction (Basic Data)

4 Orientation Flat Direction Basic Data

Item 4 of Figure 2-1; specifies the direction of the orientation flat (OF) or the
direction of the notch of a wafer on a stage.

◆ Front
◆ Left (Option)
◆ Back (Option)
◆ Right (Option)
◆ Other (Option) When the specification of the machine is different.

This parameter is valid only when wafer shape 1 is specified as “Circle”. See
“Wafer Shape/ Wafer Shape (Basic Data)”.

2.1.5 Orientation Flat Length (Basic Data)

5 Orientation Flat Length Basic Data

Item 5 of Figure 2-1; when wafer shape 1 is specified as “Circle”, the standard
OF length that corresponds to wafer size 2 is displayed as the default.

NOTE
Standard values are based on SEMI standards.

NOTE
In the following cases, zero is displayed as the default value for this parameter.

• When wafer size 1 is set to a nonstandard specification.

• When OF direction 4 is set to “Other. ”

See “Wafer Shape/ Wafer Shape (Basic Data)”. Set this parameter when a
wafer with an OF length which is different from the standard is used.

◆ 0-1000000.0 [µm]

(Note, however, that wafer size 2 is the maximum value) Specify “0” for notch
wafers.

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MCSV-100 • Nikon Wafer Basic Data

Table 2-2 shows OF length standard values for wafer sizes.

Table 2-2 Standard Values for Wafer Size and OF Length

Distance from Center

Wafer Size OF Length of Circular of Circular Wafer to
(inch) Wafer Size (mm) Wafer (µm) OF (µm)
2 50.80 15874.46 24128.00
3 76.20 22225.02 36443.41
4 100.00 32500.01 47285.70
5 124.00 42500.00 48776.59
6 150.00 57499.99 69270.76
8 200.00 57500.01 95778.06

NOTE
Standard values are based on SEMI standards.

This parameter can be specified only when wafer shape 1 is “Circle.”

2.1.6 Step Pitch (Basic Data)

6 Step Pitch Basic Data

Item 6 of Figures 2-1 and 2-2; the step length between shots on a wafer is
specified for X and Y directions.

◆ 0.01 ~ 9999999999.999 [µm] (wafer coordinates)

Px Px Px Px

Py

Py

Py

Py

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MCSV-100 • Nikon Wafer Basic Data

2.1.7 Map Layout (Basic Data)

7 Map Layout Basic Data

Item 7 of Figure 2-1; the number of columns and rows on a shot map is specified
for X (number of columns) and Y (number of rows) directions. (Figures 2-4, 2-5)

◆ Odd Specifies odd number of rows or columns on center axis of wafer

◆ Even Specifies even number of rows or columns on center axis of
wafer
◆ direct . .. 1 ~ 9999 (shots) Number of shots is directly specified

The size of the created shot map varies according to the specification of this
parameter.

• In the case of odd or even specification: A shot map appropriate for wafer
size 2 and step pitch 6 is created.
• In the case of direct specification:
The array count specified by this parameter creates a shot map (of the
arranged size) according to the step pitch.

The center of the shot map arrangement calculated by this parameter is the map
center.

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MCSV-100 • Nikon Wafer Basic Data

Figure 2-4 Map Layout (Even/ Odd Specification)

Figure 2-5 Map Layout (Number of Shots Specification)

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MCSV-100 • Nikon Wafer Basic Data

2.1.8 Map Offset (Basic Data)

8 Map Offset Basic Data

Item 7 of Figure 2-1; specifies the amount (map offset) the map center is to be
shifted from the wafer center in the X and Y directions.

◆ -999999999.999 -9999999999.999 [µm] (Wafer Coordinate System)

The default shot map is created with the map center as the wafer center.
Specifying this parameter enables the map center to be shifted from the wafer
center.

Y Map Center
(Shifted from Wafer Center
by Map Offset)

Map Offset
(Both X and Y
are positive) X

Wafer Center

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2.1.9 Shot Offset (Shot Offset)

9 Shot Offset Shot Offset

Item 9 of Figure 2-1; specifies the shot exposure position and the alignment
position offset (shot offset) (see Figure 2-6).

◆ -999999999.999 ~ 9999999999.999 [µm] (Wafer Coordinate System)

There are 16 offset I Ds: * and A through O. Offset IDs A through O specify
separate offsets for X and Y; “*” offset ID results in a shot offset of 0.
++
+ * * *A+
* * * * *A *+
* * * * *A * *
+* * * * *A * * +
+* * * * *BBBB
* * * * * ** *
+* * * * **+
+* * * *+
++

Exposed Shot

Offset ID on Wafer Shot Map

Shot Offset 9

Figure 2-6 Example of Shot Offset

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MCSV-100 • Nikon Wafer Basic Data

2.2 PARAMETER SPECIFICATION

Click [Basic] in the Section Select window to display the Wafer Basic Data
Specification window (Figure 2-7).

NOTE
The Wafer Basic Data Specification window may not be displayed when the
Wafer Shot Map Data Specification window is displayed.

Figure 2-7 Wafer Basic Data Specification Window

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MCSV-100 • Nikon Wafer Basic Data

Specify parameters according to the following procedure:

a. Click the parameter area to be modified.

b. Specify the parameter.
c. Repeat steps 1 and 2.
d. Select one of the following buttons when parameter specification is complete.

Cancels edited data and Accepts edited data and

ends data section ends data section
editing (Note) editing (Note)

NOTE
When [Apply] was clicked during data section editing, only editing performed
after [Apply] was pressed is canceled.

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MCSV-100 • Nikon Wafer Basic Data

2.2.1 Precautions on Editing

Note the following when editing wafer basic data:

• Initialization of Shot Map Due to Parameter Change

When the following wafer basic data is changed, the current values for the wafer
shot map data-exposure ID, alignment ID, offset ID, and blind ID-are erased and
initialized.

• Wafer Shape
• Wafer Size
• Step Pitch
• Map Layout
• Map Offset
Exposure ID (focus shot, focus fixed shot, unexposable shot) is automatically set
upon initialization, The alignment ID, offset ID, and blind ID are set to (*), no
setting, for all shots.

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MCSV-100 • Nikon Reticle Data

SECTION 3
RETICLE DATA

Reticle data consists of information on reticles such as reticle names and reticle
types.

This section describes parameters for reticle data and their specification
methods.

3.1 DESCRIPTION OF PARAMETERS

2
3

1 4

6
7

8 9

Figure 3-1 Reticle Data (When Reticle Particle Inspection Area

Independence Specification 2 is “Common”)

NOTE
Item 5 is not used in Figure 3-1.

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MCSV-100 • Nikon Reticle Data

2
3

1 4
5

6
7

Figure 3-2 Reticle Data (When Reticle Particle Inspection Area

Independence Specification is “Separate”)

NOTE
Items 8 and 9 are not used in Figure 3-2.

The reticle parameters are as follows:

3.1.1 Reticle Name (Reticle List)

1 Reticle Name Reticle List

Item 1 in Figures 3-1 and 3-2; specifies the reticle name used by blind ID.
◆ 1 to 64 alphanumeric characters, spaces, and special characters.
The name of the reticle used must be specified for all blind ID entry items used in
exposure.

Special characters “*” and “%” are recognized as wild cards during reticle
processing. When using a character specified by the reticle name delimiter, all
characters after that character are judged as comments during reticle processing.

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MCSV-100 • Nikon Reticle Data

3.1.2 Reticle Type (Reticle Parameter)

2 Reticle Type Reticle Parameter

Item 2 in Figures 3-1 and 3-2; specifies the reticle type.

Reticle type corresponds to reticle size, field size, and reflection characteristics of
reticles

◆ 1 to 16 alphanumeric characters
The following is a listing of the standard Nikon reticle types:

For body 11 series steppers:

• STD 5 inch 15 by 15 mm
• STD17 5 inch 17.5 by 17.5 mm
• STD20 5 inch 20 by 20 mm
• STD20H 6 inch 21.2 by 21.2 mm
• STD22 6 inch 22 by 22 mm

NSR-M (4425i)

• STD40 5 inch 40 by 40 mm
• STDH40 5 inch 40 by 40 mm high reflectance
• STDL40 5 inch 40 by 40 mm low reflectance
• STD44 6 inch 44 by 44 mm
• STDH44 6 inch 44 by 44 mm high reflectance
• STDL44 6 inch 44 by 44 mm low reflectance

3.1.3 Way of Check Area Specification (Reticle Parameter)

3 Way of Check Area Specification Reticle Parameter

Item 3 in Figures 3-1 and 3-2; specifies whether to individually set particle
inspection areas for both reticle faces (glass and pattern faces) and pellicle faces
(glass side and pattern side pellicle faces).

NOTE
The independence of the reticle particle inspection area under the Examine
command is determined by the reticle particle inspection area specification
method (Examine).

◆ Common Specify common Reticle particle inspection area is commonly used

as the pellicle particle inspection area.
◆ Separate Specify separately

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MCSV-100 • Nikon Reticle Data

3.1.4 Reticle Check Area (Reticle Parameter)

4 Reticle Check Area Reticle Parameter

Item 4 in Figures 3-1 and 3-2; specifies reticle particle inspection area under the
Execute, Ready, and Reserve commands, for determining the positive and
negative X, Y borders of the inspection area. (Figure 3-3)

◆ -99-99 [mm] (reticle coordinate system)

This parameter is used as shown below, depending on the specification of reticle
particle inspection area independency. See Check Area Specification/ Reticle
Particle Inspection Area Independency (Reticle Parameter) later in this section.

• When Way of Check Area Specification is set to “Separate”:

The inspection area specified by this parameter is only for inspection of reticle
faces (glass and pattern faces). (Figure 3-4) Particles on the glass faces of 6 inch
reticles are normally inspected at low sensitivity, and Pellicle Check Area 5 is
used for this purpose.

NOTE
Pellicle Check Area 5 typically applies to glass surfaces of 6-inch reticles as well.
Reticle Check Area 4 applies only when the PD5 series (which has been
adjusted to inspect glass surfaces of 6-inch reticles at high sensitivity) is the
reticle particle inspection unit.

• When Way of Check Area Specification is specified as “Common”:

The inspection area specified by this parameter is commonly used for the
inspection of both reticle faces (glass and pattern faces) and pellicle faces
(glass side pellicle and pattern side pellicle faces). In this case, the item
name of this parameter becomes “Check area”.

Maximum inspection areas that can be specified by this parameter are shown in
Tables 3-1 and 3-2.

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MCSV-100 • Nikon Reticle Data

3.1.5 Pellicle Check Area (Reticle Parameter)

5 Pellicle Check Area Reticle Parameter

Item 5 in Figure 3-2; specifies the pellicle particle inspection area when Way of
Check Area Specification 3 is set to ‘Separate” under the Execute, Ready, and
Reserve commands.

NOTE
Pellicle Check Area 5 typically applies to glass surfaces of 6-inch reticles as well.
Reticle Check Area 4 applies on/ y when the PD5 series (which has been
adjusted to inspect glass surfaces of 6-inch reticles at high sensitivity) is mounted
on the reticle particles inspection unit.

◆ -99 ~ 99 [mm] (Reticle Coordinate System)

The inspection area is specified for determining the positive and negative X, Y
borders of the inspection area. (Figure 3-3) Tables 3-1 and 3-2 show the
maximum inspection area that can be specified by this parameter.

NOTE
When the specification for this parameter exceeds the maximum inspection area,
the maximum inspection area will apply.

X+ X-

Reticle
Y-
X Reticle Alignment Mark X1 Y1

Reticle Alignment Mark X2 Y2

Y+

Y
<Reticle Coordinate System>

Figure 3-3 Reticle Particle Inspection Area

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MCSV-100 • Nikon Reticle Data

Reticle Without Pellicle

Glass Face

Pattern Face

Reticle With Pellicle on Pattern Side

Glass Face

Pattern Face
Pattern Side Pellicle Face

Reticle With Pellicle on Both Sides Glass Side Pellicle Face

Glass Face

Pattern Face
Pattern Side Pellicle Face

Figure 3-4 Names of Inspection Faces

Table 3-1 Maximum Reticle Inspection Area (When PD or PPD is Used)

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MCSV-100 • Nikon Reticle Data

3.1.6 Alignment Adjustment (Reticle Parameter)

6 Alignment Adjustment Reticle Parameter

Item 6 in Figure 3-1 and 3-2; specifies correction value for reticle alignment shift
due to fabrication error of reticle alignment mark position.

◆ -99.999 ~ 99.999 [µm] (Wafer Shot Coordinate System)

Specify a value whose sign is the reverse of the fabrication error for each of
these marks: X (mean of X1 and X2), Y (Y1), and 13 (Y2). This parameter is
added to the reticle alignment results.

Table 3-2 Maximum Reticle Inspection Area (when PD5 is used)

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MCSV-100 • Nikon Reticle Data

3.1.7 Particle Detecting Sensitivity (Pattern) (Reticle Parameter)

7 Reticle Particle Detection Sensitivity (Pattern) Reticle Parameter

Item 7 in Figures 3-1 and 3-2; specifies the particle detection sensitivity of the
reticle pattern face. The specified value sets the reticle particle detection
sensitivity as the size of a B rank particle (according to the particle check
judgment level).

◆ 0.0 ~ 9.999 [µm]

Whether particles on a reticle affect exposure depends on the dimensions of the
patterns on the reticle. This parameter specifies the optimum particle detection
sensitivity for the design rule.

3.1.8 Reticle Blind (Blind Data)

8 Reticle Blind Blind Data

Item 8 in Figure 3-1; specifies the pattern exposure area on the reticle for each of
the 16 blind IDs for determining the positive and negative X, Y borders of the
inspection area.

◆ -9999999.999 ~ 99999999.999 [µm] (Wafer Shot Coordinate System)

A total of 32 reticle blind settings can be specified for all blind IDs. Patterns
outside the area specified here are masked, and will not be exposed. Reticle
blind specification is disabled, however, for blind IDs. with no reticle name
specified by Reticle Name 1.

Use the Blind ID in the wafer shot map screen to specify which shots are
exposed using which reticle blind.

When two or more reticle blind settings are specified for a blind ID, exposure is
executed for each setting. Figures 3-5 to Figure 3-8 are examples of two patterns
on a reticle exposed in one wafer shot.

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MCSV-100 • Nikon Reticle Data

Blind IDs

Figure 3-5 Reticle Data (Reticle Blind Specification)

X-" X+"
Y+"

Y+
Y-"

Y+'

Y- Y-'

X- X+ X-' X+'
Blind ID = "*" Blind = "1"

<Wafer Shot Coordinate System>

Figure 3-6 Exposure Area for Each Blind ID

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MCSV-100 • Nikon Reticle Data

Figure 3-7 Wafer Shot Map Data Screen (Blind ID)

Blind ID "*"
Numbers in shot
represent Blind ID "1"
exposure order

Figure 3-8 Exposure Shot

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MCSV-100 • Nikon Reticle Data

3.1.9 Blind Center Shift (Blind Data)

9 Blind Center Shift Blind Data

Item 9 in Figure 3-1; reticle blind area, specifies the exposure position offset on
the wafer in X and Y. (See Figure 3-9 for an example of this parameter).

◆ -9999999.999 ~ 99999999.999 [µm] (Wafer Shot Coordinate System)

Any blind ID other than “*” cannot be specified if the reticle name for the ID has
not been specified.

Refer to reticle blind drawings (Figure 3-5 to 3-8) for example specifications of
this parameter.

Reticle Shot

Reticle Blind
(Exposure Area)

Exposure Center Shift

Reticle
Pattern

Center Shift

<Reticle Coordinate System> <Wafer Shot Coordinate System>

Figure 3-9 Example of Blind Center Shift

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MCSV-100 • Nikon Reticle Data

3.2 PARAMETER SPECIFICATION

Click [Reticle] in the Section Select window. The Reticle Data Specification
window is displayed (Figure 3-10).

Reticle Name Reticle Parameter Area

List (Note)

Blind Data
Area (Note)

Figure 3-10 Reticle Data Specification Window

NOTE
When no reticle names are specified in the reticle name list, the reticle parameter
area and blind data area are not displayed.

Specify parameters according to the following procedures:

1. Specifying Reticle Name

a. To specify the reticle name in the reticle name list, click the reticle name area
of the target blind ID. The reticle is now assigned to a blind ID.
When a reticle name is specified, a reticle registration number is
automatically assigned (same registration number is assigned to reticles with
the same name), and is displayed at “Cntl” of the reticle name list. Reticle
registration numbers are displayed as R-1, R-2, and so on.

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MCSV-100 • Nikon Reticle Data

Blind ID Reticle
Registration
Number

Reticle Name
Area

Delete the reticle name in the reticle name area to cancel a reticle that is already
allocated. A window to confirm the cancellation of the assignment is displayed:

Clears reticle Cancels clearing

name allocation reticle name
allocation

Click [OK] to clear the reticle blind and blind center shift specifications of the blind
ID whose reticle name was cleared.

NOTE
If the deallocated reticle name is not specified for another blind ID, reticle
parameter area specifications corresponding to the reticle will also be cleared.

2. Specifying Reticle Parameters

a. Select the editing target reticle name from the reticle name area pull-down
list in the reticle parameter area.

NOTE
The reticle name area pull-down list only shows reticle names specified in the
reticle name list.

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MCSV-100 • Nikon Reticle Data

Reticle Parameter Area

NOTE
The reticle name area pull-down list only shows reticle names specified in the
reticle name list.

The display in the reticle parameter area changes to accommodate the

parameter content of the target reticle.
b. Specify the desired parameter inside the reticle parameter area.
c. Repeat steps “a.” to “b”, specifying parameters for all reticle used in
exposure.

3. Specifying Blind Data

a. Select the editing target ID from the pull-down list in the blind ID area.
Blind ID Area (Note) Blind Data Area

NOTE
The Blind ID Area pull-down list only displays blind IDs for which a reticle is
already allocated in the reticle name list.

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MCSV-100 • Nikon Reticle Data

The blind data specifications of the target blind ID are displayed in the blind
data area.
b. Specify the desired parameter in the blind data area.
c. Repeat steps “a.” to “b”, specifying blind data for all blind IDs used in
exposure.

4. Ending Edit of Data Section

a. When parameter specification is complete, click [OK]; click [Cancel] to
render contents of editing invalid and end editing.

Ignores editing and ends Accepts editing and

data section editing (Note) ends data section
editing

NOTE
If [Apply] was pressed during data section editing, only editing performed since
[Apply] was pressed will be ignored.

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MCSV-100 • Nikon Wafer Alignment Data

SECTION 4
WAFER ALIGNMENT DATA

Wafer alignment data is composed of information on wafer alignment, such as

wafer alignment sensors and algorithms.

This section explains the parameters for wafer alignment data and their
specification.

4 .1 DESCRIPTION OF PARAMETERS

Wafer alignment data is divided into the following blocks:

• Wafer Alignment Sensors

Sensors used for wafer alignment are specified for each alignment type.
Details are described in Wafer Alignment Sensor.
• Search Alignment Data
Parameters for sensors used in wafer search alignment are specified. Details
are described in Search Alignment Data.
• Fine Alignment Data (LSA)
Parameters for LSA sensors used in wafer fine alignment employing LSA are
specified. Details are described in Fine Alignment Data (LSA).
• Fine Alignment Data (FIA)
Parameters for FIA sensors used in wafer fine alignment employing FIA are
specified. Details are described in Fine Alignment Data (FIA).
• Fine Alignment Data (LIA)
Parameters for LIA sensors used in wafer fine alignment employing LIA are
specified. Details are described in Fine Alignment Data (LIA).
• Fine Alignment Data (TTR-LIA)
Parameters for TTR-LIA type fine alignment using LIA are specified. Details
are described in Fine Alignment Data (TTR-LIA).

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MCSV-100 • Nikon Wafer Alignment Data

4.2 WAFER ALIGNMENT SENSOR

1
2
3
4

Figure 4-1 Wafer Alignment Sensor

The following are parameters for wafer alignment sensors.

4.2.1 Search Sensor (Sensor for Sequence)

1 Search Sensor Sensor for Sequence

Item 1 of Figure 4-1; specifies sensor used for wafer search alignment.
◆ LSA
◆ FIA

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4.2.2 g-EGA Sensor (Sensor for Sequence)

2 g-EGA Sensor Sensor for Sequence

Item 2 of Figure 4-1; specifies sensor used for g-EGA.

◆ LSA
◆ FIA
◆ LIA
◆ TTR-LIA (unsupported)

NOTE
EGA by TTR-LIA (option) is not supported at present.

4.2.3 t-EGA Sensor (Sensor for Sequence)

3 t-EGA Sensor Sensor for Sequence

Item 3 of Figure 4-1; specifies sensor used for t-EGA.

◆ LSA
◆ FIA
◆ LIA
◆ TTR-LIA (unsupported)

NOTE
EGA by TTR-LIA (option) is not supported at present.

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4.2.4 D/D Sensor (Sensor for Sequence)

4 D/D Sensor Sensor for Sequence

Item 4 of Figure 4-1; specifies sensor used for D/ D alignment.

◆ LSA
◆ LIA
◆ TTR-LIA
Table 4-1 shows the available sensors for each alignment.

Table 4-1 Available Sensors

Wafer Alignment Available Sensors

Wafer Search Alignment LSA FIA
g-EGA LSA FIA LIA TTR-LIA (Note)
t-EGA LSA FIA LIA TTR-LIA (Note)
D/D Alignment LSA LIA TTR-LIA (Note)

NOTE
EGA by TTR-LIA (option) is not supported at present.

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4.3 SEARCH ALIGNMENT DATA

Different search alignment data are displayed in the search alignment data
specification window depending on the search alignment sensor specified.
(Figures 4-2 and 4-3)

Search Alignment Sensor

4 5
6 7 8
9
10
11
12
13

Figure 4-2 Search Alignment Data (When Search Alignment Sensor Is

Specified as LSA)

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Search Alignment Sensor

1
3

4 5 6 7 8
9
10
11
12
13

Figure 4-3 Search Alignment Data (When Search Alignment Sensor is

Specified as FIA)

The following are parameters for search alignment data.

4.3.1 Mark Position (Search Mark Data-ISA, FIA)

1 Mark Position Search Mark Data (LSA, FIA)

Item 1 of Figures 4-2 and 4-3; specifies the search alignment mark center
coordinates in a shot for the Wy mark (Wθ mark) and the Wx mark.

NOTE
The Wθ mark refers to the same search alignment mark as the Wy mark in the θ
s-shot.

◆ -99999.999 ~99999.999 [µm] (Wafer Shot Coordinate System)

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Figure 4-4 illustrates the mark center according to mark type,

Mark Mark
Mark Center
Center Center

Mark Center Mark Center Mark Center

<Wafer Shot Coordinate System>

Figure 4-4 Search Alignment Mark Shape

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4.3.2 FIA Mark Center Shift (Search Mark Data-FIA)

2 FIA Mark Center Shift Search Mark Data (FIA)

Item 2 in Figure 4-3; in FIA wafer search alignment, specifies for the X and Y
marks the amount of shift of the alignment mark position in the measurement
direction from the FIA visual field center.

◆ -99999.999 ~ 99999.999 [µm] (Wafer Coordinate System)

If the signal cannot be processed due to the influence of other marks when
aligning the alignment mark to the visual field center, signal processing may be
enabled by moving the mark position to the left or right.

Normally “0” is specified.

Mark center when Mark center when

center shift is "0" centershift is not "0"

Center Shift

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4.3.3 FIA Signal Form (Search Mark Data-FIA)

3 FIA Signal Form Search Mark Data (FIA)

Specifies the type of signal waveform for the FIA wafer search alignment for the
X mark and Y mark.

◆ Normal Normal Waveform

◆ Reverse Reversed Polarity Waveform
The signal form changes depending on the type of wafer process and on such
conditions as the reflecting ratio of the substrate around marks.

4.3.4 Mark Type (Search Mark Data-ISA, FIA)

4 Mark Type Search Mark Data (LSA, FIA)

Item 4 of Figures 4-2 and 4-3; specifies the number of marks used as search
alignment marks (Figure 4-4).

◆ Single 1 Line
◆ Double 2 Lines
◆ Triple 3 Lines

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4.3.5 Mark Pitch (Search Mark Data-ISA, FIA)

5 Mark Pitch Search Mark Data (LSA. FIA)

Item 5 of Figures 4-2 and 4-3; specifies the mark pitch and border width zone
according to search mark type (LSA, FIA) as in Figure 4-4.

◆ -99.999 ~ 999.999 [µm] (Wafer Shot Coordinate System)

The border width zone is the range in which other signals should not be detected,
based on the mark edge. Prohibited zone widths are as follows: a and b for
single marks, a and c for double marks, and a and d for triple marks.

4.3.6 Mark Pitch Allowance (Search Mark Data-ISA, FIA)

6 Mark Pitch Allowance Search Mark Data (LSA. FIA)

Item 6 of Figures 4-2 and 4-3; specifies the allowance for variance between the
mark pitch computed by search signal processing and the mark pitch specified in
the design.

◆ -99.999 ~ 999.999 [µm]

This value is used to give a margin to the mark pitch deviation caused by signal
distortion, which is generated by the process.

Normally “2 ~ 4” is specified.

4.3.7 Mark Width (Search Mark Data-ISA, FIA)

7 Mark Width Search Mark Data (LSA. FIA)

Item 7 of Figures 4-2 and 4-3; specifies the mark width in microns, as shown in
Figure 4-4, according to search mark type (LSA, FIA).

◆ -99.999 ~ 999.999 [µm]

Normally “4” is specified for the checkered grid mark, and “6” for the diagonal grid
mark.

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4.3.8 Mark Width Allowance (Search Mark Data-LSA, FIA)

8 Mark Width Allowance Search Mark Data (LSA. FIA)

Item 8 of Figures 4-2 and 4-3; specifies the upper limit of the distance between
peaks below which the closest two peaks in search signal data are regarded as
one mark signal.

◆ -99.999 ~ 999.999 [µm]

Even when a mark signal is distorted, the signal is regarded as one mark if the
distance between peaks is within the specified value of this parameter. Normally
"11" is specified.

4.3.9 Y-Theta Search Sequence (Search Parameter-LSA, FIA)

9 Y-Theta Search Sequence Mode Search Parameter (LSA, FIA)

Item 9 of Figures 4-2 and 4-3; specifies the process mode of wafer search
alignment.

NOTE
See 4.3.2, “Wafer Search Alignment” in “Function Description” for more
information on the processing mode.

◆ Normal Standard Processing Mode Performs search alignment using the

s-shot search alignment marks. Rotation adjustment and search
alignment mark measurement is repeated until wafer rotation is
within tolerance.
◆ Quick Processing Mode Emphasizing Throughput The s-shot search
alignment marks are used for the first measurement, but the fine
alignment marks are used for the second and subsequent
measurements after rotation adjustment. Rotation adjustment
and fine alignment mark measurement are repeated until wafer
rotation is within tolerance. The s-shot fine alignment mark
measurement results are also used in g-EGA calculations.

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4.3.10 Theta Mark Fixation (Search Parameter-ISA, FIA)

10 Theta Mark Fixation Search Parameter (LSA, FIA)

(Unused)

4.3.11 Search Mark Choice (Search Parameter-ISA, FIA)

11 Search Mark Choice Search Parameter (LSA. FIA).

Item 11 of Figures 4-2 and 4-3; when signals similar to the signal of the
alignment mark are detected in the search signal data, this parameter specifies
which signal is recognized as the alignment mark.

◆ Middle Selects the signal closest to the center of signal waveform data
(not the center of candidate signals).
◆ Forward-1 ~ Forward-9 Selects the signal of the specified number from the
beginning of the signal data. If there is no signal for the specified number, the
closest signal will be selected. Signals from “Forward? through “Forward-9”
cannot be specified from the pull-down list.
◆ Backward-1 ~ Backward-9 Selects the signal that was specified from the end
of the signal data. If there is no signal for the specified number, the closest
signal will be selected. Signals from “Backward-2” through “Backward-9
cannot be specified from the pull-down list.
◆ direct... Directly enters from “Forward-1’ to “Forward-9” and from “Backward-
1” to “Backward-9”. Can be specified by quick keys such as F6 and B3.
Normally “Middle” is specified.

Table 4-2 and Figure 4-5 show examples of the specification of this parameter
and mark selection.

Table 4-2 Example of Search Mark Choice Specification and Selection

Search Mark
Choice Middle Forward-1 Forward-2 Backward-1 Backward-2

Selected Mark A B C A B

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(C)
(B) (A)

Search Signal Data Center

Figure 4-5 Signal Waveform Example (Single Mark)

4.3.12 Search Processing Algorithm (Search Parameter-ISA, FIA)

12 Signal Processing Algorithm Search Parameter (LSA.(FIA)

Item 12 of Figures 4-2 and 4-3; specifies the algorithm for detecting the mark
position from obtained signal waveform data.

◆ 6 ~ 8, 10 ~ 11 (LSA) (Note)
◆ 40 ~ 42 (FIA)

NOTE
Algorithm 11 is not yet supported.

Specify a parameter that matches the signal strength and noise status. Tables 4-
3 and 4-4 show signal processing algorithms and the applicable signal status.

Normally “6” is specified when the search alignment sensor is set to LSA. “40” is
specified in the case of FIA.

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Table 4-3 Signal Status and Signal Processing Algorithms (LSA)

Search Signal Processing Central Level

Algorithm (Note 1) Suitable Signal Status
6 40%
7 30%
8 20% Much distortion (difficulty in
10 8% identifying mark)

Mark signal strength is extremely

weak compared to noise and
false signals (10% or less)
Combination of algorithms 6 and
11 (Note 2) – 10

NOTE 1
Center level indicates the slice level that becomes the center when specifying the
alignment marks.

NOTE 2
Algorithm 11 is not yet supported.

Table 4-4 Signal Status and Signal Processing Algorithms (FIA)

Search Signal Processing

Algorithm Suitable Signal Status
40 Normal; mark is easily identified
41 Much distortion (difficulty in identifying mark)
Mark signal strength is extremely weak compared to
42 noise and false signals (10% or less)

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4.3.13 Search Margin (Search Parameter-ISA, FIA)

13 Search Margin Search Parameter (LSA. FIA)

NOTE
The search margin applies only to normal wafer search alignment; its setting is
not used in wafer search alignment error recovery processing. For this, the
system uses the default value for machine error retries.

Item 13 of Figures 4-2 and 4-3; limits the processing range of search signal data
obtained during a search alignment. Normally used to prevent detection errors
when false signals are detected in a wide range.

◆ 0.0 ~ 99999.999 [µm]

The signal data processing area is calculated by adding one-half of the value of
this parameter to the left/ right areas of the disallowed band specified by the
search mark pitch (Figure 4-6). The machine default value becomes the
processing area if the processing area calculated here is narrower than the
default value in the machine.

When“0” is specified, the machine default value always becomes the processing
area.

Figure 4-6 Signal Processing Margin (Triple Mark)

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4.4 FINE ALIGNMENT DATA (LSA)

1 8
9
2
10
11
3 12
4 13
5 14
6 15
7

Figure 4-7 Fine Alignment Data (When Fine Alignment Sensors Are
Specified as LSA)

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The following are the parameters for fine alignment data (LSA).

4.4.1 Number of EGA Marks (LSA Mark Data)

1 Number of EGA Marks LSA Mark Data

Item 1 of Figure 4-7; specifies the number of X, Y sets for LSA alignment marks
measured in each EGA shot.

NOTE
In die-by-die alignment, the system will measure only the mark of the first set
specified by the LSA mark position, regardless of the specification of this
parameter.

◆ 0 ~ 4 [Marks]
The LSA mark position specification is valid from the first wafer only for the
portion of marks specified by this parameter. If “0” is specified, however, the
value is regarded as “1”. If it is desired to compute a shot factor by EGA
(Weighted EGA), it is necessary to specify at least three sets.

NOTE
For more information on Weighted EGA, see “Exposure by Weighted EGA and
EGA Factor” in “Function Description”.

When the multipoint EGA specification is “No,” however, the specification of this
parameter is not used. In this case, only the first mark specified by the LSA mark
position is measured.

4.4.2 Mark Position (LSA Mark Data)

2 Mark Position LSA Mark Data

Item 2 of Figure 4-7; specifies the coordinates of a shot in the fine alignment
mark center position for the X mark and Y mark.

◆ -99999.999 ~ 99999.999 [µm] (Wafer Shot Coordinate System)

The mark center is determined according to mark type as illustrated in Figures 4-
8 and 4-9. One X mark and one Y mark equal one combination; up to four XY
pairs can be specified. In EGA, the number of combinations of alignment marks
to be measured is determined by the number of multipoint EGA and LSA-EGA
marks. In die-by-die alignment, only the X-Y pair specified at the beginning of this
parameter is measured.

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X Fine Alignment Mark

Y Fine Alignment Mark

Figure 4-8 Mark Position (Single Mark)

Mark Mark
Center Center

Figure 4-9 Mark Center

4.4.3 Mark Type (LSA Mark Data)

3 Mark Type LSA Mark Data

Item 3 of Figure 4-7; specifies the number of lines of a fine alignment mark.

NOTE
One mark is called a single mark; two or more marks, a multimark.

◆ 0 ~ 7 [Count]
When search alignment marks are used as fine alignment marks, specify "0".

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4.4.4 Mark Pitch (LSA Mark Data)

4 Mark Pitch LSA Mark Data

Item 4 of Figure 4-7; specifies the intervals between lines when a mark consisting
of two or more lines is used.

◆ 0.0 ~ 99.999 [µm]

“0” is specified for a single mark.

LSA Mark Pitch

4.4.5 Scanning Times (LSA Mark Data)

5 Scanning Times LSA Mark Data

Item 5 of Figure 4-7; specifies the number of scanning times.

◆ 0, 1, 2,4, 8, 16 [Times]
However, when “0” is specified, it is treated as “1”. Alignment mark measurement
is executed only the number of scans specified by this parameter, and the mean
of these measurements is taken as the measurement result. When scanning is
executed two or more times (multi-scan), measurement is performed while
shifting position for each LSA scan step for each scan.

Normally “0” is specified.

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4.4.6 Scanning Steps (LSA Mark Data)

6 Scanning Steps LSA Mark Data

Item 6 of Figure 4-7; specifies the step width for a multi-scan (Figure 4-10).

◆ -99999.999 -999999.999 [µm] (Wafer Coordinate System)

Mark Position

Figure 4-10 Example of Fine Alignment Scanning

4.4.7 Result Allowance (LSA Mark Data)

7 Result Allowance LSA Mark Data

Item 7 of Figure 4-7; specifies the alignment result tolerance for each shot in
EGA and die-by-die alignment.

◆ 0.0 ~ 999.999 [µm]

Use this tolerance value to prevent misidentification of the alignment marks. A

fine alignment error occurs if the alignment result for each shot exceeds this
tolerance.

However, if “0” is specified, the fine alignment tolerance value (LSA) in System
Parameters is applied.

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4.4.8 Processing Algorithm (LSA Parameter)

8 Processing Algorithm LSA Parameter

Item 8 of Figure 4-7; specifies the algorithm for detecting the mark center from
signal data obtained (Figures 4-11, 4-12).
◆ 1,4 Midpoint detection method is used. “4” is only for multimarks.

NOTE
Algorithms “4” and “5” may cause errors if the mark pitch is small (15µm or less).
Use these algorithms only for 20 µm or larger pitch multimarks.

◆ 2 Steepest slope method is used.

◆ 3,5 Midpoint differential method is used. “5” is only for multimarks.

NOTE
Algorithms “4” and “5” may cause errors if the mark pitch is small (15 µm or less).
Use these algorithms only for 20 µm m or larger pitch multimarks.

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This method slices the obtained signal

Midpoint Detection
waveform according to the level specified by
Method (1,4) LSA algorithm slice level, and uses its
midpoint as the mark center. “4” is only for
s1 s2 multi-marks. After synthesizing signal data of
each mark, algorithm “1” is executed.

This method slices the obtained signal

waveform at the point where the inclination
Steepest Slope Method (2)

s1 between the left and right is the steepest in the

area below the level specified by LSA
algorithm slice level. This is the final slice
s2 level, and its midpoint is used as the mark
center.

This method slices the obtained signal

Midpoint Differential Method (3,5)

waveform according to the LSA algorithm

p slice level to determine the center position
reference coordinate values). 1 t then slices
this signal data into many levels, computing
the midpoint at each level, and finds an
equivalent, stable slice level across the area in
which the left and ri ht slopes of the
s1 waveform are the longest. The final slice
level is where the midpoint is near the
s2 reference and is most stable. The midpoint of
this level Is used as the mark center. “5” is
only for multimarks. After synthesizing
signal data of each mark, algorithm “3” is
b executed.

Figure 4-11 LSA Signal Processing Algorithms

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Figure 4-12 Signal Data Types and Appropriate Signal Processing

Algorithms

4.4.9 Algorithm Slice Level (LSA Parameter)

9 Algorithm Slice Level LSA Parameter

Item 9 of Figure 4-7; specifies the level to slice the obtained signal waveform,
with the bottom of the waveform 0% and the peak 100%.

◆ 0 ~ 100 [%]
The method of use and standard specification value of this parameter differ
depending on the specification of the signal processing algorithm (LSA
Parameter). (Table 4-5)

Table 4-5 Definition of Algorithm Slice Level

LSA Signal Processing

Algorithm Standard Specification Value
Approximately 50% for positive marks, and 20 to 30%
1, 4 for negative marks
2 60 ~ 80%
3, 5 20%

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4.4.10 Processing Gate Width A, B (LSA Parameter)

10 Processing Gate Width A. LSA Parameter

Item 10 of Figure 4-7; specifies input signal data and the signal processing
range, A and B.

◆ -9999.999 ~ 9999.999 [µm]

The definition and standard specification value of this parameter differs
depending on the specification of the signal processing algorithm (LSA
Parameter). (Table 4-6)

Table 4-6 Definition and Standard Specification of Processing Gates A

and B

18.75%

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4.4.11 Multimark Error Mode (LSA Parameter)

11 Multimark Error Mode LSA Parameter

Item 11 of Figure 4-7; specifies the method of judging whether to generate an

alignment error when multiple lines of a multimark cause a measurement error.

◆ 0 If the error is within the error allowance listed in Table 4-7, it is not
processed as an error. The mark position is calculated using marks the
system was able to detect. (Table 4-7)
◆ 1 If lines at both ends can be detected normally (based on the error
allowance listed in Table 4-7), it is not processed as an error. Calculation is
performed using the lines at both ends and remaining lines detected.
◆ 2 If all the lines are not detected, a fine alignment error is generated.

Table 4-7 Multimark Error Allowance Upon Measurement

Number of Lines 1 2 3 4 5 6 7

Error Allowance 0 1 2 2 3 3 4

4.4.12 Both Ends of Multimark (LSA Parameter)

12 Both Ends of Multimark LSA Parameter

Item 12 of Figure 4-7; specifies whether mark signals at both ends of a multimark
are used for mark position calculation.

◆ Excluded Do not use both ends of multimark. All lines (N) of the multimark
are used in mark position calculation, except those at both ends (N -2).

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◆ Included Uses all lines of the multimark including both ends.

However, in alignment mark detection, all N lines of the multimark are used,
regardless of the specification of this parameter.

4.4.13 EGA Reject (LSA Parameter)

13 EGA Reject Mode LSA Parameter

Item 13 of Figure 4-7; specifies whether an EGA reject is performed.

NOTE
For more information on the EGA reject function and abnormal value judgment
method, see “EGA Reject” in “Function Description”.

◆ Yes Performs EGA reject.

◆ No Does not perform EGA reject.
EGA reject is a function that removes what the system judges to be abnormal
values, from the alignment result of each EGA shot used in EGA computations.
When an aberrant is included in the alignment result, the software removes the
data of that shot, then reperforms EGA calculations.

Judgment on whether a value is anomalous is based on the LSA-EGA reject

tolerance.

When this causes the number of EGA shots that can be used in EGA
computations to fall below the number of LSA-EGA requisite shots, an EGA shot
count error occurs.

4.4.14 EGA Reject Limit (LSA Parameter)

14 EGA Reject Limit LSA Parameter

Item 14 of Figure 4-7; specifies by absolute value the tolerance for judgment on
anomalous values in the EGA alignment result.

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◆ .0 ~ 9999.999 [µm]
When “0” is specified, however, EGA reject 13 is not performed, even if “Yes” is
specified for the LSA-EGA reject mode.

4.4.15 EGA Requisite Shots (LSA Parameter)

15 EGA Requisite Shots LSA Parameter

NOTE
When the number of EGA shots specified by the wafer shot map alignment data
is less than the number specified by this parameter, an error is generated upon
execution of the process program data check.

Item 15 of Figure 4-7; specifies minimum number of shots that succeeded in

measurement necessary for computation upon EGA execution.

NOTE
When either the number of shots that succeeded in X-mark measurement or the
number of shots that succeeded in Y-mark measurement is equal to or greater
than the specification of this parameter, the requirement for the number of LSA-
EGA requisite shots has been satisfied.

◆ 2 ~ 63 [Shots]
When the number of shots capable of being used in EGA computation is less
than the specification for this parameter, the system generates an EGA shot
count error. This prevents a decline in EGA alignment accuracy.

Specification values smaller than 2 are automatically regarded as 2.

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4.5 FINE ALIGNMENT DATA (FIA)

1 8
9
2 10
11
12
3 13
4 14
15
5 16
6
7

Figure 4-13 Fine Alignment Data (For FIA)

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The following are parameters for fine alignment data (FIA).

4.5.1 Number of EGA Marks (FIA Mark Data)

1 Number of EGA Marks FIA Mark Data

Item 1 of Figure 4-7; specifies the number of X, Y sets for FIA alignment marks
measured in each EGA shot.

◆ 0 ~ 4 [Marks]
The FIA mark position specification is valid from the first wafer only for the
portion of marks specified by this parameter. If “0” is specified, however, the
value is regarded as “1”. If it is desired to compute a shot factor by EGA
(Weighted EGA), it is necessary to specify at least three sets.

NOTE
For more information on Weighted EGA, see “Exposure by Weighted EGA and
EGA Factor” in “Function Description”.

When the multipoint EGA specification is “No,” however, the specification of this
parameter is not used. In this case, only the first mark specified by the FIA mark
position is measured.

4.5.2 Mark Position (FIA Mark Data)

2 Mark Position FIA Mark Data

Item 2 of Figure 4-13; specifies the coordinates of a shot in the fine alignment
mark center position for the X mark and Y mark,

◆ -99999.999 ~ 99999.999 [µm] (Wafer Shot Coordinate System)

The mark center is determined according to mark type as illustrated in Figures 4-
14 and 4-15. One X mark and one Y mark equal one combination: up to four XY
combinations can be specified. The number of combinations of alignment marks
to be measured is determined by the number of multipoint EGA and LSA-EGA
marks.

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X Fine Alignment Mark

Y Fine Alignment Mark

Figure 4-14 Mark Position

Mark Mark
Center Center

Figure 4-15 Mark Center

4.5.3 Mark Type (FIA Mark Data)

3 Mark Type FIA Mark Data

NOTE
An LSA mark or LIA mark can be used for FIA

Item 3 of Figure 4-13; specifies the number of lines of a fine alignment mark.

◆ 0 ~ 32767 [Lines]

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4.5.4 Mark Pitch (FIA Mark Data)

4 Mark Pitch FIA Mark Data

Item 4 of Figure 4-13; specifies the pitch between marks.

◆ 0.0 ~ 99.999 [µm]

When mark type (FIA Mark Data) is set to “1”, the value specified is twice the
mark width.

4.5.5 Mark Center Shift (FIA Mark Data)

5 Mark Center Shift FIA Mark Data

Item 5 of Figure 4-13; specifies the shift in the measurement direction of the
alignment mark position from the center of the FIA index for the X mark and the Y
mark.

◆ -9999.999 ~ 9999.999 [µm] (Wafer Coordinate System)

If the signal cannot be processed because of the influence of other marks when
aligning the alignment mark to the visual field center, signal processing may be
enabled by moving the mark position to the left or right.

Normally “0” is specified.

Mark center when Mark center when

center shift is "0" center shift is not "0"

Center Shift

4.5.6 Signal Profile (FIA Mark Data)

6 Signal Profile FIA Mark Data

Item 6 of Figure 4-13; specifies the type of mark signal. (See Figure below.)

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◆ Single
◆ Double

4.5.7 Result Allowance (FIA Mark Data)

7 FIA Alignment Result Allowance FIA Mark Data

Item 7 of Figure 4-13; specifies the alignment result tolerance for each shot in
EGA.

◆ 0.0 ~ 999.999 [µm]

Use this tolerance value to prevent misidentification of the alignment marks. A
fine alignment error occurs if the alignment result for each shot exceeds this
tolerance.

However, if “0” is specified, the fine alignment tolerance value (FIA) is applied.

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4.5.8 Processing Algorithm (FIA Parameter)

8 Signal Processing Algorithm FIA Parameter

Item 8 of Figure 4-13; specifies an algorithm for detecting the mark center from
signal data obtained.

◆ 41 Midpoint detection method is used. The mark center is determined from

the intersections between the level specified by the FIA algorithm slice
level and the edges of the signal waveform.

4.5.9 Algorithm Slice Level (FIA Parameter)

9 Algorithm Slice Level FIA Parameter

Item 9 of Figure 4-13; specifies the level to slice the obtained signal waveform,
with the bottom of the waveform 0% and peak 100%.

◆ 0-100 [ % ]
See the explanation of the FIA signal processing algorithm for the method of use
for this parameter.

Normally “50” is specified.

4.5.10 Processing Gate Width B (FIA Parameter)

10 Processing Gate Width FIA Parameter

Item 10 of Figure 4-13; specifies the processing range of obtained signal data.

◆ -9999.999 ~ 9999.999 [µm]

Normally the processing range is specified using the following formula.

(Processing Gate B) = (Overall Mark Width) + 10 µm

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Mark Center

Processing
Gate B

4.5.11 Edge Mode (FIA Parameter)

11 Edge Mode FIA Parameter

Item 11 of Figure 4-13; when signal profile (FIA Mark Data) is specified as
“Double,” this parameter specifies which edge, inner or outer, to use to calculate
the mark center.

◆ Out Outer edge signal is used

◆ In Inner edge signal is used
◆ Both Both inner and outer edge signals are used.

Mark

Outer Edges

Signal

FIA Algorithm Slice Level

Inner Edges

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4.5.12 Contrast Limit (FIA Parameter)

12 Contrast Limit FIA Parameter

Item 12 of Figure 4-13; specifies the lower limit of contrast required to recognize
signals as marks.

◆ 0 ~ 100 [%]
The maximum and minimum values of signals in FIA processing gate B (FIA
Parameter) are 100% and 0% respectively.

Only signals that have a contrast higher than the specification of this parameter
are recognized as marks.

Normally “25” is specified. When it is possible to recognize false signals as

marks, set the value higher than 25.

4.5.13 Number of Line Averaging (FIA Parameter)

13 Number of Line Averaging FIA Parameter

Item 13 of Figure 4-13; of obtained image signal data, this parameter specifies
the number of scanning lines used for processing.

◆ 0 ~ 64 [Lines]
The data for the number of scanning lines specified by this parameter are
averaged. They become the data used in signal processing.

Normally specified as 56.

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4.5.14 EGA Reject (FIA Parameter)

14 EGA Reject FIA Parameter

Item 14 of Figure 4-13; specifies whether EGA reject is performed.

NOTE
For more information on the EGA reject function and abnormal value judgment
method, see “EGA Reject” in “Function Description”.

◆ Yes Performs EGA reject.

◆ No Does not perform EGA reject.
EGA reject is a function that removes what the system judges to be abnormal
values, from the alignment result of each EGA shot used in EGA computations.
When an abnormal value is included in the alignment result, the software
removes the data of that shot, then reperforms EGA calculations.

Judgment on whether a value is an anomalous value is based on the FIA-EGA

reject tolerance.

When this causes the number of EGA shots that can be used in EGA
computations to fall below the number of FIA-EGA requisite shots, an EGA shot
count error occurs.

4.5.15 EGA Reject Limit (FIA Parameter)

15 EGA Reject Limit FIA Parameter

Item 15 of Figure 4-13; specifies by an absolute value the tolerance for judgment
on anomalous values in the EGA alignment result.

◆ 0.0 ~ 9999.999 [µm]

When “0” is specified, however, EGA reject is not performed, even if “Yes” is
specified for the FIA-EGA reject mode.

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4.5.16 EGA Requisite Shots (FIA Parameter)

16 EGA Requisite Shots FIA Parameter

NOTE
When the number of EGA shots specified by the wafer shot map data alignment
ID is less than the number specified by this parameter, an error is generated
upon execution of the process program data check.

Item 16 of Figure 4-13; specifies minimum number of successful shots necessary

for computation upon EGA execution.

NOTE
When both the number of successful x-mark shots and the number of successful
y-mark shots are equal to or greater than this parameter, the system judges that
requirements for the number of FIA-EGA requisite shots has been satisfied, The
number of shots that succeeded in X-mark and Y-mark measurement does not
have to agree with the specification of this parameter.

◆ 2 ~ 63 [Shots]
When the number of usable EGA shots is less than the specification of this
parameter, the system generates an EGA shot count error. This prevents a loss
of EGA alignment accuracy caused by a reduction in the number of shots
necessary for fine alignment.

Specification values smaller than 2 are automatically regarded as 2.

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4.6 FINE ALIGNMENT DATA (LIA)

1 4
5
2 6
7
8
3 9

Figure 4-16 Fine Alignment Data (For LIA)

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The following are parameters for fine alignment data (LIA)

4.6.1 Number of EGA Marks (LIA Mark Data)

1 Number of EGA Marks LIA Mark Data

Item 1 of Figure 4-16; specifies the number of X, Y sets for LIA alignment marks
measured in each EGA shot.

NOTE
In die-by-die alignment, the system will measure only the mark of the set first
specified by the LIA mark position, regardless of the specification of this
parameter.

◆ 0 ~ 4 [Marks]
The LIA mark position specification is valid from the first wafer only for the
number of marks specified by this parameter. If “0” is specified, however, the
value is regarded as “1”. If it is desired to compute a shot factor for Weighted
EGA, it is necessary to specify at least three sets.

NOTE
For more information on Weighted EGA, see “Exposure by Weighted EGA and
EGA Factor” in “Function Description”.

When the multipoint EGA specification is “No,” however, this parameter is not
used. In this case, only the first mark specified by the LIA mark position is
measured.

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4.6.2 Mark Position (LIA Mark Data)

2 Mark Position LIA Mark Data

Item 2 of Figure 4-16; specifies the coordinates of the center of a fine alignment
mark.

◆ -99999.999 ~ 99999.999 [µm] (Wafer Shot Coordinate System)

The mark center is the center of the row of marks with constant pitch. One X
mark and one Y mark equal one x-y pair. In EGA, the number of pairs to be
measured is determined by the number of multipoint EGA and LIA-EGA marks.
In die-by-die alignment, only the first x-y pair specified is measured.

4.6.3 Result Allowance (LIA Mark Data)

3 Result Allowance LIA Mark Data

Item 2 of Figure 4-16; specifies for each shot the tolerance value for the
alignment result in EGA and die-by-die alignment.

◆ 0.0 ~ 999.999 [µm]

Use this tolerance value to prevent misidentification of the alignment marks. If the
mark position shift exceeds this tolerance, it is handled in the same way as a fine
alignment error.

If “0” is specified, the fine alignment tolerance value (LIA) from “System
Parameters” is applied.

4.6.4 Processing Algorithm (LIA Parameter)

4 Signal Processing Algorithm LIA Parameter

Item 4 of Figure 4-16; specifies the algorithm for detecting the mark center from
the input signal waveform.

◆ 30 ± first-order diffracted light is used. Normally this is specified.

◆ 32 0-order and +2nd-and 0-and -2nd-order diffracted beams are used when
sufficient signal strength cannot be obtained, using ±1st order light.

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4.6.5 Averaging Times (LIA Parameter)

5 Averaging Times LIA Parameter

Item 5 of Figure 4-16. (Unused)

4.6.6 Measurement Time Interval (LIA Parameter)

6 Measurement Time Interval LIA Parameter

Item 6 of Figure 4-16. (Unused)

4.6.7 EGA Reject (LIA Parameter)

7 EGA Reject LIA Parameter

Item 7 of Figure 4-16; specifies whether EGA reject is performed.

NOTE
For more information on the EGA reject function and abnormal value judgment
method, see EGA Reject in Function Description.

◆ Yes Performs EGA reject

◆ No Does not perform EGA reject
EGA reject is a function that removes what the system judges to be abnormal
values, from the alignment result of each EGA shot used in EGA computations.
When an anomaly is detected in the measurement data, the software removes
the data of that shot, then recalculates EGA.

Judgment on whether a value is abnormal is based on the LIA-EGA reject

tolerance.

When this causes the number of usable EGA shots to fall below the minimum
number of LIA-EGA shots, an EGA shot count error occurs.

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4.6.8 EGA Reject Limit (LIA Parameter)

8 EGA Reject Limit LIA Parameter

Item 8 of Figure 4-16; specifies the tolerance for exclusion of anomalous

judgment EGA measurements.

◆ 0.0 -9999.999 [µm]

If “0” is specified, EGA reject is not performed, even if “Yes” is specified for LIA-
EGA reject.

4.6.9 EGA Requisite Shots (LIA Parameter)

9 EGA Requisite Shots LIA Parameter

NOTE
When the number of EGA shots specified in wafer shot map data is less than this
parameter, an error is generated upon execution of the process program data
check.

Item 9 of Figure 4-16; specifies minimum number of shots, that succeeded in

measurement, necessary for computation upon EGA execution.

NOTE
When either of the number of successful x measurement shots and y
measurement shots is equal to or greater than this parameter, the system judges
that the number of LIA-EGA requisite shots has been satisfied. The number of
shots that succeeded in X-mark and Y-mark measurement does not have to
agree with the specification of this parameter.

◆ 2 ~ 63 [Shots]
When the number of usable EGA shots is less than the specification, the system
generates an EGA shot count error. This prevents a deterioration in EGA
alignment accuracy.

Specification values smaller than 2 are automatically regarded as 2.

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4.7 FINE ALIGNMENT DATA (TTR-LIA)

3
4
5
1 6

Figure 4-17 Fine Alignment Data (For TTR-LIA)

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The following are parameters for fine alignment data (TTR-LIA)

NOTE
TTR-LIA is an option. EGA via TTR-LIA is currently unsupported.

4.7.1 Mark Position (TTR-LIA Mark Data)

1 Mark Position TTR-LIA Mark Data

Item 1 of Figure 4-17; separately specifies the center coordinates of the intrashot
fine alignment mark for the X1, X2 and Y1, Y2 marks.

◆ -99999.999 ~ 99999.999 [µm] (Wafer Shot Coordinate System)

4.7.2 Result Allowance (TTR-LIA Mark Data)

2 Result Allowance TTR-LIA Mark Data

Item 2 of Figure 4-17. (Unused)

4.7.3 Processing Algorithm (TTR-LIA Parameter)

3 Processing Algorithm TTR-LIA Parameter

Item 3 of Figure 4-17; specifies the algorithm for detecting the mark center from
signal data obtained by fine alignment.

◆ TTRLIA-1

4.7.4 EGA Reject (TTR-LIA Parameter)

4 EGA Reject TTR-LIA Parameter

Item 4 of Figure 4-17. (Unused)

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4.7.5 EGA Reject Limit (TTR-LIA Parameter)

5 EGA Reject Limit TTR-LIA Parameter

Item 5 of Figure 4-17. (Unused)

4.7.6 EGA Requisite Shots (TTR-LIA Parameter)

6 EGA Requisite Shots TTR-LIA Parameter

Item 6 of Figure 4-17. (Unused)

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4.8 PARAMETER SPECIFICATION

4.8.1 Operation Procedure

Click [Align] in the Process Program Menu. The Wafer Alignment Data
Specification window is displayed (Figure 4-18).

Sensor Edit Target

Specification Selection
Area Area

Alignment Data
Edit Area

Figure 4-18 Wafer Alignment Data Specification Window

Specify parameters using the following procedure:

1. Specifying Wafer Alignment Sensor

a. Set the pointer to the sensor specification area, and click the mouse.
Select the target sensor from the displayed option menu.
Specify the sensor for each type of alignment.
Available sensors differ depending on the type of alignment.

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Wafer Search Alignment (LSA, FIA)

g-EGA (LSA, FIA, LIA, TTR-LIA (Note))
t-EGA (LSA, FIA, LIA, TTR-LIA (Note))
Die-by-die Alignment (LSA, LIA, TTR-LIA)

NOTE
TTR-LIA is an option. EGA via TTR-LIA is currently unsupported.

2. Specifying Alignment Data

a. Select the alignment sensor to edit.

Edit Target
Selection
Area

Parameters to edit are displayed in the alignment data edit area.

• When “Search” is selected: Search alignment data editing is enabled.

The contents of the editing area vary with the search alignment sensor
specification.
• When “LSA,” “FIA,” “LIA,” or “TTR-LIA” is selected: Fine alignment data
editing is enabled for the alignment sensor selected. Note that data specified
here is used commonly for g-EGA, t-EGA, and die-by-die alignment.
b. Specify the desired parameter.
c. Repeat steps “a” and “b” until the specification for alignment sensors to be

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used is complete.

3. Ending Edit
a. When parameter specification is complete, click one of the following

buttons.

Cancels edited data and Accepts edited data and

ends data section ends data section
editing (Note) editing

NOTE
When [Apply] was clicked during data section editing, the data is saved up to that
point.

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SECTION 5
WAFER SHOT MAP DATA

Wafer shot map data determines attributes of shots on the wafer.

This section describes the content of the parameters for wafer shot map data,
and their specification method.

5.1 DESCRIPTION OF PARAMETERS

The Wafer Shot Map Data specification window is comprised of the following five
areas:

• Shot Map Area -Shows shot selection and attributes.

• Mode Selection Area -Selects mode to be edited.
• Shot ID Specification Area -Selects the attributes in specified mode.
• Operation Area - Specifies whether to change currently selected shot to
specified ID or to cancel.
• Shot Selection Area -Selects a group of shots whose ID will be edited.

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Shot Map Area

Mode
Selection

Shot ID
Specification
Area

Operation
Area

Shot
Selection
Area

Figure 5-1 Wafer Shot Map Data

The following are parameters for wafer shot map data.

NOTE
The wafer shot map data initial value is set automatically on the basis of the
wafer basic data. Changing even one of the following five parameters of the
wafer basic data will initialize the wafer shot map, necessitating its re-editing:

Five Parameters:
• Wafer Shape
• Wafer Size
• Step Pitch
• Map Layout
• Map Offset

• Exposure ID
• Alignment ID
• Offset ID
• Blind ID

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5.2 EXPOSURE ID

Figure 5-2 Wafer Shot Map Data (During Exposure ID Editing)

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5.2.1 Exposure ID

1 Exposure ID

Exposure ID specifies the exposure shot. Exposure ID is automatically initialized

if wafer basic data specification is newly created, or when the wafer basic data is
modified. Specifications of the exposure ID set here can be re-entered in the
wafer shot map.

There are three types of exposure ID types, their meanings are explained below.

◆ * A shot that is exposed after auto focus. This is called a focus shot.

NOTE
The decision on whether auto focus is possible occurs just before exposure.
Taken into consideration is focus shot judgment mode and alignment results.

During wafer shot map setup, a shot whose center is within the focus area is
set as a focus shot.
◆ + A shot that is exposed without focusing. These are called fixed focus
shots since the focusing results of the previous shot are used unchanged.
When the wafer shot map is set, a shot whose center is not within the focus
area is set as a fixed focus shot.
◆ . A nonexposure shot. During initialization of the wafer shot map, a shot
whose center is entirely outside the exposure area is set as a nonexposure
shot.
A shot whose center is within the focus area can be specified as either “ * ” , “+”,
or “ . ” . A shot whose center is not within the focus area but which is partially
located within the exposure area can be specified as either “+” or “.”. However,
shots that are outside the exposure area can only be specified as “.”.

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5.3 ALIGNMENT ID

Figure 5-3 Wafer Shot Map Data (During Alignment ID Editing)

5.3.1 Alignment ID

2 Alignment ID

Specifies the alignment shot.

There are four types of alignment IDs:

◆ s Specifies the shot (s-shot) used for wafer search alignment.

◆ g Specifies the shot (g-shot) used for g-EGA.
◆ t Specifies the shot (t-shot) used for t-EGA.
◆ d Specifies the shot (d-shot) used for die-by-die alignment.

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Multiple alignment I Ds can be specified for a single shot. Shots with no

alignment targets on the wafer, however, cannot be specified for
alignment shots. Wafer alignment for each ID is described below.

s-shot (Shot for Wafer Search Alignment)

When wafer alignment method is specified as “Search”, “EGA”, or “D/D,” this

parameter must be specified.

The s-shot can be specified for two or more shots. In this case, the shots are set
so that there is at least one row where two or more shots are specified as shown
in the shaded area in Figure 5-4. If it is specified for three or more shots, two
optimum shots are automatically selected when executing a wafer search
alignment.

An s-shot can be automatically set. For details on automatic setting, see “Setting
Alignment Shot Automatically”.

Rotation Center

3 mm

Figure 5-4 s-shot Specification Area (Search Alignment Sensor = LSA,

FIA)

g-shot (Shot for g-EGA)

When wafer alignment method is specified as “EGA” or “D/ D”, this parameter
must be specified. The g-shot can be specified for 2 to 63 shots. If the specified
number of shots is less than EGA requisite shots, however, an error occurs. If the
shot specification exceeds 63, the excess shots are automatically removed. The
appropriate arrangement of g-shots is at the vertices of a regular polygon on a
wafer, preferably a large polygon.

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A g-shot can be set automatically. ‘For details on automatic setting, see “Setting
Alignment Shot Automatically”.

t-shot (shot for t-EGA) .

This must be specified if the wafer alignment method specification is “EGA” or “D/
D”, or if the EGA path is specified as “Both”.

A t-shot can be specified for 2 to 63 shots. If the specified number of shots is less
than EGA requisite shots, however, an error occurs. If the shot specification
exceeds 63, the excess shots are automatically removed.

The appropriate arrangement of t-shots is at the vertices of a regular polygon on

a wafer, preferably a large polygon.

The t-shots can be set automatically. For details, see “Setting Alignment Shot
Automatically”.

d-shot (Shot for D/ D alignment)

When wafer alignment method is specified as “D/ D”, this parameter must be
specified.

In exposure by die-by-die (D/ D) alignment, exposure takes place by performing

die-by-die alignment via shots specified by d-shot. For shots not specified by d-
shot, exposure is performed using EGA results.

The d-shots can be set automatically. For details on automatic setting, see
“Setting Alignment Shot Automatically”.

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5.4 OFFSET ID

Figure 5-5 Wafer Shot Map Data (During Offset ID Editing)

5.4.1 Offset ID

3 Offset ID

Specifies the shot that adds offset to exposure position and alignment position.

There are 16 offset ID s

◆ *, A, B, C, D, E, F, G, H, I, J, K, L, M, N, O
If the shot ID is “*” at any location, no offset is added.

Shot position offset values that correspond to offset IDs “A” to “O” have shot
offsets specified in Section 2-Wafer Basic Data.

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See the explanation of shot offset for information on changing the shot exposure
position by combining shot offset and offset ID specifications.

5.5 BLIND ID

Figure 5-6 Wafer Shot Map Data (During Blind ID Editing)

5.5.1 Blind ID

4 Blind ID

Specifies the reticle blind used for each shot.

There are 16 types of blind IDs.

◆ *, 1,2,3,4,5,6,7,8,9,10,11,12,13,14,15
The reticle blind settings and reticle blind shift that corresponds to each blind ID
are specified by reticle blind and blind center shift. See “Reticle Blind/ Reticle
Blind (Blind Data)” and “Blind Center Shift/ Blind Center Shift (Blind Data)” earlier
in this manual.

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See the explanation of the reticle blind parameter for information on the
relationship between combinations of reticle blind, blind center offset, and blind
ID specifications and the exposure shot.

5.6 PARAMETER SPECIFICATION

Click [Shot Map] in the Section Select window. The Wafer Shot Map Data
Specification window is displayed.

Shot Map Area

Mode
Selection
Area

Shot ID
Specification
Area

Operation
Area

Shot
Selection
Area

Figure 5-7 Wafer Shot Map Data Specification Window

The following are wafer shot map data editing operations:

• Viewing Shot Map

• Wafer Shot Map Data Editing
• Automatically Setting Alignment Shot
• Moving Edit Area
• Checking Shot Offset Specification

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5.6.1 Viewing Shot Map

The status of each shot on the shot map is indicated by the absence or presence
of a frame around the shot. Absence/ presence of a frame indicates whether a
shot can be exposed, and the color of the frame indicates whether it can be
focused.

+ * * Shots That Can Be Exposed

Shots with frames can be
exposed.
The color of the frame indicates
whether the shot can be focused.

• + Can Focus

Cannot Focus

Shots That Cannot Be Exposed

Shots without frames cannot be
exposed.

ID Display
• Blue indicates shot with "*" or "+" exposure ID
• Red indicates shot with "." exposure ID

5.6.2 Wafer Shot Map Data Editing

Wafer shot map data editing consists of specifying exposure ID, alignment ID,
offset ID, and blind ID.

This edit operation is used to specify a shot ID for a shot on the shot map or
cancel a specification.

Use the mouse for this edit operation.

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1. Click the appropriate mode in the mode select area.

Mode Selection Area

Exposure Shot Edit Mode

Alignment Shot Edit Mode
Offset Shot Edit Mode
Blind Shot Edit Mode

The shot ID displayed on the shot map changes depending upon the edit mode
selected. Shot ID buttons that correspond to the edit mode are displayed in the
shot ID specification area. The Shot ID Buttons are explained in Table 5-1.

Shot ID Specification Area

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Table 5-1 Correspondence Between Edit Mode and Shot ID

Shot Edit Mode Shot ID Description

Exposure shot in which focusing is
Exposure Shot * executed.
Edit Mode + Exposure shot in which focus is fixed.
(Exposure) • Shot in which exposure is not executed.
Alignment Shot * Shot in which alignment is not executed.
Edit Mode s Search alignment shot (s-shot).
(Alignment) g g-EGA shot (g-shot).
t t-EGA shot (t-shot).
d D/D alignment shot (d-shot).
Offset Shot Edit Mode Shot in which exposure is executed with
(Offset) * shot offset "0".

A, B, C, D, E, F, G, H, I, J, KShot in which exposure is executed with

L, M, N, O shot offset specified by A ~ O of shot offse
Shot in which exposure is executed with
Blind Shot Edit Mode *, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10shot offset specified by reticle blind and
(Blind) 11, 12, 13, 14, 15 blind center shift 1 ~ 15 and *.
2. Set the pointer to the target button of the ID to be specified (or canceled) in
the shot ID specification area, and click. The selected button is displayed in
pink.
3. Select the shot to be specified (or canceled) for the ID selected in “2.” using
one of the methods outlined below. The shot selected is displayed in pink on
the shot map. Five types of selection methods are available:
• Selecting 1 Shot Set the pointer to the shot to be selected in the shot map
and click. The shot clicked is selected as the edit target. If the pointer is set
to the same shot and the button is clicked again, the selection is canceled.
• Selecting by Area Holding down the mouse button, drag the mouse pointer
diagonally over the shot map so as to surround the area to be selected. All
shots surrounded by the rectangle become the edit target.

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• Selecting All Shots

Click [All] in the shot select area.
All shots become the edit target.

• Selecting by ID
Click [ID] in the shot select
Shots with the attributes of the shot ID selected in step 2 become the edit
target.

• Selection Clear Click [Clear] in the shot selection area. This clears all shots
selected for editing.

All methods can be used in combination. For example, shots can be selected by
area, then additional shots can be added.

4. Click [Set] in the operation area.

Sets alignment shot

automatically (Note)
Specifies ID for edit Cancels ID specified
target shot for edit target shot

NOTE
[Auto.] is displayed only when edit mode is “Alignment”.

The shot ID is now specified for the shot selected in step “3”. To cancel the ID
specified for this shot, set the pointer to [Reset], and click.

5. Edit the shot map by repeating steps “1” to “4”.

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6. When a shot editing is complete, click one of the following buttons

Ignores editing and ends data Renders editing valid and ends data
section editing (Note) section editing

NOTE
If [Apply] was pressed during data section editing, all edits up to that point are
valid. Editing performed after [Apply] was pressed is ignored if cancel was
chosen.

5.6.3 Setting Alignment Shot Automatically

All alignment shots can be set automatically.

The procedures for each type will be covered in the following subsections:

• Automatically Setting Search Alignment Shot

• Automatically Setting EGA Shot
• Automatically Setting Die-by-Die Alignment Shot
1. Automatically Setting Search Alignment Shot -
This procedure sets the s-shot automatically.
Search alignment shots (s-shots) are set automatically according to the
setting standard shown in Table 5-2.
If search alignment shots are set automatically, previously specified search
alignment shots are canceled.

Table 5-2 Automatic Setting Standard of s-shots

s-shot Automatic Setting Standard

Sets shots approxiately -31.75 mm away from wafer center in X
Wy direction.

Sets shots in same row as Wy mark, and just inside the outermos
Wθ focus shot.

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The procedure is as follows:

a. Click [Alignment] in the mode select area. Edit mode becomes alignment
shot edit mode.

Alignment Shot Edit Mode

b. Click [s] in the shot ID specification area. The ID button selected is displayed
in pink.

c. Click [Auto.] in the operation area.

Starts automatic setting

Search alignment shots are set automatically according to the automatic

setting standard, and the specification result is displayed on the shot map.
When setting is completed, the following window is displayed.

d. Click [OK].

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2. Automatically Setting EGA Shot -

This procedure sets g and t-shots automatically
The ideal arrangement of EGA shots is at the vertices of a regular polygon at
the outermost edges of an EGA shot (g-shot or t-shot). Thus, when an EGA
shot is set automatically, the system calculates a polygon that is as large as
possible, and has exactly the same number of vertices as the specified
shots, and sets shots closest to the vertices as EGA shots.
If an EGA shot is set automatically, previously specified EGA shots of the
same type are canceled.
The procedure for automatic setting of EGA shots is as follows:

a. Click [Alignment] in the mode select area. Edit mode becomes alignment
shot edit mode.

Alignment Shot Edit Mode

b. Click [g] or [t] in the shot ID specification area. The selected ID button is
displayed in pink.

c. Click [Auto.] in the operation area.

Starts automatic setting

The EGA shot number specification window is displayed (Figure 5-8).

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d. Specify an EGA shot count between 2 to 63.

Defines number Cancels automatic

of shots setting

Figure 5-8 EGA Shot Number Specification Window

e. Click [OK] in the EGA shot number specification window. From the specified
number of shots, EGA shots with conditions close to the ideal are set
automatically. The setting result is displayed in the shot map.
When setting is completed, the following window is displayed.

When EGA settings for When EGA settings for some of the
all specified shots are set. specified shots are set.

f. Click [OK].

3. Automatically Setting D/ D Alignment Shot-

This procedure sets the d-shot automatically
Auto-focus shots and fixed-focus shots, and all shots where alignment marks
in the exposure enable area, are set automatically as D/ D alignment shots
(d-shot).

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The procedure for automatically setting die-by-die alignment shots is as follows:

a. Click [Alignment] in the mode select area. Edit mode becomes alignment
shot edit mode.

Alignment Shot Edit Mode

b. Click [d] in the shot ID specification area. The ID button selected is displayed
in pink.

c. Click [Auto.] in the operation area.

Starts automatic setting

Die-by-die alignment shots are set automatically according to the automatic

setting standard. The specification result is displayed in the shot map.
When setting is complete, the following window is displayed.

d. Click [OK].

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5.6.4 Moving the Edit Area

This procedure adjusts the screen to display parts of the shot map area that are
outside the window.

If the scroll bar slider on the edge of the shot map area is displayed in diminished
size, only a part of the shot map appears in the window. The rest of the shot map
can be handled using the following procedure:

1. Set the pointer to the slider of the scroll bar, and slide it.
The display area scrolls.

Slider

Scroll bars

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5.6.5 Checking Shot Offset Specification

The shot offset settings can be displayed when editing wafer shot map data. See
“Shot Offset/ Shot Offset (Basic Data)” earlier in this manual.

1. Click [Off. List]

Displays shot offset

The shot offset list is displayed.

2. After checking the shot offset, click [OK].

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MCSV-100 • Nikon Wafer Exposure Condition Data

SECTION 6
WAFER EXPOSURE CONDITION DATA

Wafer exposure condition data contains information on exposure conditions,

such as exposure times and focus offsets.

This section describes parameters for wafer exposure condition data, and their
specification.

6.1 DESCRIPTION OF PARAMETERS

1
2

4
5
6

Figure 6-1 Wafer Exposure Condition Data (Page 1 of 3) (When

Exposure Method Specification 1 is Normal and Test-5)

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4
5
6

Figure 6-2 Wafer Exposure Condition Data (Page 1 of 3) (When

Exposure Method Specification

3
4
5
6

Figure 6-3 Wafer Exposure Condition Data (Page 1 of 3) (When

Exposure Method Specification 1 is Test-2 and Test-4)

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1
2

4
5
6

Figure 6-4 Wafer Exposure Condition Data (Page 1 of 3) (When

Exposure Method Specification 1 is Test-3)

13
7 14

8 15

9
16
10

11 17

12

Figure 6-5 Wafer Exposure Condition Data (Page 2 of 3)

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18
19

20

21

Figure 6-6 Wafer Exposure Condition Data (Page 3 of 3) (When

Exposure Method Specification 1 is Other Than “Test-5”)

18

19

20

21

Figure 6-7 Wafer Exposure Condition Data (Page 3 of 3) (When

Exposure Method Specification 1 is “Test-5”)

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The following are parameters for wafer exposure condition data:

6.1.1 Exposure Method (Exposure Condition)

1 Exposure Method Exposure Condition

Item 1 of Figures 6-1 to 6-4; specifies the exposure method. (Table 6-1)

◆ Normal
All shots are exposed with a specified exposure time and focus offset. This
exposure method is used to expose product wafers. (Figure 6-8)

◆ Test-1
Exposes from the first shot on the wafer with exposure time changing at each
shot. The focus offset and leveling offset are fixed. This exposure method is
used when exposing test wafers to determine optimum exposure time.
(Figure 6-9)

◆ Test-2
Focus offset changes at each row, and exposure time changes at each
column on the basis of the center shot.

NOTE
When test wafers are exposed in “Test-Z”, “Test-4”, and “Test-5”, the standard
shot for changing exposure dose, focus offset, and leveling offset is called a
“central shot”. The central shot of the odd array shot map is the map central shot.
The central shot of the even array shot map is the upper-left shot of the map
center.

The leveling offset is fixed.

This exposure method is used when exposing test wafers to determine
optimum exposure time and focus offset simultaneously. (Figure 6-10)

◆ Test-3
Exposure is performed from the first shot on the wafer with focus offset
changing at each shot. The exposure time and leveling offset are fixed. This
exposure method is used when exposing test wafers to determine optimum
focus offset. (Figure 6-11)

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◆ Test-4
Exposure time changes at each row, and focus offset changes at each
column based on the center shot.

NOTE
When test wafers are exposed in “Test-Z”, “Test-4”, and “Test-5”, the standard
shot for changing exposure dose, focus offset, and leveling offset is called a
“central shot”. The central shot of the odd array shot map is the map central shot.
The central shot of the even array shot map is the upper-left shot of the map
center.

The leveling offset is fixed.

This exposure method is used when exposing test wafers to determine
optimum exposure time and focus offset simultaneously. (Figure 6-12)

◆ Test-5 Leveling offset (X) changes at each column and leveling offset (Y)
changes at each row based on the center shot.

NOTE
When test wafers are exposed in “Test-Z”, “Test-4 ”, and “Test-5”, the standard
shot for changing exposure dose, focus offset, and leveling offset is called a
“central shot”, The central shot of the odd array shot map is the map central shot,
The central shot of the even array shot map is the upper-left shot of the map
center.

Exposure time and focus offset are fixed. This exposure method is used when
exposing test wafers to determine optimum leveling offset. (Figure 6-13)

Exposure time and focus offset are specified in Exposure Time and Focus Offset.
Leveling offset is specified in Leveling Offset (On) and Leveling Offset (Off).

NOTE
Machine adjustment parameter adjustment values are also used in focus and
leveling correction in addition to these parameters, for more information, see
“Focusing and Leveling” in the “Function Description”.

Stepping is determined by the exposure stepping mode specification. In

exposure methods (test exposure) “Test-1” through “Test-5” stepping always
starts from the upper left shot.

Exposure method specifications are also referred to during Extended Exposure.

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“See Extended Exposure Data”.

Table 6-1 Wafer Exposure Methods

Wafer Exposure Leveling Correction

Method Exposure Time Focus Offset Value

Normal Fixed for all shots Fixed for all shots Fixed for all shots

Test-1 Changes for each shot Fixed for all shots Fixed for all shots

Changes for each

Test-2 column Changes for each row Fixed for all shots

Test-3 Fixed for all shots Changes for each shot Fixed for all shots

Changes for each

Test-4 Changes for each row column Fixed for all shots

Offset (X): changes at

each column
Offset (Y): changes at
Test-5 Fixed for all shots Fixed for all shots each row

Start

Figure 6-8 Example of “Normal” Exposure Method (Winding Stepping)

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Start Exposure Time

(msec)

Figure 6-9 Example of “Test-1” Exposure Method (Winding Stepping)

Start Exposure Time

(msec)

Focus Offset (µ m)

Figure 6-10 Example of “Test-2” Exposure Method (Winding Stepping)

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Start

Focus Offset (µ m)

Figure 6-11 Example of “Test-3” Exposure Method (Winding Stepping)

Exposure Time
Start
(msec)

Focus Offset (µ m)

Figure 6-12 Example of “Test-4” Exposure Method (Winding Stepping)

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Start Leveling Correction

Value X (µ rad)

Leveling Correction
Value Y (µ rad)

Figure 6-13 Example of “Test-V Exposure Method (Winding Stepping)”

6.1.2 Exposure Time (Exposure Condition)

2 Exposure Time Exposure Condition

Item 2 of Figures 6-1 to 6-4. When the setting for the exposure method is “Test-
1”, “Test-2”, or “Test-4”, specify values in two parts: reference value and
incremental value. Either [msec] or [mJ/ cm2] can be selected as the specification
unit.

• Reference Value
◆ 0.000 ~ 29999.999 [msec] or [mJ/ cm2]

• Incremental Value
◆ -29999.999 ~ 29999.999 [msec] or [mJ/ cm2]

Specify the reference value and incremental value as follows according to the
exposure method (Table 6-2).

• Normal, Test-3, Test-5

Specify a fixed value. The incremental value may not be specified. Wafers
are exposed for a fixed period of time.

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• Test-1
Specify the initial value (Initial) and incremental value (Step). The initial shot
is exposed with the initial value; subsequent exposure times are the sums of
the previous exposure time and the constant incremental value.
• Test-2
Specify the central value (Center) and the incremental value (Step). This
setting will expose the wafer by varying the exposure time for each column
and incremental value based on the central value. When this takes place, the
exposure time for each shot is determined in such a manner that the initial
exposure amount becomes the value for the central shot.
• Test-4
Specify the central value (Center) and the incremental value (Step). This
setting will expose the wafer by varying the exposure time for each row and
incremental value based on the central value. When this takes place, the
exposure time for each shot is determined in such a manner that the initial
exposure amount becomes the value for the central shot.

Table 6-2 Exposure Time Specification Details and Display

Exposure Method Reference Value Incremental Value

Normal, Test-3, Test-5 Fixed Value (not displayed)
Test-1 Initial Value (Initial) Incremental Value (Step)
Test-2, Test-4 Central Value (Center) Incremental Value (Step)

6.1.3 Focus Offset in Exposure (Exposure Condition)

3 Focus Offset in Exposure Exposure Condition

Item 3 of Figures 6-1 to 6-4. When the setting for the exposure method is “Test-
2”, “Test-3”, or “Test-4”, specify values in two parts: reference value and
incremental value.
◆ -30.000 ~ +30.000 [µm]
Specify the reference value and incremental value as follows, depending on the
specification of exposure method. (Table 6-3)

• Normal, Test-1, Test-5 Specify a fixed value. The incremental value may not
be specified. Wafers are exposed using a fixed focus offset.

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• Test-2
Specify the central value (Center) and the incremental value (Step). This
setting will expose the wafer by varying the focus offset for each row and
incremental value based on the central value. When this takes place, the
focus offset for each shot is determined in such a manner that the initial
exposure amount becomes the value for the central shot.
• Test-3
Specify the initial value (Initial) and incremental value (Step). The initial shot
is exposed with the initial value; subsequent shots are exposed with a focus
offset found by successively adding the incremental value to the focus offset.
• Test-4
Specify the central value (Center) and the incremental value (Step). This
setting will expose the wafer by varying the focus offset for each column and
incremental value based on the central value. When this takes place, the
focus offset for each shot is determined in such a manner that the initial
exposure amount becomes the value for the central shot.

Table 6-3 Focus Offset Specification Details and Display

Exposure Method Reference Value Incremental Value

Normal, Test-1, Test-5 Fixed Value (not displayed)
Test-2, Test-4 Central Value (Center) Incremental Value (Step)
Test-3 Initial Value (Initial) Incremental Value (Step)

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6.1.4 Alignment Method (Exposure Condition)

4 Alignment Method Exposure Condition

Item 4 of Figures 6-1 to 6-4; specifies the wafer alignment method.

NOTE
Exposure without wafer alignment will be referred to as “1st exposure”! Overlay
exposure with wafer alignment will be referred to as “2nd exposure”.

◆ 1st Executes first exposure without performing wafer alignment.

◆ Search Executes exposure after wafer search alignment.
◆ EGA Exposes after Search and EGA.
◆ D/D Executes die-by-die alignment exposure.
The wafer alignment sequence is determined by a combination of this parameter
and EGA path, as shown in Table 6-4.

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Table 6-4 Wafer Alignment Method and EGA Path

Wafer Alignment
Method EGA Path Alignment Sequence
1st --------------------------------------------> Exposure
Search Search ----------------------------------> Exposure
EGA g-EGA Search ---> g-EGA------------------> Exposure
Both Search ---> g-EGA----> t-EGA--> Exposure
D/D g-EGA Search ---> g-EGA------------------> D/D Exposure
Both Search ---> g-EGA----> t-EGA--> D/D Exposure

6.1.5 EGA Path (Exposure Condition)

5 EGA Path Exposure Condition

Item 5 of Figures 6-1 to 6-4; specifies the EGA sequence.

◆ g-EGA Only g-EGA is performed.

◆ Both Both g-EGA and t-EGA are performed.
This parameter is valid only when the wafer alignment method specification
is “EGA” or “D/ D”.

6.1.6 Focus Offset in Alignment (Exposure Condition)

6 Focus Offset in Alignment Exposure Condition

Item 6 of Figures 6-1 to 6-4; specifies the focus offset during wafer alignment
using the focus offset during exposure as a reference.

◆ -999.999 ~ 999.999 [µm]

This parameter is used when resist is thick and the best focus differs during
exposure and wafer alignment. This parameter is valid for focusing during all
alignment except TTR-11A (option).
Focus offset during alignment is as follows:

(Total Focus Offset During Wafer Alignment) = (Exposure Focus Offset) +

(Alignment Focus Offset)

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6.1.7 Wafer Offset (Wafer Correction)

7 Wafer Offset Wafer Correction

Item 7 of Figure 6-5; specifies position correction values to add to EGA result.

NOTE
These correction values are used as shot position offset values even when wafer
alignment is not executed.

◆ -9999.000 ~ 9999.000 [µm] (Wafer Coordinate System)

This parameter has the same sign as the direction in which the shot position
is to be corrected; i. e., a positive value is specified as correct the shot array
position in the positive direction.

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6.1.8 Wafer Scaling (Wafer Correction)

8 Wafer Scaling Wafer Correction

Item 8 of Figure 6-5; specifies scaling corrections to wafer scaling values

determined by EGA.

NOTE
These correction values are used as wafer scaling values even when wafer
alignment is not executed.

◆ -9999.000 ~ 9999.000 [ppm] (Wafer Coordinate System)

This parameter has the same sign as the direction in which the shot position is to
be corrected; i. e., specify a positive value to expand the shot array.

Sx = (x' - x)/x x 106

Sy = (y' - y)/y x 106
Sx, Sy: Wafer Scaling Correction Value

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6.1.9 Wafer Orthogonality (Wafer Correction)

9 Wafer Orthogonality Wafer Correction

Item 9 of Figure 6-5; it is the correction for wafer orthogonality factors determined
by EGA.

NOTE
These correction values are used as orthogonality corrections even when wafer
alignment is not executed.

◆ -9999.000 ~ 9999.000 [µrad] (Wafer Coordinate System)

This parameter is specified with the same sign as the direction in which the shot
position is to be corrected; i. e., specify a positive value to slant the Y axis of the
shot array to the left.

Wafer Orthogonality
Offset Value

Shot position before correction

Shot position after correction

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6.1.10 Wafer Rotation (Wafer Correction)

10 Wafer Rotation Wafer Correction

Item 10 of Figure 6-5; specifies the correction to wafer rotation factors

determined by EGA.

NOTE
These values are used as rotation correction values even when wafer alignment
is not executed.

NOTE
The wafer rotation correction value adds a correction to the correction value for
the rotation of each shot.

◆ -9999.000 ~ 9999.000 [µrad] (Wafer Coordinate System)

This parameter is specified with the same sign as the direction in which the
shot position is to be corrected: i. e., specify a positive value to rotate the
shot array to the left.

Wafer Rotation Correction Value

Shot position before correction

Shot position after correction (Note)

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6.1.11 EGA Result Usage (Wafer)-Wafer Correction

11 EGA Result Usage (Wafer) Wafer Correction

Item 11 of Figure 6-5. When calculating exposure alignment, this parameter

specifies whether g-EGA results or t-EGA results are used in EGA alignment.

NOTE
See “EGA Result Usage” in “Function Description” for more information on the
method of calculating wafer factors by the EGA result usage (wafer) and
correction fix (wafer) parameters.

◆ g-EGA g-EGA correction values are used.

◆ t-EGA t-EGA correction values are used.
When EGA path is set to “g-EGA”, specify “g-EGA” for all usage.

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6.1.12 Correction Fix (Wafer)—Wafer Correction)

12 Correction Fix (Wafer) Wafer Correction

Item 12 of Figure 6-5; specifies the use of the exposure position offset values.

NOTE
See “EGA Result Usage” in “Function Description” for more information on the
method of calculating wafer factors by the EGA result usage (wafer) and
correction fix (wafer) parameters.

NOTE
An addition method is always applied to wafer offset factors, which are used in
wafer position correction.

◆ Fix
Perform exposure position correction with the exposure position offset value
only, with the EGA factor as “0”.

NOTE
The fixed method treats as “0” not only the EGA factor but also the wafer search
alignment result.

This correction method is called the fixed method.

◆ No Fix
Use the EGA result in exposure position correction, in addition to the EGA
correction value. This correction method is called the addition method.

Thus, fixed method and addition method wafer factors may be expressed as
follows:

• Fixed method
EGA result = 0
• Addition method
EGA result = Factor Specified by EGA Result Usage (Wafer)

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NOTE
See “Wafer Exposure” in “Function Description” for more information on the
method of correcting the exposure position by EGA alignment results and
exposure position offset values.

6.1.13 Shot Scaling (Shot Correction)

13 Shot Scaling Shot Correction

Item 13 of Figure 6-5; specifies the correction value for shot scaling factors
computed by Weighted EGA.

NOTE
These correction values are used as shot position offset values even when wafer
alignment is not executed.

◆ -999.999 ~ 999.999 [ppm] (Wafer Shot Coordinate System)

The positive direction is that in which the shots expand.

Sx = (x' - x)/2x x 106

Sy = (y' - y)/2y x 106
Sx, Sy: Wafer Scaling Correction Value

Shot position before correction

Shot position after correction

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6.1.14 Shot Rotation (Shot Correction)

14 Shot Rotation Shot Correction

Item 14 of Figure 6-5; specifies the correction value for shot rotation factors
computed by Weighted EGA.

NOTE
These correction values are used as shot rotation values even when wafer
alignment is not executed.

◆ -9999.999 ~ 9999.999 [µrad] (Wafer Shot Coordinate System)

Positive direction is that in which the shot array rotates to the left.

Shot Rotation Correction

Value

Shot position before correction

Shot position after correction

6.1.15 EGA Result Usage (Shot)-Shot Correction

15 EGA Result Usage (Shot) Shot Correction

Item 15 of Figure 6-5. When calculating the exposure position, this parameter
specifies, for each factor individually, whether g-EGA results are used or t-EGA
results are used for the shot scaling factor and shot rotation factor, respectively.

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NOTE
See “EGA Result Usage” in “Function Description” for more information on the
method of calculating wafer factors by the EGA result usage (shot) and
correction fix (shot) parameters.

◆ g-EGA Use corrections computed with g-EGA.

◆ t-EGA Use corrections computed with t-EGA.
When EGA path (Exposure Condition) is set to “g-EGA”, specify all “g-EGA” for
all conditions.

6.1.16 Correction Fix (Shot)-Shot Correction

16 Correction Fix (Shot) Shot Correction

Item 16 of Figure 6-5; specifies the use of the exposure position offset values.

◆ Fix Correct the exposure position by exposure position offset values alone,
with the EGA result as “0”. This method is called the fixed method.
◆ No Fix Add the EGA result in exposure position correction to the
exposure position offset values. This method is called the addition method.

NOTE
See “Exposure by Weighted EGA and EGA Factors” in “Function Description” for
more information on the method of correcting the exposure position by shot
values and exposure position correction values.

Thus, fixed method and addition method shot factors may be expressed as
follows:

• Fixed method Shot Value = 0

• Addition method Shot Value = Value Specified by EGA Result Usage (Shot)

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6.1.17 Estimated Wafer Scaling (Exposure Condition)

17 Estimated Wafer Scaling Exposure Condition

Item 17 of Figure 6-5. (Unused)

6.1.18 Leveling Mode (Leveling Correction)

18 Leveling Mode Leveling Correction

Item 18 of Figures 6-6 and 6-7; specifies the leveling method at exposure.

◆ Normal Execute leveling on shots at which leveling can be performed.

For shots on the wafer edge that cannot be leveled, the leveling
results of the immediately preceding shot are used unchanged.
On the first exposure shot, however, the system forces a shift
leveling processing.

NOTE
For more information on shift leveling, see “Leveling” in the “Function
Description”.

◆ Shift Execute leveling on shots where leveling can be performed. For

shots on the wafer edge that cannot be leveled, shift leveling is
performed, or the leveling results of the immediately preceding
shot are used unchanged.

NOTE
Global leveling is available only on steppers equipped with the global leveling
option.

◆ No Does not perform leveling.

◆ Global Performs global leveling.
This parameter is valid only when the leveling switch is set to “Refer to P. P.
(Leveling)“.

6.1.19 Leveling Offset (On)-leveling Correction

19 Leveling Offset (On) Leveling Correction

Item 19 of Figures 6-6 and 6-7; specifies the offset added to stage level (leveling
accuracy) calculated by the leveling system. When the exposure method
specification is “Test-V, specify leveling in two parts: reference value and
incremental value”.

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NOTE
For more information on the method of calculating the best level position used by
this parameter, see “Leveling” in the “Function Description”.

◆ -999.999 ~ 999.999 [µrad]

Specify the reference value and incremental value as follows, depending on the
specification of the exposure method.

• Normal, Test-1, Test-2, Test-3, Test-4

A fixed value is specified. The incremental value may not be specified.
Exposure is performed with the leveling offset fixed.
• Test-5
Specifies the central value (Center) and incremental value (Step). This
setting will expose the wafer by varying, for each incremental value, the
leveling offset (X) for each column and the leveling offset (Y) for each row,
based on the central value. At this time, the leveling offset value for each
shot is determined so that the shot map central shot becomes the central
value.

This parameter is valid only when the leveling is executed. For information on the
leveling execution conditions, see the explanations on the Leveling Method and
Leveling Switch.

6.1.20 Leveling Offset (Off) (Leveling Correction)

20 Leveling Offset (Off) Leveling Correction

Item 20 of Figures 6-6 and 6-7; specifies the offset value added to the stage
leveling (leveling reset accuracy) when leveling is not executed. When the
exposure method specification is “Test-5”, specify leveling in two parts: reference
value and incremental value.

NOTE
For more information on the method of calculating the best level used by this
parameter, see “Leveling” in the “Function Description”.

◆ -999.999 ~ 999.999 [µrad]

Specify the reference value and incremental value as follows, depending on the
specification of the exposure method.

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• Normal, Test-1, Test-2, Test-3, Test-4

A fixed value is specified. The incremental value may not be specified.
Exposure is performed with the leveling offset fixed.
• Test-5
Specifies the central value (Center) and incremental value (Step). This
setting will expose the wafer by varying, for each incremental value, the
leveling offset (X) for each column and the leveling offset (Y) for each row,
based on the central value. At this time, the leveling offset value for each
shot is determined such that the shot map central shot becomes the central
value.

This parameter is valid only when leveling is not executed. For information on the
leveling execution conditions, see the explanations on the Leveling Method and
Leveling Switch.

6.1.21 Leveling Coefficient Offset (Leveling Correction)

21 Leveling Coefficient Offset Leveling Correction

Item 21 of Figures 6-6 and 6-7; specifies for XX, XY, YX, and YY the offset for
the coefficients a, b, d, e of EGL functions computed from EGL measurement
results.

NOTE
For details, see the “EGL Option Description”.

◆ -999.99999~999.99999
Note that the actual offset is 1/ 1 000 of this parameter. This parameter is
normally set to “0”.

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6.2 PARAMETER SPECIFICATION

Click [Exp. cond.] in the Section Select window.

The Wafer Exposure Condition Data Specification window is displayed.

Figure 6-14 Wafer Exposure Condition Data Specification Window

Specify parameters according to the following procedure:

a. Set the pointer to the area of the parameter to be specified, and click.
b. Specify the parameter.
c. Repeat a and b. Click [Next] to display the next page, [Prev.] to display the
previous page.
d. When parameters specification is complete, click one of the following
buttons.

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Ignores editing and ends data Renders editing valid and ends data
section editing (Note) section editing

NOTE
[Apply] renders editing valid, but does not end session. If [Apply] was pressed
during data section editing, and cancel was pressed, editing performed after
[Apply] was pressed is not saved.

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SECTION 7
USER OPTION DATA

User option data is information on extended functions, such as wafer edge

exposure and extended exposure.

This section describes parameters for user option data, and their specification.

7.1 DESCRIPTION OF PARAMETERS

Figure 7-1 User Option Data Menu Window

User option data is divided into the following blocks:

• Extended Exposure Data

Specifies the parameters for extended exposure, allowing wafer exposure
with different exposure time and focus offset for each blind ID. For details
see “Extended Exposure Conditions Data”.

NOTE
These parameters are valid only on steppers equipped with these options.

• Multipoint Focus Data

Specifies the parameters for optimum focus (multipoint focus), by weighing
the results of each of five points measured within a shot.
For details see “Multipoint Focus Data”.
• Extended EGA Data
Specifies the parameters for extended EGA according to intrashot multipoint
measurement.
For details see “Extended EGA Data”.

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• Illumination Control Data Specifies the parameters for switching illumination

or apertures.
For details see “Imaging System Control Data”.
• Extended Sequence Parameter Specifies parameters for temporarily
changing system parameter settings.
For details see “Extended Sequence Parameter”.
• Wafer Edge Exposure Data Specifies the parameters for wafer edge
exposure (which exposes the wafer edge or outer margin), claw position, and
the OF part of a wafer when loading a wafer.
For details see “Wafer Edge Exposure Data”.

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7.2 EXTENDED EXPOSURE CONDITION DATA

The display of the extended exposure condition data specification window differs
depending on the exposure method.

1
Exposure Method (Note)

2
3

Figure 7-2 Extended Exposure Condition Data (When Exposure Method

Specification is “Normal” and “Test-5”)

NOTE
The exposure method in wafer exposure condition data can also be specified in
this window,

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1
Exposure Method (Note)

2 3

Figure 7-3 Extended Exposure Condition Data (When Exposure Method

Specification is “Test-1”)

NOTE
The exposure method in wafer exposure condition data can also be specified in
this window.

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1
Exposure Method (Note)

2 3

Figure 7-4 Extended Exposure Condition Data (When Exposure Method

Specification is “Test-2” and “Test-4”)

NOTE
The exposure method in wafer exposure condition data can also be specified in
this window.

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1
Exposure Method (Note)

2 3

Figure 7-5 Extended Exposure Condition Data (When Exposure Method

Specification is “Test-3”)

NOTE
The exposure method in wafer exposure condition data can also be specified in
this window.

7.2.1 Extended Exposure

1 Extended Exposure

Item 1 of Figures 7-2 to 7-5; specifies whether to perform extended exposure.

◆ Yes Perform extended exposure. Performs exposure with different

exposure time and focus offset for each blind ID. Exposure time
(extended) and focus offset (extended) are set with these
parameters. Specifications for exposure time and focus offset
are not used.
◆ No Do not perform extended exposure.

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7.2.2 Exposure Time (Extended)

2 Exposure Time (Extended)

Item 2 of Figures 7-2 to 7-5; specifies the extended exposure time.

• Reference Value
◆ 0.000 ~ 29999.999 [msec] or [mJ/ cm2]

• Increment
◆ -29999.999 ~ 29999.999 [msec] or [mJ/ cm2]

Specification details are the same as explained under Exposure Time (Exposure
Condition). The specification units (msec or mJ/ cm2) here are units used in
Exposure Time (Exposure Condition).

7.2.3 Focus Offset (Extended)

3 Focus Offset (Extended)

Item 3 of Figures 7-2 to 7-5; specifies the focus offset.

◆ -30.000 ~ +30.000 [µm]

Details of the specification are the same as Focus Offset (Exposure Condition).

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Figures 7-6 and 7-7 are examples of extended exposure condition data and blind
ID specification. (See “Blind ID/ Blind ID” in the “Wafer Shot Map Data” section
earlier in this manual.) The exposure dose and focus offset of each shot in this
case are as shown in Figure 7-8.

Figure 7-6 Example of Extended Exposure Condition Data (Exposure

Method = “Normal”)

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Figure 7-7 Example of Blind ID Specification

Exposure Time (msec)

Focus Offset (µ m)

Figure 7-8 Example of Extended Exposure (Exposure Method =

“Normal”)

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7.3 MULTIPOINT FOCUS DATA

1
2

Figure 7-9 Multipoint Focus Data Window

Multipoint focus data consist of the following:

7.3.1 Multipoint Focus

1 Multipoint Focus

Item 1 of Figure 7-9; specifies whether to perform focusing by multipoint focus.

◆ Yes Performs focusing by multipoint focus.

◆ No Does not perform focusing by multipoint focus; focusing is performed
by a single point.

7.3.2 ID Number

2 ID Number

Item 2 of Figure 7-9; specifies the ID of the multipoint focus condition that will be
used. These conditions appear in the multipoint focus parameters.

NOTE
The multipoint focus condition ID can be found in the edit MULTI-AF condition
command in the option-1 (DATA) command. For details, see the “Multipoint
Focus Option Description ”.

◆ 1 -128

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7.4 EXTENDED EGA DATA

Figure 7-10 Extended EGA Data Window

Extended EGA Data consist of the items shown below.

NOTE
For more information on extended EGA, see “Exposure by Extended EGA and
EGA Factors” in “Function Description”.

7.4.1 Multipoint EGA

1 Multipoint EGA

Item 1 of Figure 7-10; specifies whether to perform multipoint measurement EGA

(multipoint measurement within a shot).

◆ No Does not perform multipoint EGA measurement. Measures, on all

wafers one alignment mark in the EGA shot for each group,
computing only the wafer-related values.
◆ All Performs extended EGA measurement on all wafers, computing the
global factors and shot factors. In the following cases, however, only
the wafer factor is calculated:
• When the number of alignment marks is set to two groups or less.

NOTE
The number of alignment marks measured is specified by the Number of LSA-
EGA Marks, the Number of FIA-EGA Marks, and the Number of LIA-EGA Marks.

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• When the EGA shot specification is “only two shots”.

◆ Head Performs extended EGA measurement on only the first wafer in the
lot, computing the wafer values and shot. The shot values of the first
wafer are used unchanged for the second and subsequent wafers. In
the following cases, however, all marks are measured for all wafers,
with only the wafer global factor calculated:
• When the alignment mark specification is set to two marks or less.
• When the EGA shot specification is “only two shots”.

7.4.2 Shot Magnification Control

2 Shot Magnification Control

Item 2 of Figure 7-10; specifies how shot magnification is controlled.

NOTE
When the Lens Magnification Control is set to “off” , shot magnification control
cannot be performed.

◆ No Perform magnification control using only wafer scaling offset and

shot scaling offset.
◆ Wafer Perform magnification control using the wafer scaling factor and
wafer scaling offset calculated by EGA measurement as well as the
shot scaling offset.
◆ Shot Perform magnification control using the shot scaling factors and
wafer scaling factors calculated by extended EGA measurement as
well as the wafer scaling offset and shot scaling offset. When shot
scaling factors cannot be computed, however, magnification control
is performed with these factors set to “0”.

NOTE
See the explanation on multipoint EGA for cases in which the shot scaling factor
cannot be determined.

This parameter (2 Shot Magnification Control) is valid only when the shot
magnification control switch specification is “Refer to PP (Mag. Control)”.

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7.5 IMAGING SYSTEM CONTROL DATA

Figure 7-11 Imaging System Control Data Screen

Imaging System Control Data consists of the following:

7.5.1 Illumination ID

1 Illumination ID

Item 1 of Figure 7-11; specifies, from among the illumination IDs registered in the
illumination system condition data, the illumination system ID when the imaging
system changeover mode is set to “Auto.”

NOTE
Illumination IDs are set using the “edit illumination condition” command in the
“option-2( DATA)” command; for more information, see the “Imaging System
Control Option Description”.

◆ 0 -99
When “0” is specified, however, the system uses the imaging system ID specified
for the default imaging system ID( s).

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7.6 EXTENDED SEQUENCE PARAMETER

Figure 7-12 Extended Sequence Parameter Window

The extended sequence parameter is described as follows:

7.6.1 Extended Sequence Condition Name

1 Extended Sequence Condition Name

Item 1 in the above figure, it specifies the extended sequence condition name.

NOTE
Specifying a condition name other than “INC” or “ONEWAY” will result in an error
upon exposure processing execution.

Upon exposure processing, some of the system parameters are temporarily

respecified, according to conditions specified by this parameter.

◆ INCConditions for performing exposure (INC exposure) for image plane

inclination measurement.
System parameters are set to the following:
• Blind central focusing: “On-2”
• Shift focusing switch: “Shift Focus”

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◆ ONEWAY Conditions for performing unidirectional stepping exposure in the

X direction.
System parameters are set to the following:
• Exposure stepping mode: “X”

For information on the operation of each Sequence see the explanation on the
system parameters that have been set.

7.7 WAFER EDGE EXPOSURE DATA

1
2

Figure 7-13 Wafer Edge Exposure Data Window

The following are the parameters for wafer edge exposure data.

7.7.1 Wafer Edge Exposure

1 Wafer Edge Exposure

Item 1 of Figure 7-13; specifies whether wafer edge exposure is executed.

◆ Yes Executes wafer edge exposure

◆ No Does not execute wafer edge exposure
This parameter is valid only when the wafer edge exposure switch is set to “Refer
to P. P. (Edge)”.

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7.7.2 Edge Exposure Condition Name

2 Edge Exposure Condition Name

Item 2 of Figure 7-13; specifies, from among the conditions registered as Wafer
Edge Exposure conditions, the name of the condition to be used.

◆ 1-32 alphanumeric and special characters (except “*”, “%”, “?”, “=”, “ / ” , “ . ” ,
and “@”)
Note that this only specifies the file name part of the Wafer Edge Exposure
condition file name, not the file type name (.EDG).

Example:

Wafer Edge Exposure

Condition File Name

COND1.EDG

Wafer Edge Exposure

Condition Name

NOTE
Wafer edge exposure conditionsare found in the “edit EDGE EXP. condition
command” in the “option-2( DATA) command”. For more information about this,
see the Guide to Using the Wafer Edge Exposure Option.

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7.7.3 Exposure Time (Edge)

3 Exposure Time (Edge)

Item 3 of Figure 7-1 3; specifies the exposure time for wafer edge exposure.

• Circle Specifies the exposure time for the circumference part and claw
position of the wafer.

• OF Specifies the exposure time for the OF part of the wafer.

◆ 0.000 ~ 29999.999 [msec]

Edge

OF Part Claw

Figure 7-14 Wafer Edge Exposure

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7.8 PARAMETER SPECIFICATION

Click [Option] in the Section Select window to display the User Option Data Menu
Window.

Specification Window for

Each Option Data

Figure 7-15 User Option Data Menu Window

Specify parameters according to the following procedure:

1. Selecting Option Data

a. Click the option data to be edited in the user option data menu window.
The option data selected becomes highlighted.
b. Click [OK].

Starts option Ends data

data editing section editing

The option data specification window is displayed.

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2. Specifying Option Data

a. In each option data specification window, set the pointer to the area of the
target parameter, and click.
b. Specify the parameter.
c. Repeat steps “a.” and “b.”.
d. When parameter specification is complete, select one of the following
buttons.

Ends option data editing (Note) Renders edited data valid and
ends option data editing

NOTE
[Apply] renders edited data valid without exiting screen. If cancel is pressed,
data entered after [Apply] was pressed is lost.

3. Ending Data Section Editing

a. Set the pointer to [Cancel] in the user option data menu window, and click.

Ends data
section editing

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