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Silicon NPN Power Transistor: Description

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0% found this document useful (0 votes)
14 views3 pages

Silicon NPN Power Transistor: Description

Uploaded by

thanmalmalviya
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

isc Silicon NPN Power Transistor KSH200

DESCRIPTION
·High DC current gain
·Built-in a damper diode at E-C
·Lead formed for surface mount applications(NO suffix)
·Straight lead(IPAK,“-I”suffix)
·DPAK for surface mount applications
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Low frequency power amplifier

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 40 V

VCEO Collector-Emitter Voltage 25 V

VEBO Emitter-Base Voltage 8 V

IC Collector Current-Continuous 5 A

Total Power Dissipation


PC 1.4 W
@ Ta=25℃

Total Power Dissipation


PC 12.5 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark


isc Silicon NPN Power Transistor KSH200

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 25 V

VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 0.3 V

VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 2.0A; IB= 200mA 0.75 V

VCE(sat)-3* Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.8 V

VBE(sat)* Base-Emitter Saturation Voltage IC= 5A; IB= 1A 2.5 V

VBE(on)* Base-Emitter On Voltage IC= 2A; VCE=1V 1.6 V

ICBO Collector Cutoff Current VCB= 40V; IE= 0 100 nA

IEBO Emitter Cutoff Current VEB= 8V; IC= 0 100 nA

hFE1* DC Current Gain IC= 0.5A; VCE= 1V 70

hFE2* DC Current Gain IC= 2A; VCE= 1V 45 180

hFE3* DC Current Gain IC= 5A; VCE= 2V 10

fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 65 MHz

Cob Collector output capacitance VCB=10V ,IE=0,f=1MHz 80 pF

*:Pulse test PW≤300us,duty cycle≤2%

isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark


isc Silicon NPN Power Transistor KSH200
Outline Drawing

NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website:www.iscsemi.com 3 isc & iscsemi is registered trademark

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