Delhi Technological University
Department of Electronics and Communication Engineering
[Link], ECE, IIIrd sem Analog Electronics – I (EC 201)
MM 20 Assignment- 1 B Weightage 10 Marks
Note: All questions are of 2 marks except question 7 and 8 which are of 4 marks.
Course Outcomes
1. Explain the principles of operation of semiconductor devices such as diode, BJT, JFET and MOSFET;
2. Determine parameter values for large and small signal models for diodes, BJTs and MOSFETs based
on knowledge of the device structure, dimensions, and bias conditions.
3. Analyze diode-based rectifiers, clippers, clampers, multipliers and regulator circuits
4. Analyze and Determine performance parameters of single stage and multistage amplifier circuits
using BJTs and MOSFETs
5. Analyze and design biasing circuits using discrete components and constant current sources for
BTTs and MOSFETS.
6. Design, construct and take measurement of various analog circuits and compare experimental resul
ts in the laboratory with theoretical analysis.
1. Determine the range of values of Vi that will maintain the Zener diode of Fig. 1 in the “on”
state. CO3
2. Determine v o for each network of Fig. 2 for the input shown. CO3
Fig.2
3. Plot the input/output characteristic of the circuit shown in Fig. 3 using (a) the ideal
model and (b) the constant-voltage model. CO3
Fig. 3 Fig. 4
4. Plot the input/output characteristic for the circuit shown in Fig. 4. Assume a constant
voltage model for the diode CO3
5. Plot the input/output characteristic for the circuit shown in Fig. 5. CO3
Fig. 5.
6. Plot the output characteristic for the circuit shown in Fig. 6. CO3
Fig. 6
7. Determine vo and the required PIV rating of each diode for the configuration of Fig. 7. In
addition, determine the (i) maximum current through each diode. (ii) ripple factor CO3
Fig. 7
8. Design a clamper that performs the function indicated in Fig. 8. CO3
Fig. 8
