Supertex inc.

2N6660
N-Channel Enhancement-Mode
Vertical DMOS FET
Features General Description
►► Free from secondary breakdown The Supertex 2N6660 is an enhancement-mode (normally-
►► Low power drive requirement off) transistor that utilizes a vertical DMOS structure and
►► Ease of paralleling Supertex’s well-proven silicon-gate manufacturing process.
►► Low CISS and fast switching speeds This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input
►► Excellent thermal stability
impedance and positive temperature coefficient inherent
►► Integral source-drain diode
in MOS devices. Characteristic of all MOS structures, this
►► High input impedance and high gain
device is free from thermal runaway and thermally-induced
►► Hi-Rel processing available secondary breakdown.
Applications Supertex’s vertical DMOS FETs are ideally suited to a wide
►► Motor controls range of switching and amplifying applications where very
►► Converters low threshold voltage, high breakdown voltage, high input
►► Amplifiers impedance, low input capacitance, and fast switching
►► Switches speeds are desired.
►► Power supply circuits
►► Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)

Ordering Information
BVDSS/BVDGS RDS(ON) ID(ON)
Device Package (max) (min)
(V)
(Ω) (A)

2N6660 TO-39 60 3.0 1.5

TO-39 package is RoHS compliant (‘Green’).
Consult factory for die / wafer form part numbers.
Refer to Die Specification VF21 for layout and dimensions. Pin Configuration
Absolute Maximum Ratings
Parameter Value
GATE
Drain-to-source voltage BVDSS
SOURCE
Drain-to-gate voltage BVDGS
DRAIN
Gate-to-source voltage ±20V
TO-39
Operating and storage temperature -55°C to +150°C (Case : Drain)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All Product Marking
voltages are referenced to device ground.

2N6660 YY = Year Sealed

YYWW WW = Week Sealed

Package may or may not include the following marks: Si or

TO-39

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
 2N6660

Thermal Characteristics
ID ID Power Dissipation θjc θja IDR† IDRM
Package (continuous)† (pulsed) @TC = 25OC
(A) (OC/W) (OC/W) (mA) (A)
(mA) (W)
TO-39 410 3.0 6.25 20 125 410 3.0
† ID (continuous) is limited by max rated Tj.

Electrical Characteristics (T = 25°C unless otherwise specified)

A

Sym Parameter Min Typ Max Units Conditions

BVDSS Drain-to-source breakdown voltage 60 - - V VGS = 0V, ID = 10µA
VGS(th) Gate threshold voltage 0.8 - 2.0 V VGS = VDS, ID = 1.0mA
ΔVGS(th) VGS(th) change with temperature - -3.8 -5.5 mV/OC VGS = VDS, ID = 1.0mA
IGSS Gate body leakage current - - 100 nA VGS = ±20V, VDS = 0V
- - 10 VGS = 0V, VDS = Max rating
IDSS Zero gate voltage drain current µA VDS = 0.8 Max Rating,
- - 500
VGS = 0V, TA = 125OC
ID(ON) On-state drain current 1.5 - - A VGS = 10V, VDS = 10V

Static drain-to-source on-state - - 5.0 VGS = 5.0V, ID = 0.3A

RDS(ON) Ω
resistance - - 3.0 VGS = 10V, ID = 1.0A
GFS Forward transconductance 170 - - mmho VDS = 25V, ID = 0.5A
CISS Input capacitance - - 50
VGS = 0V,
COSS Common source output capacitance - - 40 pF VDS = 24V,
f = 1.0MHz
CRSS Reverse transfer capacitance - - 10
t(ON) Turn-on time - - 10 VDD = 25V, ID = 1.0A,
ns
t(OFF) Turn-off time - - 10 RGEN = 25Ω

VSD Diode forward voltage drop - 1.2 - V VGS = 0V, ISD = 1.0A
trr Reverse recovery time - 350 - ns VGS = 0V, ISD = 1.0A
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

VDD
10V 90%
RL
INPUT Pulse
10% Generator
0V OUTPUT
t(ON) t(OFF)
RGEN
td(ON) tr td(OFF) tf

VDD INPUT D.U.T.

10% 10%
OUTPUT
0V 90% 90%

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
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 2N6660

3-Lead TO-39 Package Outline (N2)

ΦD
ΦD1

Φa

A
β β

Seating
2 Plane

1 3 h 1 2 3

Φb
α
L

k
j

Bottom View Side View

Symbol α β A Φa Φb ΦD ΦD1 h j k L
MIN .240 .190 .016 .350 .315 .009 .028 .029 .500
Dimension 45O 90O
NOM - - - - - - - - -
(inches) NOM NOM
MAX .260 .210 .021 .370 .335 .125 .034 .040 .560*
JEDEC Registration TO-39.
* This dimension is not specified in the JEDEC drawing.
Drawings not to scale.
Supertex Doc. #: DSPD-3TO39N2, Version B052009.

(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

©2011 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Doc.# DSFP-2N6660 Tel: 408-222-8888
C031411 www.supertex.com
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