STB 47203
POWER ELECTRONICS & MOTOR
DRIVE
Nuraida Binti Md.Hassan
Dept. Electrical Electronics Automation
(EEA)
Malaysian Spanish Institute (MSI)
Universiti Kuala Lumpur
Phone num : 04 4035180
COURSE SYLLABUS
CHAPTER 1: Overview of Power semiconductor
switches
CHAPTER 2: Line-commutated diodes rectifiers
CHAPTER 3: DC-DC switch-mode converters
CHAPTER 4: Switch mode DC-AC inverters
CHAPTER 5: Resonant converters
CHAPTER 6: Power supply applications
CHAPTER 7: Controllers with Op-amp
CHAPTER 8: AC drive
CHAPTER 9: DC drive
CHAPTER 1
Overview of Power
semiconductor switches
INTRODUCTION
Power semiconductor devices are semiconductor devices used as
switches or rectifiers in power electronic circuits (exp; switch mode
power supplies)
Most power semiconductor devices are only used in commutation
mode (they are either ON or OFF)
PE switches works in 2 states:
1) Fully ON (Conducting) switch CLOSE
2) Fully OFF (Blocking) switch OPEN
Power semiconductor devices can be categorized into 3 groups
(degree of controllability):
1) Uncontrolled
2) Semi-controlled
3) Fully-controlled
Uncontrolled
ON and OFF states controlled by power circuit only
Exp : Diodes
Semi-controlled
Latch ON by low power control signal but must be turned OFF
by power circuit. Cannot be turned OFF by power signal
Exp: Thyristor
Fully controlled
Can be turn ON and OFF by low power control signal
Exp: Power transistor
DIODES
Made of silicon p-n junction with two terminals
Anode is positive (+) and Cathode is negative (-)
Allows current to flow in only one direction (from anode to cathode)
Ideal diode is like switch. When switch is closed, the switch turns ON.
When switch open, the switch turn OFF
Figure 1: (a) PN junction model, (b) schematic symbol, (c) physical part
Figure 2 : Photograph of diodes
When the anode is +ve with respect to cathode, the diode is forward
biased and the diode conducts
Figure 3 : Forward bias diode
When the cathode is +ve with respect to anode, the diode is reversed
biased and no conduction
Figure 4 : Reverse bias diode
I-V Characteristic
Practical diode
Figure 5: i-v characteristic (practical)
Forward-biased region
Forward voltage (VD > 0)
Diode begin to conducts current as the voltage across anode to
cathode is increased
When voltage approaches knee-voltage (Vo), a slight increase in
voltage causes the current increase rapidly.
Silicon diodes (Vo 0.7V). Germanium diodes (Vo 0.3V)
Reversed-biased region
Forward voltage (VD< 0)
Small amount of current (reverse leakage current) flows as the
voltage from anode to cathode is increased – diodes has a very high
resistance in the reverse direction.
Reverse voltage is increasing until the reverse breakdown voltage is
reached – diodes allow a large current flow for a small increase in
voltage result burn out diode.
Current-limiting resistor must be used in series to prevent destruction
of the diode.
Ideal diode
Figure 6: i-v characteristic (ideal)
PE deals with high voltage and current diode as an ideal element
When forward-biased, no voltage across it (VD = 0)
When reverse-biased, no current through it (ID = 0)
Figure 7: Forward and reversed-biased diode & switch
equivalent circuit
Types of power diodes
Depending on application requirement.
(1) Standard or general purpose diodes
- Used in low speed application. Used as diode rectifier and
converters
(2) Fast-recovery diodes
- Have low frequency time. Used in dc-dc and dc-ac converter
circuits
(3) Schottky diodes
- Have lower forward voltage drop (typically 0.3V). Widely used as
clamping diodes and in RF applications
Applications
Power diodes are used mainly in :
1) Uncontrolled rectifier to convert AC to fixed DC
2) As an on/off switch that controls current
3) As a freewheeling diodes to provide path for the current flow in
inductive loads
4) To separate signal from radio frequencies
Advantages
High mechanical and thermal reliability
High peak inverse voltage
Low reverse current
Low forward voltage drop
High efficiency
Compactness
Chapter 2 13
Example 1
Diode in DC circuits
For the circuit shown in Figure below, find the diode current (ID), diode
voltage (VD) and voltage across resistor (VR)
+VD -
ID
VS=20V
R = 100
Solution
Since the current established by the source flows in the direction of the
diode’s arrow, the diode is on can be replaced by the closed switch.
Voltage across diode : VD = 0V
Voltage across resistor : VR = VS – VD = 20V – 0V = 20V
Current through diode : ID = VR / R = 20V/100 = 0.2A
Example 2
Diode in AC circuits
Find the switch equivalent circuit of a diode with an AC source voltage Vs
as sown in figure below
Solution
During the +ve half cycle, the anode is more +ve than its cathode and
therefore diode is forward-biased. We can replace the diode with a closed
switch
During the –ve half cycle, the anode is more –ve than its cathode and
therefore the diode is reverse-biased. We can replaced the diode with an
open switch
THYRISTOR
Word from Greek means “door” let something pass through
it
4 layer PNPN power semiconductor devices used as electronic
switches
A solid-state switching device that switches current ON by a
quick pulse of control current. Most common are;
(1) SCR
(2) TRIAC
(3) DIAC
(4) GTO
Figure 8 : Photograph of thyristors
Silicon Controlled Rectifier (SCR)
Most popular electrical power controllers due to its fast switching
action, small size, high current and high voltage ratings
Figure 9 : schematic symbol and block construction
Have three terminals;
(1) Anode
(2) Cathode
(3) Gate
Two terminal for load current and one terminal for control current
Is triggered into conduction in only one direction
Allows current to flow when a control voltage is applied to it's gate
I-V characteristic
Practical SCR
Figure 10: i-v characteristic (practical)
Forward-biased region
A small forward current call off-state current flows through device.
The region of the curve is known as forward blocking region.
If the forward bias increased until the anode voltage reaches a critical
limit called the forward breakover voltage, the SCR turns ON.
The voltage across the SCR then drops to a low value, on-state
voltage (1-3V) and the current increase sharply.
The value of forward breakover voltage can be controlled by the level
of gate current.
SCR remains ON as long as its anode current IA stays above a
certain value called the holding current (IH)
Reversed-biased region
When SCR is reverse-biased (anode is more –ve with respect to
cathode), there is small reverse leakage current (IR)
If the reverse voltage is increased until the voltage reaches the
reverse breakdown voltage, the reverse current will increase sharply.
If the current is not limited to the save value, the device can be
destroyed.
Care must be taken to make sure the max reverse voltage across the
SCR does not exceed its breakdown voltage
Ideal thyristor
Figure 10: i-v characteristic (ideal)
Has three basic operating states. The forward blocking (off) state, the
forward conduction (on) state and reverse blocking (off) state
The gate signal switches the SCR from the forward blocking state to
the forward conducting state
The ideal SCR behaves like a diode after is has been turned ON.
Application
Regulated power supplies
Static switches
Choppers
Inverters
Cycloconverters
Motor control
Advantages
No moving parts – noiseless
Very high switching speed ( 109/s )
Small size
Reliable
Longer life
Example 3
Find the maximum value of the load resistor that ensure SCR conduction
in the circuit shown below. The SCR has a holding current (IH) of 200mA
and Vs=208V.
Solution
In order for SCR to remain on, the anode current must be fall below
200mA. V 208
RL max s 1040
I H 200mA
Transistor
Used in circuits as either a switch or as an amplifier
Two main category of transistor:
1) Bipolar junction transistor (BJT)
-bipolar transistor
- operate with both types of charge carriers, Holes and Electrons
1) Field Effect transistor (FET)
- unipolar transistor
-depends only on the conduction of Electrons (N-channel) or Holes
(P-channel)
Figure 11: Transistor family
Bipolar Junction Transistor (BJTs)
Used as current control device. Base current (IB) controls the collector
current (IC).
Three element of BJT: Emitter (E) ,Base (B) and Collector (C)
BJT exist in two major classifications : NPN transistor and PNP
transistor
Figure 12: The schematic symbol and block construction
(a) (b)
Figure 13 : (a) Transistor leads for common case style
(b) Photograph of transistor
I-V characteristic
Practical BJTs
Figure 14: i-v characteristic (practical)
Three regions of operation :
(1) cutoff
(2) saturation
(3) active
Cut-off region (OFF)
IB = 0 the IC is negligibly small OFF state. Collector-base and base-
emitter junctions are reverse-biased
Transistor behaves as an open switch
Saturation region (ON)
IC is very high and VCE 0. Collector-base and base-emitter junction are
forward-biased
Transistor behaves like a closed switch
Active region
Base-emitter junction is forward-biased while the collector-base junction
is reverse-biased
Is used for amplification and is avoided in switching applications
The I-V characteristic does not show reverse region. Therefore BJTs
are not used to control AC power.
Ideal BJTs transistor
Figure 15: i-v characteristic (ideal)
Since transistor are used mainly as switch, the idealized
characteristic is important
When the transistor is OFF,IC = 0 no matter what the value of VCE
When the transistor is ON, VCE = 0 no matter the value of the IC
Transistor has excellent characteristic as an ideal switch
Applications
Analog circuit amplifiers and linear regulated power supply
Digital circuit function as switches including logic gates, random
access memory (RAM) and microprocessor.
Advantages
Switch signals at high speeds
Manufactured to handle large currents so that they can serve as high-
power amplifiers in audio equipment and in wireless transmitters
Field Effect Transistor (FETs)
Used as voltage control device
Three element of FET: Source(S), Gate(G) and Drain(D)
FET exist in two basic parts : N-Channel and P-Channel
FET exist in two major classifications: Junction FET (JFET) and
Metal-oxide-semiconductor FET (MOSFET)
Figure 15: The schematic symbol and block construction
There are a number of different kinds of field effect transistors that are
so named for how the channel is constructed and what insulator is
used
(a)
Figure 16 : (a) High power N-channel FET
(b) Photograph of FET
I-V characteristic
Practical FETs
Figure 17: i-v characteristic (practical)
Three regions of operation :
(1) cutoff
(2) saturation
(3) ohmic
(4) breakdown
Cut-off region (OFF)
The gate voltage is sufficient to cause the FET to act as an open circuit
as the channel resistance is at maximum
Saturation region (ON)
The FET becomes a good conductor and is controlled by the gate-
source voltage, (VGS) while the drain-source voltage, (VDS) has little or
no effect.
Ohmic region
The depletion layer of the channel is very small and the acts like a
variable resistor
Breakdown region
The voltage between the drain and source, (VDS) is high enough to causes the
FET's resistive channel to break down
Ideal FETs transistor
Figure 18: i-v characteristic (ideal)
If no signal applied to the gate, the device is OFF
ID = 0 and VDS = supply voltage
Voltage at the gate (VGS ) turn the device ON and the drain current is
limited by the load resistance
The voltage VDS across the transistor is zero
Application
Low noise amplifier
Widely used as a switching element for a computer and an electric power
control element
Advantages
More temperature stable
High input impedance, voltage controlled device, easy to drive
Fast switching speed compared to BJT
Low noise compared to BJT
Low power dissipation compared to BJT.
Chapter 2 37
Summary of power devices
POWER DEVICES
DIODES THYRISTOR TRANSISTORS
1.General purpose 1.SCRs 1.BJT
2. Fast recovery 2.GTO 2. MOSFET
3.Schottky 3.RCT 3.IGBT
4.SITH 4.SIT
5.GATT
6.LASCR
7.MCT
8.TRIAC
9. DIAC
Comparison of controllable switch
Table 1.1 : Relative properties of controllable switches
Summary of device capabilities
Figure 19
