Internal Assessment Test II
DEGREE:B.E YEAR & SEMESTER:II / III
BRANCH:BME REGULATION:2021
SUBJECT Code and NAME: BM3353- FUNDAMENTALS OF
ELECTRONIC DEVICES DATE & SESSION:
AND CIRCUITS
TIME: 2 Hrs 15 Minutes Max. Marks: 60
CO BL PO
1. Formulate V-I characteristic curve of MOSFET. CO3 BL6 PO6
2. Define zener diode. CO4 BL1 PO2
3. List out the applications of LASER diode and schottky diode. CO4 BL4 PO4
4. Sketch the V-I characteristics of UJT. CO5 BL3 PO3
5. Discuss the types of opto couplers. CO5 BL2 PO2
CO BL PO
Explain the construction, operation and characteristics of D-
a) CO3 BL2 PO2
MOSFET.
6.
Explain the construction, operation and characteristics of E-
b) CO3 BL2 PO2
MOSFET.
a) Develop the structure and operating principle of MESFET. CO4 BL3 PO3
7.
Discuss the working mechanism of a LASER diode with
b) CO4 BL3 PO3
necessary diagram.
Compare the structure of MESFET, FINFET, PINFET, CNTFET
a) CO4 BL3 PO3
8. and DUAL GATE MOSFET.
b) Explain in detail about Zener and Tunnel Diode. CO4 BL2 PO2
Draw the basic structure of UJT and explain its V-I characteristics
a) CO5 BL2 PO2
with the help of equivalent circuit.
9.
b) Analyze the spectral output curves and radiation pattern of LED. CO5 BL4 PO4
Describe the structure and operation of Power BJT and Power
a) CO5 BL2 PO2
MOSFET.
10.
b) Discuss the characteristics and working principle of SCR and list
CO5 BL2 PO2
out its applications.
CO Number Weightage (Marks) Weightage in %
CO.3 22 20
CO.4 44 40
CO.5 44 40
Faculty In-Charge HoD Principal