STFH10N60M2

N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh™ M2

Power MOSFET in a TO-220FP wide creepage package
Datasheet - production data

Features
Order code VDS @ TJmax RDS(on) max ID
STFH10N60M2 650 V 0.60 Ω 7.5 A

 Extremely low gate charge

 Excellent output capacitance (COSS) profile
 100% avalanche tested
 Zener-protected
 Wide distance of 4.25 mm between the pins

Applications
 Switching applications
 LLC converters, resonant converters

Description
This device is an N-channel Power MOSFET
Figure 1: Internal schematic diagram
developed using MDmesh™ M2 technology.
D(2) Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.

G(1)
The TO-220FP wide creepage package provides
increased surface insulation for Power MOSFETs
to prevent failure due to arcing, which can occur
in polluted environments.

S(3) AM15572v1_no_tab

Table 1: Device summary

Order code Marking Package Packing
STFH10N60M2 10N60M2 TO-220FP wide creepage Tube

May 2017 DocID029418 Rev 4 1/12

This is information on a product in full production. [Link]
Contents STFH10N60M2

Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 TO-220FP wide creepage package information ................................ 9
5 Revision history ............................................................................ 11

2/12 DocID029418 Rev 4

STFH10N60M2 Electrical ratings

1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate-source voltage ± 25 V
ID(1) Drain current (continuous) at TC = 25 °C 7.5 A
ID(1) Drain current (continuous) at TC = 100 °C 4.9 A
(1)(2)
IDM Drain current (pulsed) 30 A
PTOT Total dissipation at TC = 25 °C 25 W
(3)
dv/dt Peak diode recovery voltage slope 15 V/ns
(4)
dv/dt MOSFET dv/dt ruggedness 50 V/ns
Insulation withstand voltage (RMS) from all three leads to external
VISO 2500 V
heat sink (t = 1 s; TC = 25 °C)
Tstg Storage temperature range
- 55 to 150 °C
Tj Operating junction temperature range

Notes:
(1)Limited by package.
(2)Pulse width limited by package.
(3)I
SD ≤ 7.5 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V
(4)V
DS ≤ 480 V

Table 3: Thermal data

Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 5 °C/W
Rthj-amb Thermal resistance junction-ambient 62.5 °C/W

Table 4: Avalanche characteristics

Symbol Parameter Value Unit
Avalanche current, repetitive or not repetitive
IAR 1.5 A
(pulse width limited by Tjmax)
Single pulse avalanche energy
EAS 110 mJ
(starting Tj=25 °C, ID= IAR; VDD=50 V)

DocID029418 Rev 4 3/12

Electrical characteristics STFH10N60M2

2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5: On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
Drain-source breakdown
V(BR)DSS VGS = 0 V, ID = 1 mA 600 V
voltage
VGS = 0 V, VDS = 600 V 1 µA
Zero gate voltage drain
IDSS VGS = 0 V, VDS = 600 V,
current 100 µA
TC=125 °C (1)
IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
Static drain-source on-
RDS(on) VGS = 10 V, ID = 3 A 0.55 0.60 Ω
resistance

Notes:
(1)Defined by design, not subject to production test.

Table 6: Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance - 400 - pF
Coss Output capacitance VDS = 100 V, f = 1 MHz, - 22 - pF
VGS = 0 V
Reverse transfer
Crss - 0.84 - pF
capacitance
Coss Equivalent output
(1) VDS= 0 to 480 V, VGS= 0 V - 83 - pF
eq. capacitance
RG Intrinsic gate resistance f = 1 MHz, ID=0 A - 6.4 - Ω
Qg Total gate charge VDD = 480 V, ID = 7.5 A, - 13.5 - nC
VGS = 0 to 10 V
Qgs Gate-source charge - 2.1 - nC
(see Figure 15: "Test circuit for
Qgd Gate-drain charge gate charge behavior") - 7.2 - nC

Notes:
(1)C is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
oss eq.
increases from 0 to 80% VDSS

4/12 DocID029418 Rev 4

STFH10N60M2 Electrical characteristics
Table 7: Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 300 V, ID = 3.75 A, - 8.8 - ns
tr Rise time RG = 4.7 Ω, VGS = 10 V - 8 - ns
(see Figure 14: "Test circuit for
td(off) Turn-off delay time resistive load switching times" - 32.5 - ns
and Figure 19: "Switching time
tf Fall time waveform") - 13.2 - ns

Table 8: Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD(1) Source-drain current - 7.5 A
Source-drain current
ISDM(1)(2) - 30 A
(pulsed)
VSD(3) Forward on voltage ISD = 7.5 A, VGS = 0 V - 1.6 V
trr Reverse recovery time ISD = 7.5 A, di/dt = 100 A/µs - 270 ns
Qrr Reverse recovery charge VDD = 60 V - 2 µC
(see Figure 16: "Test circuit for
IRRM Reverse recovery current inductive load switching and - 14.4 A
diode recovery times")
trr Reverse recovery time ISD = 7.5 A, di/dt = 100 A/µs - 376 ns
Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C - 2.8 µC
(see Figure 16: "Test circuit for
IRRM Reverse recovery current inductive load switching and - 15 A
diode recovery times")

Notes:
(1)Limited by package.
(2)Pulse width limited by safe operating area.
(3)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

DocID029418 Rev 4 5/12

Electrical characteristics STFH10N60M2
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance

Figure 4: Output characteristics Figure 5: Transfer characteristics

Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance

VGS VDS
(V) (V)
12 VDS VDD=480V
ID=7.5A 500
10
400
8
300
6
200
4

100
2

0 0
0 2 4 6 8 10 12 Qg(nC)

6/12 DocID029418 Rev 4

STFH10N60M2 Electrical characteristics
Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs.
temperature
GADG070620161454FSR
C
(pF)
ID=250 µA
1000
Ciss

100

Coss
10

1 Crss

0.1
0.1 1 10 100 VDS(V)

Figure 10: Normalized on-resistance vs temperature Figure 11: Source-drain diode forward
characteristics

ID=3 A

Figure 12: Normalized V(BR)DSS vs temperature Figure 13: Output capacitance stored energy
GADG070620161505FSR
Eoss(µJ)

0
0 100 200 300 400 500 600 VDS(V)

DocID029418 Rev 4 7/12

Test circuits STFH10N60M2

3 Test circuits
Figure 14: Test circuit for resistive load Figure 15: Test circuit for gate charge
switching times behavior

Figure 16: Test circuit for inductive load Figure 17: Unclamped inductive load test
switching and diode recovery times circuit

Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform

8/12 DocID029418 Rev 4

STFH10N60M2 Package information

4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: [Link].
ECOPACK® is an ST trademark.

4.1 TO-220FP wide creepage package information

Figure 20: TO-220FP wide creepage package outline

DM00260252_1

DocID029418 Rev 4 9/12

Package information STFH10N60M2
Table 9: TO-220FP wide creepage package mechanical data
mm
Dim.
Min. Typ. Max.
A 4.60 4.70 4.80
B 2.50 2.60 2.70
D 2.49 2.59 2.69
E 0.46 0.59
F 0.76 0.89
F1 0.96 1.25
F2 1.11 1.40
G 8.40 8.50 8.60
G1 4.15 4.25 4.35
H 10.90 11.00 11.10
L2 15.25 15.40 15.55
L3 28.70 29.00 29.30
L4 10.00 10.20 10.40
L5 2.55 2.70 2.85
L6 16.00 16.10 16.20
L7 9.05 9.15 9.25
Dia 3.00 3.10 3.20

10/12 DocID029418 Rev 4

STFH10N60M2 Revision history

5 Revision history
Table 10: Document revision history
Date Revision Changes
07-Jun-2016 1 First release.
Document status promoted from preliminary data to production
16-Jun-2016 2 data.
Minor text changes.
Modified: title and RDS(on) in cover page
18-Aug-2016 3 Modified: Table 5: "On /off states" and Table 7: "Switching times"
Minor text changes
Modified features on cover page.
Modified Table 2: "Absolute maximum ratings" and Table 4:
08-May-2017 4
"Avalanche characteristics".
Minor text changes.

DocID029418 Rev 4 11/12

 STFH10N60M2

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12/12 DocID029418 Rev 4