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Embedded Systems

Jörg Henkel
Nikil Dutt Editors

Dependable
Embedded Systems
Embedded Systems

Series Editors
Nikil Dutt, Irvine, CA, USA
Grant Martin, Santa Clara, CA, USA
Peter Marwedel, Informatik 12, TU Dortmund, Dortmund, Germany
This Series addresses current and future challenges pertaining to embedded hard-
ware, software, specifications and techniques. Titles in the Series cover a focused
set of embedded topics relating to traditional computing devices as well as high-
tech appliances used in newer, personal devices, and related topics. The material
will vary by topic but in general most volumes will include fundamental material
(when appropriate), methods, designs and techniques.

More information about this series at http://www.springer.com/series/8563


Jörg Henkel • Nikil Dutt
Editors

Dependable Embedded
Systems
Editors
Jörg Henkel Nikil Dutt
Karlsruhe Institute of Technology Computer Science
Karlsruhe, Baden-Württemberg, University of California, Irvine
Germany Irvine, CA, USA

ISSN 2193-0155 ISSN 2193-0163 (electronic)


Embedded Systems
ISBN 978-3-030-52016-8 ISBN 978-3-030-52017-5 (eBook)
https://doi.org/10.1007/978-3-030-52017-5

© The Editor(s) (if applicable) and The Author(s) 2021. This book is an open access publication.
Open Access This book is licensed under the terms of the Creative Commons Attribution 4.0
International License (http://creativecommons.org/licenses/by/4.0/), which permits use, sharing,
adaptation, distribution and reproduction in any medium or format, as long as you give appropriate
credit to the original author(s) and the source, provide a link to the Creative Commons license and
indicate if changes were made.
The images or other third party material in this book are included in the book’s Creative Commons
license, unless indicated otherwise in a credit line to the material. If material is not included in the book’s
Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the
permitted use, you will need to obtain permission directly from the copyright holder.
The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication
does not imply, even in the absence of a specific statement, that such names are exempt from the relevant
protective laws and regulations and therefore free for general use.
The publisher, the authors, and the editors are safe to assume that the advice and information in this book
are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or
the editors give a warranty, expressed or implied, with respect to the material contained herein or for any
errors or omissions that may have been made. The publisher remains neutral with regard to jurisdictional
claims in published maps and institutional affiliations.

This Springer imprint is published by the registered company Springer Nature Switzerland AG
The registered company address is: Gewerbestrasse 11, 6330 Cham, Switzerland
To Wolfgang,
our inspiring colleague, co-initiator of the
SPP 1500 program and a good friend.
We will truly miss him.
Prof. Dr. rer. nat. Wolfgang Rosenstiel
5.10.1954–19.08.2020
Preface

Dependability has become a major issue since Moore’s law had hit its limits.
While Moore’s law has been the pacemaker for the microelectronics age for about
four decades, the exponential growth has led to the microelectronic revolution
that has changed our lives in multifarious ways starting from the PC through the
internet and embedded applications like safety in automotive to today’s personal
communication/entertainment devices. The positive side effects of this exponential
growth were:
(a) Decreased Costs: This refers to the costs per transistor that decreased expo-
nentially as complexity (i.e., number of transistors per chip) increased. In other
words, for the same costs, the customer received far more functionality when
migrating from one technology node to the next one.
(b) Increased Performance: Since transistors shrank, the effective capacitances
shrank, too. Hence, signal delays decreased and allowed for higher clocking,
i.e., the clock frequency could be raised and significant performance gains could
be achieved.
(c) Decreased Power Consumption: Since smaller transistors have lower effective
switching capacitances, the power consumption per transistor and the overall
power consumption per chip went significantly down. This opened the opportu-
nity for new application areas like mobile devices, etc.
In summary, Moore’s law had provided a win–win situation for four decades in
virtually all relevant design constraints (i.e., cost, power consumption, performance,
and chip area). However, as Gordon E. Moore had already stated in a talk at ISSCC
2003: “No exponential is forever . . . but we can delay ‘forever’. . .,” he indicated
that the exponential growth cannot be sustained forever but that it may be possible
to delay the point when scalability finally comes to an end.
However, systems in the nano-CMOS era are inherently undependable when
further advancing from one technology node to the next.
In particular, we can identify the following challenging problems which neg-
atively impact the dependability of future systems. If not addressed properly, the
dependability of systems will significantly decrease.

vii
viii Preface

The effects can be divided into two major groups: The first group comprises those
effects that stem from fabrication/design time issues, whereas the second group
stems from operation/run-time execution.

Fabrication and Design-Time Effects

Yield and Process Variations

Yield defines the number of flaw-free circuits in relation to all fabricated circuits. A
high yield is so far considered vital for an economic production line. Unfortunately,
the yield will dramatically decrease because feature sizes reach a point where the
process of manufacturing underlies statistical variances. Future switching devices
may be fabricated through “growing” or “self-assembly.” All known research
suggest that these processes cannot be controlled entirely, leading to fabrication
flaws, i.e., circuits with faulty devices. As per the definition of yield, it will
at a not-that-distant point in time go to zero, i.e., no circuit can be produced
without at least a single faulty switching device. The traditional way of sorting
out faulty circuits will not work any longer! Rather, faults will be inherent. On
the other hand, fabricated circuits (although functionally correct) will continue to
exhibit increasing levels of “process variability”: i.e., a high degree of variability
in the observed performance, power consumption, and reliability parameters both
across manufactured parts and across use of these parts over time in the field.
The traditional “guardbanding” approach of overdesigning circuits with a generous
margin to hide these process variations will no longer be economically viable
nor will fit into a traditional design flow that assumes a rigid specification of
operational constraints for the performance, power, and reliability of manufactured
circuits. Newer design techniques and metholodologies will therefore need to
address explicitly the effects of process variation, rather than assuming these are
hidden through traditional overdesigned guardbanding margins.

Complexity

In about 10 years from now, the complexity of systems integrated into one single die
will amount to basic switching devices. The steadily increasing integration complex-
ity is efficiently exploited by the current trend towards many-core network-on-chip
architectures. These architectures introduce hardware and software complexities,
which previously were found on entire printed circuit boards and systems down
to a single chip and provide significant performance and power advantages in
comparison with single cores. A large number of processing and communication
Preface ix

elements require new programming and synchronization models. It leads to a


paradigm shift away from the assumption of zero design errors.

Operation and Run-Time Effects

Aging Effects

Transistors in the nano-CMOS era are far more susceptible to environmental


changes like heat, as an example. It causes an irreversible altering of the phys-
ical (and probably chemical) properties which, itself, lead to malfunctions and
performance variability over time. Though effects like electromigration in current
CMOS circuits are well known, they typically do not pose a problem since the
individual switching device’s lifetime is far higher than the product life cycle. In
future technologies, however, individual switching devices will fail (i.e., age) earlier
than the life cycle of the system (i.e., product) they are part of. Another emergent
altering effect is the increasing susceptibility to performance variability resulting in
changing critical paths over time. This, for instance, prevents a static determination
of the chip performance during manufacturing tests.

Thermal Effects

Thermal effects will have an increasing impact on the correct functionality. Various
degradation effects are accelerated by thermal stress like very high temperature
and thermal cycling. Aggressive power management can produce opposite effects,
e.g., hot spot prevention at the cost of increased thermal cycling. Higher integration
forces to extend through the third dimension (3D circuits) which in turn increases
the thermal problem since the ratio of surface-area/energy significantly worsens.
Devices will be exposed to higher temperatures and increase, among others, aging
effects. In addition, transient faults increase.

Soft Errors

The susceptibility of switching devices in the nano age against soft errors will
increase about 8% per logic state bit for each technology generation, as recently
forecasted. Soft errors are caused by energetic radiation particles (neutrons) hitting
silicon chips and creating a charge on the nodes that flips a memory cell or logic
latches.
x Preface

The idea of this book has its origin in several international programs on
dependability/reliability:
– The SPP 1500 Dependable Embedded Systems program (by DFG of Germany);
– The NSF Expedition on Variability (by NSF of USA); and
– The Japanese JST program.
While this book is not a complete representation of all of these programs, it does
represent all aspects of the SPP 1500 and some aspects of the NSF Expedition on
Variability and the Japanese JST program.
The book focuses on cross-layer approaches, i.e., approaches to mitigate depend-
ability issues by means and methods that work across design abstraction layers.
It is structured in the main six areas “Cross-Layer from Operating System to
Application,” “Cross-Layer Dependability: From Architecture to Software and
Operating System,” “Cross-Layer Resilience: Bridging the Gap between Circuit and
Architectural Layer,” “Cross-Layer from Physics to Gate- and Circuit-Levels,” and
“Cross-Layer from Architecture to Application.” Besides, it contains a chapter in
the so-called RAP model: the resilience articulation point (RAP) model aims to
provision a probabilistic fault abstraction and error propagation concept for various
forms of variability-related faults in deep submicron CMOS technologies at the
semiconductor material or device levels. RAP assumes that each of such physical
faults will eventually manifest as a single- or multi-bit binary signal inversion or
out-of-specification delay in a signal transition between bit values.
The book concludes with a perspective.
We want to thank all the authors who contributed to this book as well as all the
funding agencies that made this book possible (DFG, NSP, and JST).
We hope you enjoy reading this book and we would be glad to receive feedback.

Karlsruhe, Baden-Württemberg, Germany Jörg Henkel

Irvine, CA, USA Nikil Dutt


Contents

RAP Model—Enabling Cross-Layer Analysis and Optimization for


System-on-Chip Resilience . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Andreas Herkersdorf, Michael Engel, Michael Glaß, Jörg Henkel,
Veit B. Kleeberger, Johannes M. Kühn, Peter Marwedel,
Daniel Mueller-Gritschneder, Sani R. Nassif, Semeen Rehman,
Wolfgang Rosenstiel, Ulf Schlichtmann, Muhammad Shafique,
Jürgen Teich, Norbert Wehn, and Christian Weis

Part I Cross-Layer from Operating System to Application


Soft Error Handling for Embedded Systems using Compiler-OS
Interaction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Michael Engel and Peter Marwedel
ASTEROID and the Replica-Aware Co-scheduling
for Mixed-Criticality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Eberle A. Rambo and Rolf Ernst
Dependability Aspects in Configurable Embedded Operating
Systems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Horst Schirmeier, Christoph Borchert, Martin Hoffmann,
Christian Dietrich, Arthur Martens, Rüdiger Kapitza,
Daniel Lohmann, and Olaf Spinczyk

Part II Cross-Layer Dependability: From Architecture to


Software and Operating System
Increasing Reliability Using Adaptive Cross-Layer Techniques in
DRPs: Just-Safe-Enough Responses to Reliability Threats . . . . . . . . . . . . . . . . . 121
Johannes Maximilian Kühn, Oliver Bringmann, and Wolfgang Rosenstiel

xi
xii Contents

Dependable Software Generation and Execution on Embedded


Systems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Florian Kriebel, Kuan-Hsun Chen, Semeen Rehman, Jörg Henkel,
Jian-Jia Chen, and Muhammad Shafique
Fault-Tolerant Computing with Heterogeneous Hardening Modes . . . . . . . . 161
Florian Kriebel, Faiq Khalid, Bharath Srinivas Prabakaran,
Semeen Rehman, and Muhammad Shafique
Thermal Management and Communication Virtualization for
Reliability Optimization in MPSoCs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
Victor M. van Santen, Hussam Amrouch, Thomas Wild, Jörg Henkel,
and Andreas Herkersdorf
Lightweight Software-Defined Error Correction for Memories . . . . . . . . . . . . 207
Irina Alam, Lara Dolecek, and Puneet Gupta
Resource Management for Improving Overall Reliability of
Multi-Processor Systems-on-Chip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 233
Yue Ma, Junlong Zhou, Thidapat Chantem, Robert P. Dick,
and X. Sharon Hu

Part III Cross-Layer Resilience: Bridging the Gap Between


Circuit and Architectural Layer
Cross-Layer Resilience Against Soft Errors: Key Insights . . . . . . . . . . . . . . . . . . 249
Daniel Mueller-Gritschneder, Eric Cheng, Uzair Sharif, Veit Kleeberger,
Pradip Bose, Subhasish Mitra, and Ulf Schlichtmann
Online Test Strategies and Optimizations for Reliable
Reconfigurable Architectures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 277
Lars Bauer, Hongyan Zhang, Michael A. Kochte, Eric Schneider,
Hans-Joachim Wunderlich, and Jörg Henkel
Reliability Analysis and Mitigation of Near-Threshold Voltage
(NTC) Caches . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 303
Anteneh Gebregiorgis, Rajendra Bishnoi, and Mehdi B. Tahoori

Part IV Cross-Layer from Physics to Gate- and Circuit- Levels


Selective Flip-Flop Optimization for Circuit Reliability . . . . . . . . . . . . . . . . . . . . . 337
Mohammad Saber Golanbari, Mojtaba Ebrahimi, Saman Kiamehr,
and Mehdi B. Tahoori
EM Lifetime Constrained Optimization for Multi-Segment Power
Grid Networks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 365
Han Zhou, Zeyu Sun, Sheriff Sadiqbatcha, and Sheldon X.-D. Tan
Monitor Circuits for Cross-Layer Resiliency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 385
Mahfuzul Islam and Hidetoshi Onodera
Contents xiii

Dealing with Aging and Yield in Scaled Technologies . . . . . . . . . . . . . . . . . . . . . . . 409


Wei Ye, Mohamed Baker Alawieh, Che-Lun Hsu, Yibo Lin,
and David Z. Pan

Part V Cross-Layer from Architecture to Application


Design of Efficient, Dependable SoCs Based on a
Cross-Layer-Reliability Approach with Emphasis on Wireless
Communication as Application and DRAM Memories . . . . . . . . . . . . . . . . . . . . . . 435
Christian Weis, Christina Gimmler-Dumont, Matthias Jung,
and Norbert Wehn
Uncertainty-Aware Compositional System-Level Reliability Analysis . . . . . 457
Hananeh Aliee, Michael Glaß, Faramarz Khosravi, and Jürgen Teich
Robust Computing for Machine Learning-Based Systems . . . . . . . . . . . . . . . . . . 479
Muhammad Abdullah Hanif, Faiq Khalid, Rachmad Vidya Wicaksana
Putra, Mohammad Taghi Teimoori, Florian Kriebel, Jeff (Jun) Zhang,
Kang Liu, Semeen Rehman, Theocharis Theocharides, Alessandro Artusi,
Siddharth Garg, and Muhammad Shafique
Exploiting Memory Resilience for Emerging Technologies: An
Energy-Aware Resilience Exemplar for STT-RAM Memories . . . . . . . . . . . . . . 505
Amir Mahdi Hosseini Monazzah, Amir M. Rahmani, Antonio Miele,
and Nikil Dutt
Hardware/Software Codesign for Energy Efficiency and
Robustness: From Error-Tolerant Computing to Approximate
Computing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 527
Abbas Rahimi and Rajesh K. Gupta
Reliable CPS Design for Unreliable Hardware Platforms . . . . . . . . . . . . . . . . . . . 545
Wanli Chang, Swaminathan Narayanaswamy, Alma Pröbstl,
and Samarjit Chakraborty
Power-Aware Fault-Tolerance for Embedded Systems . . . . . . . . . . . . . . . . . . . . . . 565
Mohammad Salehi, Florian Kriebel, Semeen Rehman,
and Muhammad Shafique
Our Perspectives . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 589
Jian-Jia Chen and Joerg Henkel

Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593
RAP Model—Enabling Cross-Layer
Analysis and Optimization for
System-on-Chip Resilience

Andreas Herkersdorf, Michael Engel, Michael Glaß, Jörg Henkel,


Veit B. Kleeberger, Johannes M. Kühn, Peter Marwedel,
Daniel Mueller-Gritschneder, Sani R. Nassif, Semeen Rehman,
Wolfgang Rosenstiel, Ulf Schlichtmann, Muhammad Shafique, Jürgen Teich,
Norbert Wehn, and Christian Weis

A. Herkersdorf () · D. Mueller-Gritschneder · U. Schlichtmann


Technical University of Munich, Munich, DE, Germany
e-mail: herkersdorf@tum.de
M. Engel
Department of Computer Science, Norwegian University of Science and Technology (NTNU),
Trondheim, Norway
e-mail: michael.engel@ntnu.no
M. Glaß
University of Ulm, Ulm, DE, Germany
J. Henkel
Karlsruhe Institute of Technology (KIT), Karlsruhe, DE, Germany
V. B. Kleeberger
Infineon Technologies AG, Munich, DE, Germany
J. M. Kühn
Preferred Networks, Inc., Tokyo, JP, Japan
P. Marwedel
Technical University of Dortmund, Dortmund, DE, Germany
S.R. Nassif
Radyalis LLC, Austin, US, United States
S. Rehman · M. Shafique
TU Wien, Vienna, AT, Austria
W. Rosenstiel
University of Tübingen, Tübingen, DE, Germany
J. Teich
Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Erlangen, DE, Germany
N. Wehn · C. Weis
University of Kaiserslautern (TUK), Kaiserslautern, DE, Germany

© The Author(s) 2021 1


J. Henkel, N. Dutt (eds.), Dependable Embedded Systems, Embedded Systems,
https://doi.org/10.1007/978-3-030-52017-5_1
2 A. Herkersdorf et al.

1 Introduction/Motivation

Conquering System-on-Chip (SoC) architecture and design complexity became


a major, if not the number one, challenge in integrated systems development.
SoC complexity can be expressed in various ways and different dimensions:
Today’s single-digit nanometer feature size CMOS technologies allow for multi-
billion transistor designs with millions of lines of code being executed on dozens
of heterogeneous processing cores. Proving the functional correctness of such
designs according to the SoC specifications is practically infeasible and can only
be achieved probabilistically within tolerable margins. Further consequences of
this ever-increasing hardware/software complexity are: Increasing susceptibility of
application- and system-level software codes to security and safety exposures, as
well as operational variability of nanometer size semiconductor devices because
of environmental or manufacturing variations. The SPP1500 Dependable Embed-
ded Systems Priority Program of the German Research Foundation (DFG) [8]
focused on tackling the latter class of exposures. NBTI (negative-bias temperature
instability) aging, physical electromigration damage and intermittent, radiation
induced bit flips in registers (SEUs (single event upsets)) or memory cells are some
manifestations of CMOS variability. The Variability Expedition program by the
United States National Science Foundation (NSF) [6] is a partner program driven by
the same motivation. There has been and still is a good amount of bi- and multilateral
technical exchange and collaboration between the two national-level initiatives.
Divide and conquer strategies, for example, by hierarchically layering a system
according to established abstraction levels, proved to be an effective approach
for coping with overall system complexity in a level by level manner. Layering
SoCs bottom-up with semiconductor materials and transistor devices, followed by
combinatorial logic, register-transfer, micro-/macro-architecture levels, and runtime
environment middleware, as well as application-level software at the top end of the
hierarchy, is an established methodology used both in industry and academia. The
seven layer Open Systems Interconnection (OSI) model of the International Orga-
nization for Standardization provides a reference framework for communication
network protocols with defined interfaces between the layers. It is another example
of conquering the complexity of the entire communication stack by layering.
Despite these merits and advantages attributed to system layering, a disadvantage
of this approach cannot be overlooked. Layering fosters specialization by focusing
the expertise of a researcher or developer to one specific abstraction level only (or to
one layer plus certain awareness for the neighboring layers at best). Specialization
and even sub-specialization within one abstraction layer became a necessity as the
complexity within one layer raises already huge design challenges. However, the
consequence of layering and specialization for overall system optimization is that
such optimizations are typically constrained by the individual layer boundaries.
Cross-layer optimization strives to pursue a more vertical approach, taking the
perspectives of two or more, adjacent or non-adjacent, abstraction levels for certain
system properties or qualities into account. A holistic approach (considering all
abstraction levels for all system properties) is not realistic because of the overall sys-
RAP Model—Enabling Cross-Layer Analysis and Optimization for System-on-. . . 3

te
n

ur
io

ga

ics
S

ct
at

/O

it/

ys
ite
lic

cu
SW

ph
p

ch
ap

cir
ar
application

SW/OS

architecture

circuit/gate

physics

Fig. 1 RAP covers probabilistic error modeling and propagation of physics induced variabilities
from circuit/logic up to application level

tem complexity. Nevertheless, for some properties, cross-layer approaches proved


to be effective. Approximate computing, exploiting application-level tolerance
to on-purpose circuit level inaccuracies in arithmetic operations for savings in
silicon area and a lower power dissipation, is a widely adopted example of cross-
layer optimization. Cross-layer approaches have also been suggested as a feasible
technique to enhance reliability of complex systems [21, 26].
A prerequisite for effective cross-layer optimization is the ability to correlate the
causes or events happening at one particular level with the effects or symptoms they
will cause at other abstraction levels. Hierarchical system layering and specializa-
tion implies that subject matters and corresponding terminology are quite different
between levels, especially when the levels of interest are several layers apart. The
objective of the presented Resilience Articulation Point (RAP) model is to provision
probabilistic fault abstraction and error propagation concepts for various forms
of variability induced phenomena [9, 28]. Or, expressed differently, RAP aims to
help annotate how variability related physical faults occurring at the semiconductor
material and device levels (e.g., charge separation in the silicon substrate in response
to a particle impact) can be expressed at higher abstraction levels. Thus, the impact
of the low-level physical faults onto higher level fault tolerance, such as instruction
vulnerability analysis of CPU core microarchitectures, or fault-aware real-time
operating system middleware, can be determined without the higher level experts
needing to be aware of the fault representation and error transformation at the
lower levels. This cross-layer scope and property differentiates RAP from traditional
digital logic fault models, such as stuck-at [18] or the conditional line flip (CLF)
model [35]. These models, originally introduced for logic testing purposes, focus
on the explicit fault stimulation, error propagation and observation within one and
the same abstraction level. Consequently, RAP can be considered as an enabler
for obtaining a cross-layer perspective in system optimization. RAP covers all SoC
hardware/software abstraction levels as depicted in Fig. 1.
4 A. Herkersdorf et al.

2 Resilience Articulation Point (RAP) Basics

In graph theory, an articulation point is a vertex that connects sub-graphs within a


bi-connected graph, and whose removal would result in an increase of the number
of connecting arcs within the graph. Translated into our domain of dependability
challenges in SoCs, spatially and temporally correlated bit flips represent the single
connecting vertex between lower layer fault origins and the upper layer error and
failure models of hardware/software system abstraction (see Fig. 2).
The RAP model is based on three foundational assumptions: First, the hypothesis
that every variability induced fault at the semiconductor material or device level
will manifest with a certain probability as a permanent or transient single- or multi-
bit signal inversion or out-of-specification delay in a signal transition. In short, we
refer to such signal level misbehavior in terms of logic level or timing as a bit flip
error, and model it by a probabilistic, location and time dependent error function
Pbit (x, t). Second, probabilistic error functions PL (x, t), which are specific to a
certain abstraction layer and describe how layer characteristic data entities and
compositional elements are affected by the low-level faults. For example, with what
probability will a certain control interface signal on an on-chip CPU system bus, or a
data word/register variable used by an application task be corrupted in response to a
certain NBTI transistor aging rate. Third, there has to be a library of transformation
functions TL converting probabilistic error functions PL (x1 , t) at abstraction level
L into probabilistic error functions PL+i (x2 , t + t) at level(s) L + i (i ≥ 1) (see
Fig. 3).

PL+1 (x2 , t + t) = TL o PL (x1 , t) (1)

Please note, although the existence of such transformation functions is a founda-


tional assumption of the RAP model itself, the individual transformation functions

Failure CPU stall


„No effect“
Data corruption

Wrong branch
Invalid CPU reg decision
Error

Bit Flip

Faults Jitter Electromigration


Crosstalk
Supply noise

Physical Temperature Coupling (C)


causes Particle strike Manufacturing variation

Fig. 2 Fault, error, and failure representations per abstraction levels


RAP Model—Enabling Cross-Layer Analysis and Optimization for System-on-. . . 5

PL i ( x2 , t + t )

Workload
higher level

Level L Structure,
Environment TL ( E L , DL , S L ) Design

Paerns
lower level Design
PL ( x1 , t )

Fig. 3 Error transformation function depending on environmental, design, and system state
conditions

TL cannot come from or be a part of RAP. Transformation functions are dependent


on a plurality of environmental, design and structure specific conditions, as well as
implementation choices (EL , DL , SL ) within the specific abstraction layers that are
only known to the respective expert designer. Note further, the location or entity
x2 affected at a higher abstraction level may not be identical to the location x1 ,
where the error manifested at the lower level. Depending on the type of error, the
architecture of the system in use, and the characteristic of the application running,
the error detection latency t during the root cause analysis for determining the
error source at level L typically represents a challenging debugging problem [17].

3 Related Work

Related approaches to describe the reliability of integrated circuits and systems have
been developed recently.
In safety-critical domains and to ensure reliable systems, standards prescribing
reliability analysis approaches and MTTF (mean time to failure) calculations have
been in existence for many decades (e.g., RTCA/DO-254—Design Assurance
Guidance for Airborne Electronic Hardware, or the Bellcore/Telcordia Predictive
Method, SR-332—Reliability Prediction Procedure for Electronic Equipment, in the
telecom area [33]). These approaches, however, were not developed with automation
in mind, and do not scale well to very complex systems.
The concept of reliability block diagrams (RBDs) has also been used to describe
the reliability of systems [19]. In RBDs, each block models a component of the
considered system. A failure rate is associated to each block. The RBD’s structure
describes how components interact. Components in parallel are redundant, whereas
for serially connected components the failure of any one component causes the
entire system to fail. However, more complex situations are difficult to model
6 A. Herkersdorf et al.

and analyze. Such more complex situations include parametric dependencies (e.g.,
reliability dependent on temperature and/or voltage), redundancy schemes which
can deal with certain failures, but not other (e.g., ECC which, depending on the
code and number of redundant bits, can either deal with the detection and correction
of single-bit failure, or detect, but not correct, multi-bit failures), or state-dependent
reliability characteristics.
In 2012, RIIF (Reliability Information Interchange Format) was presented [4].
RIIF does not introduce fundamentally new reliability modeling and analysis
concepts. Rather, the purpose is to provide a format for describing detailed reliability
information of electronic components as well as the interaction among components.
Parametric reliability information is supported. State-dependent reliability (modeled
by Markov reliability models) is planned to be added. By providing a standardized
format, RIIF intends to support the development of automated approaches for
reliability analysis. It targets to support real-world scenarios in which complex
electronic systems are constructed from legacy components, purchased IP blocks,
and newly developed logic.
RIIF was developed in the context of European projects, driven primarily by the
company IROC Technologies. The original concept was developed mostly within
the MoRV (Modeling Reliability under Variation) project. Extensions from RIIF
to RIIF2 were recently developed in collaboration with the CLERECO (Cross-
Layer Early Reliability Evaluation for the Computing Continuum) project. RIIF is a
machine-readable format which allows the detailed description of reliability aspect
of system components. The failure modes of each component can be described,
depending on parameters of the component. The interconnection of components to a
system can be described. RIIF originally focused only on hardware. RIIF2 has been
proposed to extend the basic concepts of RIIF to also take software considerations
into account [27].

4 Fault Abstraction at Lower Levels

The RAP model proposes modeling the location and time dependent error prob-
ability Pbit (x, t) of a digital signal by an error function F with three, likewise,
location and/or time dependent parameters: Environmental and operating conditions
E, design parameters D, and (error) state bits S.

Pbit (x, t) = F(E, D, S) (2)

This generic model has to be adapted to every circuit component and fault
type independently. Environmental conditions E, such as temperature and supply
voltage fluctuations, heavily affect the functionality of a circuit. Device aging
further influences the electrical properties, concretely the threshold voltage. Other
environmental parameters include clock frequency instability and neutron flux
density.
RAP Model—Enabling Cross-Layer Analysis and Optimization for System-on-. . . 7

System design D implies multiple forms of decisions making. For example, shall
arithmetic adders follow a ripple-carry or carry-look-ahead architecture (enumer-
ative decision)? What technology node to choose (discrete decision)? How much
area should one SRAM cell occupy (continuous decision)? Fixing such design
parameters D allows the designer to make trade-offs between different decisions,
which all influence the error probability of the design in one way or the other.
In order to model the dependence of the error probability on location, circuit
state, and time, it is necessary to include several state variables. These state variables
S lead to a model which is built from conditional probabilities P(b1 |b2 ), where the
error probability of the bit b1 is dependent on the state of the bit b2 . For example,
the failure probability of one SRAM cell depends on the error state of neighboring
SRAM cells due to the probability of multi-bit upset (MBU) [8]. For an 8T SRAM
cell it also depends on the stored value of the SRAM cell as the bit flip probability
of a stored “1” is different from a stored “0.”
Finally, the error function F takes the three parameter sets E, D, and S and
returns the corresponding bit error probability Pbit . The error function F is unique
for a specific type of fault and for a specific circuit element. An error function can
either be expressed by a simple analytical formula, or may require a non-closed
form representation, e.g., a timing analysis engine or a circuit simulator.
In the sequel, we show by the example of SRAM memory technology, how the
design of an SRAM cell (circuit structure, supply voltage, and technology node) as
well as different perturbation sources, such as radiating particle strikes, noise and
supply voltage drops, will affect the data bit error probability Pbit of stored data bits.

4.1 SRAM Errors

The SRAM is well known to have high failure rates already in current technologies.
We have chosen two common SRAM architectures, namely the 6-transistor (6T) and
8-transistor (8T) bit cell shown in Fig. 4. For the 6T architecture we have as design
choices the number of fins for the pull-up transistors (PU), the number of fins for the

Fig. 4 Circuit schematics for standard 6T (a) and 8T (b) SRAM bit cells
8 A. Herkersdorf et al.

pull-down transistors (PD), and the number of fins for the access transistors (PG).
The resulting architecture choice is then depicted by 6T_(PU:PG:PD). For the 8T
architecture we have additionally two transistors for the read access (PGR). Hence,
the corresponding architecture choice is named 8T_(PU:(PG:PGR):PD).
An SRAM cell can fail in many different ways, for example:
• Soft Error/Single Event Upset (SEU) failure: If the critical charge Qcrit is low,
the susceptibility to a bit flip caused by radiation is higher.
• Static Voltage Noise Margin (SVNM) failure: An SRAM cell can be flipped
unintentionally when the voltage noise margin is too low (stability).
• Read delay failure: An SRAM cell cannot be read within a specified time.
• Write Trip Voltage (WTV) failure: The voltage swing during a write is not high
enough at the SRAM cell.
We selected these four parameters, namely Qcrit , SVNM, Read delay, and WTV
as resilience key parameters. To quantify the influence of technology scaling (down
to 7 nm) on the resilience of the two SRAM architectures we used extensive Monte-
Carlo simulations and predictive technology models (PTM) [12].

4.1.1 SRAM Errors due to Particle Strikes (Qcrit )

Bit value changes in high density SRAMs can be induced by energetic particle
strikes, e.g., alpha or neutron particles [34]. The sensitivity of digital ICs to such
particles is rapidly increasing with aggressive technology scaling [12], due to the
correspondingly decreasing parasitic capacitances and operating voltage.
When entering the single-digit fC region for the critical charge, as in current
logic and SRAM devices and illustrated in Fig. 5a, lighter particles such as alpha
and proton particles become dominant (see Fig. 5b). This increases not only error
rates, but also their spread, as the range of lighter particles is much longer compared
to residual nucleus [10].

6 45 nm
32 nm 6
SEU Cross Section
Critical Charge [fC]

[10− 14 cm2/ bit]

22 nm Proton dominant
16 nm
α particle dominant
4 4 Heavy ion dominant

2
2
0
1 10 100
0.5 0.6 0.7 0.8 0.9 1 Critical Charge [fC]
Supply Voltage [V]
(b)
(a)

Fig. 5 Technology influence on SRAM bit flips: (a) Critical charge dependency on technology
node and supply voltage for 6T SRAM cell, (b) Particle dominance based on critical charge
(adapted from [10])
RAP Model—Enabling Cross-Layer Analysis and Optimization for System-on-. . . 9

These technology-level faults caused by particle strikes now need to be abstracted


into a bit-level fault model, so that they can be used in later system-level resilience
studies. In the following this is shown for the example of neutron particle strikes.
Given a particle flux of , the number of neutron strikes k that hit a semiconductor
area A in a time interval τ can be modeled by a Poisson distribution:

( · A · τ )k
P (N(τ ) = k) = exp(− · A · τ ) (3)
k!
These neutrons are uniformly distributed over the considered area, and may only
cause an error if they hit the critical area of one of the memory cells injecting
a charge which is larger than the critical charge of the memory cell. The charge
Qinjected transported by the injected current pulse from the neutron strike follows
an exponential distribution with a technology dependent parameter Qs :
 
1 Qinjected
fQ (Qinjected ) = exp − (4)
Qs Qs

The probability that a cell flips due to this charge can then be derived as

∞
PSEU (Q ≥ Qcrit |Vcellout = VDD ) = fQ (Q)dQ (5)
Qcrit

With increasing integration density, the probability of multi-bit upsets (MBU)


also increases [16]. A comparison of the scaling trend of Qcrit between the 6T
and 8T SRAM bit cell is shown in Fig. 6. The right-hand scale in the plots shows
the 3 sigma deviation of Qcrit in percent to better highlight the scaling trend.
The 8T-cell has a slightly improved error resilience due to an increased Qcrit
(approximately 10% higher). However, this comes at the cost of a 25–30% area
increase.

6T 8T
800 35 800 35
3σ (% of Median Value)

3σ (% of Median Value)

700 30 700 30
600 25 600 25
Qcrit [aC]

Qcrit [aC]

500 500
20 20
400 400
15 15
300 300
200 10 200 10
100 5 100 5
0 0 0 0
20 16 14 10 7 20 16 14 10 7
Technology Node [nm] Technology Node [nm]

Fig. 6 Qcrit results for a 6T_(1:1:1) high density (left) and an 8T_(1:(1:1):1) (right) SRAM cell
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